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Silicone oil-based solar-thermal fluids dispersed with PDMS-modified Fe3O4@graphene hybrid nanoparticles

Progress in Natural science:Materials International 2018年第5期28卷 554-562页

作者： Peng Tao Lei Shu Jingyi Zhang Chiahsun Lee Qinxian Ye Huaixin Guo Tao Deng State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

One of the most challenging problems that limit the practical application of carbon-based photothermal nanofluids is their poor dispersion stability and tendency to form aggregation. Herein, by using Fe3O4@graphene hybrid nanoparticles as a model system, we proposed a new method to prepare stably dispersed silicone oilbased solar-thermal nanofluids that can operate at high temperatures than water-based fluids. The introduction of Fe3O4nanoparticles between graphene nanosheets not only physically increases the inter-plane distance of the graphene nanosheet but also provides numerous anchoring points for surface modification. Phosphate-terminated polydimethylsiloxane chains, which have high compatibility with the silicone oil base fluids and hightemperature stability, were synthesized and utilized to modify the Fe3O4nanoparticle surfaces. The attached chains create steric hindrance and effectively screen the strong inter-plane van der Waals attraction between graphene sheets. Dispersion stability of the nanofluids with different concentrations of surface-modified hybrid nanoparticles and heated under different temperatures was investigated. We have demonstrated that such fluids could maintain stable dispersion under a heating temperature up to 150 °C depending on the concentration of the hybrid nanoparticles. The resultant nanofluids maintained stable dispersion after repeated heating and were employed for consistent direct solar-thermal energy harvesting at 100 °C.

关键词： Silicone oil Graphene Nanofluid Dispersion Solar-thermal energy

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CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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Chinese Optics Letters 2019年第6期17卷 36-40页

作者： Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I *** modulator was fabricated on a 3 *** epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,*** results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.

关键词： optical Mach multiple plasma wave was dB

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Jiayun Dai Fei Wang Lida Xu Desheng Zhao Ping Han Tangshen Chen National Laboratory of Solid State Microstructure Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Nano Fabrication Facility Suzhou Institute of Nanotech and Nano-bionics Suzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 μm fine pitch gold and indium miro-bumps with 10 μm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 μm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 μm 2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration.

关键词： Bonding Gold Silicon Wafer bonding Indium Surface morphology Resistance

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An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

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Journal of Semiconductors 2018年第5期39卷 54-58页

作者： Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China

This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,*** order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably *** extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

关键词： CMOS technology amplifier integrated circuits

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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

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Chinese Physics B 2018年第4期27卷 432-436页

作者： Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen Research Institution China Electronic Equipment ＆ System Engineering Company Beijing 100039 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

We investigate the influence of fin architecture on linearity characteristics of AlGaN/*** is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar *** to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm ***,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar *** study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.

关键词： AlGaN/GaNFinFETs output power density linearity characteristics

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PbS Quantum Dot Image Sensors Derived from Spent Lead-Acid Batteries Via an Environmentally Friendly Route

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Engineering 2024年

作者： Yuxin Tong Dijie Zhang Zhaoyang Li Guang Hu Qingfang Zou Luna Xiao Weidong Wu Liang Huang Sha Liang Huabo Duan Jingping Hu Huijie Hou Jianbing Zhang Jiakuan Yang Hubei Key Laboratory of Multi-media Pollution Cooperative Control in Yangtze Basin School of Environmental Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 China Hubei Provincial Engineering Laboratory of Solid Waste Treatment Disposal and Recycling Wuhan 430074 China School of Integrated Circuits Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology (HUST) Wuhan 430074 China State Key Laboratory of Coal Combustion Huazhong University of Science and Technology (HUST) Wuhan 430074 China

PbS quantum dot (QD) image sensors have emerged as promising chips for a wide range of infrared (IR) imaging applications due to their monolithic integration with silicon-based readout integrated circuits. However, avoiding primary toxic Pb usage and reducing the cost of PbS QDs remains crucial for widespread application. We present a novel cost-effective and environmentally friendly hydrometallurgical process for recovering PbCl 2 from spent lead-acid battery paste to synthesize high-quality PbS QDs. The method recovers PbCl 2 with a production ratio of 97% and a purity of 99.99%. PbS QDs and photodetectors synthesized from recycled PbCl 2 (R-PbCl 2 ) have comparable performance and quality to those made using commercial PbCl 2 . R-PbCl 2 -derived photodetectors exhibit a high external quantum efficiency of 49.6% and a high specific detectivity of 6.95 × 10 12 Jones compared to published studies. Additionally, based on R-PbCl 2 , a PbS QD image sensor with 640 × 512 resolution successfully discriminated common solvents. Moreover, through life-cycle assessment and economic cost analysis, this novel synthesis route offers great advantages in the environmentally friendly use of chemical reagents and reduces the production cost of PbS QDs by 23.2% compared to commercial PbCl 2 . Thus, this work not only contributes to the green recycling of spent lead paste but also provides a low-cost strategy for synthesizing PbS QDs and their optoelectronic application.

关键词： PbS QDs photodetector infrared solar cells spent lead paste life cycle assessment

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12-bit 2.6 GS/s RF DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(RF DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of Gm and fT/fmax 10

100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of ...

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10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Zhang, K. Zhu, G.R. Kong, Y.C. Chen, T.S. Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538624166

We report excellent dc and RF performance of high-linearity AIGaN/GaN FinFETs with 100 nm T-gate. Besides a high fT of 65 GHz enabled by scaled gate length, good linearity characteristics of Gm and fT/fmax are demonstrated. Loadpull measurements show that the proposed FinFETs achieve a maximum Pout of 2.98 W/mm with an associated PAE of 64% at 4 GHz and Vd=10V, At 18 GHz, Pout and PAE turn out to 2.73 W/mm and 48%, respectively. To the best of our knowledge, this is the first demonstration of high-linearity GaN FinFETs which operate at Ku-band. © 2018 IEEE.

关键词： Gallium nitride

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Notice of Violation of IEEE Publication Principles: A 220 GHz GaN HEMT Power Amplifier

Notice of Violation of IEEE Publication Principles: A 220 GH...

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Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL)

作者： Yan Sun Shaobing Wu Haiyan Lu Yuechan Kong Tangsheng Chen Zhonghui Li Qingsheng Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Nanjing University of Aeronautics and Astronautics China

ISBN: (数字)9781728153049

ISBN: (纸本)9781728153056

Notice of Violation of IEEE Publication Principles "A 220GHz GaN HEMT Power Amplifier" by Yan Sun, Shaobing Wu, Haiyan Lu, Yuechan Kong, Tangsheng Chen, Zhonghui Li, Qingsheng Zeng in the Proceedings of the Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall), December 2019, pp. 2978-2981 After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles. This paper copied content from the papers cited below. The original content was copied without attribution (including appropriate references to the original authors and/or paper titles) and without permission. "A Beyond 110 GHz GaN Cascode Low-Noise Amplifier with 20.3 dBm Output Power" by Rainer Weber, Maciej Cwiklinski, Sandrine Wagner, Roger Lozar, Hermann Massler, Peter Bruckner, Rudiger Quay in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2018, pp. 1499-1502 "190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth" by Maciej Cwiklinski, Peter Bruckner, Stefano Leone, Christian Friesicke, Roger Lozar, Hermann Massler, Rudiger Quay, and Oliver Ambacher in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2019, pp. 1257???1260 In this paper, we present the first millimeter-wave GaN HEMT monolithic integrated circuit (MMIC) amplifier with an operating frequency at 220 GHz. This MMIC has a small-signal gain well above 11 dB at 222 GHz. Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 14dBm at 222 GHz. To our knowledge, the measured gain and output power levels are the best among any of the GaN MMICs beyond 200 GHz reported to date.

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RFIT 2019 Greetings from General Chair and General Co-Chairs

2019 IEEE International Symposium on Radio-Frequency Integra...

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2019 IEEE International Symposium on Radio-Frequency Integration technology, RFIT 2019 - Proceedings 2019年

作者： Hong, Wei Wang, Zhigong Sun, Lingling Zhang, Bing Sun, Xiaowei Southeast University China Hangzhou Dianzi University China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Shanghai Institute of Microsystems and Information Technology China

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