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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

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Journal of Semiconductors 2022年第9期43卷 64-67页

作者： Lishu Wu Jiayun Dai Yuechan Kong Tangsheng Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology Ministry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing 210096China

This letter presents the fabrication of InP double heterojunction bipolar transistors(DHBTs)on a 3-inch flexible substrate with various thickness values of the benzocyclobutene(BCB)adhesive bonding layer,the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and *** DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_(T)=358 GHz and maximum oscillation frequency f_(MAX)=530 ***,the frequency performance of the InP DHBT on flexible substrates at different bending radii are *** is shown that the bending strain has little effect on the frequency characteristics(less than 8.5%),and these bending tests prove that InP DHBT has feasible flexibility.

关键词： InP DHBT thermal resistance radio frequency bending

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

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International Symposium on Antennas and Propagation (ISAP)

作者： Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm 2 .

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC 35

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China

ISBN: (纸本)9798350396829

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high d VSdt noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1μm GaN-on-Silicon process and measured results were performed to verify the characteristics. © 2023 IEEE.

关键词： Gallium nitride

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Modeling Techniques for MHEMT Devices up to 110GHz 13

Modeling Techniques for MHEMT Devices up to 110GHz

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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021

作者： Lu, Haiyan Wu, Shaobin Chen, Jixin Chen, Tangsheng Science And Technology On Monolithic Integrated Circuits And Modules Laboratory Nanjing China Southeast University China Nanjing Electronic Devices Institute China

ISBN: (纸本)9781665434379

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. Excellent agreements between measured and simulated data are obtained in the frequency up to 110 GHz. © 2021 IEEE.

关键词： Equivalent circuits

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Lin Cheng Hongliang Lu Xiuxiu Guo Silu Yan Wei Cheng Yuming Zhang School of Microelectronics Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz.

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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A Real-time High Reliable Multi-chip Transmission technology 14

A Real-time High Reliable Multi-chip Transmission Technology

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14th International Workshop on Computer science and Engineering, WCSE 2024

作者： Gui, Jianghua Li, Bing Gao, Ying Wang, Mingjie School of Microelectronics Southeast University China School of Cyber Science and Engineering Southeast University China China Electronics Technology Group Corporation No.58 Research Institute China National Key Laboratory of Integrated Circuits and Microsystems China

ISBN: (纸本)9789819411566

In this paper, a LVDS parallel data re-calibration circuit for network interconnection on multi-chip is proposed. The operation states of the re-calibration circuit can be divided into four states: normal, empty, calibration and recovery. In each state, normal data packets that require cross chip transmission have different routing methods. During the operation of re-calibration circuit, normal data packets that need to be transmitted across chips can be routed to the destination bare chip through the bypass output channel using integrated routing algorithm. By using the ingenious isolation mechanism, not only normal data packets can be avoided to be lost, but also test data packets can be prevented from flowing into non calibrated circuit modules. So, it can ensure the normal operation of the integrated network. The re-calibration circuit proposed in this paper can enhance the reliability of multi-chip network interconnect system in real time, and has no significant impact on the system performance. © 2024 14th International Workshop on Computer science and Engineering, WCSE 2024. All rights reserved.

关键词： Calibration

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Functional GaN Heterogeneous integrated Substrate Based on Wafer Bonding and Smart-cut technology 8

Functional GaN Heterogeneous Integrated Substrate Based on W...

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8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024

作者： Ding, Jiaxin You, Tiangui Ou, Xin Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences National Key Laboratory of Materials for Integrated Circuits Shanghai200050 China University of Chinese Academy of Sciences The Center of Materials Science and Optoelectronics Engineering Beijing100049 China

ISBN: (纸本)9798331519919

This work focuses on the significant demand for breakthroughs and improvements in chip performance through the monolithic heterogeneous integration of GaN-based materials and devices with foreign substrates in the post-Moore era. It systematically conducts the fabrication of wafer-scale single-crystal GaN film and its heterogeneous integration by ion-cutting technology. © 2024 IEEE.

关键词： Single crystals

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