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6-Inch GaN/Si CMOS 1P2M monolithic Heterogeneous Process and Platformed Devices

6-Inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and...

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wen-Zhang Du Han-Zhao He Wen-Qi Fan Zhuang Wang Xiao-Dong Yang Jiao Liang Qing-Chun Zhang Hong-Ping Ma Wang Ma Li Yuan Jia-Wan Zhou Tao Wang Shu-Jun Cai Cheng Qian Guang-Sheng Zhang Xiao-Jun Fu Hong Zhou Hai-Ou Li Hong-Qiang Yang Jun-Ji Cheng Liang Li Wei Huang D.W. Zhang School of Microelectronics Fudan University Shanghai China School of Academy for Engineering & Technology Fudan University Shanghai China Genettice Co. LTD Qingdao China National Key Laboratory of Integrated Circuits and Microsystems Wuxi China National Key Laboratory of Integrated Circuits and Microsystems Chongqing China School of Microelectronics Xidian University Xi'an China Guilin University of Electronic Technology Guilin China University of Electronic Science and Technology of China Chengdu China School of Electronic Information Engineering Suzhou Vocational University Suzhou China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

To solve problems of parasitic effects in interconnects, low reliability, and three-dimensional stress associated with 3D heterogeneous and stacking of small chips, the complete process and model research of a 6-inch 20V GaN/Si CMOS 1P2M/(111) Si monolithic heterogeneous integration in the paper is put forward at the first time. Innovations have been made in high-quality patterned selective epitaxy of GaN, compatibility of GaN/Si-based P-well CMOS processes, and platformed device design. This work has overcome several engineering challenges associated with the process integration of 6-inch Si CMOS IC and GaN IC chips, leading to the development of key devices such as (1) Si PMOS with a threshold voltage/current drive (V TH /I DS (forward)) of -0.7V, 2.5 mA/mm; (2) high-performance bulk silicon PN diodes with a forward voltage (V F ) of about 0.72~0.79 V; (3) PNP and NPN silicon bipolar devices with β of approximately 260 and 300, respectively; (4) AlGaN/GaN HEMTs with V TH /I DS (forward) of -3V, 300–500 mA/mm. A prototype platform for heterogeneous integration processes, including Si CMOS and GaN processes, has been established.

关键词： Technological innovation Three-dimensional displays Multichip modules HEMTs Silicon Threshold voltage Semiconductor diodes Wide band gap semiconductors MODFETs Stress

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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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Chinese Physics B 2019年第2期28卷 400-405页

作者： Jin-Lan Li Yun Li Ling Wang Yue Xu Feng Yan Ping Han Xiao-Li Ji College of Electronic Science and Engineering Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Electronic Devices Institute College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications

In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLTS). Two Schottky barrier heights(SBHs) with different temperature dependences are found in Ni/4 H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_(1/2) and Ti(c)~a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)~a defect has a strong influence on the electrical and thermal properties of the 4 H-SiC Schottky diode.

关键词： 4H–SiC Schottky diodes Schottky barrier heights deep defects DLTS

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging 21

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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21st International Conference on Electronic Packaging technology, ICEPT 2020

作者： Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China

ISBN: (纸本)9781728168265

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 µm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 µm2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration. © 2020 IEEE.

关键词： Temperature

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.

关键词： Lithography Logic gates Gallium nitride Resists HEMTs Microwave circuits Chemicals

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Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source

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Physical Review Letters 2024年第13期132卷 133603-133603页

作者： Hong Zeng Zhao-Qin He Yun-Ru Fan Yue Luo Chen Lyu Jin-Peng Wu Yun-Bo Li Sheng Liu Dong Wang De-Chao Zhang Juan-Juan Zeng Guang-Wei Deng You Wang Hai-Zhi Song Zhen Wang Li-Xing You Kai Guo Chang-Zheng Sun Yi Luo Guang-Can Guo Qiang Zhou Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 611731 China Key Laboratory of Quantum Physics and Photonic Quantum Information Ministry of Education University of Electronic Science and Technology of China Chengdu 611731 China Department of Electronic Engineering Tsinghua University Beijing 100084 China Department of Fundamental Network Technology China Mobile Research Institute Beijing 100053 China Center for Quantum Internet Tianfu Jiangxi Laboratory Chengdu 641419 China Southwest Institute of Technical Physics Chengdu 610041 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Institute of Systems Engineering AMS Beijing 100141 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei 230026 China

An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation gH(2)(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.

关键词： Quantum entanglement Semiconductor quantum optics

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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints

arXiv

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arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

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Ultra-Wideband RF Transceiver Microsystem Based on Wafer Lever 3D Silicon Package

Ultra-Wideband RF Transceiver Microsystem Based on Wafer Lev...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Xiaolin Qi Zhiheng Zhang Xuequan Yin Xiao Li Yang Ning Yang Dai Information Science Academy China Electronics Technology Group Corporation Beijing China National Key Laboratory of Integrated Circuits and Microsystems Beijing China Aerospace Information Research Institute Chinese Academy of Sciences Beijing China The 54TH Research Institute of China Electronics Technology Group Corporation Shijiazhuang China

ISBN: (数字)9798331541095

ISBN: (纸本)9798331541101

To miniaturized and lightweight RF transceiver front-ends for communication, telemetry, detection and other multi-scenarios over a wide frequency range, this paper designs a transceiver microsystem with an operating frequency covering the C. Ku band. Based on the silicon-based 3D heterogeneous integration process, the low-noise amplifier, power amplifier, multifunctional reconfigurable transmitter chip, multifunctional reconfigurable receiver chip and other chips are integrated in high density to form an ultra-wideband RF transceiver microsystem. The microsystem has a transmission power of more than 100 mW, a receive noise figure of 3.88 dB and a reception gain of more than 70 dB in the 4–18 GHz operating band. The size of the RF transceiver microsystem is 17 mm× 10 mm×l.8 mm, which realizes miniaturization, generalization and reconfigurable integration.

关键词： Radio frequency Micromechanical devices Three-dimensional displays Radio transmitters Power amplifiers Multichip modules Receivers Transceivers Telemetry Ultra wideband technology

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24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz

24.8 A W-Band Power Amplifier with Distributed Common-Source...

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IEEE International Conference on Solid-State circuits (ISSCC)

作者： Weibo Wang Fangjin Guo Tangsheng Chen Keping Wang Tianjin University Tianjin China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (数字)9781728132051

ISBN: (纸本)9781728132068

W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and improving power density (W/mm 2 ) [1].

关键词： Power generation HEMTs Frequency measurement Gallium nitride Scattering parameters Semiconductor device measurement Impedance

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Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene

Influence of the etching process on the surface morphology o...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 cm-1 and 22 cm-1, respectively. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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