检索结果-内蒙古大学图书馆

Research on Silicon-Based Terahertz Communication integrated circuits

Chinese Journal of Electronics 2022年第3期31卷 516-533页

作者： ZHOU Peigen CHEN Jixin TANG Siyuan YU Jiayang WANG Chen LI Huanbo LU Haiyan YAN Pinpin HOU Debin CHEN Zhe HONG Wei State Key Laboratory of Millimeter Waves Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz(THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology,its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

关键词： abundant spectrum resources silicon-based process silicon-based terahertz communication integrated circuits channel capacity silicon-based semiconductor technology III-V semiconductor technology mobile data traffic millimetre wave integrated circuits future wireless communication systems millimetre wave communication radio frequency performance traditional microwave frequency bands higher system capacity data throughput mobile radio transmission data rate radio transceivers key sub-circuit chips reported silicon-based THz communication systems millimeter-wave frequency bands

来源：评论

学校读者我要写书评

暂无评论

Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

引用

Chinese Physics Letters 2010年第3期27卷 251-253页

作者：董逊李忠辉李哲洋周建军李亮李赟张岚许晓军徐轩韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

来源：评论

学校读者我要写书评

暂无评论

Structure and Strain Properties of GaN Films Grown on Si（111） Substrates with AlxGa1-xN/AlyGa1-yN Superlattices

引用

Chinese Physics Letters 2015年第5期32卷 153-156页

作者：潘磊倪金玉郁鑫鑫董逊彭大青李传皓李忠辉陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

CaN films with an AlxGa1-xN/AlyGa1-xN superlattice （SL） buffer layer are grown on Si（111） substrates by metal-organic chemical vapor deposition （MOCVD）. The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.

关键词： GaN x)N/Al_yGa y)N Superlattices Substrates with Al_xGa Structure and Strain Properties of GaN Films Grown on Si

来源：评论

学校读者我要写书评

暂无评论

A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

引用

Chinese Physics Letters 2012年第5期29卷 225-228页

作者： KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016

Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improving device transconductance is due to its unique switchable polar *** self-consistent calculation involving the switchable polarization of the paraelectric,the 2DEG properties and C-V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS *** is shown that owing to the paraelectric polarization,the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold *** self-consistent polarization of the paraelectric in the MPS structure is non-linsarly dependent on the saturated polarization,which implies an optimum saturated polarization of 5-10 μC/cm^(2) for the paraelectric.

关键词： polarization insulator saturated

来源：评论

学校读者我要写书评

暂无评论

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

引用

Chinese Physics Letters 2014年第3期31卷 129-132页

作者： YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors （HEMTs） grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage （BV） of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

关键词： HIGH electron mobility transistors RESEARCH SILICON -- Research GALLIUM nitride SEMICONDUCTOR doping PHYSICS research

来源：评论

学校读者我要写书评

暂无评论

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator

引用

Journal of Semiconductors 2015年第9期36卷 62-65页

作者：王哲力周建军孔月婵孔岑董逊杨洋陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.

关键词： enhancement-mode （E-mode） AIGaN/GaN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

来源：评论

学校读者我要写书评

暂无评论

Field plated 0.15μm GaN HEMTs for millimeter-wave application

引用

Journal of Semiconductors 2013年第6期34卷 49-53页

作者：任春江李忠辉余旭明王泉慧王雯陈堂胜张斌 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electron Devices Institute

SiN dielectrically-defined 0.15μm field plated GaN HEMTs for millimeter-wave application have been *** AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical *** beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field *** recessing was performed to control the threshold voltage of the *** fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 ***-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%,respectively,for a 0.15 mm gate width device operated at a 24 V drain *** developed 0.15μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development.

关键词： AlGaN/GaN HEMT Ohmic contact ICP etching field plate millimeter-wave application

来源：评论

学校读者我要写书评

暂无评论

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

引用

Chinese Physics B 2016年第5期25卷 448-452页

作者：李欧鹏张勇徐锐敏程伟王元牛斌陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

关键词： terahertz amplifier InP double heterojunction bipolar transistor inverted microstrip line monolithic integrated circuit

来源：评论

学校读者我要写书评

暂无评论

Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

引用

Chinese Physics Letters 2011年第12期28卷 128-131页

作者： YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016

A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is *** are presented for the field components,dispersion,power ratio,transmission loss and characteristic impedance as functions of the operating frequencies,dimensions and material *** the case of the lowest-order mode TE10,design curves covering frequencies and dimensions for the given material constants in the THz region are *** theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good *** investigation results show that by selecting proper dimensions and dielectric materials,G-PPDW can be used to guide THz waves efficiently with high power confinement and low *** outstanding properties may open up a way to many important applications for THz integrated circuits and systems.

关键词： waveguide Waveguide dimensions

来源：评论

学校读者我要写书评

暂无评论

8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

引用

2006 8th International Conference on Solid-State and integrated Circuit technology

作者： Zhong Shichang Chen Tangsheng Lin Gang Li Fuxiao National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424401615

＜正＞This paper describes a new 19.2mm GaAs PHEMT chip with high gain,high power and high power-added *** which are packaged by internal-matching use one such FET that has been Jeveloped at *** 16.5GHz,the device has achieved power,gain,and power-added efficiency of 39.1dBm,6.1dB and 26.1%respectively at the ldB gain compression *** is first reported that high gain,PAE and output power combination have achieved by a single FET power amplifier at such high frequency.

关键词： Power amplifiers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：