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3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Yaohui, Kang Weibo, Wang Jianfeng, Gao Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute NanJing China

ISBN: (纸本)9781479943548

In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHEMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip size is 3.08×3.62mm2. The amplifier were measured with a W-band on-chip test, a linear gain of 20 dB at 98 GHz and more than 17dB over the bandwidth from 95 to 100 GHz was achieved for a drain voltage Vd of 1.5V and Vg of 0.9V. © 2014 IEEE.

关键词： Foot Force Indium phosphide Logic gates MODFETs mHEMTs MHEMT T-gate W-band amplifier two step forming mHEMTs Amplifiers Modulation doped field effect transistor Indium phosphide Logic gates Foot Foot Foot British Force Structural stability

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Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mobility thus far,however,is much smaller than theoretical predictions,dominated by extrinsic factors including charge traps and impurities.

关键词： tungsten disulfide (WS2) transition metal dichalcogenides (TMDs) mobility interface

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Research and Application of Ku-Band 200W AlGaN/GaN Power HEMT with Four Cells Internal Matching

Research and Application of Ku-Band 200W AlGaN/GaN Power HEM...

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IEEE Asia-Pacific Conference on Antennas and Propagation

作者： ShiChang Zhong Tangsheng Chen Chunjiang Ren Feng Qian Chen Chen Tao Gao National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 P.R.China Nanjing Electronic Devices Institute P. O.Box 1601 Nanjing 210016 P.R. China

ISBN: (纸本)9781479988983

In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over f80W across the band of 13.7-14.5GHz, an output power more than 200W with a power gain of over 6dB, the power added efficiency (PAE) of 30.47% at 14 GHz, operated at 32V drain bias voltage (Vds) with the pulsed conditions at a duty of 1 0% with a pulse width of 100us. The package size excluding flange and leads is 17.4mm × *** is the highest output power in a 100W-class AlGaN/GaN HEMT in that such package at Ku-band to the best of our knowledge.

关键词： GaN HEMT PAE internal matching

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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening (Adv. Mater. 3/2016)

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Advanced Materials 2016年第3期28卷

作者： Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China Institute of High Performance Computing 1 Fusionopolis Way Singapore 138632 Singapore National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 P. R. China

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Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting

Novel extraction method for small-signal equivalent circuit ...

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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

作者： Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781479942466

A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150μm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT technology. © 2014 IEEE.

关键词： III-V semiconductors

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Design of a 340GHz GaAs monolithic integrated sub-harmonic mixer

Design of a 340GHz GaAs monolithic integrated sub-harmonic m...

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Asia-Pacific Conference on Microwave

作者： Ge Liu Bo Zhang Lisen Zhang Dong Xing Junlong Wang Yong Fan School of Electronic Engineering Universtity of Electronic Science and Technology of China Chengdu Sichuan China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute Shijiazhuang China

ISBN: (纸本)9781479987689

In this paper, a 340GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. The mixer circuit is fabricated on a 12um GaAs substrate included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 340 GHz mixer achieved DSB conversion loss of 6.49dB at 306.4GHz when the LO pumped power was 5.96dBm at 165GHz. The conversion loss was less than 8dB from 290GHz to 355GHz.

关键词： Mixers Schottky diodes Gallium arsenide Power harmonic filters Electromagnetic waveguides Harmonic analysis Waveguide transitions

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Field plated 0.15μm GaN HEMTs for millimeter-wave application

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Journal of Semiconductors 2013年第6期34卷 49-53页

作者：任春江李忠辉余旭明王泉慧王雯陈堂胜张斌 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electron Devices Institute

SiN dielectrically-defined 0.15μm field plated GaN HEMTs for millimeter-wave application have been *** AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical *** beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field *** recessing was performed to control the threshold voltage of the *** fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 ***-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%,respectively,for a 0.15 mm gate width device operated at a 24 V drain *** developed 0.15μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development.

关键词： AlGaN/GaN HEMT Ohmic contact ICP etching field plate millimeter-wave application

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Broadband modeling for InP DHBT over 0.2 – 220 GHz

Broadband modeling for InP DHBT over 0.2 – 220 GHz

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International Conference on Solid-State and integrated Circuit technology

作者： Zhijiang Zhou Jun Liu Lingling Sun Wei Cheng Haiyan Lu Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781479932849

Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted from measured S-parameters directly. Analytical and approximation approach used in this paper allows reducing numbers of model parameters for low frequency analysis. In order to extend the model to higher frequencies, extrinsic parameters are determined using both analytical and optimization methods. The model is verified by comparing the modeled parameters to measured parameters. The investigation results show that the excellent agreements between the measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz.

关键词： Abstracts Analytical models Calibration Scattering parameters Indium phosphide Microwave FET integrated circuits Microwave integrated circuits

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A millimeter wave 11W GaN MMIC power amplifier

A millimeter wave 11W GaN MMIC power amplifier

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479943531

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

关键词： Gallium nitride Power amplifiers HEMTs MODFETs MMICs Millimeter wave technology Microwave amplifiers

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