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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是91-100 订阅
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100nm MHEMT transistor technology for W-band amplifier  3
100nm MHEMT transistor technology for W-band amplifier
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3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014
作者: Yaohui, Kang Weibo, Wang Jianfeng, Gao Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute NanJing China
In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHEMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip s... 详细信息
来源: 评论
Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode
Simulation, fabrication and characterization of 6500V 4H-SiC...
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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013
作者: Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of ... 详细信息
来源: 评论
High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics
High-Performance Monolayer WS2 Field-effect Transistors on H...
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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)
作者: Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D
WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mo... 详细信息
来源: 评论
Research and Application of Ku-Band 200W AlGaN/GaN Power HEMT with Four Cells Internal Matching
Research and Application of Ku-Band 200W AlGaN/GaN Power HEM...
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IEEE Asia-Pacific Conference on Antennas and Propagation
作者: ShiChang Zhong Tangsheng Chen Chunjiang Ren Feng Qian Chen Chen Tao Gao National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 P.R.China Nanjing Electronic Devices Institute P. O.Box 1601 Nanjing 210016 P.R. China
In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over f80W across the band of 13.7-... 详细信息
来源: 评论
Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening (Adv. Mater. 3/2016)
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Advanced Materials 2016年 第3期28卷
作者: Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China Institute of High Performance Computing 1 Fusionopolis Way Singapore 138632 Singapore National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 P. R. China
来源: 评论
Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting
Novel extraction method for small-signal equivalent circuit ...
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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014
作者: Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector... 详细信息
来源: 评论
Design of a 340GHz GaAs monolithic integrated sub-harmonic mixer
Design of a 340GHz GaAs monolithic integrated sub-harmonic m...
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Asia-Pacific Conference on Microwave
作者: Ge Liu Bo Zhang Lisen Zhang Dong Xing Junlong Wang Yong Fan School of Electronic Engineering Universtity of Electronic Science and Technology of China Chengdu Sichuan China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute Shijiazhuang China
In this paper, a 340GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. The mixer circuit is fabricated on a 12um GaAs substrate included planar Schottky diode in a balanced ... 详细信息
来源: 评论
Field plated 0.15μm GaN HEMTs for millimeter-wave application
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Journal of Semiconductors 2013年 第6期34卷 49-53页
作者: 任春江 李忠辉 余旭明 王泉慧 王雯 陈堂胜 张斌 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electron Devices Institute
SiN dielectrically-defined 0.15μm field plated GaN HEMTs for millimeter-wave application have been *** AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an F... 详细信息
来源: 评论
Broadband modeling for InP DHBT over 0.2 – 220 GHz
Broadband modeling for InP DHBT over 0.2 – 220 GHz
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International Conference on Solid-State and integrated Circuit technology
作者: Zhijiang Zhou Jun Liu Lingling Sun Wei Cheng Haiyan Lu Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China
Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted ... 详细信息
来源: 评论
A millimeter wave 11W GaN MMIC power amplifier
A millimeter wave 11W GaN MMIC power amplifier
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China
A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility trans... 详细信息
来源: 评论