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4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

作者： Li, Yang Wei, Jianan He, Chaohui Yang, Weitao Li, Yonghong Guo, Yaxin School of Nuclear Science and Technology Xi’an Jiaotong University Xi’an China National Key Laboratory of Analog Integrated Circuits Chongqing China

ISBN: (纸本)9781665441681

AD8561 (Analog Device Inc.) MACRO-SPICE model is used to investigate the coupled effects of multiple photocurrents generated by gamma pulse radiation in its Input and Output modules. Firstly, the test circuit is built to find sensitive devices according to previous studies. Besides, Gummel-Poon bipolar junction transistor (BJT) model including photocurrent generators implemented by the exponential current sources is adopted to replace the initial device model. Finally, the effects caused by each photocurrent and multiple photocurrents under different input states are simulated and analyzed. The simulation results indicate that there are competitive relationships among the multiple photocurrents generated in the input-stage bipolar transistors, even in a single bipolar transistor, and the relationship changes with the input state. The transient upset induced by photocurrents generated in the Input and Output modules have superimposed effects on the output ports, but the transient upset duration depends mainly on the Input module. © 2021 IEEE

关键词： Radiation effects

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A design of Ka-band GaAs PHEMT power amplifier MMIC

A design of Ka-band GaAs PHEMT power amplifier MMIC

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International Symposium on Antennas, Propagation and EM Theory (ISAPE)

作者： Weizhong Li Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute Nanjing P.R. China

The design of a Ka-band power amplifier is presented. The three-stage amplifier exhibits an output power of 0.5 watt with small signal gain above 16 dB across the 32 GHz to 34 GHz band. The amplifier is characterized using linear and nonlinear methods. The stability, especially odd mode stability, is carefully considered. Both schematic and EM simulation results are shown.

关键词： Gallium arsenide PHEMTs Power amplifiers MMICs circuits Optimized production technology Power generation Impedance matching MIM capacitors Resistors

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Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power

Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the transition waveguides. To improve the power handling capabilities, a pair of GaN SBDs chips with six anodes in total is flip-chip mounted on the quartz circuit. The suspended microstrip line is employed in the circuit on quartz due to its low-attenuation characteristics at terahertz frequencies. To enhance the electrical performance of frequency doubler, low-loss transition structures are designed. The proposed frequency doubler shows a simulated output power of 300 mW with a conversion efficiency of 20% at 340 GHz.

关键词： Waveguide transitions Schottky diodes Filtering Schottky barriers Frequency conversion Scattering parameters Microstrip

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12-bit 2.6 GS/s RF DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(RF DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC 35

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China

ISBN: (纸本)9798350396829

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high d VSdt noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1μm GaN-on-Silicon process and measured results were performed to verify the characteristics. © 2023 IEEE.

关键词： Gallium nitride

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V.

关键词： Varactors Gallium nitride HEMTs Voltage-controlled oscillators Microwave oscillators MMICs Phase noise

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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 1902-1911页

作者： Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB bandwidth of 10 GHz, with a small signal gain of around 9 dB. The post-stage distributed amplifier (DA) has a -3 dB bandwidth of close to 20 GHz, with a small signal gain of around 12 dB. As a whole, the cascade preamplifier has a measured small signal gain of 21.3 dB and a transimpedance of 55.3 dBΩ in a 50 n system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence is clear and symmetric.

关键词： Optical receivers

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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UK, Europe, China Millimeter Waves and THz technology Workshop (UCMMT)

作者： Bin Niu Daoyu Fan Gang Lin Kunpeng Dai Hai-Yan Lu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute and Nanjing Chip Valley Industrial Technology Institute Nanjing China

ISBN: (数字)9781728190648

ISBN: (纸本)9781728190655

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its C j0 scaled into sub-fF range. Scalling C-V measurement showed C j0 without parasitic capacity reached 0.476fF for the 0.5μm anode diameter device. With the relative low series resistance R s of 28.8Ω, cutoff frequency f t reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.

关键词： Anodes Gallium arsenide Schottky diodes Metals Shape Resistance Probes

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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第1期28卷 24-30页

作者： Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain of 45 dBΩ. Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22 pA/√Hz, with an average value of 17.2 pA/√Hz. Having a timing jitter of 14 ps and eye amplitude of about 138 mV, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

关键词： Optical receivers

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