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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是101-110 订阅
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Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate
Low insertion loss GHz GaN SAW device fabricated on self-sta...
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Jianjun Zhou Liang Li Haiyan Lu Cen Kong Yuechan Kong Tangsheng Chen Chen Chen Xiaoyu Wang Haodong Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China Key Laboratory of Modern Acoustics Nanjing University Nanjing P. R. China
A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fin... 详细信息
来源: 评论
Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure
Observation of polarization pinning effect in PZT/AlGaN/GaN ...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China
PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to p... 详细信息
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A 42 to 56GHz wide band CMOS power amplifier
A 42 to 56GHz wide band CMOS power amplifier
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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013
作者: Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息
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Application of 1200V-8A SiC JBS diodes in the motor system
Application of 1200V-8A SiC JBS diodes in the motor system
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China
1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC... 详细信息
来源: 评论
Study on 2000V SiC JBS Diodes
Study on 2000V SiC JBS Diodes
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2013 3rd International Conference on Electric and Electronics(EEIC 2013)
作者: Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo... 详细信息
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Study on Fabrication and Fast Switching of High Voltage SiC JFET
Study on Fabrication and Fast Switching of High Voltage SiC ...
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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)
作者: Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate... 详细信息
来源: 评论
A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure
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Chinese Physics Letters 2012年 第5期29卷 225-228页
作者: KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016
Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improv... 详细信息
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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)
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science China(Technological sciences) 2012年 第11期55卷 3200-3203页
作者: GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is ob... 详细信息
来源: 评论
The research on mm-wave power amplifier MMIC
The research on mm-wave power amplifier MMIC
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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Zhang, Bin Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed a... 详细信息
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Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method
Investigation of millimeter-wave GaN HEMTs and a quick small...
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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore
Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various ... 详细信息
来源: 评论