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Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs

A Simple Method to Accurately Determine the Temperature Depe...

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2012 IEEE 11th International Conference on Solid-State and integrated Circuit technology(ICSICT-2012)

作者： Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467324748

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors（HBTs）on ambient and junction temperatures is presented.A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature *** method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2,fabricated with an in-house InP HBT technology.

关键词： Heterojunction Bipolar Transistor thermal resistance model extraction

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Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

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Chinese Physics Letters 2011年第12期28卷 128-131页

作者： YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016

A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is *** are presented for the field components,dispersion,power ratio,transmission loss and characteristic impedance as functions of the operating frequencies,dimensions and material *** the case of the lowest-order mode TE10,design curves covering frequencies and dimensions for the given material constants in the THz region are *** theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good *** investigation results show that by selecting proper dimensions and dielectric materials,G-PPDW can be used to guide THz waves efficiently with high power confinement and low *** outstanding properties may open up a way to many important applications for THz integrated circuits and systems.

关键词： waveguide Waveguide dimensions

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Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]

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Optics Communications 2012年第5期285卷 857-857页

作者： Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China

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Influence of silicon cluster on epitaxial growth of silicon carbide

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science China(Physics,Mechanics & Astronomy) 2011年第9期54卷 1579-1582页

作者： LI ZheYang LI Yun CHEN Chen HAN Pin Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China National Key Laboratory of Monolithic Integrated Circuits and Modules the 55th Research Institute of CETC Nanjing 210016 China

Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.

关键词： 4H-SiC horizontal hot-wall CVD C/Si ratio growth rate doping concentration silicon cluster

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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低温GaN插入层对AlGaN/GaN二维电子气特性的改善

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品2DEG的电子迁移率达到2110 cm2/V.s。

关键词：异质结半导体低温氮化镓插入层二维电子气性能改善电子迁移率

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China

关键词： Varactors Gallium nitride HEMTs Voltage-controlled oscillators Microwave oscillators MMICs Phase noise

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