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IEEE Electron Device Letters 2022年 1-1页

作者： Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China

A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE

关键词： Threshold voltage

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Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

Low insertion loss GHz GaN SAW device fabricated on self-sta...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Jianjun Zhou Liang Li Haiyan Lu Cen Kong Yuechan Kong Tangsheng Chen Chen Chen Xiaoyu Wang Haodong Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China Key Laboratory of Modern Acoustics Nanjing University Nanjing P. R. China

ISBN: (纸本)9781479943531

A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fingers and spacing have been fabricated on self-standing GaN substrate. On wafer measurement of the S parameters have demonstrated the operation at approximately 2 GHz with 10dB insertion loss.

关键词： Gallium nitride Surface acoustic wave devices Substrates Insertion loss Loss measurement HEMTs MODFETs

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Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure

Observation of polarization pinning effect in PZT/AlGaN/GaN ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China

ISBN: (纸本)9781479923366

PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to positive) starting voltage increases from -10 V to -18 V, the C-V curve shifts positively with the threshold voltage varying from -2.4 V to 1.1 V, whereas the down-sweep (from positive to negative) C-V curve hardly move with different starting voltage. The field-history dependent polarization effect of ferroelectrics is involved into a self-consistent calculation, by which the nature of the asymmetric C-V curve shift is disclosed to be the polarization pinning effect of the underlying AlGaN layer. The results take an insight into the interface polarization coupling in GaN-based MFS structure for memory device applications.

关键词： Gallium nitride TV Capacitance-voltage characteristics

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Design of a RF Doherty Power Amplifier Based on Handset Application

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yujie Tang Yingjie Zhou Hao Zhou Lei Yang Yuan Zheng Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc.

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System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.

关键词： Sigma-delta modulation Microwave integrated circuits Frequency modulation Simulation Bandwidth Millimeter wave integrated circuits integrated circuit modeling

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Ziqian Jiang Jie Xu Xiaopeng Li Youtao Zhang Changchun Zhang Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average.

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Jiayun Dai Fei Wang Lida Xu Desheng Zhao Ping Han Tangshen Chen National Laboratory of Solid State Microstructure Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Nano Fabrication Facility Suzhou Institute of Nanotech and Nano-bionics Suzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 μm fine pitch gold and indium miro-bumps with 10 μm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 μm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 μm 2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration.

关键词： Bonding Gold Silicon Wafer bonding Indium Surface morphology Resistance

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A Real-time High Reliable Multi-chip Transmission technology 14

A Real-time High Reliable Multi-chip Transmission Technology

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14th International Workshop on Computer science and Engineering, WCSE 2024

作者： Gui, Jianghua Li, Bing Gao, Ying Wang, Mingjie School of Microelectronics Southeast University China School of Cyber Science and Engineering Southeast University China China Electronics Technology Group Corporation No.58 Research Institute China National Key Laboratory of Integrated Circuits and Microsystems China

ISBN: (纸本)9789819411566

In this paper, a LVDS parallel data re-calibration circuit for network interconnection on multi-chip is proposed. The operation states of the re-calibration circuit can be divided into four states: normal, empty, calibration and recovery. In each state, normal data packets that require cross chip transmission have different routing methods. During the operation of re-calibration circuit, normal data packets that need to be transmitted across chips can be routed to the destination bare chip through the bypass output channel using integrated routing algorithm. By using the ingenious isolation mechanism, not only normal data packets can be avoided to be lost, but also test data packets can be prevented from flowing into non calibrated circuit modules. So, it can ensure the normal operation of the integrated network. The re-calibration circuit proposed in this paper can enhance the reliability of multi-chip network interconnect system in real time, and has no significant impact on the system performance. © 2024 14th International Workshop on Computer science and Engineering, WCSE 2024. All rights reserved.

关键词： Calibration

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Functional GaN Heterogeneous integrated Substrate Based on Wafer Bonding and Smart-cut technology 8

Functional GaN Heterogeneous Integrated Substrate Based on W...

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8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024

作者： Ding, Jiaxin You, Tiangui Ou, Xin Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences National Key Laboratory of Materials for Integrated Circuits Shanghai200050 China University of Chinese Academy of Sciences The Center of Materials Science and Optoelectronics Engineering Beijing100049 China

ISBN: (纸本)9798331519919

This work focuses on the significant demand for breakthroughs and improvements in chip performance through the monolithic heterogeneous integration of GaN-based materials and devices with foreign substrates in the post-Moore era. It systematically conducts the fabrication of wafer-scale single-crystal GaN film and its heterogeneous integration by ion-cutting technology. © 2024 IEEE.

关键词： Single crystals

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience & technology, China 2015

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Physics Nanjing University Institute of High Performance Computing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides. The measured field-effect mobility thus far, however, is much smaller than theoretical predictions, dominated by extrinsic factors including charge traps and impurities. Here, we report that the combination of high-quality Al2O3 dielectric substrate and thiol chemistry passivation could effectively reduce the interface traps and Coulomb impurities, leading to a significant improvement of device performances. Especially, metallic transport is observed at higher carrier density and low temperature. Moreover, through repairing sulfur vacancies, record high mobility is reached at room temperature(83 cm2V-1s-1) and low temperature(337 cm2V-1s-1). Furthermore, we develop a theoretical model for explaining charge transport in the monolayer WS2. Our work provides a viable route towards studying intrinsic charge transport in monolayer WS2 devices.

关键词： tungsten disulfide(WS2),transition metal dichalcogenides(TMDs),mobility,interface

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