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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是121-130 订阅
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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures
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Chinese Physics Letters 2010年 第3期27卷 251-253页
作者: 董逊 李忠辉 李哲洋 周建军 李亮 李赟 张岚 许晓军 徐轩 韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016
InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to impro... 详细信息
来源: 评论
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...
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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010
作者: Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric con... 详细信息
来源: 评论
Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure
Simulation of polarization pinning effect in PZT/AlGaN/GaN m...
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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010
作者: Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymme... 详细信息
来源: 评论
InAlN/AlN/GaN HEMTs on sapphire substrate
InAlN/AlN/GaN HEMTs on sapphire substrate
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this... 详细信息
来源: 评论
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constan... 详细信息
来源: 评论
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmet... 详细信息
来源: 评论
Through-silicon via technologies for interconnects in RF MEMS
Through-silicon via technologies for interconnects in RF MEM...
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Design, Test, Integration and Packaging of MEMS/MOEMS
作者: Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China
Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is de... 详细信息
来源: 评论
A 108 GHz GaAs MHEMT VCO MMIC
A 108 GHz GaAs MHEMT VCO MMIC
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2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009
作者: Wang, Weibo Wang, Zhigong Zhang, Bin Kang, Yaohui Wu, Liqun Yang, Naibin Institute of RF-and OE-ICs Southeast University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China
A W-Band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through... 详细信息
来源: 评论
A 108 GHz GaAs MHEMT VCO MMIC
A 108 GHz GaAs MHEMT VCO MMIC
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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)
作者: Weibo Wang Zhigong Wang Bin Zhang Yaohui Kang Liqun Wu Naibin Yang Institute of RF-&OE-ICs Southeast University Nanjing China Institute of RF &OE ICs South-East University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China
A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through... 详细信息
来源: 评论
A design of C-band improved radial power combiner
A design of C-band improved radial power combiner
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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008
作者: Haifeng, Cheng Bin, Zhang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China
This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved rad... 详细信息
来源: 评论