检索结果-内蒙古大学图书馆

2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Shuai Wang Gang Lin TangSheng Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016

A 0.15μm GaAs-based PHEMT process on 100ram wafers using 248nm stepper based technology for millimeter wave applications is *** process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15pro PHEMTs with high-aspect-ratio (≈4.5) gates are successfully fabricated using this process,exhibiting a good millimeter-wave performance with a fT of 82.7GHz and a power gain greater than 15dB at 12GHz.

关键词： Fabrication PHEMTs Millimeter wave technology Parasitic capacitance Throughput Cutoff frequency Passivation Lithography Filling Laboratories

来源：评论

学校读者我要写书评

暂无评论

A 14-22GHz monolithic Double-Balanced Passive Mixer

A 14-22GHz Monolithic Double-Balanced Passive Mixer

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .

关键词： Resistors Radio frequency MOSFET Spirals Baluns Simulation PHEMTs

来源：评论

学校读者我要写书评

暂无评论

A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP DHBT technology 14

A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP...

引用

14th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2018

作者： Li, Xiaopeng Wang, Zhigong Zhang, Yi Zhang, Youtao Zhang, Min Institute of RF - OE ICs Southeast University Nanjing210096 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Nanjing Electronic Devices Institute Nanjing210016 China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210046 China State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538644409

In this paper, an ultra-high-speed ultra-wide-bandwidth one-bit analog-to-digital converter (ADC) is implemented. The chip uses a latched high-sensitivity comparator to achieve one-bit quantization, and an integrated 1:8 demultiplexer to reduce the data rate of the output ports, which is helpful for system applications. The chip is implemented with a 0.7μm InP DHBT process. Measurement results show that the sampling rate of the chip is up to 13GS/s, the analog input bandwidth is greater than 18GHz, the input sensitivity is less than -25dBm, and the power consumption is 1.2W. © 2018 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

引用

International Conference on integrated circuits and Microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： Microwave integrated circuits Power demand Pipelines Layout Voltage Microwave circuits Calibration

来源：评论

学校读者我要写书评

暂无评论

A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

来源：评论

学校读者我要写书评

暂无评论

High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

引用

The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mobility thus far,however,is much smaller than theoretical predictions,dominated by extrinsic factors including charge traps and impurities.

关键词： tungsten disulfide (WS2) transition metal dichalcogenides (TMDs) mobility interface

来源：评论

学校读者我要写书评

暂无评论

6-inch GaN/Si CMOS 1P2M monolithic Heterogeneous Process and Platformed Devices 21

6-inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and...

引用

21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024

作者： Du, Wen-Zhang He, Han-Zhao Fan, Wen-Qi Wang, Zhuang Yang, Xiao-Dong Liang, Jiao Zhang, Qing-Chun Ma, Hong-Ping Ma, Wang Yuan, Li Zhou, Jia-Wan Wang, Tao Cai, Shu-Jun Qian, Cheng Zhang, Guang-Sheng Fu, Xiao-Jun Zhou, Hong Li, Hai-Ou Yang, Hong-Qiang Cheng, Jun-Ji Li, Liang Huang, Wei Zhang, D.W. School of Microelectronics Fudan University Shanghai200433 China School of Academy for Engineering & Technology Fudan University Shanghai200433 China Genettice Co. LTD Qingdao266200 China National Key Laboratory of Integrated Circuits and Microsystems Wuxi214035 China National Key Laboratory of Integrated Circuits and Microsystems Chongqing400060 China School of Microelectronics Xidian University Xi'an710071 China Guilin University of Electronic Technology Guilin541004 China University of Electronic Science and Technology of China Chengdu610054 China School of Electronic Information Engineering Suzhou Vocational University Suzhou215104 China

ISBN: (纸本)9798331541149

To solve problems of parasitic effects in interconnects, low reliability, and three-dimensional stress associated with 3D heterogeneous and stacking of small chips, the complete process and model research of a 6-inch 20V GaN/Si CMOS 1P2M/(111) Si monolithic heterogeneous integration in the paper is put forward at the first time. Innovations have been made in high-quality patterned selective epitaxy of GaN, compatibility of GaN/Si-based P-well CMOS processes, and platformed device design. This work has overcome several engineering challenges associated with the process integration of 6-inch Si CMOS IC and GaN IC chips, leading to the development of key devices such as (1) Si PMOS with a threshold voltage/current drive (VTH/IDS (forward)) of -0.7V, 2.5 mA/mm;(2) high-performance bulk silicon PN diodes with a forward voltage (VF) of about 0.72~0.79 V;(3) PNP and NPN silicon bipolar devices with β of approximately 260 and 300, respectively;(4) AlGaN/GaN HEMTs with VTH/IDS (forward) of -3V, 300-500 mA/mm. A prototype platform for heterogeneous integration processes, including Si CMOS and GaN processes, has been established. ©2024 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

引用

International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Study of GaAs 0.5 μm PHEMT switch standard process

引用

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2006年第4期26卷 545-549页

作者： Li, Fuxiao Zheng, Hua Zheng, Weibin Lin, Gang Wu, Zhenhai Huang, Qing'an Key Laboratory of MEMS Southeast University Nanjing 210096 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

The 0.5 μm PHEMT switch process, especially for the critical processing steps, is monitored by using in-process monitoring techniques: PCM, from which the data are gathered, and the process capability of key process nodes is evaluated by Cpk. The resulting data are analyzed by appropriate SPC methods, which make the standard process being under control. Therefore the process is improved, and the yield is increasing. The reliability of switch and passive elements in MMICs is evaluated by using REM technology in this switch standard process. Researched data shows that the PCM yield of this standard PHEMT switch process reaches 90%, and the product yield of switch and attenuator MMICs is more than 80%. The failure rate of switch MMICs is less than 400 Fit at the maximum operating temerature 85°C at a 90% confidence level, so the products meet the customer requirements.

关键词： Semiconducting gallium arsenide

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：