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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

Chinese Physics Letters 2010年第3期27卷 251-253页

作者：董逊李忠辉李哲洋周建军李亮李赟张岚许晓军徐轩韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated. © 2010 IEEE.

关键词： Strontium titanates

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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transcooductance 200 mS/mm was obtained with lum gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.

关键词： Gallium nitride HEMTs Dielectrics and electrical insulation Dielectric materials Metal-insulator structures High-K gate dielectrics Binary search trees Chemical vapor deposition MOCVD Inorganic materials

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Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...

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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into selfconsistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 uC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment.

关键词： Polarization Aluminum gallium nitride Gallium nitride Ferroelectric materials Capacitance-voltage characteristics Voltage integrated circuit technology Buffer layers Electric variables measurement Performance evaluation

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Through-silicon via technologies for interconnects in RF MEMS

Through-silicon via technologies for interconnects in RF MEM...

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Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China

Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 mm times mm. Using it as interconnections for 3-dimentional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. After measurement it exhibits an insertion loss of less than 3.5 dB from 26.5 GHz to 34 GHz and an amplitude variation of less than 2 dB. The total size of the chip is 6.3 mm times 3.2 mm.

关键词： Radiofrequency microelectromechanical systems Through-silicon vias integrated circuit interconnections Plasma measurements integrated circuit technology Millimeter wave technology Loss measurement Semiconductor device measurement integrated circuit measurements Insertion loss

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A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

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2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

作者： Wang, Weibo Wang, Zhigong Zhang, Bin Kang, Yaohui Wu, Liqun Yang, Naibin Institute of RF-and OE-ICs Southeast University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China

ISBN: (纸本)9781424440740

A W-Band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15um GaAs MHEMT technology ,the mmic typically oscillates at the 108GHz and ranges from 106.8GHz to 108.4GHz,, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5dBm respectively. ©2009 IEEE.

关键词： monolithic microwave integrated circuits

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A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Weibo Wang Zhigong Wang Bin Zhang Yaohui Kang Liqun Wu Naibin Yang Institute of RF-&OE-ICs Southeast University Nanjing China Institute of RF &OE ICs South-East University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China

A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15 um GaAs MHEMT technology, the mmic typically oscillates at the 108 GHz and ranges from 106.8 GHz to 108.4 GHz, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5 dBm respectively.

关键词： Gallium arsenide mHEMTs Voltage-controlled oscillators MMICs Negative feedback Feedback loop Impedance matching Frequency Voltage Power generation

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A design of C-band improved radial power combiner

A design of C-band improved radial power combiner

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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008

作者： Haifeng, Cheng Bin, Zhang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved radial power combiner worked at 5-6GHz which has the VSWRs of both input and output >1.7, the ports imbalance of the amplitude >±0.4, as well as the phase >±2 degrees, a high isolations, and also has a small size of 56mm diameter. The combiner is expected to reach an efficiency of near 90%. © 2008 IEEE.

关键词： Power amplifiers

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