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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是131-140 订阅
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Research and Application of Ku-Band 200W AlGaN/GaN Power HEMT with Four Cells Internal Matching
Research and Application of Ku-Band 200W AlGaN/GaN Power HEM...
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IEEE Asia-Pacific Conference on Antennas and Propagation
作者: ShiChang Zhong Tangsheng Chen Chunjiang Ren Feng Qian Chen Chen Tao Gao National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 P.R.China Nanjing Electronic Devices Institute P. O.Box 1601 Nanjing 210016 P.R. China
In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over f80W across the band of 13.7-... 详细信息
来源: 评论
Process Development of Manifold Microchannels Cooling for Embedded Silicon Fan-Out (MMC-eSiFO) Package
Process Development of Manifold Microchannels Cooling for Em...
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Electronic Components and technology Conference (ECTC)
作者: Zhou Yang Yuchi Yang Peijue Lyu Jianyu Du Lang Chen Jin Kang Weihai Bu Kai Zheng Yikang Zhou Chi Zhang Wei Wang School of Integrated Circuits Peking University Beijing China Semiconductor Technology Innovation Center (Beijing) Corporation Beijing China School of Integrated Circuits Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China
As Moore’s Law tends to reach its limits, shrinking process technology nodes is no longer the most effective way to improve the performance of systems, and more attention is being focused on advanced packaging. Therm... 详细信息
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Hybrid and integrated Schottky diode based 330GHz and 420GHz subharmonic mixers
Hybrid and integrated Schottky diode based 330GHz and 420GHz...
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International Applied Computational Electromagnetics Society Symposium in China
作者: Bo Zhang Ge Liu Lisen Zhang Dong Xing Junlong Wang Yong Fan School of Electronic Engineering Universtity of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute
This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF key laboratory of Fundamental science of Universtity of Electronic science and technology of China. Hybrid a... 详细信息
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Design of a 420GHz GaAs monolithic integrated Sub-Harmonic Mixer
Design of a 420GHz GaAs Monolithic Integrated Sub-Harmonic M...
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2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies
作者: Ge Liu Bo Zhang Yong Fan Lisen Zhang Dong Xing Junlong Wang School of Electronic Engineering Universtity of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute
In this paper,a 420 GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is *** combine the diode 3D model,nonlinear model and passive circuit by field-circuit method,then optimize the circ... 详细信息
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A 108 GHz GaAs MHEMT VCO MMIC
A 108 GHz GaAs MHEMT VCO MMIC
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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)
作者: Weibo Wang Zhigong Wang Bin Zhang Yaohui Kang Liqun Wu Naibin Yang Institute of RF-&OE-ICs Southeast University Nanjing China Institute of RF &OE ICs South-East University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China
A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through... 详细信息
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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints
arXiv
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arXiv 2022年
作者: Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliabl... 详细信息
来源: 评论
Two-dimensional materials for future information technology: status and prospects
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science China(Information sciences) 2024年 第6期67卷 1-147页
作者: Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct
Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) ... 详细信息
来源: 评论
monolithically integrated 850 nm optical receiver front end
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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年 第3期27卷 350-355页
作者: Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China
An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a ... 详细信息
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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology
Design of A 0.5~50GHz Differential Distributed Amplifier Bas...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the... 详细信息
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Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]
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Optics Communications 2012年 第5期285卷 857-857页
作者: Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China
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