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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008

作者： Xiaofeng, Pan Ya, Shen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424421855

This paper describes design consideration and performance of a u band monolithic phase shifter utili ing .25 um HEMT switches. The de eloped bit phase shifter demonstrates an o erall phase de iation less than 1.5 rms and an insertion loss ariation less than .35 d rms from 12 to 15 H . For all 4 states, the insertion loss is measured to be d and the S R is less than 1.4. The chip si e of the monolithic phase shifter is 3.1 mm × 1mm. © 2008 IEEE.

关键词： Insertion losses

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Approaches for improving LO-RF isolation of MMIC 90-hybrid-IRM

Approaches for improving LO-RF isolation of MMIC 90-hybrid-I...

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2008 International Conference on Microwave and Millimeter Wave technology, ICMMT

作者： Shen, Yiming Peng, Longxin National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424418794

Image Reject Mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced schottky diode mixer using 90 hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods. ©2008 IEEE.

关键词： monolithic microwave integrated circuits

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Development of High-Power SiC MESFETs for Microwave Applications

Development of High-Power SiC MESFETs for Microwave Applicat...

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2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Gang Chen Chen Chen Peng Wu Zheyang Li Zhong Feng Youquan Jiang Song Bai Chuan Lin Kai Shao National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Ins National Key Laboratory of Monolithic ntegrated Circuits and Modules Nanjing Electronic Devices Inst National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Ins

SiC MESFETs were fabricated using in-house grown epitaxial structures on semi-insulating 4H-SiC ***-plate technique was used to enhance power *** and small-signal characteristics were measured for small gate-periphery devices. Packaged 20-ram SiC MESFET transistors were demonstrated with a saturated power 80 W and 44％ drain efficiency with the pulsed condition at a duty cycle of 10％ and 300 μsec pulse width.A SiC MESFET amplifier was developed for S-band operations consisting of internally partial-matched SiC MESFETs. The amplifier delivered a peak power of 280 W under pulsed operation with 8.6 dB power gain at 2 GHz and 65 V drain voltage.

关键词： Silicon carbide MESFETs Pulse amplifiers Space vector pulse width modulation Operational amplifiers Microwave devices Substrates Packaging Microwave transistors Power amplifiers

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14 W X-band AlGaN/GaN HEMT power MMICs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第6期29卷 1027-1030页

作者： Chen, Tangsheng Zhang, Bin Ren, Chunjiang Jiao, Gang Zheng, Weibin Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

The development of an AlGaN/GaN HEMT power MMIC on Sl-SiC designed in microstrip technology is presented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10 W with over 12 dB power gain across the band of 9-11 GHz at a drain bias of 30 V. Peak output power inside the band reaches 14.7 W with a power gain of 13.7 dB and a PAE of 23%. The MMIC chip size is only 2.0 mm × 1.1 mm. This work shows superiority over previously reported X-band AlGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.

关键词： monolithic microwave integrated circuits

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Approaches for improving LO-RF isolation of MMIC 90°-hybrid-IRM

Approaches for improving LO-RF isolation of MMIC 90°-hybrid...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yiming Shen Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute China

Image reject mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced Schottky diode mixer using 90deg hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced Schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods.

关键词： MMICs Radio frequency Schottky diodes Voltage Mixers RF signals Acoustic reflection PHEMTs Dynamic range circuits

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A design of multiport waveguide power combiner

A design of multiport waveguide power combiner

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International Conference on Solid-State and integrated Circuit technology

作者： Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

A method of X-band power combining using rectangular waveguide is proposed and studied in this paper. Waveguide combiner has good efficiency, which is suitable for power combining at higher frequencies and higher power levels especially. We fabricated the waveguide combiner by accurate process, and VSWR<1.2, Loss<0.2 dB over 600M bandwidth with combining efficiency of 95% at center frequency is achieved. Measured results show a good agreement with simulated ones.

关键词： Power combiners Electromagnetic waveguides Planar waveguides Frequency High power amplifiers Impedance matching Insertion loss Rectangular waveguides Degradation Power system reliability

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A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emitters

A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emi...

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2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Yan Zhao Zheng Zhang Jianfeng Gao National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016

InP/InGaAs/lnP double heteroj unction bipolar transistors(DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1×10μm have demonstrated a p... 详细信息

关键词： Indium phosphide Indium gallium arsenide Etching DH-HEMTs Resists Heterojunction bipolar transistors Differential amplifiers Optical amplifiers High power amplifiers Low-noise amplifiers

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X-Band microstrip AlGaN/GaN HEMT Power MMICs

X-Band microstrip AlGaN/GaN HEMT Power MMICs

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2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008

作者： Tangsheng, Chen Bin, Zhang Chunjiang, Ren Gang, Jiao Weibin, Zheng Chen, Chen Kai, Shao Naibin, Yang National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 China Nanjing Electronic Devices Institute P.O.Box 1601 Nanjing 210016 China

ISBN: (纸本)9781424419401

X-Band AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented in this paper Recessed-gate and tield-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-parameter measurements show a strong dependence of the frequency performances of the AlGaN/GaN HEMTs on the operating voltage. Higher operating voltage is key to get higher power gain for the AlGaN/GaN HEMTs. The developed 2-stage power MMIC delivers a pulsed output power in excess of 10W at a drain bias of 30V with a power gain of more than 12dB over the band of 9-llGHz. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a power-added-efflciency (PAE) of 23%. The MMIC chip size is only ***. This work shows superiority over reported results of X-band AlGaN/GaN HEMT power MMICs up to date in output power per millimeter gate width and output power per unit chip size. © 2008 IEEE.

关键词： monolithic microwave integrated circuits

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Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： Pan Xiaofeng Shen Ya National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China

This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing 0.25-um PHEMT *** developed 6-bit phase shifter demonstrates an overall phase deviation less than 1.5 rnis and an insertion loss variation less than 0.35 dB rms from 12 to 15 *** all 64 states,the insertion loss is measured to be 9 dB and the VSWR is less than 1.4. The chip size of the monolithic phase shifter is 3.1 mm X 1mm.

关键词： PHEMT Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

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A Design of C-Band Improved Radial Power Combiner

A Design of C-Band Improved Radial Power Combiner

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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： CHENG Haifeng ZHANG bin National Key Laboratory of Monolithic Integrated circuits & modules Nanjing Electronic Devices InstituteP.R.China

This paper shows a design of improved radial power combiner used for combining a large number of MMIC power *** analyzed the characteristics of the MMIC power amplifiers,and developed a 16 way improved radial power combiner worked at 5-6GHz which has the VSWRs of both input and output <1.7,tiie ports imbalance of the amplitude <±0.4,as well as the phase <±2 degrees,a high isolations,and also has a small size of 56mm *** combiner is expected to reach an efficiency of near 90%.

关键词： A Design of C-Band Improved Radial Power Combiner

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