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IEEE Asia-Pacific Conference on Antennas and Propagation

作者： ShiChang Zhong Tangsheng Chen Chunjiang Ren Feng Qian Chen Chen Tao Gao National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 P.R.China Nanjing Electronic Devices Institute P. O.Box 1601 Nanjing 210016 P.R. China

ISBN: (纸本)9781479988983

In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over f80W across the band of 13.7-14.5GHz, an output power more than 200W with a power gain of over 6dB, the power added efficiency (PAE) of 30.47% at 14 GHz, operated at 32V drain bias voltage (Vds) with the pulsed conditions at a duty of 1 0% with a pulse width of 100us. The package size excluding flange and leads is 17.4mm × *** is the highest output power in a 100W-class AlGaN/GaN HEMT in that such package at Ku-band to the best of our knowledge.

关键词： GaN HEMT PAE internal matching

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Process Development of Manifold Microchannels Cooling for Embedded Silicon Fan-Out (MMC-eSiFO) Package

Process Development of Manifold Microchannels Cooling for Em...

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Electronic Components and technology Conference (ECTC)

作者： Zhou Yang Yuchi Yang Peijue Lyu Jianyu Du Lang Chen Jin Kang Weihai Bu Kai Zheng Yikang Zhou Chi Zhang Wei Wang School of Integrated Circuits Peking University Beijing China Semiconductor Technology Innovation Center (Beijing) Corporation Beijing China School of Integrated Circuits Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China

ISBN: (数字)9798350375985

ISBN: (纸本)9798350375992

As Moore’s Law tends to reach its limits, shrinking process technology nodes is no longer the most effective way to improve the performance of systems, and more attention is being focused on advanced packaging. Thermal dissipation as the main issue severely limits the reliability of 3D stacked modules. Embedded cooling is a feasible solution for interlayer cooling. However, the current manifold is incompatible with advanced packaging processes due to the footprint and manufacturing process. In this work, a manifold microfluidic cooling structure for embedded silicon Fan-Out (MMC-eSiFO) package is proposed and the thermal test vehicle (TTV) is designed, fabricated and tested. A silicon-based interposer is formed using a wafer bonding process by etching a cavity structure and a manifold channel on two silicon wafers, respectively. The large-area high-power chip is embedded into the cavity for effective cooling by the embedded microchannels. A high-density redistribution layer (RDL) is used to fan out the electrical I/O after fabricating the dielectric layer on the surface. In addition, multi-layer embedded liquid cooling of 3D package structure can be achieved by interposer with through silicon vias (TSVs). The use of a silicon-based interposer not only enables high aspect ratio TSVs and high-density RDL but also helps to reduce thermal stress in the package structure, as the interposer material is the same as the IC chip material. It is worth noting that the fabrication of the interposer and fan-out layer is wafer-level processing that enables production at scale. Multiple sets of cavities and manifold channels can be etched in a single package structure, making it compatible with chiplet technology. The package structure is expected to solve the thermal dissipation problem of multi-layer multi-chip assemblies.

关键词： Manifolds Fabrication Wafer bonding Three-dimensional displays Cooling Packaging Silicon

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Hybrid and integrated Schottky diode based 330GHz and 420GHz subharmonic mixers

Hybrid and integrated Schottky diode based 330GHz and 420GHz...

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International Applied Computational Electromagnetics Society Symposium in China

作者： Bo Zhang Ge Liu Lisen Zhang Dong Xing Junlong Wang Yong Fan School of Electronic Engineering Universtity of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute

ISBN: (纸本)9781509043118

This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF key laboratory of Fundamental science of Universtity of Electronic science and technology of China. Hybrid and integrated GaAs Schottky diode based 330GHz and 420GHz subharmonic mixers are designed, fabricated and measured. Test results show that the minimum conversion loss of 330GHz monolithic integrated sub-harmonic mixer is 10.4dB at 328GHz, SSB conversion loss is less than 14.7dB from 320GHz to 340GHz when the LO power is 5mW;the minimum conversion loss of the 420GHz hybrid sub-harmonic mixer is 9.99dB at 406GHz, the SSB conversion loss is less than 15dB from 380GHz to 430GHz when the local power is 6dBm;the minimum conversion loss of the 420GHz heterogeneous integrated sub-harmonic mixer is 10dB at 419GHz and 422GHz, SSB conversion loss is less than 14.7dB over 400GHz to 440GHz frequency range when the LO power is 5.2dBm at 210GHz.

关键词： Mixers Schottky diodes Microstrip filters Amplitude modulation integrated circuit modeling Microstrip components

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Design of a 420GHz GaAs monolithic integrated Sub-Harmonic Mixer

Design of a 420GHz GaAs Monolithic Integrated Sub-Harmonic M...

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2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies

作者： Ge Liu Bo Zhang Yong Fan Lisen Zhang Dong Xing Junlong Wang School of Electronic Engineering Universtity of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute

In this paper,a 420 GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is *** combine the diode 3D model,nonlinear model and passive circuit by field-circuit method,then optimize the circuit through harmonic balanced method,finally study the GaAs monolithic integrated 420 GHz sub-harmonic *** results for the mixer achieved DSB conversion loss of 7.161 dB at420.4GHz when the LO pumped power was 6dBm at210 *** conversion loss was less than 9dB from384 GHz to 451 GHz.

关键词： sub-harmonic mixer schottky diode monolithic GaAs

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A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Weibo Wang Zhigong Wang Bin Zhang Yaohui Kang Liqun Wu Naibin Yang Institute of RF-&OE-ICs Southeast University Nanjing China Institute of RF &OE ICs South-East University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China

A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15 um GaAs MHEMT technology, the mmic typically oscillates at the 108 GHz and ranges from 106.8 GHz to 108.4 GHz, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5 dBm respectively.

关键词： Gallium arsenide mHEMTs Voltage-controlled oscillators MMICs Negative feedback Feedback loop Impedance matching Frequency Voltage Power generation

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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints

arXiv

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arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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monolithically integrated 850 nm optical receiver front end

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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年第3期27卷 350-355页

作者： Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China

An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal (MSM) photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm2 and 0.15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ;The front end has a relatively clear output eye diagram for the 850 nm optical signal modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.

关键词： Optical receivers

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers Microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]

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Optics Communications 2012年第5期285卷 857-857页

作者： Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China

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