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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China

A method of X-band power combining using rectangular waveguide is proposed and studied in this *** combiner has good efficiency,which is suitable for power combining at higher frequencies and higher power levels especially. We fabricated the waveguide combiner by accurate process,and VSWR<1.2,Loss<0.2dB over 600M bandwidth with combining efficiency of 95%at center frequency is *** results show a good agreement with simulated ones.

关键词： Power Combiner Power Divider Waveguide

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A design of Ka-band GaAs PHEMT power amplifier MMIC

A design of Ka-band GaAs PHEMT power amplifier MMIC

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International Symposium on Antennas, Propagation and EM Theory (ISAPE)

作者： Weizhong Li Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute Nanjing P.R. China

The design of a Ka-band power amplifier is presented. The three-stage amplifier exhibits an output power of 0.5 watt with small signal gain above 16 dB across the 32 GHz to 34 GHz band. The amplifier is characterized using linear and nonlinear methods. The stability, especially odd mode stability, is carefully considered. Both schematic and EM simulation results are shown.

关键词： Gallium arsenide PHEMTs Power amplifiers MMICs circuits Optimized production technology Power generation Impedance matching MIM capacitors Resistors

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A Novel 0.15-μm High-Aspect-Ratio T-shaped Gate Fabrication Process Using a 248nm DUV Stepper

A Novel 0.15-μm High-Aspect-Ratio T-shaped Gate Fabrication...

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2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Shuai Wang Gang Lin TangSheng Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016

A 0.15μm GaAs-based PHEMT process on 100ram wafers using 248nm stepper based technology for millimeter wave applications is *** process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15pro PHEMTs with high-aspect-ratio (≈4.5) gates are successfully fabricated using this process,exhibiting a good millimeter-wave performance with a fT of 82.7GHz and a power gain greater than 15dB at 12GHz.

关键词： Fabrication PHEMTs Millimeter wave technology Parasitic capacitance Throughput Cutoff frequency Passivation Lithography Filling Laboratories

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A compact transition structure integrated with DC feed filter for submillimeter wave application

A compact transition structure integrated with DC feed filte...

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2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007

作者： Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424410444

A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal orientation relative to the waveguide, and a sector suspended microstrip low pass filter is integrated for DC feed circuits, Broad bandwidth with low insert loss (

关键词： Low pass filters

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Ti/4H-SiC Schottky barrier diodes with field plate and B+ implantation edge termination technology

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第9期28卷 1333-1336页

作者： Chen, Gang Li, Zheyang Bai, Song Ren, Chunjiang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes (SBDs). The ideality factor n = 1.08 and effective Schottky barrier height ψ = 1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V). A low reverse leakage current below 5.96 × 10-3A/cm2 at a bias voltage of -1.1kV was obtained. By using B+ implantation, an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm2 at a forward voltage drop of about 4V. The specific on-resistance Ron was found to be 6.77mΩ · cm2.

关键词： Schottky barrier diodes

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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 1902-1911页

作者： Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB bandwidth of 10 GHz, with a small signal gain of around 9 dB. The post-stage distributed amplifier (DA) has a -3 dB bandwidth of close to 20 GHz, with a small signal gain of around 12 dB. As a whole, the cascade preamplifier has a measured small signal gain of 21.3 dB and a transimpedance of 55.3 dBΩ in a 50 n system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence is clear and symmetric.

关键词： Optical receivers

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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第1期28卷 24-30页

作者： Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain of 45 dBΩ. Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22 pA/√Hz, with an average value of 17.2 pA/√Hz. Having a timing jitter of 14 ps and eye amplitude of about 138 mV, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

关键词： Optical receivers

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monolithically integrated 850 nm optical receiver front end

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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年第3期27卷 350-355页

作者： Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China

An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal (MSM) photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm2 and 0.15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ;The front end has a relatively clear output eye diagram for the 850 nm optical signal modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.

关键词： Optical receivers

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5Gb/s monolithically integrated GaAs MSM/PHEMT 850nm optical receiver front end

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第4期28卷 587-591页

作者： Jiao, Shilong Chen, Tangsheng Qian, Feng Feng, Ou Jiang, Youquan Li, Fuxiao Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Lab. of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier. The photodetector has a photosensitive area and capacitance of 50μm × 50μm and 0.17pF, respectively, as well as a dark current of less than 17nA under a bias of 4V. The distributed amplifier has a - 3dB bandwidth close to 20GHz, with a transimpedance of 46dBΩ. In the range of 50MHz-16GHz, both the input and output voltage standing wave ratio are less than 2. The measured noise figure varies form 3.03 to 6.5dB. The output eye diagrams for 2.5Gb/s and 5Gb/s NRZ pseudorandom binary sequence are also obtained.

关键词： Optical receivers

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8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

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2006 8th International Conference on Solid-State and integrated Circuit technology

作者： Zhong Shichang Chen Tangsheng Lin Gang Li Fuxiao National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424401615

＜正＞This paper describes a new 19.2mm GaAs PHEMT chip with high gain,high power and high power-added *** which are packaged by internal-matching use one such FET that has been Jeveloped at *** 16.5GHz,the device has achieved power,gain,and power-added efficiency of 39.1dBm,6.1dB and 26.1%respectively at the ldB gain compression *** is first reported that high gain,PAE and output power combination have achieved by a single FET power amplifier at such high frequency.

关键词： Power amplifiers

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