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Silicone oil-based solar-thermal fluids dispersed with PDMS-modified Fe3O4@graphene hybrid nanoparticles

Progress in Natural science:Materials International 2018年第5期28卷 554-562页

作者： Peng Tao Lei Shu Jingyi Zhang Chiahsun Lee Qinxian Ye Huaixin Guo Tao Deng State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

One of the most challenging problems that limit the practical application of carbon-based photothermal nanofluids is their poor dispersion stability and tendency to form aggregation. Herein, by using Fe3O4@graphene hybrid nanoparticles as a model system, we proposed a new method to prepare stably dispersed silicone oilbased solar-thermal nanofluids that can operate at high temperatures than water-based fluids. The introduction of Fe3O4nanoparticles between graphene nanosheets not only physically increases the inter-plane distance of the graphene nanosheet but also provides numerous anchoring points for surface modification. Phosphate-terminated polydimethylsiloxane chains, which have high compatibility with the silicone oil base fluids and hightemperature stability, were synthesized and utilized to modify the Fe3O4nanoparticle surfaces. The attached chains create steric hindrance and effectively screen the strong inter-plane van der Waals attraction between graphene sheets. Dispersion stability of the nanofluids with different concentrations of surface-modified hybrid nanoparticles and heated under different temperatures was investigated. We have demonstrated that such fluids could maintain stable dispersion under a heating temperature up to 150 °C depending on the concentration of the hybrid nanoparticles. The resultant nanofluids maintained stable dispersion after repeated heating and were employed for consistent direct solar-thermal energy harvesting at 100 °C.

关键词： Silicone oil Graphene Nanofluid Dispersion Solar-thermal energy

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Efficient Schemes and Architectures for Check Node Update in Shuffled Min-Sum Decoding of LDPC Codes

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IEEE Transactions on circuits and Systems I: Regular Papers 2025年

作者： Luo, Lisha He, Xuan Du, Qin Han, Kaining Di, Zhixiong Tang, Xiaohu Southwest Jiaotong University Information Coding and Transmission Key Laboratory of Sichuan Province Chengdu 610031 China University of Electronic Science and Technology of China (UESTC) National Key Laboratory of Science and Technology on Communications Chengdu 610054 China Southwest Jiaotong University School of Integrated Circuits Science and Engineering Chengdu 610031 China

By dividing Variable Nodes (VNs) into groups and processing groups sequentially, the Shuffled Min-Sum (SMS) decoding of Low-Density Parity-Check (LDPC) codes achieves a good trade-off between hardware resource and throughput. However, under the grouping strategy where at least one Check Node (CN) has multiple VN neighbors in one group, the CN update of State-Of-The-Art (SOTA) SMS decoding has long latency and high complexity. To address the issue, this paper presents two efficient CN update schemes. The first one uses the first two minimum Variable-to-Check (V2C) message magnitudes in each group and a size-λ Monotone Double-ended Queue (λMDQ), leading to an Improved λMDQ (I-λMDQ) scheme. The second one called the Modified λMDQ (M-λMDQ) scheme uses only the minimum in each group. As a result, our schemes reduce the number of Selection modules (SMs) required by the CN update to only one. Simulation results show that both of our schemes have comparable error-correction performance to the SOTA schemes. Furthermore, we simplify the SM via a decomposition design and also present the detailed hardware architectures for our schemes. Analysis using the 90nm CMOS technology library shows that, compared to the SOTA schemes, our I-λMDQ scheme reduces the area and latency by up to 75% and 72%, respectively, while improving the throughput by up to 254%. Similarly, our M-λMDQ scheme reduces the area and latency by up to 79% and 70%, respectively, and improves the throughput by up to 229%. © 2004-2012 IEEE.

关键词： Check node update hardware implementation LDPC code monotone double-ended queue shuffled min-sum decoding

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Frequency stability of InP HBT over 0.2 to 220 GHz

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Journal of Semiconductors 2015年第2期36卷 77-81页

作者：周之蒋任坤刘军程伟陆海燕孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

关键词： double heterojunction bipolar transistor （DHBT） small-signal model stability factor

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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

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Journal of Semiconductors 2015年第9期36卷 54-57页

作者：黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.

关键词： 4H-SiC MOSFET interface state

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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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Chinese Physics B 2019年第2期28卷 400-405页

作者： Jin-Lan Li Yun Li Ling Wang Yue Xu Feng Yan Ping Han Xiao-Li Ji College of Electronic Science and Engineering Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Electronic Devices Institute College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications

In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLTS). Two Schottky barrier heights(SBHs) with different temperature dependences are found in Ni/4 H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_(1/2) and Ti(c)~a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)~a defect has a strong influence on the electrical and thermal properties of the 4 H-SiC Schottky diode.

关键词： 4H–SiC Schottky diodes Schottky barrier heights deep defects DLTS

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Research on TSV dry etching technology

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key Engineering Materials 2015年 645卷 216-220页

作者： Jiang, Guoqing Kuang, Lei Zhu, Jian Nanjing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP (inductively coupled plasma) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper. © (2015) Trans Tech Publications, Switzerland.

关键词： Three dimensional integrated circuits

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated. © 2010 IEEE.

关键词： Strontium titanates

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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Chinese Physics Letters 2015年第7期32卷 175-178页

作者：牛斌王元程伟谢自力陆海燕常龙谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

关键词： InP InGaAs Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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A high linearity X-band SOI CMOS digitally-controlled phase shifter

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Journal of Semiconductors 2015年第6期36卷 115-122页

作者：陈亮陈新宇张有涛李智群杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.

关键词： digitally-controlled phase shifter CMOS technology T/R module

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A design of C-band improved radial power combiner

A design of C-band improved radial power combiner

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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008

作者： Haifeng, Cheng Bin, Zhang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved radial power combiner worked at 5-6GHz which has the VSWRs of both input and output >1.7, the ports imbalance of the amplitude >±0.4, as well as the phase >±2 degrees, a high isolations, and also has a small size of 56mm diameter. The combiner is expected to reach an efficiency of near 90%. © 2008 IEEE.

关键词： Power amplifiers

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