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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China

ISBN: (纸本)9798350396829

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high d VSdt noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1μm GaN-on-Silicon process and measured results were performed to verify the characteristics. © 2023 IEEE.

关键词： Gallium nitride

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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A Real-time High Reliable Multi-chip Transmission technology 14

A Real-time High Reliable Multi-chip Transmission Technology

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14th International Workshop on Computer science and Engineering, WCSE 2024

作者： Gui, Jianghua Li, Bing Gao, Ying Wang, Mingjie School of Microelectronics Southeast University China School of Cyber Science and Engineering Southeast University China China Electronics Technology Group Corporation No.58 Research Institute China National Key Laboratory of Integrated Circuits and Microsystems China

ISBN: (纸本)9789819411566

In this paper, a LVDS parallel data re-calibration circuit for network interconnection on multi-chip is proposed. The operation states of the re-calibration circuit can be divided into four states: normal, empty, calibration and recovery. In each state, normal data packets that require cross chip transmission have different routing methods. During the operation of re-calibration circuit, normal data packets that need to be transmitted across chips can be routed to the destination bare chip through the bypass output channel using integrated routing algorithm. By using the ingenious isolation mechanism, not only normal data packets can be avoided to be lost, but also test data packets can be prevented from flowing into non calibrated circuit modules. So, it can ensure the normal operation of the integrated network. The re-calibration circuit proposed in this paper can enhance the reliability of multi-chip network interconnect system in real time, and has no significant impact on the system performance. © 2024 14th International Workshop on Computer science and Engineering, WCSE 2024. All rights reserved.

关键词： Calibration

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Functional GaN Heterogeneous integrated Substrate Based on Wafer Bonding and Smart-cut technology 8

Functional GaN Heterogeneous Integrated Substrate Based on W...

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8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024

作者： Ding, Jiaxin You, Tiangui Ou, Xin Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences National Key Laboratory of Materials for Integrated Circuits Shanghai200050 China University of Chinese Academy of Sciences The Center of Materials Science and Optoelectronics Engineering Beijing100049 China

ISBN: (纸本)9798331519919

This work focuses on the significant demand for breakthroughs and improvements in chip performance through the monolithic heterogeneous integration of GaN-based materials and devices with foreign substrates in the post-Moore era. It systematically conducts the fabrication of wafer-scale single-crystal GaN film and its heterogeneous integration by ion-cutting technology. © 2024 IEEE.

关键词： Single crystals

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Double-Sided Wearable Multifunctional Sensing System with Anti-interference Design for Human-Ambience Interface (vol 9, pg 14679, 2022)

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ACS NANO 2022年第12期16卷 21646-21646页

作者： Wang, Haobin Xiang, Zehua Zhao, Pengcheng Wan, Ji Miao, Liming Guo, Hang Xu, Chen Zhao, Wei Han, Mengdi Zhang, Haixia National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing Advanced Innovation Center for Integrated Circuits School of Integrated Circuits Peking University Beijing 100871 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China Department of Cardiology and Institute of Vascular Medicine Peking University Third Hospital NHC Key Laboratory of Cardiovascular Molecular Biology and Regulatory Peptides and Key Laboratory of Molecular Cardiovascular Science Ministry of Education Beijing Key Laboratory of Cardiovascular Receptors Research Beijing 100191 China Department of Biomedical Engineering College of Future Technology Peking University Beijing 100871 China

Multifunctional sensing systems play important roles in a variety of applications, incluing health surveillance, intelligent prothetics, human–machine/ambinece interfaces, and many others. The richness of the signal and the decoupling among multiple parameters are essential for simultaneous, multimodal measurements. However, current multifunctional sensing fails to decouple interferences from various signals. Here, we propose a double-sided wearable system that both enables multifunctional sensing and avoids the interferences among multiple parameters. Specifically, the sensitivities of system modules to strain are controlled through customizing the pattern and morphology of sensing electrodes as well as the modification of active materials. Compensation of temperature drift and selection of sensing mechanisms ensure the thermal stability of the system. The encapsulation of modules resists the interferences of proximity, normal pressure, and gas molecules at the same time. A double-sided partition layout with serpentine interconnections reduces the effect of motion artifacts and ensures simultaneous operation of electrochemical-sensing modules. Cooperation among decoupled modules acts as the bridge between the perception of ambience changes and the timely feedback of the human body. In addition, to sense the signal at the interface, modules for energy harvesting and storage are also integrated into the system to broaden its application scenarios.

关键词： laser-induced graphene multimodal sensing sensing-parameter decoupling sensing-signal coordination human−ambience interface

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Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power

Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the transition waveguides. To improve the power handling capabilities, a pair of GaN SBDs chips with six anodes in total is flip-chip mounted on the quartz circuit. The suspended microstrip line is employed in the circuit on quartz due to its low-attenuation characteristics at terahertz frequencies. To enhance the electrical performance of frequency doubler, low-loss transition structures are designed. The proposed frequency doubler shows a simulated output power of 300 mW with a conversion efficiency of 20% at 340 GHz.

关键词： Waveguide transitions Schottky diodes Filtering Schottky barriers Frequency conversion Scattering parameters Microstrip

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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Design of a RF Doherty Power Amplifier Based on Handset Application

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yujie Tang Yingjie Zhou Hao Zhou Lei Yang Yuan Zheng Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc.

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