咨询与建议

限定检索结果

文献类型

  • 98 篇 会议
  • 56 篇 期刊文献

馆藏范围

  • 154 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 109 篇 工学
    • 97 篇 电子科学与技术(可...
    • 62 篇 材料科学与工程(可...
    • 31 篇 化学工程与技术
    • 29 篇 电气工程
    • 13 篇 信息与通信工程
    • 12 篇 计算机科学与技术...
    • 8 篇 软件工程
    • 7 篇 光学工程
    • 6 篇 仪器科学与技术
    • 5 篇 动力工程及工程热...
    • 3 篇 机械工程
    • 2 篇 冶金工程
    • 1 篇 控制科学与工程
    • 1 篇 轻工技术与工程
    • 1 篇 生物医学工程(可授...
    • 1 篇 生物工程
    • 1 篇 网络空间安全
  • 50 篇 理学
    • 30 篇 物理学
    • 30 篇 化学
    • 6 篇 数学
    • 1 篇 地质学
    • 1 篇 生物学
    • 1 篇 统计学(可授理学、...
  • 3 篇 管理学
    • 3 篇 管理科学与工程(可...

主题

  • 17 篇 gallium nitride
  • 12 篇 power amplifiers
  • 7 篇 indium phosphide
  • 7 篇 hemts
  • 6 篇 gallium arsenide
  • 6 篇 radio frequency
  • 5 篇 phemts
  • 5 篇 modfets
  • 5 篇 silicon
  • 5 篇 mmics
  • 5 篇 schottky diodes
  • 4 篇 simulation
  • 4 篇 fabrication
  • 4 篇 voltage
  • 4 篇 optical receiver...
  • 4 篇 impedance matchi...
  • 4 篇 monolithic micro...
  • 4 篇 silicon carbide
  • 4 篇 millimeter wave ...
  • 4 篇 heterojunction b...

机构

  • 35 篇 science and tech...
  • 27 篇 science and tech...
  • 18 篇 nanjing electron...
  • 14 篇 national key lab...
  • 11 篇 nanjing guobo el...
  • 9 篇 state key labora...
  • 9 篇 college of integ...
  • 8 篇 national key lab...
  • 5 篇 science and tech...
  • 4 篇 national and loc...
  • 4 篇 nanjing electron...
  • 4 篇 national key lab...
  • 4 篇 school of optoel...
  • 4 篇 national key lab...
  • 4 篇 state key labora...
  • 4 篇 national key lab...
  • 3 篇 national asic sy...
  • 3 篇 fundamental scie...
  • 3 篇 center of materi...
  • 3 篇 key laboratory o...

作者

  • 18 篇 tangsheng chen
  • 14 篇 chen chen
  • 10 篇 yuechan kong
  • 10 篇 chen tangsheng
  • 8 篇 wei cheng
  • 8 篇 yi zhang
  • 7 篇 haiyan lu
  • 7 篇 jianjun zhou
  • 6 篇 陈堂胜
  • 6 篇 kai zhang
  • 6 篇 zhou jianjun
  • 6 篇 yufeng guo
  • 6 篇 孔月婵
  • 6 篇 youtao zhang
  • 5 篇 li fuxiao
  • 5 篇 bai song
  • 5 篇 bin niu
  • 5 篇 周建军
  • 5 篇 zhang yi
  • 4 篇 郁鑫鑫

语言

  • 143 篇 英文
  • 9 篇 中文
  • 2 篇 其他
检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
154 条 记 录,以下是21-30 订阅
排序:
Design and performance of a ku-band 6-Bit MMIC phase-shifter
Design and performance of a ku-band 6-Bit MMIC phase-shifter
收藏 引用
2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008
作者: Xiaofeng, Pan Ya, Shen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China
This paper describes design consideration and performance of a u band monolithic phase shifter utili ing .25 um HEMT switches. The de eloped bit phase shifter demonstrates an o erall phase de iation less than 1.5 rms ... 详细信息
来源: 评论
High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
收藏 引用
Journal of Semiconductors 2016年 第6期37卷 112-115页
作者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... 详细信息
来源: 评论
An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate
收藏 引用
Journal of Semiconductors 2018年 第5期39卷 54-58页
作者: Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China
This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain ... 详细信息
来源: 评论
A compact transition structure integrated with DC feed filter for submillimeter wave application
A compact transition structure integrated with DC feed filte...
收藏 引用
2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007
作者: Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal ... 详细信息
来源: 评论
Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)
收藏 引用
science China(Technological sciences) 2012年 第11期55卷 3200-3203页
作者: GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is ob... 详细信息
来源: 评论
100nm MHEMT transistor technology for W-band amplifier  3
100nm MHEMT transistor technology for W-band amplifier
收藏 引用
3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014
作者: Yaohui, Kang Weibo, Wang Jianfeng, Gao Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute NanJing China
In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHEMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip s... 详细信息
来源: 评论
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
收藏 引用
Chinese Physics B 2018年 第4期27卷 432-436页
作者: Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen Research Institution China Electronic Equipment & System Engineering Company Beijing 100039 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
We investigate the influence of fin architecture on linearity characteristics of AlGaN/*** is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as w... 详细信息
来源: 评论
The research on mm-wave power amplifier MMIC
The research on mm-wave power amplifier MMIC
收藏 引用
2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Zhang, Bin Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed a... 详细信息
来源: 评论
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...
收藏 引用
2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023
作者: Yan, Liwei Peng, Shuang Zhang, Kai Wang, Ziqiang Liu, Chenxi Yang, Fei Wves Southeast University State Key Laboratory of Millimeter Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo... 详细信息
来源: 评论
Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method
Investigation of millimeter-wave GaN HEMTs and a quick small...
收藏 引用
2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore
Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various ... 详细信息
来源: 评论