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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是21-30 订阅
排序:
Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System
Blind Calibration Algorithm for Time-interleaved Analog-to-D...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Ziqian Jiang Jie Xu Xiaopeng Li Youtao Zhang Changchun Zhang Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is car...
来源: 评论
6-inch GaN/Si CMOS 1P2M monolithic Heterogeneous Process and Platformed Devices  21
6-inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and...
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21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
作者: Du, Wen-Zhang He, Han-Zhao Fan, Wen-Qi Wang, Zhuang Yang, Xiao-Dong Liang, Jiao Zhang, Qing-Chun Ma, Hong-Ping Ma, Wang Yuan, Li Zhou, Jia-Wan Wang, Tao Cai, Shu-Jun Qian, Cheng Zhang, Guang-Sheng Fu, Xiao-Jun Zhou, Hong Li, Hai-Ou Yang, Hong-Qiang Cheng, Jun-Ji Li, Liang Huang, Wei Zhang, D.W. School of Microelectronics Fudan University Shanghai200433 China School of Academy for Engineering & Technology Fudan University Shanghai200433 China Genettice Co. LTD Qingdao266200 China National Key Laboratory of Integrated Circuits and Microsystems Wuxi214035 China National Key Laboratory of Integrated Circuits and Microsystems Chongqing400060 China School of Microelectronics Xidian University Xi'an710071 China Guilin University of Electronic Technology Guilin541004 China University of Electronic Science and Technology of China Chengdu610054 China School of Electronic Information Engineering Suzhou Vocational University Suzhou215104 China
To solve problems of parasitic effects in interconnects, low reliability, and three-dimensional stress associated with 3D heterogeneous and stacking of small chips, the complete process and model research of a 6-inch ... 详细信息
来源: 评论
Directly integrated mixed-dimensional van der Waals graphene/perovskite heterojunction for fast photodetection
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InfoMat 2022年 第8期4卷 82-92页
作者: Xiangshun Geng Peigen Zhang Jun Ren Guan-Hua Dun Yuanyuan Li Jialun Jin Chaolun Wang Xing Wu Dan Xie He Tian Yi Yang Tian-Ling Ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijingChina Shanghai Key Laboratory of Multidimensional Information Processing School of Communication and Electronic EngineeringEast China Normal UniversityShanghaiPeople's Republic of China
Mixed-dimensional(2D/3D)van der Waals(vdW)heterostructures made with complementary materials hold a lot of promise in the field of optoelectronic *** simple mechanical stacking,directly growing the single-crystal pero... 详细信息
来源: 评论
Process Development of Manifold Microchannels Cooling for Embedded Silicon Fan-Out (MMC-eSiFO) Package
Process Development of Manifold Microchannels Cooling for Em...
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Electronic Components and technology Conference (ECTC)
作者: Zhou Yang Yuchi Yang Peijue Lyu Jianyu Du Lang Chen Jin Kang Weihai Bu Kai Zheng Yikang Zhou Chi Zhang Wei Wang School of Integrated Circuits Peking University Beijing China Semiconductor Technology Innovation Center (Beijing) Corporation Beijing China School of Integrated Circuits Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China
As Moore’s Law tends to reach its limits, shrinking process technology nodes is no longer the most effective way to improve the performance of systems, and more attention is being focused on advanced packaging. Therm... 详细信息
来源: 评论
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
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Nanotechnology and Precision Engineering 2020年 第4期3卷 241-243页
作者: Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to ... 详细信息
来源: 评论
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...
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International Symposium on Power Semiconductor Devices and Ics (ISPSD)
作者: Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
来源: 评论
Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure
IEEE Electron Device Letters
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IEEE Electron Device Letters 2022年 1-1页
作者: Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China
A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss)... 详细信息
来源: 评论
Two-dimensional materials for future information technology: status and prospects
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science China(Information sciences) 2024年 第6期67卷 1-147页
作者: Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct
Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) ... 详细信息
来源: 评论
Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology
Design of A 0.5~50GHz Differential Distributed Amplifier Bas...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the... 详细信息
来源: 评论
System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator
System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were c... 详细信息
来源: 评论