检索结果-内蒙古大学图书馆

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Ziqian Jiang Jie Xu Xiaopeng Li Youtao Zhang Changchun Zhang Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average.

关键词：

来源：评论

学校读者我要写书评

暂无评论

6-inch GaN/Si CMOS 1P2M monolithic Heterogeneous Process and Platformed Devices 21

6-inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and...

引用

21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024

作者： Du, Wen-Zhang He, Han-Zhao Fan, Wen-Qi Wang, Zhuang Yang, Xiao-Dong Liang, Jiao Zhang, Qing-Chun Ma, Hong-Ping Ma, Wang Yuan, Li Zhou, Jia-Wan Wang, Tao Cai, Shu-Jun Qian, Cheng Zhang, Guang-Sheng Fu, Xiao-Jun Zhou, Hong Li, Hai-Ou Yang, Hong-Qiang Cheng, Jun-Ji Li, Liang Huang, Wei Zhang, D.W. School of Microelectronics Fudan University Shanghai200433 China School of Academy for Engineering & Technology Fudan University Shanghai200433 China Genettice Co. LTD Qingdao266200 China National Key Laboratory of Integrated Circuits and Microsystems Wuxi214035 China National Key Laboratory of Integrated Circuits and Microsystems Chongqing400060 China School of Microelectronics Xidian University Xi'an710071 China Guilin University of Electronic Technology Guilin541004 China University of Electronic Science and Technology of China Chengdu610054 China School of Electronic Information Engineering Suzhou Vocational University Suzhou215104 China

ISBN: (纸本)9798331541149

To solve problems of parasitic effects in interconnects, low reliability, and three-dimensional stress associated with 3D heterogeneous and stacking of small chips, the complete process and model research of a 6-inch 20V GaN/Si CMOS 1P2M/(111) Si monolithic heterogeneous integration in the paper is put forward at the first time. Innovations have been made in high-quality patterned selective epitaxy of GaN, compatibility of GaN/Si-based P-well CMOS processes, and platformed device design. This work has overcome several engineering challenges associated with the process integration of 6-inch Si CMOS IC and GaN IC chips, leading to the development of key devices such as (1) Si PMOS with a threshold voltage/current drive (VTH/IDS (forward)) of -0.7V, 2.5 mA/mm;(2) high-performance bulk silicon PN diodes with a forward voltage (VF) of about 0.72~0.79 V;(3) PNP and NPN silicon bipolar devices with β of approximately 260 and 300, respectively;(4) AlGaN/GaN HEMTs with VTH/IDS (forward) of -3V, 300-500 mA/mm. A prototype platform for heterogeneous integration processes, including Si CMOS and GaN processes, has been established. ©2024 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Directly integrated mixed-dimensional van der Waals graphene/perovskite heterojunction for fast photodetection

引用

InfoMat 2022年第8期4卷 82-92页

作者： Xiangshun Geng Peigen Zhang Jun Ren Guan-Hua Dun Yuanyuan Li Jialun Jin Chaolun Wang Xing Wu Dan Xie He Tian Yi Yang Tian-Ling Ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijingChina Shanghai Key Laboratory of Multidimensional Information Processing School of Communication and Electronic EngineeringEast China Normal UniversityShanghaiPeople's Republic of China

Mixed-dimensional(2D/3D)van der Waals(vdW)heterostructures made with complementary materials hold a lot of promise in the field of optoelectronic *** simple mechanical stacking,directly growing the single-crystal perovskite on 2D materials to construct a high-quality vdW heterojunction can better promote carrier *** this work,a monolithic integrated graphene/perovskite heterojunction device is fabricated by directly growing a single-crystal hybrid perovskite on monolayer *** to the strong inter-face coupling,the hybrid device achieves self-powering behavior and exhibits prominent photoresponse properties with a fast response speed of up to 2.05μ***,the responsivity and detectivity can be boosted to up to 10.41 A W1 and 4.65×10^(12)Jones under the actuation of3 V *** technique not only improves the device performance,but also provides an effective guideline for the development of next-generation directly integrated vdW optoelectronic devices.

关键词： CH_(3)NH_(3)PbBr_(3) graphene perovskite photodetectors van der Waals integration

来源：评论

学校读者我要写书评

暂无评论

Process Development of Manifold Microchannels Cooling for Embedded Silicon Fan-Out (MMC-eSiFO) Package

Process Development of Manifold Microchannels Cooling for Em...

引用

Electronic Components and technology Conference (ECTC)

作者： Zhou Yang Yuchi Yang Peijue Lyu Jianyu Du Lang Chen Jin Kang Weihai Bu Kai Zheng Yikang Zhou Chi Zhang Wei Wang School of Integrated Circuits Peking University Beijing China Semiconductor Technology Innovation Center (Beijing) Corporation Beijing China School of Integrated Circuits Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China

ISBN: (数字)9798350375985

ISBN: (纸本)9798350375992

As Moore’s Law tends to reach its limits, shrinking process technology nodes is no longer the most effective way to improve the performance of systems, and more attention is being focused on advanced packaging. Thermal dissipation as the main issue severely limits the reliability of 3D stacked modules. Embedded cooling is a feasible solution for interlayer cooling. However, the current manifold is incompatible with advanced packaging processes due to the footprint and manufacturing process. In this work, a manifold microfluidic cooling structure for embedded silicon Fan-Out (MMC-eSiFO) package is proposed and the thermal test vehicle (TTV) is designed, fabricated and tested. A silicon-based interposer is formed using a wafer bonding process by etching a cavity structure and a manifold channel on two silicon wafers, respectively. The large-area high-power chip is embedded into the cavity for effective cooling by the embedded microchannels. A high-density redistribution layer (RDL) is used to fan out the electrical I/O after fabricating the dielectric layer on the surface. In addition, multi-layer embedded liquid cooling of 3D package structure can be achieved by interposer with through silicon vias (TSVs). The use of a silicon-based interposer not only enables high aspect ratio TSVs and high-density RDL but also helps to reduce thermal stress in the package structure, as the interposer material is the same as the IC chip material. It is worth noting that the fabrication of the interposer and fan-out layer is wafer-level processing that enables production at scale. Multiple sets of cavities and manifold channels can be etched in a single package structure, making it compatible with chiplet technology. The package structure is expected to solve the thermal dissipation problem of multi-layer multi-chip assemblies.

关键词： Manifolds Fabrication Wafer bonding Three-dimensional displays Cooling Packaging Silicon

来源：评论

学校读者我要写书评

暂无评论

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

引用

Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

引用

International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2022年 1-1页

作者： Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China

A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

Two-dimensional materials for future information technology: status and prospects

引用

science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

来源：评论

学校读者我要写书评

暂无评论

Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers Microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

来源：评论

学校读者我要写书评

暂无评论

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.

关键词： Sigma-delta modulation Microwave integrated circuits Frequency modulation Simulation Bandwidth Millimeter wave integrated circuits integrated circuit modeling

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：