检索结果-内蒙古大学图书馆

2008 International Conference on Microwave and Millimeter Wave technology, ICMMT

作者： Shen, Yiming Peng, Longxin National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424418794

Image Reject Mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced schottky diode mixer using 90 hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods. ©2008 IEEE.

关键词： monolithic microwave integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

引用

2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings

引用

Chinese Physics B 2019年第10期28卷 198-203页

作者： Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the continuous-wave and pulse pumped four-wave mixing experiments to verify the dependence of conversion efficiency on the coupling conditions of the four interacting beams, respectively. Under the continuous-wave pump, the four-wave mixing efficiency gets maximized when both the pump and signal/idler beams are closely operated at the critical coupling point, while for the pulse pump case, the efficiency can be enhanced greatly when the pump and converted idler beams are all overcoupled. These experiment results agree well with our theoretical calculations. Our design provides a platform for explicitly characterizing the four-wave mixing under different pumping conditions, and offers a method to optimize the four-wave mixing, which will facilitate the development of on-chip all-optical signal processing with a higher efficiency or reduced pump power.

关键词： silicon resonators four-wave mixing Mach-Zehnder interferometer

来源：评论

学校读者我要写书评

暂无评论

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

引用

Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

W-band AlGaN/GaN MMIC PA with 3.1W output power 14

W-band AlGaN/GaN MMIC PA with 3.1W output power

引用

14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China

ISBN: (纸本)9781538648513

A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a small signal gain of greater than 18 dB and an output power of greater than 2.5W from 88GHz to 93GHz with an associated power gain of greater than 15 dB. Moreover, it achieves a peak output power of 3.1W (34.9dBm) at 91GHz in continuous-wave mode, with an associated power density of 3.23W/mm. Most notably, it is the first time that the peak output power and power density exceed 3W and 3W/mm in AlGaN/GaN HEMT at W-band simultaneously. © 2017 IEEE.

关键词： Electron beam lithography

来源：评论

学校读者我要写书评

暂无评论

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

引用

Chinese Physics B 2019年第6期28卷 105-109页

作者： Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词： GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

来源：评论

学校读者我要写书评

暂无评论

Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

引用

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

来源：评论

学校读者我要写书评

暂无评论

Influence of silicon cluster on epitaxial growth of silicon carbide

引用

science China(Physics,Mechanics & Astronomy) 2011年第9期54卷 1579-1582页

作者： LI ZheYang LI Yun CHEN Chen HAN Pin Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China National Key Laboratory of Monolithic Integrated Circuits and Modules the 55th Research Institute of CETC Nanjing 210016 China

Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.

关键词： 4H-SiC horizontal hot-wall CVD C/Si ratio growth rate doping concentration silicon cluster

来源：评论

学校读者我要写书评

暂无评论

A micro transfer-printer for high-accuracy optoelectronic and photonic integration 16

A micro transfer-printer for high-accuracy optoelectronic an...

引用

16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022

作者： Wang, Yuxuan Li, Guanyu Kong, Yuchang Zheng, Youdou Shi, Yi Nanjing University School of Electronic Science and Engineering Nanjing210093 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210000 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose a micro transfer-printer (μ-TPer) designing for high-accuracy optoelectronic and photonic integration. The used μ-TPer equips a multi-axis movement stage and visual-recognizing system, which recognizes the alignment marks and operates the aligning actions precisely. To employ this μ-TPer, a basic photonic integrated circuit of InP PD onto silicon microring resonator are realized, where the misalignment less than 1 μm can be obtained optimally. This equipment enables a powerful manufacturing route for the various optoelectronic and photonic integrations. © 2022 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

引用

9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：