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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
154 条 记 录,以下是31-40 订阅
排序:
Approaches for improving LO-RF isolation of MMIC 90-hybrid-IRM
Approaches for improving LO-RF isolation of MMIC 90-hybrid-I...
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2008 International Conference on Microwave and Millimeter Wave technology, ICMMT
作者: Shen, Yiming Peng, Longxin National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China
Image Reject Mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced schottky diode mixer using 90 hybrid. It's widely used in many engineering areas. T... 详细信息
来源: 评论
Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode
Simulation, fabrication and characterization of 6500V 4H-SiC...
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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013
作者: Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of ... 详细信息
来源: 评论
Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings
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Chinese Physics B 2019年 第10期28卷 198-203页
作者: Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the con... 详细信息
来源: 评论
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
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Nanotechnology and Precision Engineering 2020年 第4期3卷 241-243页
作者: Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to ... 详细信息
来源: 评论
W-band AlGaN/GaN MMIC PA with 3.1W output power  14
W-band AlGaN/GaN MMIC PA with 3.1W output power
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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
作者: Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China
A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure wi... 详细信息
来源: 评论
Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
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Chinese Physics B 2019年 第6期28卷 105-109页
作者: Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire... 详细信息
来源: 评论
Millimeter-wave design and fabrication of GaAs micromachined patch antenna
Millimeter-wave design and fabrication of GaAs micromachined...
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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective diele... 详细信息
来源: 评论
Influence of silicon cluster on epitaxial growth of silicon carbide
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science China(Physics,Mechanics & Astronomy) 2011年 第9期54卷 1579-1582页
作者: LI ZheYang LI Yun CHEN Chen HAN Pin Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China National Key Laboratory of Monolithic Integrated Circuits and Modules the 55th Research Institute of CETC Nanjing 210016 China
Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC(0001) epilayers with horizontal hot-wall CVD system using vari... 详细信息
来源: 评论
A micro transfer-printer for high-accuracy optoelectronic and photonic integration  16
A micro transfer-printer for high-accuracy optoelectronic an...
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16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022
作者: Wang, Yuxuan Li, Guanyu Kong, Yuchang Zheng, Youdou Shi, Yi Nanjing University School of Electronic Science and Engineering Nanjing210093 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210000 China
A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose ... 详细信息
来源: 评论
Design of a novel S-band broadband CW self-biased GaN power amplifier for communication  2021
Design of a novel S-band broadband CW self-biased GaN power ...
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9th International Conference on Communications and Broadband Networking, ICCBN 2021
作者: Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China
In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adop... 详细信息
来源: 评论