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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是61-70 订阅
排序:
CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides
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Chinese Optics Letters 2019年 第6期17卷 36-40页
作者: Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China
In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** ... 详细信息
来源: 评论
Efficient immersion cooling for electronic devices based on multi-physics field coupling
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International Journal of Thermal sciences 2025年 215卷
作者: Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou215009 China School of Energy and Environment Southeast University Jiangsu Nanjing210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei230031 China
Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfe... 详细信息
来源: 评论
Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System  15
Blind Calibration Algorithm for Time-interleaved Analog-to-D...
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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023
作者: Jiang, Ziqian Xu, Jie Li, Xiaopeng Zhang, Youtao Zhang, Changchun Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is car... 详细信息
来源: 评论
InAlN/AlN/GaN HEMTs on sapphire substrate
InAlN/AlN/GaN HEMTs on sapphire substrate
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this... 详细信息
来源: 评论
Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging  21
Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...
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21st International Conference on Electronic Packaging technology, ICEPT 2020
作者: Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China
A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fab... 详细信息
来源: 评论
Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs
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Micromachines 2020年 第1期11卷 76-76页
作者: Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility... 详细信息
来源: 评论
14 W X-band AlGaN/GaN HEMT power MMICs
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年 第6期29卷 1027-1030页
作者: Chen, Tangsheng Zhang, Bin Ren, Chunjiang Jiao, Gang Zheng, Weibin Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
The development of an AlGaN/GaN HEMT power MMIC on Sl-SiC designed in microstrip technology is presented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN... 详细信息
来源: 评论
Ti/4H-SiC Schottky barrier diodes with field plate and B+ implantation edge termination technology
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第9期28卷 1333-1336页
作者: Chen, Gang Li, Zheyang Bai, Song Ren, Chunjiang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes (SBDs). The ideality factor n = 1.08 and effective Schottky barrier height ψ = 1.05eV of the SBDs were measured... 详细信息
来源: 评论
Study on 2000V SiC JBS Diodes
Study on 2000V SiC JBS Diodes
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2013 3rd International Conference on Electric and Electronics(EEIC 2013)
作者: Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo... 详细信息
来源: 评论
Approaches for improving LO-RF isolation of MMIC 90°-hybrid-IRM
Approaches for improving LO-RF isolation of MMIC 90°-hybrid...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yiming Shen Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute China
Image reject mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced Schottky diode mixer using 90deg hybrid. It's widely used in many engineering areas... 详细信息
来源: 评论