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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是61-70 订阅
排序:
PbS Quantum Dot Image Sensors Derived from Spent Lead-Acid Batteries Via an Environmentally Friendly Route
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Engineering 2024年
作者: Yuxin Tong Dijie Zhang Zhaoyang Li Guang Hu Qingfang Zou Luna Xiao Weidong Wu Liang Huang Sha Liang Huabo Duan Jingping Hu Huijie Hou Jianbing Zhang Jiakuan Yang Hubei Key Laboratory of Multi-media Pollution Cooperative Control in Yangtze Basin School of Environmental Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 China Hubei Provincial Engineering Laboratory of Solid Waste Treatment Disposal and Recycling Wuhan 430074 China School of Integrated Circuits Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology (HUST) Wuhan 430074 China State Key Laboratory of Coal Combustion Huazhong University of Science and Technology (HUST) Wuhan 430074 China
PbS quantum dot (QD) image sensors have emerged as promising chips for a wide range of infrared (IR) imaging applications due to their monolithic integration with silicon-based readout integrated circuits. However, av... 详细信息
来源: 评论
12-bit 2.6 GS/s RF DAC based on return-to-zero technology
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The Journal of China Universities of Posts and Telecommunications 2019年 第4期26卷 36-42页
作者: Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China
A 12-bit 2.6 GS/s radio frequency digital to analog converter(RF DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,whic... 详细信息
来源: 评论
A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT
A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT
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International Conference on integrated circuits and Microsystems (ICICM)
作者: Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instrumen...
来源: 评论
A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V
IEEE Electron Device Letters
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IEEE Electron Device Letters 2018年 第10期39卷 1548-1551页
作者: Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-pla... 详细信息
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W-band AlGaN/GaN MMIC PA with 3.1W output power  14
W-band AlGaN/GaN MMIC PA with 3.1W output power
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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
作者: Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China
A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure wi... 详细信息
来源: 评论
Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors
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Physical Review B 2019年 第4期100卷 045417-045417页
作者: Xiaodi Xue Laipan Zhu Wei Huang Xavier Marie Pierre Renucci Yu Liu Yang Zhang Xiaolin Zeng Jing Wu Bo Xu Zhanguo Wang Yonghai Chen Weifeng Zhang Yuan Lu Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China Henan Key Laboratory of Photovoltaic Materials Laboratory of Low-Dimensional Materials ScienceSchool of Physics & Electronics Henan University Kaifeng 475004 China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China Université de Toulouse INSA-CNRS-UPS LPCNO135 Avenue de Rangueil F-31077 Toulouse France Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Université de Lorraine Institut Jean Lamour UMR CNRS 7198 campus ARTEM 2 Allée André Guinier 54011 Nancy France
We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with ci... 详细信息
来源: 评论
Research on failure analysis and method of GaN-based HEMTs  14
Research on failure analysis and method of GaN-based HEMTs
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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
作者: Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect ... 详细信息
来源: 评论
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
arXiv
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arXiv 2019年
作者: Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics t... 详细信息
来源: 评论
A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP DHBT technology  14
A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP...
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14th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2018
作者: Li, Xiaopeng Wang, Zhigong Zhang, Yi Zhang, Youtao Zhang, Min Institute of RF - OE ICs Southeast University Nanjing210096 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Nanjing Electronic Devices Institute Nanjing210016 China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210046 China State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing210016 China
In this paper, an ultra-high-speed ultra-wide-bandwidth one-bit analog-to-digital converter (ADC) is implemented. The chip uses a latched high-sensitivity comparator to achieve one-bit quantization, and an integrated ... 详细信息
来源: 评论
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
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Chinese Physics B 2016年 第5期25卷 448-452页
作者: 李欧鹏 张勇 徐锐敏 程伟 王元 牛斌 陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju... 详细信息
来源: 评论