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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
154 条 记 录,以下是71-80 订阅
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Approaches for improving LO-RF isolation of MMIC 90°-hybrid-IRM
Approaches for improving LO-RF isolation of MMIC 90°-hybrid...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yiming Shen Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute China
Image reject mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced Schottky diode mixer using 90deg hybrid. It's widely used in many engineering areas... 详细信息
来源: 评论
A design of multiport waveguide power combiner
A design of multiport waveguide power combiner
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International Conference on Solid-State and integrated Circuit technology
作者: Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Devices Institute China
A method of X-band power combining using rectangular waveguide is proposed and studied in this paper. Waveguide combiner has good efficiency, which is suitable for power combining at higher frequencies and higher powe... 详细信息
来源: 评论
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constan... 详细信息
来源: 评论
A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emitters
A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emi...
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2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)
作者: Yan Zhao Zheng Zhang Jianfeng Gao National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016
InP/InGaAs/lnP double heteroj unction bipolar transistors(DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1×10μm have demonstrated a p... 详细信息
来源: 评论
X-Band microstrip AlGaN/GaN HEMT Power MMICs
X-Band microstrip AlGaN/GaN HEMT Power MMICs
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2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008
作者: Tangsheng, Chen Bin, Zhang Chunjiang, Ren Gang, Jiao Weibin, Zheng Chen, Chen Kai, Shao Naibin, Yang National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 China Nanjing Electronic Devices Institute P.O.Box 1601 Nanjing 210016 China
X-Band AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented in this paper Recessed-gate and tield-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-param... 详细信息
来源: 评论
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...
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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)
作者: Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U
The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line s... 详细信息
来源: 评论
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmet... 详细信息
来源: 评论
Design of a RF Doherty Power Amplifier Based on Handset Application  15
Design of a RF Doherty Power Amplifier Based on Handset Appl...
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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023
作者: Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China
A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/G... 详细信息
来源: 评论
Study on Fabrication and Fast Switching of High Voltage SiC JFET
Study on Fabrication and Fast Switching of High Voltage SiC ...
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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)
作者: Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate... 详细信息
来源: 评论
Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors
Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achie...
来源: 评论