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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
153 条 记 录,以下是71-80 订阅
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Research of temporary bonding for 3D integrational Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi J Wu K Q Qian J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the ke...
来源: 评论
High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
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Journal of Semiconductors 2016年 第6期37卷 112-115页
作者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... 详细信息
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An artificial neural network based nonlinear behavioral model for RF power transistors
An artificial neural network based nonlinear behavioral mode...
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Asia-Pacific Conference on Microwave
作者: Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algor... 详细信息
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Hybrid and integrated schottky diode based 330GHz and 420GHz subharmonic mixers
Hybrid and integrated schottky diode based 330GHz and 420GHz...
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2017 International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2017
作者: Zhang, Bo Liu, Ge Zhang, Lisen Xing, Dong Wang, Junlong Fan, Yong School of Electronic Engineering Universtity of Electronic Science and Technology of China Chengdu Sichuan611731 China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute Shijiazhuang050000 China
This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF key laboratory of Fundamental science of Universtity of Electronic science and technology of China. Hybrid a... 详细信息
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Hybrid and integrated Schottky diode based 330GHz and 420GHz subharmonic mixers
Hybrid and integrated Schottky diode based 330GHz and 420GHz...
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International Applied Computational Electromagnetics Society Symposium in China
作者: Bo Zhang Ge Liu Lisen Zhang Dong Xing Junlong Wang Yong Fan School of Electronic Engineering Universtity of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute
This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF key laboratory of Fundamental science of Universtity of Electronic science and technology of China. Hybrid a... 详细信息
来源: 评论
Structure and Strain Properties of GaN Films Grown on Si(111) Substrates with AlxGa1-xN/AlyGa1-yN Superlattices
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Chinese Physics Letters 2015年 第5期32卷 153-156页
作者: 潘磊 倪金玉 郁鑫鑫 董逊 彭大青 李传皓 李忠辉 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are stu... 详细信息
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Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator
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Journal of Semiconductors 2015年 第9期36卷 62-65页
作者: 王哲力 周建军 孔月婵 孔岑 董逊 杨洋 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal-insulator- semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al0.3Ga0... 详细信息
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Frequency stability of InP HBT over 0.2 to 220 GHz
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Journal of Semiconductors 2015年 第2期36卷 77-81页
作者: 周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute
The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extra... 详细信息
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Design and fabrication of a 3.3 kV 4H-SiC MOSFET
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Journal of Semiconductors 2015年 第9期36卷 54-57页
作者: 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟 赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structu... 详细信息
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Research on TSV dry etching technology
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key Engineering Materials 2015年 645卷 216-220页
作者: Jiang, Guoqing Kuang, Lei Zhu, Jian Nanjing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China
TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP (inductively coupled plasma) dry etching to make TSV is discussed in this paper. Starting... 详细信息
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