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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"

共 153 条记录，以下是71-80 订阅

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A design of multiport waveguide power combiner

A design of multiport waveguide power combiner

引用

International Conference on Solid-State and integrated Circuit technology

作者： Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

A method of X-band power combining using rectangular waveguide is proposed and studied in this paper. Waveguide combiner has good efficiency, which is suitable for power combining at higher frequencies and higher power levels especially. We fabricated the waveguide combiner by accurate process, and VSWR<1.2, Loss<0.2 dB over 600M bandwidth with combining efficiency of 95% at center frequency is achieved. Measured results show a good agreement with simulated ones.

关键词： Power combiners Electromagnetic waveguides Planar waveguides Frequency High power amplifiers Impedance matching Insertion loss Rectangular waveguides Degradation Power system reliability

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

引用

2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transcooductance 200 mS/mm was obtained with lum gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.

关键词： Gallium nitride HEMTs Dielectrics and electrical insulation Dielectric materials Metal-insulator structures High-K gate dielectrics Binary search trees Chemical vapor deposition MOCVD Inorganic materials

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A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emitters

A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emi...

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2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Yan Zhao Zheng Zhang Jianfeng Gao National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016

InP/InGaAs/lnP double heteroj unction bipolar transistors(DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1×10μm have demonstrated a p... 详细信息

关键词： Indium phosphide Indium gallium arsenide Etching DH-HEMTs Resists Heterojunction bipolar transistors Differential amplifiers Optical amplifiers High power amplifiers Low-noise amplifiers

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X-Band microstrip AlGaN/GaN HEMT Power MMICs

X-Band microstrip AlGaN/GaN HEMT Power MMICs

引用

2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008

作者： Tangsheng, Chen Bin, Zhang Chunjiang, Ren Gang, Jiao Weibin, Zheng Chen, Chen Kai, Shao Naibin, Yang National Key Laboratory of Monolithic Integrated Circuits and Modules P.O.Box 1601 Nanjing 210016 China Nanjing Electronic Devices Institute P.O.Box 1601 Nanjing 210016 China

ISBN: (纸本)9781424419401

X-Band AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented in this paper Recessed-gate and tield-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-parameter measurements show a strong dependence of the frequency performances of the AlGaN/GaN HEMTs on the operating voltage. Higher operating voltage is key to get higher power gain for the AlGaN/GaN HEMTs. The developed 2-stage power MMIC delivers a pulsed output power in excess of 10W at a drain bias of 30V with a power gain of more than 12dB over the band of 9-llGHz. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a power-added-efflciency (PAE) of 23%. The MMIC chip size is only ***. This work shows superiority over reported results of X-band AlGaN/GaN HEMT power MMICs up to date in output power per millimeter gate width and output power per unit chip size. © 2008 IEEE.

关键词： monolithic microwave integrated circuits

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.

关键词： Lithography Logic gates Gallium nitride Resists HEMTs Microwave circuits Chemicals

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Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...

引用

2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into selfconsistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 uC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment.

关键词： Polarization Aluminum gallium nitride Gallium nitride Ferroelectric materials Capacitance-voltage characteristics Voltage integrated circuit technology Buffer layers Electric variables measurement Performance evaluation

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Design of a RF Doherty Power Amplifier Based on Handset Application 15

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China

ISBN: (纸本)9798350338874

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc. © 2023 IEEE.

关键词： Efficiency

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Study on Fabrication and Fast Switching of High Voltage SiC JFET

Study on Fabrication and Fast Switching of High Voltage SiC ...

引用

2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz.

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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