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检索条件"机构=National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules"
154 条 记 录,以下是81-90 订阅
排序:
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
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IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology  14
A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...
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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022
作者: Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
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A technology-independent table-based model for advanced GaN Schottky barrier diodes
A technology-independent table-based model for advanced GaN ...
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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)
作者: Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore
In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmi... 详细信息
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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...
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International Symposium on Antennas and Propagation (ISAP)
作者: Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo...
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Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter
Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter
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2008 9th International Conference on Solid-State and integrated-Circuit technology
作者: Pan Xiaofeng Shen Ya National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China
This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing 0.25-um PHEMT *** developed 6-bit phase shifter demonstrates an overall phase deviation less than 1.5 rnis and ... 详细信息
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Through-silicon via technologies for interconnects in RF MEMS
Through-silicon via technologies for interconnects in RF MEM...
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Design, Test, Integration and Packaging of MEMS/MOEMS
作者: Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China
Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is de... 详细信息
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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs
A Simple Method to Accurately Determine the Temperature Depe...
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2012 IEEE 11th International Conference on Solid-State and integrated Circuit technology(ICSICT-2012)
作者: Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors(HBTs)on ambient and junction temperatures is presented.A nonlinear model of the therma... 详细信息
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A Design of C-Band Improved Radial Power Combiner
A Design of C-Band Improved Radial Power Combiner
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2008 9th International Conference on Solid-State and integrated-Circuit technology
作者: CHENG Haifeng ZHANG bin National Key Laboratory of Monolithic Integrated circuits & modules Nanjing Electronic Devices InstituteP.R.China
This paper shows a design of improved radial power combiner used for combining a large number of MMIC power *** analyzed the characteristics of the MMIC power amplifiers,and developed a 16 way improved radial power co... 详细信息
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A Design of Multiport Waveguide Power Combiner
A Design of Multiport Waveguide Power Combiner
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2008 9th International Conference on Solid-State and integrated-Circuit technology
作者: Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China
A method of X-band power combining using rectangular waveguide is proposed and studied in this *** combiner has good efficiency,which is suitable for power combining at higher frequencies and higher power levels espec... 详细信息
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Double-Sided Wearable Multifunctional Sensing System with Anti-interference Design for Human-Ambience Interface (vol 9, pg 14679, 2022)
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ACS NANO 2022年 第12期16卷 21646-21646页
作者: Wang, Haobin Xiang, Zehua Zhao, Pengcheng Wan, Ji Miao, Liming Guo, Hang Xu, Chen Zhao, Wei Han, Mengdi Zhang, Haixia National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing Advanced Innovation Center for Integrated Circuits School of Integrated Circuits Peking University Beijing 100871 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China Department of Cardiology and Institute of Vascular Medicine Peking University Third Hospital NHC Key Laboratory of Cardiovascular Molecular Biology and Regulatory Peptides and Key Laboratory of Molecular Cardiovascular Science Ministry of Education Beijing Key Laboratory of Cardiovascular Receptors Research Beijing 100191 China Department of Biomedical Engineering College of Future Technology Peking University Beijing 100871 China
Multifunctional sensing systems play important roles in a variety of applications, incluing health surveillance, intelligent prothetics, human–machine/ambinece interfaces, and many others. The richness of the signal ... 详细信息
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