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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

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International Symposium on Antennas and Propagation (ISAP)

作者： Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm 2 .

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Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： Pan Xiaofeng Shen Ya National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China

This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing 0.25-um PHEMT *** developed 6-bit phase shifter demonstrates an overall phase deviation less than 1.5 rnis and an insertion loss variation less than 0.35 dB rms from 12 to 15 *** all 64 states,the insertion loss is measured to be 9 dB and the VSWR is less than 1.4. The chip size of the monolithic phase shifter is 3.1 mm X 1mm.

关键词： PHEMT Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

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Through-silicon via technologies for interconnects in RF MEMS

Through-silicon via technologies for interconnects in RF MEM...

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Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China

Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 mm times mm. Using it as interconnections for 3-dimentional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. After measurement it exhibits an insertion loss of less than 3.5 dB from 26.5 GHz to 34 GHz and an amplitude variation of less than 2 dB. The total size of the chip is 6.3 mm times 3.2 mm.

关键词： Radiofrequency microelectromechanical systems Through-silicon vias integrated circuit interconnections Plasma measurements integrated circuit technology Millimeter wave technology Loss measurement Semiconductor device measurement integrated circuit measurements Insertion loss

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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs

A Simple Method to Accurately Determine the Temperature Depe...

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2012 IEEE 11th International Conference on Solid-State and integrated Circuit technology(ICSICT-2012)

作者： Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467324748

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors（HBTs）on ambient and junction temperatures is presented.A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature *** method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2,fabricated with an in-house InP HBT technology.

关键词： Heterojunction Bipolar Transistor thermal resistance model extraction

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A Design of C-Band Improved Radial Power Combiner

A Design of C-Band Improved Radial Power Combiner

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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： CHENG Haifeng ZHANG bin National Key Laboratory of Monolithic Integrated circuits & modules Nanjing Electronic Devices InstituteP.R.China

This paper shows a design of improved radial power combiner used for combining a large number of MMIC power *** analyzed the characteristics of the MMIC power amplifiers,and developed a 16 way improved radial power combiner worked at 5-6GHz which has the VSWRs of both input and output <1.7,tiie ports imbalance of the amplitude <±0.4,as well as the phase <±2 degrees,a high isolations,and also has a small size of 56mm *** combiner is expected to reach an efficiency of near 90%.

关键词： A Design of C-Band Improved Radial Power Combiner

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Double-Sided Wearable Multifunctional Sensing System with Anti-interference Design for Human-Ambience Interface (vol 9, pg 14679, 2022)

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ACS NANO 2022年第12期16卷 21646-21646页

作者： Wang, Haobin Xiang, Zehua Zhao, Pengcheng Wan, Ji Miao, Liming Guo, Hang Xu, Chen Zhao, Wei Han, Mengdi Zhang, Haixia National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing Advanced Innovation Center for Integrated Circuits School of Integrated Circuits Peking University Beijing 100871 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China Department of Cardiology and Institute of Vascular Medicine Peking University Third Hospital NHC Key Laboratory of Cardiovascular Molecular Biology and Regulatory Peptides and Key Laboratory of Molecular Cardiovascular Science Ministry of Education Beijing Key Laboratory of Cardiovascular Receptors Research Beijing 100191 China Department of Biomedical Engineering College of Future Technology Peking University Beijing 100871 China

Multifunctional sensing systems play important roles in a variety of applications, incluing health surveillance, intelligent prothetics, human–machine/ambinece interfaces, and many others. The richness of the signal and the decoupling among multiple parameters are essential for simultaneous, multimodal measurements. However, current multifunctional sensing fails to decouple interferences from various signals. Here, we propose a double-sided wearable system that both enables multifunctional sensing and avoids the interferences among multiple parameters. Specifically, the sensitivities of system modules to strain are controlled through customizing the pattern and morphology of sensing electrodes as well as the modification of active materials. Compensation of temperature drift and selection of sensing mechanisms ensure the thermal stability of the system. The encapsulation of modules resists the interferences of proximity, normal pressure, and gas molecules at the same time. A double-sided partition layout with serpentine interconnections reduces the effect of motion artifacts and ensures simultaneous operation of electrochemical-sensing modules. Cooperation among decoupled modules acts as the bridge between the perception of ambience changes and the timely feedback of the human body. In addition, to sense the signal at the interface, modules for energy harvesting and storage are also integrated into the system to broaden its application scenarios.

关键词： laser-induced graphene multimodal sensing sensing-parameter decoupling sensing-signal coordination human−ambience interface

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A Design of Multiport Waveguide Power Combiner

A Design of Multiport Waveguide Power Combiner

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2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China

A method of X-band power combining using rectangular waveguide is proposed and studied in this *** combiner has good efficiency,which is suitable for power combining at higher frequencies and higher power levels especially. We fabricated the waveguide combiner by accurate process,and VSWR<1.2,Loss<0.2dB over 600M bandwidth with combining efficiency of 95%at center frequency is *** results show a good agreement with simulated ones.

关键词： Power Combiner Power Divider Waveguide

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Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model 4

Multiple transient photocurrents coupled simulation based on...

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4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

作者： Li, Yang Wei, Jianan He, Chaohui Yang, Weitao Li, Yonghong Guo, Yaxin School of Nuclear Science and Technology Xi’an Jiaotong University Xi’an China National Key Laboratory of Analog Integrated Circuits Chongqing China

ISBN: (纸本)9781665441681

AD8561 (Analog Device Inc.) MACRO-SPICE model is used to investigate the coupled effects of multiple photocurrents generated by gamma pulse radiation in its Input and Output modules. Firstly, the test circuit is built to find sensitive devices according to previous studies. Besides, Gummel-Poon bipolar junction transistor (BJT) model including photocurrent generators implemented by the exponential current sources is adopted to replace the initial device model. Finally, the effects caused by each photocurrent and multiple photocurrents under different input states are simulated and analyzed. The simulation results indicate that there are competitive relationships among the multiple photocurrents generated in the input-stage bipolar transistors, even in a single bipolar transistor, and the relationship changes with the input state. The transient upset induced by photocurrents generated in the Input and Output modules have superimposed effects on the output ports, but the transient upset duration depends mainly on the Input module. © 2021 IEEE

关键词： Radiation effects

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