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Stretchable organic electrochemical transistors for sustained high-fidelity electrophysiology and deep learning-assisted sleep monitoring

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Matter 2025年第5期8卷

作者： Pang, Yuncong Li, Yang Gu, Yuzhe Xu, Benfei Zhu, Zihan Wang, Xiaotian Liao, Yuan Huang, Liya Zhao, Qiang State Key Laboratory of Flexible Electronics Nanjing University of Posts & Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210003 China

Good-quality sleep is essential for health, yet obstructive sleep apnea (OSA) underscores the limitations of traditional polysomnography, which is costly, complex, and often uncomfortable. Organic electrochemical transistors (OECTs) offer a promising solution for sleep monitoring due to their high transconductance;however, limitations in stretchability, long-term stability, and intelligent data analysis hinder their broader application. Here, a high-performance stretchable OECT that combines a biocompatible ionic liquid-modified conducting polymer channel with an ionogel electrolyte is developed, addressing the trade-off between performance and wearability. This OECT achieves exceptional transconductance (∼2.1 mS), mechanical resilience (30% strain), and long-term stability (>6 months), enabling high-fidelity electrocardiography (ECG) monitoring with a signal-to-noise ratio (SNR) of 35.7 dB. Through the integration of circuit boards and deep learning algorithms, we have established a wearable, stable, and highly accurate wireless system capable of detecting OSA events from single-lead ECG signals, presenting a novel approach for reliable and portable sleep monitoring. © 2025 Elsevier Inc.

关键词： Conducting polymers

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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High-performance self-powered GaN/PEDOT:PSS hybrid heterojunction UV photodetector for optical communication

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Science China(Technological Sciences) 2024年第2期67卷 608-615页

作者： LI Shan LIU Zeng ZHANG MaoLin YANG LiLi GUO YuFeng TANG WeiHua College of Integrated Circuit Science and Engineering&National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous ***,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating *** from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection *** as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication *** results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.

关键词： GaN UV photodetector self-powered heterojunction optical communication

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Corrigendum to ‘Mist CVD technology for gallium oxide deposition: A review’ [Mater. Today Phys. 49(2024) 101604]

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Materials Today Physics 2025年 50卷

作者： Suhao Yao Yifan Yao Maolin Zhang Xueqiang Ji Shan Li Weihua Tang Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China

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Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells

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Chinese Journal of Electronics 2018年第6期27卷 1158-1162页

作者： ZHANG Ying LI Zeyou YANG Hua GENG Xiao ZHANG Yi College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

A non-uniform Distributed power amplifier(DPA) is designed and implemented in a 0.18μm CMOS technology. The gradual changed gain cells work with the tapered on-chip inductors to construct non-uniform artificial transmission lines, which improves the output power and efficiency in a wide frequency band while maintaining good input and output impedance matching. The proposed DPA achieves 9 dB average associated gain from 1 to 17.2 GHz, and the input return loss is less than--9 dB while the output return loss is less than-8.5 dB in the desired frequency band. The output power at 1 dB Output compression point(OP1 dB) is more than 7.8 dBm in the frequency band of 2-16 GHz, and the peak power-added efficiency is 6.2% with the OP1 dB12.6 dBm at 4 GHz.

关键词： Distributed amplifier Impedance matching Power added efficiency Artificial transmission line

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Comparison of the three dimensional effect of multi-finger layout in VLD/VLT/RESUrf LDMOS 13

Comparison of the three dimensional effect of multi-finger l...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Ke-meng Yang Yu-feng Guo Jun Zhang Man Li Ling Du Zhi-kuang Cai Zi-xuan Wang National & Local Joint Engineering Laboratory for RF Integration and Micro-packaging Technologies College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications

ISBN: (纸本)9781467397209

In this paper, the impact of three dimensional effect of multi-finger layout on Variation of Lateral Doping(VLD), the Variation of Lateral Thickness(VLT) and Reduced Surface Field(RESUrf) LDMOS is explored. These devices are compared on the basis of breakdown voltage and on-state resistance. The simulation indicates that compared with VLT and conventional RESUrf LDMOS, the breakdown voltage of VLD is insensitive to the three dimensional effect of multi-finger layout because of its unchanged electric field. However, the specific on-state resistance of central source case in VLD and VLT LDMOS has a remarkable increase due to the low current density.

关键词： Comparison of the three dimensional effect of multi-finger layout in VLD/VLT/RESUrf LDMOS RESUrf VLD

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A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

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Chinese Physics B 2022年第2期31卷 342-347页

作者： Wei-Ming Sun Bing-Yang Sun Shan Li Guo-Liang Ma Ang Gao Wei-Yu Jiang Mao-Lin Zhang Pei-Gang Li Zeng Liu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by *** fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a *** by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,*** theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,*** time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

关键词： β-Ga2O3 γ-CuI heterojunction broadband photodetector self-power

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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

Numerical Study of the VDMOS with an Integrated High-K Gate ...

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2021 China Semiconductor Technology International Conference, CSTIC 2021

作者： Zhang, Zhenyu Yao, Jiafei Guo, Yufeng He, YongChen Liu, JinCheng Gu, Mingyuan Liang, Qicong National and Local Joint Engineering Laboratory of Rf Integration and Micro-assembly Technology Nanjing China

ISBN: (纸本)9781665449458

The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity. First, HK dielectric trench makes the electric field distribution of the drift region more uniform, thus improving breakdown voltage (BV). Second, the HK dielectric trench assists the depletion of the drift region, thereby increasing the doping concentration of the drift region and decreasing the specific on-resistance (Ron, sp). Third, the HK gate dielectric decreases the threshold voltage (Vth) and increases the transconductance (gm) of the device. Simulation results show that the new VDMOS has a better breakdown, output, and conduction characteristics when compared to the sidewall HK dielectric VDMOS (SWHK VDMOS) and conventional VDMOS (Con VDMOS). © 2021 IEEE.

关键词： High-k dielectric

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High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

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Chinese Physics B 2023年第1期32卷 458-463页

作者：连晓娟付金科高志瑄顾世浦王磊 The College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China

Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage(0.38 V)and current(200 nA), an extremely steep slope(< 0.1 m V/dec), and a relatively large off/on ratio(> 10^(3)). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.

关键词： memristors artificial neurons 2D MXene Ge_(2)Sb_(2)Te_(5)

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A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

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Chinese Physics B 2023年第4期32卷 605-612页

作者：杨莉莉彭宇思刘增张茂林郭宇锋杨勇唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)*** results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV ***,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and *** zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,*** general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

关键词： Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction UV photodetector self-powered operation

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