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Design of High Performance MXene/Oxide Structure Memristors for Image Recognition Applications

Chinese Journal of Electronics 2024年第2期33卷 336-345页

作者： Xiaojuan LIAN Yuelin SHI Xinyi SHEN Xiang WAN Zhikuang CAI Lei WANG The College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

Recent popularity to realize image recognition by memristor-based neural network hardware systems has been witnessed owing to their similarities to neurons and ***,the stochastic formation of conductive filaments inside the oxide memristor devices inevitably makes them face some drawbacks,represented by relatively higher power consumption and severer resistance switching *** this work,we design and fabricate the Ag/MXene（Ti3C2）/SiO2/Pt memristor after considering the stronger interactions between Ti3C2and Ag ions,which lead to a Ti3C2/SiO2structure memristor owning to much lower "SET" voltage and smaller resistance switching fluctuation than pure ***,the conductances of the Ag/Ti3C2/SiO2/Pt memristor have been modulated by changing the number of the applied programming pulse,and two typical biological behaviors,i.e.,longterm potentiation and long-term depression,have been ***,device conductances are introduced into an integrated device-to-algorithm framework as synaptic weights,by which the MNIST hand-written digits are recognized with accuracy up to 77.39%.

关键词： Memristor MXene/Oxide structure Electrical characteristics First-principles calculations Image recognition

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Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

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Journal of Semiconductors 2023年第11期44卷 83-88页

作者： Danlu Liu Ming Li Tang Xu Jie Dong Yuming Fang Yue Xu College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology Nanjing 210023China

The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was *** simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μ*** is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias *** the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring *** comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise *** study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

关键词： single-photon avalanche diode(SPAD) virtual guard ring dark count rate(DCR) photon detection probability(PDP) afterpulsing probability(AP)

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Dual-linear polarized array with 9.3:1 Bandwidth and 50° scanning 4

Dual-linear polarized array with 9.3:1 Bandwidth and 50° sc...

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4th International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2021

作者： Wu, Zhe Zhang, Congtian Xu, Lijie National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A dual-linear polarized tightly coupled dipole array (TCDA) is presented with a 9.3:1 bandwidth for voltage standing wave ratio (text{VSWR}) © 2021 Applied Computational Electromagnetics Society (ACES).

ISBN: (纸本)9781733509619

关键词： Bandwidth

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Wideband Conformal Antenna Integrated with Lens for Implantable Capsule System 4

Wideband Conformal Antenna Integrated with Lens for Implanta...

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4th International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2021

作者： Xu, Li-Jie Ma, Zhen-Yu Wu, Zhe National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781733509619

This paper presents a conformal antenna integrated with lens for wireless capsule endoscopy applications. Flexible and biocompatible material polyimide is used as capsule wall for human safety issues. To save the inner space of capsule, the proposed antenna is placed inside the capsule, with its radiation patch attached to the capsule cap in conformal form. Besides, the radiation patch is designed in bowtie shape, with one arm shorted to the ground and the other arm fed by coaxial cable. In this way, quarter wavelength resonance is realized with wide bandwidth. Additionally, to meet the application requirement, a hemispherical lens is taken into consideration and placed in capsule cap below the antenna patch. Finally, the simulation result shows that a wide bandwidth of 97.9% can be obtained of this integrated design. © 2021 Applied Computational Electromagnetics Society (ACES).

关键词： Slot antennas

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Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

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Chinese Physics B 2020年第3期29卷 460-467页

作者： Jia-Fei Yao Yu-Feng Guo Zhen-Yu Zhang Ke-Meng Yang Mao-Lin Zhang Tian Xia College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China School of Electrical Engineering University of VermontBurlingtonVT 05405USA

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.

关键词： high-k dielectric step doped silicon pillar model breakdown voltage

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3-D absorptive frequency selective reflector based on slotlines

3-D absorptive frequency selective reflector based on slotli...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Zhang, Yixiong Zhao, Xuankai Li, Bo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China

ISBN: (纸本)9781538663462

This paper presents an absorptive frequency selective reflector (AFSR), which exhibits a flat reflection characteristic with absorption at the both sides of the reflection band. This structure formed in planar slotline structures is mainly inclusive of one lossless resonator and two lossy resonators, which are responsible for one reflection band and two absorption bands respectively. In order to minimize the coupling of these three resonators, metallic plates are utilized to make these three resonators separated. In this paper, equivalent circuit model (ECM) based on transmission line theory is introduced to describe the design concept. Then, the realization of specified structure is provided, where a good agreement of reflection coefficient results between EM simulation and ECM is achieved. The proposed AFSR features stable performance under oblique incident angles up to 40°. © 2018 IEEE.

关键词： Resonators

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Review of the SiC LDMOS power device

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Journal of Semiconductors 2024年第8期45卷 4-17页

作者： Ziwei Hu Jiafei Yao Ang Li Qi Sun Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo College of Integrated Circuit Science and Engineering(Industry-Education Integration School) Nanjing University of Posts andT elecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong 226000China

Silicon carbide(SiC),as a third-generation semiconductor material,possesses exceptional material properties that significantly enhance the performance of power *** SiC lateral double-diffused metal–oxide–semiconductor(LDMOS)power devices have undergone continuous optimization,resulting in an increase in breakdown voltage(BV)and ultra-low specific on-resistance(Ron,sp).This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices,including the trench-gate technology,reduced surface field(RESUrf)technology,doping technology,junction termination techniques and so *** paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.

关键词： SiC LDMOS specific on-resistance breakdown voltage

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Dramatic reduction in dark current ofβ-Ga_(2)O_(3) ultraviolet photodectors viaβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation

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Chinese Physics B 2023年第1期32卷 415-420页

作者：岳建英季学强李山岐晓辉李培刚吴真平唐为华 Laboratory of Optoelectronics Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210046China

Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based onβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) film grown by metal-organic chemical vapor *** was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers,resulting in low switching ratio and low responsivity of the *** this work,β-(Al_(0.25)Ga_(0.75))_(2)O_(3) films are used as surface passivation *** to its wide band gap,we obtain excellent light transmission and high lattice matching withβ-Ga_(2)O_(3).We explore the change and mechanism of the detection performance of theβ-Ga_(2)O_(3) detector afterβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface *** is found that under the illumination with 254 nm light at bias 5 V,theβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3)photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10^(5).The dark current is sharply reduced about 50 times after passivation of theβ-Ga_(2)O_(3) surface,and current on/off ratio increases by approximately 2 *** is obvious thatβ-Ga_(2)O_(3) detectors withβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation can offer superior detector performance.

关键词： β-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) MOCVD photodetectors defect passivation

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An Active Gate Driver with Controllable Gate Current for SiC MOSFETs 9

An Active Gate Driver with Controllable Gate Current for SiC...

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9th International Conference on Integrated Circuits and microsystems, ICICM 2024

作者： Jiang, Zhengfei Yao, Jiafei Dai, Yuxuan Hu, Ziwei Li, Man Zhang, Yi Wang, Zixuan Cai, Zhikuang Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798331509453

An active gate driver (AGD) with controllable gate current (CGC) for SiC MOSFETs is proposed to reduce voltage overshoots and current overshoots. In the CGC-AGD, the controllable current overshoot suppression circuit and voltage overshoot suppression circuit are designed to control the rate of changes in current (di/dt) and voltage (dv/dt) to effectively reduce overshoots. Meanwhile, the current conversion circuit and the push-pull amplifier circuit compensate for the current reduction resulting from the overshoot suppression. This paper simulated the current and voltage overshoot during the switching process based on a double pulse test set up with a 1200V SiC MOSFET by LTspice software. The simulation results show that the current overshoot was reduced by 60% and the voltage overshoot was reduced by 22% when compared to the conventional gate driver (CGD). While compared with the AGD circuit, the current overshoot of CGC-AGD is reduced by 26% and the voltage overshoot is reduced by 19%. These results demonstrate that the CGC-AGD has better suppress on current and voltage overshoot. © 2024 IEEE.

关键词： MOSFET devices

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A Review of Intelligent Design for Test Based on Machine Learning

A Review of Intelligent Design for Test Based on Machine Lea...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Zhao, Zeyu Cai, Zhikuang Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Nanjing China

ISBN: (纸本)9798350304510

In recent years, with the development of post-Moore era, integrated circuit architecture is complex and test cost is increasing. How to apply efficient, reliable, fast and sustainable ideas to integrated circuit design has become a research hotspot in this field. Machine Learning, by virtue of its ability to quickly process abundant data information, shines in the field of Design For Test, which aims to improve the reliability of integrated circuit products and reduce design costs. In this paper, we introduce the application of Machine Learning in scan compression, Automatic Test Pattern Generation algorithm, the Test Pattern Generator in Built-In-Self-Test and test power. In addition, we prospect the foreground application of Machine Learning application in scan test, Automatic Test Pattern Generation, Built-In-Self-Test and test power. © 2023 IEEE.

关键词： Machine learning

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