检索结果-内蒙古大学图书馆

13th International Conference on microwave and Millimeter Wave Technology, ICMMT 2021

作者： Yin, Huanyu Li, Pinyan Liu, Leilei National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210003 China

ISBN: (纸本)9781665434379

In this paper, a circularly polarized leaky wave antenna based on compound left-right-hand structure (CRLH) is proposed. In this design, the equivalent series capacitance is realized by the annular groove on the metal microstrip, and the parallel inductance is realized by the metal through hole. The antenna can realize frequency beam scanning in 14-18GHz and circular polarization in 15.5-18GHz. © 2021 IEEE.

关键词： Traveling wave antennas

来源：评论

学校读者我要写书评

暂无评论

A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network 9

A Scalable Model for On-Chip Interdigital Capacitor Based on...

引用

9th International Conference on Integrated Circuits and microsystems, ICICM 2024

作者： Xiong, Yuqing Guo, Siqing Hu, Shanwen Gu, Yan Fang, Yuming Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798331509453

A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditional series equivalent circuit into a π-type structure and adding a series network of resistor and capacitor to characterize the coupling effect, the variation of the equivalent series resistance (ESR) and S-parameter with frequency can be effectively predicted. According to the mathematical equation, the value of each component for the 1-π equivalent circuit model can be quickly and correctly obtained. In order to effectively improve the prediction accuracy and convergence speed of neural network, Particle Swarm Optimization (PSO) and Levenberg-Marquardt Back Propagation (LMBP) are used to select and optimize the weights and thresholds of the neural networks. Compared with the traditional neural network model, the proposed SMNN reduces the number of neurons required to map the input-output nonlinear relationship, so that the modeling time is only reduced to 10 ∼ 15 seconds, and the test data accuracy is good. © 2024 IEEE.

关键词： Particle swarm optimization (PSO)

来源：评论

学校读者我要写书评

暂无评论

Tradeoff between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS 15

Tradeoff between the Breakdown Voltage and Specific On-Resis...

引用

15th IEEE International Conference on ASIC, ASICON 2023

作者： Guo, Yufeng Yang, Kemeng Chen, Jing Li, Man Jiang, Zhengfei Yao, Jiafei Zhang, Jun Zhang, Maolin Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China

ISBN: (纸本)9798350312980

The tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp) is an important issue for the power device. Baliga's Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship. However, the strong 2-D effect is not considered in the conventional BFOM and the present silicon limit. In this paper, a new BFOM model of SOI RESUrf LDMOS is proposed based on the formulized 2-D electric field in the drift region. Then, the device structure parameters are optimized to maximize the BFOM. A novel silicon limit and critical electric field are also derived. The differences between the lateral and the vertical devices are investigated and compared. The mechanism is discussed. The simulation based on the TCAD tool is employed to verify the novel BFOM and silicon limit. © 2023 IEEE.

关键词： BFOM Breakdown voltage LDMOS RESUrf Silicon limit SOI Specific on-resistance

来源：评论

学校读者我要写书评

暂无评论

Design of Dual-band Implantable Antenna with Shorting Pins 8

Design of Dual-band Implantable Antenna with Shorting Pins

引用

8th Asia-Pacific Conference on Antennas and Propagation, APCAP 2019

作者： Hua, Dengyu Jin, Xiaoyu Xu, Li-Jie Duan, Zhu Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China Southeast University State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665400541

This paper proposes a pin-loaded dual-band antenna for implantable applications, covering both 915 MHz Industrial, Scientific and Medical (ISM) band and 1.4 GHz Wireless Medical Telemetry Service (WMTS) band. With two shorting pins loaded at two corners, miniaturization is achieved. Furthermore, four straight slots are introduced on the top patch, giving rise to the appearance of two resonances for dual-band operation. To achieve better impedance matching, another three open-end L-shaped slots are etched on the ground, and the final proposed antenna is well matched at two required bands. © 2019 IEEE.

关键词： microwave antennas

来源：评论

学校读者我要写书评

暂无评论

Band offsets and electronic properties of the Ga_(2)O_(3)/FTO heterojunction via transfer of free-standing Ga_(2)O_(3) onto FTO/glass

引用

Chinese Physics B 2021年第11期30卷 385-388页

作者： Xia Wang Wei-Fang Gu Yong-Feng Qiao Zhi-Yong Feng Yue-Hua An Shao-Hui Zhang Zeng Liu Department of Electrical Engineering and Automation Shanxi Institute of TechnologyYangquan 045000China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous *** this work,the band offsets of the Ga_(2)O_(3)/FTO heterojunction are studied using x-ray photoelectron spectroscopy(XPS)based on Kraut’s method,which suggests a staggered type-II alignment with a conduction band offset(DEC)of 1.66 eV and a valence band offset(DEV)of􀀀2.41 ***,the electronic properties of the Ga_(2)O_(3)/FTO heterostructure are also measured,both in the dark and under ultraviolet(UV)illuminated conditions(254 nm UV light).Overall,this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga_(2)O_(3).

关键词： Ga_(2)O_(3)/FTO heterojunction band alignment magnetron sputtering free-standing

来源：评论

学校读者我要写书评

暂无评论

Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

引用

Science China(Technological Sciences) 2024年第11期67卷 3477-3484页

作者： YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical ***,we construct a high-performance Ga_(2)O_(3)photodetector realized by *** high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated ***,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

关键词： Ga_(2)O_(3) back-illuminated solar-blind photodetector

来源：评论

学校读者我要写书评

暂无评论

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response

引用

Chinese Physics B 2022年第8期31卷 700-704页

作者： Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China China Academy of Launch Vehicle Technology Beijing 100076China School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Center for Optoelectronics Materials and Devices Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is *** Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering *** one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo ***,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.

关键词： Ga_(2)O_(3) array photodetector MOCVD deep UV detection

来源：评论

学校读者我要写书评

暂无评论

Complete Timing Model of ECSM Lookup Table for CMOS Inverter 8

Complete Timing Model of ECSM Lookup Table for CMOS Inverter

引用

8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Wang, Jiawei Guo, Jingjing Zhao, Dongmin Cai, Zhikuang Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In the early days, engineers used non-linear delay models (NLDM) to estimate the circuit delay information. However, the accuracy of NLDM lookup table (LUT) decreases with the continuous change of the process, which makes the delay estimation become a difficult problem. Therefore, the effective current source model (ECSM) is proposed. The ECSM is a LUT composed of input transition time (TR) and load capacitance (CL), which can save the threshold crossing point (TCP) of the output waveform to better estimate the delay. However, the timing model is needed to reduce re-presentations, due to the high cost of building the library of ECSM. In this work, we present a timing model of the complete ECSM LUT for a CMOS inverter. The timing model is divided into two cases with a total of five regions. The proposed timing model is further analyzed by judging the value of threshold crossing points' voltage (VTCP) and drain to source saturation voltage (Vdsat), and the model is simplified for different threshold crossing points. Compared with the simulation results of HSPICE, the model is accurate with a maximum error of 2.35% and a maximum average error of 0.45%, which reduces the repetitive simulation of HSPICE. © 2023 IEEE.

关键词： Table lookup

来源：评论

学校读者我要写书评

暂无评论

A 14-ppm/V 1.5-ppm/°C Reference Voltage Source with a Wide Input Range of 4.5-35V 8

A 14-ppm/V 1.5-ppm/°C Reference Voltage Source with a Wide ...

引用

8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Du, Yifei Wang, Xin Wu, Wei Han, Zhenhua Qi, Zhiwei Wang, Zixuan Hu, ShanWen Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

This work presents a high-precision and wide-input-range reference voltage source based on a 180nm BCD process. The reference voltage source generates a constant voltage of 2.5V under the supply voltage ranging from 4.5V to 35V. Both a pre-regulator with current extraction, and high-order curvature compensation are proposed in this work. The current extraction circuit greatly improves the stability of output voltage, and the high-order term of VBE in Bipolar Junction Transistor (BJT) is used for temperature compensation to achieve an output voltage with a low temperature coefficient. Simulation results show that a line regulation of 14ppm/V is achieved, and an average temperature coefficient is 1.5ppm/°C over the range of -45°C to 125°C. In addition, the Power Supply Rejection Ratio (PSRR) is 102.82dB at 10Hz. © 2023 IEEE.

关键词： Temperature

来源：评论

学校读者我要写书评

暂无评论

A High-Precision Delay Faults Testing Technique Based on the Improved DWR Structure 8

A High-Precision Delay Faults Testing Technique Based on the...

引用

8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Liu, Xiaoting Zhang, Xuewei Hong, Haofei Zhou, Guopeng Wang, Zixuan Cai, Zhikuang Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

Aiming at the challenge of testing delay faults in through silicon via (TSV) of Chiplets, a high-precision delay faults testing technique based on the improved die wrapper register (DWR) is proposed. Relying on time-to-digital converter (TDC) embedded in the original DWR, transitional signal is propagated in delay chains and conversed into a digital signal to observe whether there is the delay fault. The double delay chains are constructed by two kinds of XOR gates with different delays. The conversion with high precision is achieved by dividing the transition signal into continuous small time-intervals. With the improved test access port controller (TAPC) circuit, the time to configure effective test path is greatly reduced and the delay test can be realized without additional external interfaces. The simulation results demonstrate that delay faults can be detected within the precision of 11.246ps and the time of test configuration is reduced. © 2023 IEEE.

关键词： Frequency converters

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：