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Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga_(2)O_(3)heterojunction by trapping effect

Science China(Technological Sciences) 2022年第3期65卷 704-712页

作者： LI Shan YUE JianYing LU Chao YAN ZuYong LIU Zeng LI PeiGang GUO DaoYou WU ZhenPing GUO YuFeng TANG WeiHua Laboratory of Information Functional Materials and Devices School of ScienceState Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is ***,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid *** adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered *** the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;*** better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier *** the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.

关键词： oxygen vacancy self-powered photodetector heterojunction PEDOT:PSS/ε-Ga2O3

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A Wide-Range and High-Linearity Timing Generator with 1.25ps-Resolution 8

A Wide-Range and High-Linearity Timing Generator with 1.25ps...

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Chen, Tianyang Wang, Qianyu Wang, Ze Qi, Zhiwei Han, Zhenhua Liu, Lu Hu, Shanwen Nanjing University of Posts and Telecommunications College of Intergrated Circuit Science and Engineering Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In this paper, a wide range and high resolution of the timing generator circuit is introduced. A high precision delay phase locked loop (DLL) technology is proposed, which uses two identical locking loops to offset the static phase error, realizes accurate delay locking and improves the circuit resolution. In the temperature range of -20 80°C, and the test clock signal ranges from 100KHz to 5GHz, the resolution is 1.25ps and covers a timing adjustment range of 10.4ns, with nonlinear INL less than 0.7 LSB and DNL less than 0.5 LSB. © 2023 IEEE.

关键词： Phase locked loops

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Application of Machine Learning Method in the Modeling and Designing of Semiconductor Power Devices 16

Application of Machine Learning Method in the Modeling and D...

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16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

作者： Guo, Yufeng Chen, Jing Zhang, Jun Yao, Qing Dai, Yuxuan Guo, Bin Xia, Renji Zhang, Maolin Li, Man Yao, Jiafei 1College of Integrated Circuit Science and Engineering Nanjing University of Postsand Telecommunications Nanjing 210023 China 2National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

With the constantly innovating of power integrated circuits, the design and analysis of semiconductor devices are getting more crucial, yet more challenging. Alongside, recent advances in machine learning(ML) technology have exhibited extraordinary potential in power device designing and modeling, as which is capable of achieving efficient but accurate performance prediction and device design. This paper presents a unique analysis from the following two aspects according to the task properties, including performance modeling and design automation. The results show that the ML techniques have been utilized to improve the efficiency with expected accuracy;hence, paving another direction for the intelligent semiconductor device design. © 2022 IEEE.

关键词： Computer aided design

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Research on Space-Time Orbital Angular Momentum Antenna Array Based on Sequential Control 13

Research on Space-Time Orbital Angular Momentum Antenna Arra...

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13th International Conference on microwave and Millimeter Wave Technology, ICMMT 2021

作者： Weijie, Gong Yumei, Chang Zhenliang, Zhou Tao, Zhu Ye, Han National And Local Joint Engineering Laboratory Of RF Integration And Micro-Assembly Technology 9 Wenyuan Rd Nanjing210035 China Nanjing University Of Posts And Telecommunications 9 Wenyuan Rd Nanjing210035 China

ISBN: (纸本)9781665434379

In this paper, the principle and influence factors of orbital angular momentum (OAM) electromagnetic (EM) waves generated by space-time antenna array (STAA) have been studied. A STAA is formed by introducing the time parameter as a new dimension to the traditional antenna array. The amplitude and phase weighting of the traditional antenna array can be easily realized through the time weighting of the STAA, so the OAM can be generated by the STAA. At the same time, in order to show the influence of the radiation characteristics of antenna array on the generation of OAM waves, a circular patch antenna array that can work at 2.45GHz is designed and simulated to verify the proposal. According to the simulation results, one can conclude that, the number of modes of OAM generated by the STAA is determined by the STAA's bandwidth and the frequency of the switching function. More modes of OAM waves can be generated by reducing the switching frequency or broadening the antenna bandwidth. © 2021 IEEE.

关键词： Antenna arrays

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Multi-Instantiation Top-Level Routing Technique Based on Decision Negotiation Algorithm 6

Multi-Instantiation Top-Level Routing Technique Based on Dec...

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6th International Conference on Electronics Technology, ICET 2023

作者： Yang, Hang Zhang, Xuewei Cai, Zhikuang Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing210003 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing210003 China

ISBN: (纸本)9798350337693

With the development of integrated circuit, multi-instantiated block technology is considered as a reliable optimization direction of chip design, which can effectively save the storage and labor cost in the development process, but brings new challenges to the top layer routing at the same time. On this basis, a multi-instantiation top-level routing algorithm based on decision negotiation is designed in this paper, which effectively solves the problems of multi-instantiated block routing, including long routing time and too long path length. In this paper, a non-uniform grid form is proposed to formulate alternative path sets and determine alternative routing channels between endpoints. The decision extraction and decision evaluation algorithms are used to deal with the path redundancy and short circuit problems generated by multiple instantiations. The feasible solution is determined by improved BFS (Breadth First Search) algorithm on the candidate decision set. The optimal solution with the shortest path in Manhattan is determined by iterative decision evaluation in the feasible solution. In order to verify the accuracy and effectiveness of the proposed method, a verification experiment is conducted in this paper for a number of multi-instantiation modules within 100. The experimental results show that the routing time of the proposed multi-instantiation top-level routing algorithm based on decision negotiation is between 0.1s and 3s, and the ratio of the path length to the standard value is over 95%, on the basis of a 100% success ratio. © 2023 IEEE.

关键词： Routing algorithms

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Multi-instantiated Block Top-layer Routing Technique Based on Steiner Tree Algorithm

Multi-instantiated Block Top-layer Routing Technique Based o...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Yang, Hang Chen, Junyuan Cai, Zhikuang Guo, Jingjing Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210003 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210003 China

ISBN: (纸本)9798350304510

As the scale of chips becomes larger and larger, the time and labor cost of the overall design of a large single chip becomes higher and higher. Therefore, it has become a widely adopted solution to divide one large-scale design into several smaller blocks and realize the functions of each block respectively. In this paper, a multi-instantiated block routing technique is proposed based on the improved Steiner tree algorithm. The algorithm divides wire networks into grids and uses FLUTE to construct and decompose the minimum rectangular Steiner tree of all multipin wire networks, which will decompose any multi-pin connection into several two-pin connections. It abstracts the functions of multi-instantiated blocks involved, and adds fixed pins on the edge of them. The routing process will be conducted inside every block respectively. In order to verify the accuracy and validity of the proposed method, a series of verification experiments are carried out, which shows that the proposed multi-instantiated block routing algorithm can effectively reduce the path redundancy caused by multiple pass-throughs in blocks and improve the routing process efficiency. © 2023 IEEE.

关键词： Routing algorithms

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Dual-band and dual-polarized repeater antenna for wearable applications

Dual-band and dual-polarized repeater antenna for wearable a...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Li, Kai Xu, Li-Jie Duan, Zhu Tang, Yiming Bo, Yaming National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China Research Center of Applied Electromagnetics Nanjing University of Information Science and Technology Nanjing210044 China

ISBN: (纸本)9781538663462

A novel dual-band repeater antenna is presented for wearable applications in this paper, covering 2.45 GHz (2.4-2.485 GHz) and 5.8 GHz (5.725-5.875 GHz) industrial scientific medical (ISM) bands. By utilizing stacked structure, different polarization properties are achieved at two bands for the proposed antenna. At 2.45 GHz ISM band, circular polarization property is achieved by adopting a truncated patch at the bottom layer, meeting the demands of communication with implants. While at 5.8 GHz ISM band intended for off-body communication, shorted circular patch is introduced, forming a monopole-like radiation pattern with linear polarization property. © 2018 IEEE.

关键词： Directional patterns (antenna)

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High-Flatness and Broadband Comb Generator Chip 16

High-Flatness and Broadband Comb Generator Chip

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16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

作者： Yang, Wang Qi, Qian Yufeng, Guo Yi, Zhang Nanjing Vocational University of Industry Technology Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Based on the signal analysis theory, we build a system-level model to explore the correlation between the narrow pulse signal and its frequency property. Using the high frequency InP HBT devices, this paper designed a broadband comb generator chip. Compared with the traditional method, the chip gets the advantages of high flatness, low power consumption and low input power in the form of active monolithic integrated circuit. Simulation results show that this comb generator can cover 0.1GHz~30GHz frequency band, with amplitude flatness under 12.1dBc and power consumption less than 0.5W. © 2022 IEEE.

关键词： Monolithic integrated circuits

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A 1-4 GHz Low Noise Amplifier in 0.5-μm E-Mode InGaAs pHEMT Technology

A 1-4 GHz Low Noise Amplifier in 0.5-μm E-Mode InGaAs pHEMT...

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2017 7th IEEE International Symposium on microwave, Antenna, Propagation, and EMC technologies

作者： Hairui Song Shu Yu Yufeng Guo Shanwen Hu National & Local Joint Engineering Laboratory for RF Integration and Micro-packaging Technologies College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications

This paper presents a 1-4 GHz low noise amplifier（LNA） for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20-23 d B, a noise figure of 1.8-2.3 d B during 1-4 GHz frequency *** input S11 is-13 d B10 d B and the output S22 is-18 d B10 d B. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode In Ga As p HEMT Process and occupies 0.96 mm2 area. The power consumption is 250 m W with 5 V supply.

关键词： pHEMT feedback low-noise amplifier(LNA) wideband

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Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction

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Chinese Physics B 2023年第2期32卷 193-200页

作者：刘增都灵张少辉边昂方君鹏邢晨阳李山汤谨诚郭宇锋唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China

A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas *** lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test *** simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关键词： gas sensor SnO_(2)–SnO porous GaN heterojunction

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