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The growth and expansive applications of amorphous Ga_(2)O_(3)

Chinese Physics B 2023年第8期32卷 52-68页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory for Organic Electronics and Information Displays(KLOEID)&Institute of Advanced Materials(IAM) Jiangsu Key Laboratory for BiosensorsJiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and AstronauticsMinistry of Industry and Information TechnologyNanjing 211106China

As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,*** from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum ***,a-Ga_(2)O_(3)extremely facilitates important applications in various applied ***,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are ***,potential methods to optimize the film properties are proposed by right of the inspiration from some recent ***,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.

关键词： amorphous-Ga_(2)O_(3) thin film functional application

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Compact SPAD pixels with fast and accurate photon counting in the analog domain

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Journal of Semiconductors 2021年第5期42卷 85-90页

作者： Zhiqiang Ma Zhong Wu Yue Xu College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF integration&Micro-Assembly Technology Nanjing 210023China

A compact pixel for single-photon detection in the analog domain is presented. The pixel integrates a single-photon avalanche diode(SPAD), a passive quenching & active recharging circuit(PQARC), and an analog counter for fast and accurate sensing and counting of photons. Fabricated in a standard 0.18 μm CMOS technology, the simulated and experimental results reveal that the dead time of the PQARC is about 8 ns and the maximum photon-counting rate can reach 125 Mcps(counting per second). The analog counter can achieve an 8-bit counting range with a voltage step of 6.9 mV. The differential nonlinearity(DNL) and integral nonlinearity(INL) of the analog counter are within the ± 0.6 and ± 1.2 LSB, respectively, indicating high linearity of photon counting. Due to its simple circuit structure and compact layout configuration, the total area occupation of the presented pixel is about 1500 μm^(2), leading to a high fill factor of 9.2%. The presented in-pixel front-end circuit is very suitable for the high-density array integration of SPAD sensors.

关键词： single-photon avalanche diode(SPAD) passive quenching&active recharging circuit(PQARC) analog counter nonlinearity

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12-bit 2.6 GS/s rf DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(rf DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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A scalable model for on-chip spiral inductors by Space-mapping neural network

A scalable model for on-chip spiral inductors by Space-mappi...

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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Huang, Shiliang Lin, Jie Ying, Shu Gu, Ling Hu, Shanwen Xue, Junjun Wang, Zixuan Cai, Zhikuang Yao, Jiafei Zhang, Jun Guo, Yufeng Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350341140

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds. © 2023 IEEE.

关键词： neural network parametric model Particle Swarm Optimization (PSO) scalable models space-mapping spiral inductors

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Wide Stopband Substrate Integrated Waveguide Filter Using Bisection and Trisection Coupling in Multilayer

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Chinese Journal of Electronics 2024年第2期33卷 436-442页

作者： Peng CHU Jianguo FENG Peng ZHU Lei GUO Long ZHANG Leilei LIU Guoqing LUO Ke WU College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology School of Information and Communication Engineering Dalian University of Technology Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems Sun Yat-sen University College of Electronics and Information Engineering Shenzhen University School of Electronics and Information Hangzhou Dianzi University Poly-Grames Research Center Polytechnique Montreal

This article presents a highly efficient method for substrate-integrated-waveguide（SIW） filters to achieve very wide stopbands. By employing the proposed trisection slots in addition to the bisection slots as the inter-coupling structures, all spurious modes below TE505 of a SIW filter working in the fundamental mode TE101（f0）can be eliminated without requiring additional structure or complex theoretical analysis, without affecting the design of the fundamental passbands, and without degrading the performance of the filters. For verification, two prototype filters are designed, fabricated, and measured with wide stopbands up to 4.15f0 and 4.83f0, respectively. The proposed technique could facilitate the development of high-performance wide-stopband SIW filters for microwave/wireless circuits and systems.

关键词： Bandpass filter Wide stopband Substrate integrated waveguide Spurious mode suppression Multilayer

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Circularly Polarized Leaky-wave Antenna Based on SubstrateIntegrated Waveguide Space Harmonic

Circularly Polarized Leaky-wave Antenna Based on SubstrateIn...

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International Symposium on Antennas and Propagation (ISAP)

作者： Yangjun Hu Leilei Liu Yangbing Jiang Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A circularly polarized leaky-wave antenna (LWA) is implemented on the substrate integrated waveguide (SIW) based on space harmonic radiation. The LWA cuts the current in two different directions by opening a cross-shaped slot on the substrate integrated waveguide. It realizes circular polarization and frequency sweeping characteristics by adjusting parameters of the slot. The antenna achieves a sweep range of 36°~13° in the θ direction backward radiation by -1 space harmonic from 15GHz to 17GHz. The gain is basically above 13.5dB. Parameters of the cross-shaped slot on the antenna performance are studied. The antenna is fabricated and the measurement results are agree well with the simulation ones.

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Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability

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IEEE Transactions on Electron Devices 2022年第5期69卷 2443-2448页

作者： Shan Li Zu-Yong Yan Jin-Cheng Tang Jian-Ying Yue Zeng Liu Pei-Gang Li Yu-Feng Guo Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science and the State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successfully constructed on the all-oxide Ga 2 O 3 /V 2 O 5 thin-film heterojunction. With a type-I straddling band alignment, the Ga 2 O 3 /V 2 O 5 heterostructure demonstrated an obvious photovoltaic effect with an open-circuit voltage of 0.4 V. The large bandgap (5.01 eV) of $\beta $ -Ga 2 O 3 and the effective electron–hole pair separation within heterointerface produced a superhigh solar-blind spectral discriminability for the Ga 2 O 3 /V 2 O 5 heterojunction PD, with deep-ultraviolet (DUV)/visible rejection ratio ( ${R}_{{240}}/{R}_{{400}}$ ) of 6.0 $\times 10^{{4}}$ , photo-to-dark current ratio (PDCR) of $2.6 \times 10^{{7}}$ , on/off switching ratio of $1.87\times 10^{{5}}$ , and specific detectivity of 7.8 $\times 10^{{13}}$ Jones. The largest responsivities in self-powered mode (0 V) and power-supply mode (−5 V) were 19.8 and 79.2 mA/W, respectively. The excellent self-powered photodetection performance of Ga 2 O 3 /V 2 O 5 oxide heterojunction provides a new strategy for next-generation energy-conservation solar-blind PDs.

关键词： Heterojunctions Absorption Photonic band gap Optical device fabrication X-ray scattering Vanadium Photodetectors

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Design of a Broadband Miniaturized Filter Power Amplifiers 8

Design of a Broadband Miniaturized Filter Power Amplifiers

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Liao, Xiang Huang, Jingjing Ying, Shu Hu, Shanwen Wang, Zixuan Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers. © 2023 IEEE.

关键词： Efficiency

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process 8

Design of a Broadband High Flatness Drive Amplifier Based on...

引用

8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Huang, Jingjing Lin, Jie Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than -12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers. © 2023 IEEE.

关键词： Equalizers

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A Compact Low-Loss Bi-directional Amplifier for Ku-band 8

A Compact Low-Loss Bi-directional Amplifier for Ku-band

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Lin, Jie Liao, Xiang Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200∗200 μ m2, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars. © 2023 IEEE.

关键词： Insertion losses

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