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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

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High-Flatness and Broadband Comb Generator Chip 16

High-Flatness and Broadband Comb Generator Chip

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16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

作者： Yang, Wang Qi, Qian Yufeng, Guo Yi, Zhang Nanjing Vocational University of Industry Technology Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Based on the signal analysis theory, we build a system-level model to explore the correlation between the narrow pulse signal and its frequency property. Using the high frequency InP HBT devices, this paper designed a broadband comb generator chip. Compared with the traditional method, the chip gets the advantages of high flatness, low power consumption and low input power in the form of active monolithic integrated circuit. Simulation results show that this comb generator can cover 0.1GHz~30GHz frequency band, with amplitude flatness under 12.1dBc and power consumption less than 0.5W. © 2022 IEEE.

关键词： Monolithic integrated circuits

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A 3D Crystal plasticity finite element model for a 3D package under drop impact

A 3D Crystal plasticity finite element model for a 3D packag...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Shijiao Liu Yujie Cheng Linhai Gan Shanwen Hu Zhikuang Cai Lu Liu The College of International Circuit Science and Engineering National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

As one of the most vulnerable positions in the microelectronic package structure, the defect of the solder joint may result in the breakdown of the entire electronic package. Researching the deformation behavior of solder joints in various kinds of loads is significant. The micron-sized solder joints may only contain one or several grains, the traditional macroscopic phenomenology constitutive model cannot reasonably reflect the grain deformation caused by crystalline sliding. A 3D crystal plastic finite element (CPFE) model of 40 Oriented Grains is set up to study the deformation behavior of Sn-3.0Ag-0.5Cu (SAC305) at various strain rates of 1%s -1 , 0.1s -1 , 0.01%s -1 and different temperatures of 298K, 348K, and 398K. Using the Crystal Plasticity Theory, the deformation behavior of every grain, and the mean stress and strain relation of the structure is achieved by means of homogenization. The model is used to simulate monoaxial tension testing of SAC305 solders under various strain rates of 1%s -1 , 0.1s -1 , and 0.01%s -1 , and different temperatures of 298K, 348K, and 398K. Based on the stress and strain relation of experiment data, the relative parameters of the model were adjusted. The results show that the Proper Precision of the SAC305 solder joints under various loading conditions can be used to describe the stress and strain behavior. On this basis, a 3D package finite element model with two chips is established to calculate the stress and non-elastic strain under the impact of dropping, and the sub-model analysis of solder joints in the package is carried out by using the constitutive model and a study was made on the deformed state of the solder joints. By analyzing the influence of different dropping heights (1m, 10m, 20m) and dropping gestures (face-down, right-side-up, and vertical-fall) on the deformation of the electronic package structure, the most vulnerable position of the package structure can be found out, which can provide suggestions for

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A Review of Intelligent Design for Test Based on Machine Learning

A Review of Intelligent Design for Test Based on Machine Lea...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Zeyu Zhao Zhikuang Cai National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

In recent years, with the development of post-Moore era, integrated circuit architecture is complex and test cost is increasing. How to apply efficient, reliable, fast and sustainable ideas to integrated circuit design has become a research hotspot in this field. Machine Learning, by virtue of its ability to quickly process abundant data information, shines in the field of Design For Test, which aims to improve the reliability of integrated circuit products and reduce design costs. In this paper, we introduce the application of Machine Learning in scan compression, Automatic Test Pattern Generation algorithm, the Test Pattern Generator in Built-In-Self- Test and test power. In addition, we prospect the foreground application of Machine Learning application in scan test, Automatic Test Pattern Generation, Built-In-Self- Test and test power.

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Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Gradient Algorithm on the Fixed-Rank Matrix Manifold

Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Grad...

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IEEE International Conference on Communications (ICC)

作者： Wanyue Zhang Yunchao Song Chen Liu Zheng Huang Mujun Qian College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781728190549

ISBN: (纸本)9781728190556

This paper investigates hybrid-field channel estimation for extremely large-scale MIMO (XL-MIMO) systems. Different from the previous algorithms based on sparsity, the proposed algorithm considers both the low-rank structure and the sparsity of the channel, leading to a more accurate estimation performance. Particularly, we formulate the estimation problem of the hybrid-field channel as a sparse matrix recovery problem with a fixed-rank constraint. However, this problem encounters two challenges: the non-smooth $\ell_{1}-\mathbf{norm}$ term and the non-convex fixed-rank matrix constraint. To address these challenges, we employ the proximal operator to handle the non-smooth $\ell_{1}-\mathbf{norm}$ term and consider the set of matrices with a fixed rank as the fixed-rank matrix manifold. Then a fixed-rank matrix manifold-based proximal gradient (FRM-PG) algorithm is proposed to smoothly search the solution on the fixed-rank matrix manifold, where the descent direction is derived in each iteration. Simulation results demonstrate that the proposed algorithm outperforms the classical channel estimation algorithms.

关键词： Manifolds Accuracy Simulation Channel estimation Estimation Sparse matrices Optimization

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Circularly polarized leaky wave antenna based on compound left-right-hand structure 13

Circularly polarized leaky wave antenna based on compound le...

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13th International Conference on microwave and Millimeter Wave Technology, ICMMT 2021

作者： Yin, Huanyu Li, Pinyan Liu, Leilei National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210003 China

ISBN: (纸本)9781665434379

In this paper, a circularly polarized leaky wave antenna based on compound left-right-hand structure (CRLH) is proposed. In this design, the equivalent series capacitance is realized by the annular groove on the metal microstrip, and the parallel inductance is realized by the metal through hole. The antenna can realize frequency beam scanning in 14-18GHz and circular polarization in 15.5-18GHz. © 2021 IEEE.

关键词： Traveling wave antennas

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Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS

Tradeoff Between the Breakdown Voltage and Specific On-Resis...

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International Conference on ASIC

作者： Yufeng Guo Kemeng Yang Jing Chen Man Li Zhengfei Jiang Jiafei Yao Jun Zhang Maolin Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The tradeoff between the breakdown voltage (BV) and specific on-resistance (R on,sp ) is an important issue for the power device. Baliga’s Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship. However, the strong 2-D effect is not considered in the conventional BFOM and the present silicon limit. In this paper, a new BFOM model of SOI RESUrf LDMOS is proposed based on the formulized 2-D electric field in the drift region. Then, the device structure parameters are optimized to maximize the BFOM. A novel silicon limit and critical electric field are also derived. The differences between the lateral and the vertical devices are investigated and compared. The mechanism is discussed. The simulation based on the TCAD tool is employed to verify the novel BFOM and silicon limit.

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Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability

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IEEE Transactions on Electron Devices 2022年第5期69卷 2443-2448页

作者： Shan Li Zu-Yong Yan Jin-Cheng Tang Jian-Ying Yue Zeng Liu Pei-Gang Li Yu-Feng Guo Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science and the State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successfully constructed on the all-oxide Ga 2 O 3 /V 2 O 5 thin-film heterojunction. With a type-I straddling band alignment, the Ga 2 O 3 /V 2 O 5 heterostructure demonstrated an obvious photovoltaic effect with an open-circuit voltage of 0.4 V. The large bandgap (5.01 eV) of $\beta $ -Ga 2 O 3 and the effective electron–hole pair separation within heterointerface produced a superhigh solar-blind spectral discriminability for the Ga 2 O 3 /V 2 O 5 heterojunction PD, with deep-ultraviolet (DUV)/visible rejection ratio ( ${R}_{{240}}/{R}_{{400}}$ ) of 6.0 $\times 10^{{4}}$ , photo-to-dark current ratio (PDCR) of $2.6 \times 10^{{7}}$ , on/off switching ratio of $1.87\times 10^{{5}}$ , and specific detectivity of 7.8 $\times 10^{{13}}$ Jones. The largest responsivities in self-powered mode (0 V) and power-supply mode (−5 V) were 19.8 and 79.2 mA/W, respectively. The excellent self-powered photodetection performance of Ga 2 O 3 /V 2 O 5 oxide heterojunction provides a new strategy for next-generation energy-conservation solar-blind PDs.

关键词： Heterojunctions Absorption Photonic band gap Optical device fabrication X-ray scattering Vanadium Photodetectors

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Sic-on-Insulator Based Lateral Power Device and it' S Analytical Models

SSRN

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SSRN 2024年

作者： Yao, Jiafei Li, Ang Liu, Yuao Hu, Ziwei Li, Man Yang, Kemeng Zhang, Jun Chen, Jing Zhang, Maolin Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong China

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides the dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analysis the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analysis the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both of the analytical and numerical results provide the physic explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device. © 2024, The Authors. All rights reserved.

关键词： Electric breakdown

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