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International Symposium on Antennas and Propagation (ISAP)

作者： Wei Dai Yiming Tang Zhaojun Chu Jinpeng Xu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts & Telecommunications Nanjing Jiangsu P.R. China

A novel microstrip patch antenna with bandwidth enhancement is proposed in this paper. Based on the structure of the traditional microstrip patch antenna, the proposed antenna adds an impedance matching network to broaden bandwidth and achieve lower return loss. Adding a parasitic patch near the original patch, the antenna bandwidth is further expanded and the radiation characteristics of the antenna can be improved. The simulated impedance bandwidth of 16.7% (14~16.5 GHz) can be obtained and the gain in the range of bandwidth is mostly above 6 dB. The proposed antenna enjoys good impedance matching and stable gain, which make it suitable for modern communication systems, satellite communications and some control systems.

关键词： Bandwidth microstrip antennas Patch antennas microstrip Gain Impedance matching

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Analytical modeling for substrate effect of lateral power devices

Analytical modeling for substrate effect of lateral power de...

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China Semiconductor Technology International Conference (CSTIC)

作者： Jing Chen Yufeng Guo Man Li Ling Du Xinchun Ji Changchun Zhang Jiafei Yao National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Tcchnology Nanjing China College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781509066957

A two-dimensional(2-D) analytical model for substrate effect of lateral power devices is developed. By solving the 2-D Poisson's equation, an analytical model is proposed and verified by the agreements between the analytical results and numerical simulation results using MEDICI. It suggests that the optimized substrate voltage modules the distributions of the surface potential and electrical field, whose effect is equivalent to changing the concentration of the drift region. As a result, the breakdown voltage is improved.

关键词： Analytical models Lead

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A low noise SPAD pixel array with analog readout method

A low noise SPAD pixel array with analog readout method

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China Semiconductor Technology International Conference (CSTIC)

作者： Ruiming Luo Yue Xu Bin Li College of electronic science & engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing China

ISBN: (纸本)9781509066957

This paper presents a parallel readout circuit for high density single photon avalanche diode (SPAD) pixel array. Each pixel consists of analog quenching circuit and counting circuit. Column parallel readout method is adopted and every eight columns of array pixel shares one multiplexer where the analog output signals of these pixels are selected to pass it subsequently. After that, the signals will be sent to correlated double sampling (CDS) circuit for elimination of fixed pattern noise (FPN). Then the processed signals will be inputted to off-chip high speed ADC for analog to digital conversion. The shared CDS can reduce chip area without lowering performance.

关键词： Integrated optics Optical imaging Optical sensors Photonics Capacitors CMOS integrated circuits Optical switches

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Automatic Design of Structural Parameters for GaN HEMT Using Genetic Algorithm and Artificial Neural Networks

Automatic Design of Structural Parameters for GaN HEMT Using...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Wei Du Jing Chen Jiahao Wu Qing Yao Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China The National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

In this paper, an automatic optimization technique of structural parameters for gallium nitride high-electron-mobility transistors (GaN HEMT) is proposed. Given the design targets, including breakdown voltage (BJI) and specific on-resistance (R on,sp ), this technique can provide the structural parameters of GaN HEMT to meet the targets based on automatic iteration and optimize process using artificial neural networks (ANN) and genetic algorithms (GA). The results show that, when evaluated through technology computer-aided design (TCAD) simulations, designs obtained from the proposed technique deviate from the expected specifications by 2.6% and 0.98%, respectively. Additionally, the efficiency of the proposed method is reflected in its runtime, with the automated design time for each case is within 2 minutes. We believe that the design approach is crucial in accelerating the design closure for GaN transistors.

关键词： Performance evaluation Design automation Runtime Artificial neural networks HEMTs Structural engineering Transistors

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Machine Learning-Based Performance Prediction Model Optimization for Soi Ldmos Using Adaptive Small Space Dataset

Machine Learning-Based Performance Prediction Model Optimiza...

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China Semiconductor Technology International Conference (CSTIC)

作者： Jinwen You Jing Chen Qing Yao Yuxuan Dai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China the National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

This work proposes an adaptive small space dataset generation approach to improve the ML-based model. By leveraging radial basis function (RBF) kernel to calculate similarity to the target structure, small space training data sets with high similarity are filtered for model training. The numerical results show that the small space model can not only improve the performance prediction accuracy, but also accelerate the model testing process. Meanwhile, the memory requirements during the training process are significantly reduced. In addition, the accuracies of small space models using different algorithms also demonstrate the robustness of the proposed method.

关键词： Training Adaptation models Training data Life estimation Predictive models Prediction algorithms Robustness

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α-Ga₂O₃ Photodetector With Responsivity Over A/W Level Based on Sn-Assisted Mist-CVD

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IEEE Sensors Journal 2024年第2期25卷 2518-2524页

作者： Gang Li Haoxuan Peng Yingxu Wang Suhao Yao Maolin Zhang Yufeng Guo Weihua Tang Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering and the National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and Telecommunications Nanjing China College of Electrical and Electronic Engineering Wenzhou University Wenzhou China

In recent years, $\alpha $ -Ga2O3 and $\alpha $ -Ga2O3-based photodetectors (PDs) have garnered significant attention due to their unique advantages in deep-ultraviolet (DUV) photodetection. However, the growth of $\alpha $ -Ga2O3 thin films via the mist chemical vapor deposition (mist-CVD) method faces several challenges, such as inferior crystallization quality, which impedes the development of high-performance PDs. In this study, we successfully achieved high-quality $\alpha $ -Ga2O3 epitaxy on the $\alpha $ -Al2O3 substrate using the tin (Sn)-assisted mist-CVD technique. A DUV PD was subsequently fabricated on the epitaxial film, and its detection performance was thoroughly evaluated. The PD achieved a photocurrent of up to 175.40 nA and a signal-to-noise ratio (SNR) of 76.5 dB. Most notably, it also exhibited a high responsivity of up to 3.76 A/W, an external quantum efficiency (EQE) of 1841.12%, and a detectivity of $1.8\times 10^{{11}}$ Jones, underscoring the potential of the Sn-assisted mist-CVD method for advancing the development of next-generation $\alpha $ -Ga2O3 DUV PDs.

关键词： Epitaxial growth Gallium Sensors Photodetectors Substrates Scanning electron microscopy Photonic band gap X-ray scattering Transmission electron microscopy Tin

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Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS

Tradeoff Between the Breakdown Voltage and Specific On-Resis...

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International Conference on ASIC

作者： Yufeng Guo Kemeng Yang Jing Chen Man Li Zhengfei Jiang Jiafei Yao Jun Zhang Maolin Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The tradeoff between the breakdown voltage (BV) and specific on-resistance (R on,sp ) is an important issue for the power device. Baliga’s Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship. However, the strong 2-D effect is not considered in the conventional BFOM and the present silicon limit. In this paper, a new BFOM model of SOI RESUrf LDMOS is proposed based on the formulized 2-D electric field in the drift region. Then, the device structure parameters are optimized to maximize the BFOM. A novel silicon limit and critical electric field are also derived. The differences between the lateral and the vertical devices are investigated and compared. The mechanism is discussed. The simulation based on the TCAD tool is employed to verify the novel BFOM and silicon limit.

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A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network

A Scalable Model for On-Chip Interdigital Capacitor Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Yuqing Xiong Siqing Guo Shanwen Hu Yan Gu Yuming Fang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (数字)9798331509453

ISBN: (纸本)9798331520243

A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditional series equivalent circuit into a $\pi$ -type structure and adding a series network of resistor and capacitor to characterize the coupling effect, the variation of the equivalent series resistance (ESR) and S-parameter with frequency can be effectively predicted. According to the mathematical equation, the value of each component for the $1\text{-}\pi$ equivalent circuit model can be quickly and correctly obtained. In order to effectively improve the prediction accuracy and convergence speed of neural network, Particle Swarm Optimization (PSO) and Levenberg-Marquardt Back Propagation (LMBP) are used to select and optimize the weights and thresholds of the neural networks. Compared with the traditional neural network model, the proposed SMNN reduces the number of neurons required to map the input-output nonlinear relationship, so that the modeling time is only reduced to $10 \sim 15$ seconds, and the test data accuracy is good.

关键词： Resistance Accuracy Capacitors Predictive models Prediction algorithms System-on-chip Scattering parameters Integrated circuit modeling Biological neural networks Equivalent circuits

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基于预连接镍链的高应变敏感度动态可调电磁干扰屏蔽弹性体

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Science China Materials 2024年第2期67卷 629-641页

作者：卞敬周兴成周翔马林峰朱先军李建民刘淑娟赵强 College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽... 详细信息

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽性能的弹性体材料.弹性体在机械拉伸和释放过程中表现出连续和可逆的电磁干扰屏蔽性能.原始弹性体具有良好的阻抗匹配和低介电损耗,允许大部分电磁波通过.拉伸使预连接的短链彼此接触,在内部形成大量的微尺度导电网络,显著增强了电导损耗能力,实现了较强的电磁干扰屏蔽能力.此外,我们通过无线应变传感系统验证了智能电磁干扰屏蔽弹性体的应用潜力,证明了可穿戴智能电磁干扰屏蔽精确监测人体运动的可能性.

关键词： adjustable electromagnetic interference shielding conductive elastomer electromagnetic sensing negative piezoresistivity

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Passive patterned polymer dispersed liquid crystal transparent display

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Chinese Optics Letters 2022年第1期20卷 155-159页

作者： Jing Yan Xiangwen Fan Yifan Liu Ying Yu Yuming Fang Ruo-Zhou Li College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China Touch and Display Module Development Group Microsoft Inc.Suzhou 215123China

A patterned polymer dispersed liquid crystal transparent display using one-time UV exposure is *** device is fabricated by exposing the cell with a uniform UV light through a mask with selective attenuation of the UV *** voltage-transmittance response of the device is different for the corresponding ***,three different states of total scattering,patterned transparent,and total transparent can be realized by controlling the applied *** proposed device used in shutter mode as smart windows and in projected display mode is demonstrated,which shows great potential for smart windows with customized patterns or logos and has potential application in the field of projected transparent displays.

关键词： polymer dispersed liquid crystal transparent display

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