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检索条件"机构=National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies"

共 122 条记录，以下是71-80 订阅

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Performance Variability and Analog Behaviors of Memristive Devices with New Transition Metal Carbide

Performance Variability and Analog Behaviors of Memristive D...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Fei Gao Yihao Chen Yuefeng Li Miaocheng Zhang Yu Wang Nan He Xinyi Shen Ertao Hu Xiang Wan Xiao Gong Yufeng Guo Xiaojuan Lian Yi Tong College of Electronic and Optical Engineering & College of Microelectronics National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing University of Posts and Telecommunications Nanjing China National University of Singapore Singapore

ISBN: (纸本)9781728135533

Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.

关键词： learning (artificial intelligence) memristors neural nets Memristors Neural network Transition metal carbides transition metal Artificial neural networks New families Electrical Synapses STT3A gene THICK MOULDING COMPOUND performance boost

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A 14-GHz 8-bit Direct Digital Synthesizer in InP DHBT Technology

A 14-GHz 8-bit Direct Digital Synthesizer in InP DHBT Techno...

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IEEE International Workshop on Radio-Frequency integration Technology (rfIT)

作者： Xiaopeng Li Yi Zhang Zhigong Wang Youtao Zhang Min Zhang Wei Cheng Hao Gao Nanjing GuoBo Electronics Co.Ltd Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assemblyTechnology Nanjing China Institute of RF-&-OE ICs Southeast University Nanjing China

This paper describes a 14-GHz 8-bit direct digital synthesizer(DDS)which is implemented using a 0.7-μm InP double hetero-junction bipolar transistor (DHBT) process. The DDS presented uses a sin-weighted nonlinear DAC to achieve a phase-to-amplitude ROM-less architecture which can make the best of speed advantage of the InP DHBT process for medium to large scale mixed signal integrated circuits. A simplified pipelined phase accumulator is used to reduce power consumption. The average value of SFDR of the output signal of the DDS in the Nyquist bandwidth is -24.8 dBc. The circuit integrates 2122 transistors, consumes a power of 2.4-W, and has a Figure of Merit (FOM) of 5.83GHz/W.

关键词： Indium phosphide III-V semiconductor materials Adders DH-HEMTs Clocks Pipelines Registers

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS Technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on microwave and Millimeter Wave Technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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Static thermal simulation of heterogeneous inp-slicon 3d IC stack

Static thermal simulation of heterogeneous inp-slicon 3d IC ...

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2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

作者： Yang, Yanhui Zhang, Yi Yang, Lei Li, Xiaopeng Zhang, Youtao Liu, Zhonghua Guo, Yufeng College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China

ISBN: (纸本)9781728102863

Diverse accessible heterogeneous integration (DAHI) a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated with vertical heterogeneous interconnection (HIC) structures. It is natural an extension of three-dimensional integrated chips and advanced complete system in a package (SIP). Despite its enormous potential and advantages, thermal management is the biggest challenge in heterogeneous integration. In this paper, the thermal conduction in heterogeneous integration of InP and Si is researched by using the finite element method. The simulation results show that four HICs is enough for a signal hot spot in a limit area. Two-row configuration is the best tradeoff between HIC number and the thermal management in the HIC matrix. The static thermal simulation can guide the design of circuit layout in the later stage, such as the number and distribution of InP devices and HICs. © 2019 IEEE.

关键词： Indium phosphide

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

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A Spline-Profile Smooth-Walled Horn With Low Cross-Polarization And Low Sidelobe

A Spline-Profile Smooth-Walled Horn With Low Cross-Polarizat...

引用

International Conference on Smart Grid and Electrical Automation (ICSGEA)

作者： Zijing Wu Yaming Bo Shaohua Wu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing People's Republic of China Jangsu Food and Pharmaceutical Science College

ISBN: (数字)9781728182780

ISBN: (纸本)9781728182797

spline-profile smooth-walled horns are widely used as feeds for its symmetric beam, low cross-polarization levels and low sidelobes while their fabrication is easier than corrugated conical horns, especially at millimeter-wave frequencies. In this paper, a spline-profile smooth-walled horn, for a synthetic aperture, has been demonstrated with low cross-polarization (

关键词： Zirconium Xenon Smart grids Hafnium Automation

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Leaky Wave Antenna Based on Composite Right/Left Handed Half-mode Substrate Integrated Waveguide

Leaky Wave Antenna Based on Composite Right/Left Handed Half...

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International Conference on microwave and Millimeter Wave Technology Proceedings

作者： Yangbin Jiang Leilei Liu Yangjun Hu Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing Jiangsu China

In this paper, we propose a half-mode substrate integrated waveguide (HMSIW) leaky wave antenna (LWA) based on composite right/left handed (CRLH) transimission line (TL). The unit cell of the proposed antenna consists of two vertical slots on the microstrip and two metal vias. The equivalent series capacitance and the equivalent shunt inductance in the CRLH structure are realized by vertical slots and two vias, respectively. We simulated the unit cell and the proposed antenna. The antenna can achieve continuously wide beam scanning from backward to forward. The beam scanning angles from -50 degrees to 30 degrees.

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Novel 3D bandpass frequency selective structures based on stacked planar slotlines: Modelling, design and validation 30

Novel 3D bandpass frequency selective structures based on st...

引用

30th Asia-Pacific microwave Conference, APMC 2018

作者： Zhang, Wanping Li, Bo Zhu, Lei Han, Ye Lyu, Yun-Peng National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China Department of Electncai and Computer Engineering University of Macau Macau999078 China

ISBN: (纸本)9784902339451

In this paper, a class of 3D bandpass frequency selective structures (FSSs) using stacked planar slotlines is proposed to exhibit bandpass filtering response of high performance. Firstly, a traditional slot-type frequency selective surface and the proposed stacked planar slotlines are introduced successively, and their operating principles are discussed to provide a comparison with each other. Then, two design examples on the basis of the stacked slotlines are presented to exhibit bandpass response with wide out-of-band rejection and high frequency selectivity, respectively. It is found that the stacked slotline structures can produce controllable multi-mode resonance and be exactly analyzed by using transmission-line theory over a wide frequency range. © 2018 IEICE

关键词： Frequency selective surfaces

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A 32.2-GHz Full Adder in InP DHBT Technology

A 32.2-GHz Full Adder in InP DHBT Technology

引用

IEEE International Workshop on Radio-Frequency integration Technology (rfIT)

作者： Yi Zhang Xiaopeng Li Youtao Zhang Ying Zhang Yufeng Guo Zhonghua Liu Hao Gao National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China JiangSu HengXin Technology Co. Ltd Yixing China Eindhoven University of Technology Eindhoven Netherlands

An ultra-high speed 1bit full adder based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology is presented. The synchronous latch is combined with adding operation to improve the calculation speed. A single-level parallel-gated circuit is designed using majority decision algorithm to reduce the power consumption. Measurement results show that the maximum clock frequency of the full adder is 32.2-GHz, and the overall power consumption is 350mW.

关键词： Adders Latches Indium phosphide III-V semiconductor materials DH-HEMTs Power demand Frequency measurement

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Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Gradient Algorithm on the Fixed-Rank Matrix Manifold

Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Grad...

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IEEE International Conference on Communications (ICC)

作者： Wanyue Zhang Yunchao Song Chen Liu Zheng Huang Mujun Qian College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781728190549

ISBN: (纸本)9781728190556

This paper investigates hybrid-field channel estimation for extremely large-scale MIMO (XL-MIMO) systems. Different from the previous algorithms based on sparsity, the proposed algorithm considers both the low-rank structure and the sparsity of the channel, leading to a more accurate estimation performance. Particularly, we formulate the estimation problem of the hybrid-field channel as a sparse matrix recovery problem with a fixed-rank constraint. However, this problem encounters two challenges: the non-smooth $\ell_{1}-\mathbf{norm}$ term and the non-convex fixed-rank matrix constraint. To address these challenges, we employ the proximal operator to handle the non-smooth $\ell_{1}-\mathbf{norm}$ term and consider the set of matrices with a fixed rank as the fixed-rank matrix manifold. Then a fixed-rank matrix manifold-based proximal gradient (FRM-PG) algorithm is proposed to smoothly search the solution on the fixed-rank matrix manifold, where the descent direction is derived in each iteration. Simulation results demonstrate that the proposed algorithm outperforms the classical channel estimation algorithms.

关键词： Manifolds Accuracy Simulation Channel estimation Estimation Sparse matrices Optimization

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