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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jie Lin Xiang Liao Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200*200 $\mu \mathbf{m}^{\mathbf{2}}$, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars.

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Design of a Broadband Miniaturized Filter Power Amplifiers

Design of a Broadband Miniaturized Filter Power Amplifiers

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Xiang Liao Jingjing Huang Shu Ying Shanwen Hu Zixuan Wang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers.

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT Technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on microwave and Millimeter Wave Technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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Mxene/Biomass/Chitosan Carbon Aerogel (Mbc) with Shared Cathode and Anode for the Construction of High-Efficiency Asymmetric Supercapacitor

SSRN

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SSRN 2023年

作者： Zhang, Shaohui Cui, Yinhua Shi, Qingshan Liu, Zeng Lv, Jingchun Wang, Chao Xie, Xiaobao State Key Laboratory of Applied Microbiology Southern China Institute of Microbiology Guangdong Academy of Sciences Guangzhou510070 China Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronic Engineering College of Mechatronics and Control Engineering Shenzhen University Shenzhen518060 China School of Chemistry and Pharmaceutical Engineering Shandong First Medical University Shandong Academy of Medical Sciences Tai’an271016 China College of Integrated Circuit Science and Engineering & National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China College of Textiles and Clothing Yancheng Institute of Technology Yancheng224051 China

Despite the rapid development of biomass-based carbon aerogel research and specific outcomes have been accomplished, the preparation process requires to be developed further compared with other porous media such as activated carbon and graphene, and there are still many obstacles to overcome before reaching industrial production and practical applications since the competitiveness in terms of mechanical strength, adsorption capacity, and structural stability is weaker. Via using electro-static self-assembly between the negatively charged MXene nanosheets and the positively charged radish flakes infiltrated with salt solution, a strategy is proposed for the in-situ preparation of flexible MXene/biomass/chitosan aerogel (MBC) pseudo-capacitive electrode by hydrothermal methods. The electrode was drived according to the principle of concentration difference permeation (CDP) between MXene nanosheets and radish cells. Under both driving forces, the MXene nanosheets are embedded inside the radish cells. Importantly, the MBC pseudocapacitive electrode doping 6% (MBC-6) by lyophilization annealing exhibits a volumetric specific capacitance of 1801.4 mF/cm3 at a scan rate of 2 mV/s. In addition, the assembled binder-free asymmetrical supercapacitor exhibits an ultra-high volume energy density of 33.4 Wh/L, a capacitance retention rate of 82% and a long cycle life of 50000 times at a high current density of 10 mA/cm3. A plausible approach for creating energy storage devices with a high energy density and voltage window is presented in this study. © 2023, The Authors. All rights reserved.

关键词： Stability

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FDSOI NCFET with Stepped Thickness Ferroelectric Layer

FDSOI NCFET with Stepped Thickness Ferroelectric Layer

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Mingyuan Gu Jiafei Yao Yufeng Guo Maolin Zhang Qicong Liang Jiayi Wu Jincheng Liu Dongxiang Xu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Nanjing University of Posts and Telecommunications Nanjing China

In this work, a novel structure of FDSOI Negative Capacitance FET (NCFET) with Stepped Thickness Ferroelectric Layer (STFL) is proposed. The STFL forms an ununiform electrostatic potential distribution on the gate oxide, which modulates the electric characteristics of NCFET. The capacitances, transfer characteristics, output characteristics, and Sub-threshold Swing (SS) are investigated. The SS of STFL FDSOI NCFET can be reduced to 49mV/dec, shows a better performance when compared to the conventional FDSOI NCFET with equal ferroelectric layer.

关键词： Electric potential Simulation Capacitance-voltage characteristics Field effect transistors Silicon-on-insulator Logic gates Tools

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High Sensitivity and Ultrahigh Eqe (1040.13%) Ga2o3 Ultraviolet Photodetector by One-Step Thermal Oxidation of P-Gan Films

SSRN

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SSRN 2022年

作者： Wang, Jinjin Ji, Xueqiang Yan, Xu Lu, Chao Li, Zhitong Qi, Song Yan, Zuyong Li, Shan Qi, Xiaohui Zhang, Sai Hu, Shengrun Li, Peigang School of Integrated Circuits State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China

In this study, the Ga 2 O 3 thin films were successfully prepared by one-step thermal oxidation of p-GaN thin films, which were oxidized at 900 °C with varying oxidation times in the environment with argon-oxygen ratio of 1000. The effect of different oxidation durations on the physical properties of the Ga 2 O 3 thin films was studied, and particularly, the photoelectric performance of the Ga 2 O 3 thin films was further analyzed. The Ga 2 O 3 thin film thermally oxidized for 2 h has a single crystallographic orientation and excellent photoelectric performance. Compared with the GaN thin film, the dark current of the photodetector was approximately reduced by 2.31 × 10 4 times while the photocurrents of the device maintain the same order of magnitude, causing a large photo-to-dark current ratios (PDCRs) of 2.29 × 10 4 . The device exhibits impressive characteristics such as high responsivity of 2.13 A/W, super high external quantum efficiency (EQE) of 1040.13%, large detectivity (D*) of 1.65×10 11 Jones, and fast response speed of 0.218/0.112 s under UV light illumination of 254 nm wavelength at -5 V bias. The results indicate that the device can be used as a good candidate for high sensitivity, fast response and the high-resolution detection. © 2022, The Authors. All rights reserved.

关键词： Thin films

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Circularly Polarized Leaky Wave Antenna Based on Compound Left-Right-Hand Structure

Circularly Polarized Leaky Wave Antenna Based on Compound Le...

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International Conference on microwave and Millimeter Wave Technology Proceedings

作者： Huanyu Yin Pinyan Li Leilei Liu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781665434379

ISBN: (纸本)9781665434386

In this paper, a circularly polarized leaky wave antenna based on compound left-right-hand structure (CRLH) is proposed. In this design, the equivalent series capacitance is realized by the annular groove on the metal microstrip, and the parallel inductance is realized by the metal through hole. The antenna can realize frequency beam scanning in 14-18GHz and circular polarization in 15.5-18GHz.

关键词： microwave antennas Polarization microwave technology microwave integrated circuits Millimeter wave technology Metals Leaky wave antennas

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process

Design of a Broadband High Flatness Drive Amplifier Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than −12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers.

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The Role of Even Longitudinal Electric Field Distribution in Optimizing Carrier Transport Efficiency of Field-Effect Transistors

SSRN

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SSRN 2022年

作者： Zhang, Maolin Liu, Zeng Yang, Lili Yao, Jiafei Chen, Jing Zhang, Jun Wei, Wei Tang, Weihua Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China

Longitudinal electric field ( E L ) optimization is a widely applied approach to improve the carrier transport efficiency of semiconductor devices such as field-effect transistors (FETs). However, rigorous analysis to determine the optimal E L distribution remains a major challenge. By developing a physical model and investigating the impact of the E L distribution on the carrier transport efficiency, this work proves that an even E L distribution is the optimal case. To verify the model, FETs with various gate structures are designed and studied. The results show that the current driving capability of FETs can be improved by achieving a more uniform E L distribution along the channel direction. In addition, the use of multi-material gate architecture can produce a quasi-even E L distribution and thus performs the greatest current performance. Besides, various FET structures that feature the even E L distribution are discussed as well. More importantly, our results show that the constant- E L scaling can be implemented via the even E L , which exhibits potential in relieving the threshold voltage shift and achieving the maximum current performance. © 2022, The Authors. All rights reserved.

关键词： Field effect transistors

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Corrigendum to ‘Mist CVD technology for gallium oxide deposition: A review’ [Mater. Today Phys. 49(2024) 101604]

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Materials Today Physics 2025年 50卷

作者： Suhao Yao Yifan Yao Maolin Zhang Xueqiang Ji Shan Li Weihua Tang Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China

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