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SSRN 2022年

作者： Zhang, Maolin Liu, Zeng Yang, Lili Yao, Jiafei Chen, Jing Zhang, Jun Wei, Wei Tang, Weihua Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China

Longitudinal electric field ( E L ) optimization is a widely applied approach to improve the carrier transport efficiency of semiconductor devices such as field-effect transistors (FETs). However, rigorous analysis to determine the optimal E L distribution remains a major challenge. By developing a physical model and investigating the impact of the E L distribution on the carrier transport efficiency, this work proves that an even E L distribution is the optimal case. To verify the model, FETs with various gate structures are designed and studied. The results show that the current driving capability of FETs can be improved by achieving a more uniform E L distribution along the channel direction. In addition, the use of multi-material gate architecture can produce a quasi-even E L distribution and thus performs the greatest current performance. Besides, various FET structures that feature the even E L distribution are discussed as well. More importantly, our results show that the constant- E L scaling can be implemented via the even E L , which exhibits potential in relieving the threshold voltage shift and achieving the maximum current performance. © 2022, The Authors. All rights reserved.

关键词： Field effect transistors

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Optimization of Creep Constitutive Modeling of Lead-Free Solder Using Gene Expression Programming Methods

Optimization of Creep Constitutive Modeling of Lead-Free Sol...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Wei Chen Xu He Xiaowei Xu Lu Liu Department of physics Nanjing University of science and technology Nanjing China Research Institute of Physical and Chemical Engineering of Nuclear Industry Tianjin China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this paper, the GEP method is utilized to derive an ontological model for creep data, focusing on the mechanical properties and structural deformation mechanisms of solder at different scales. By analyzing the effect of micro-and meso-structural morphology on the material, experimental validation is provided for the construction of an ontological model that depicts the viscoplasticity of Pb- Free solder in detail. Iterative optimization of a larger population of experimental samples will drive the development of a fine-grained intrinsic model that will be supported by solid theoretical and empirical evidence, advancing the field towards deeper understanding and innovation. In this study, the GEP algorithm is used to fit the intrinsic model of solder creep and is shown to have good fitting results. The advantages of GEP in equation model fitting are the simplicity of its heuristic algorithm, the ease of its implementation and its good optimization results. In addition, GEP is highly flexible, adaptable and robust to noisy data. After comparing the experimental data simulations, it is found that GEP is able to accurately analyze and predict in the establishment and optimization of creep model, which brings an important contribution to the field of solder research.

关键词： Adaptation models Analytical models Creep Lead Programming Predictive models Prediction algorithms

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A SAR ADC-based Temperature Sensor in BCS O.18μm technology

A SAR ADC-based Temperature Sensor in BCS O.18μm Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yihua Liu Yang Wang Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Nanjing Vocational University of Industry Technology Nanjing China Silicon Austria Labs Austria State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a SAR ADC-based temperature sensor in $0.18\mu m$ . In order to expand the temperature measurement range, the improved TSPC register is used in the SAR logic circuit. Meanwhile, the segmented capacitor structure is adopted to reduce the chip area, while the dynamic matching technology is used to reduce the influence of component mismatch on the accuracy. The post-simulation results show that the temperature measurement range of the temperature sensor is -150 ° C-200 ° C, and the temperature measurement accuracy is -3-+4 °C.

关键词： Temperature measurement Temperature sensors microwave measurement microwave integrated circuits Power demand Millimeter wave technology Millimeter wave measurements

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Resource allocation for indoor self-blockage WmWave device-to-device communications

TechRxiv

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TechRxiv 2020年

作者： Wang, Lei Yu, Xiaoting Zheng, Baoyu Yao, Jiming Gui, Guan National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China National Mobile Communications Research Laboratory Southeast University Nanjing210096 China Global Energy Interconnection Research Institute Co. Ltd. Beijing100031 China

Millimeter wave (mmWave) technology can meet the requirements of large amount of data communications among intelligent devices for indoor scenario. With high requirement of throughput, reducing interference in an enclosed region is still a challenge. For indoor scenario, the human bodies are considered as the main blockages besides conventional blockages. In this paper, we present a new system model by exploiting the self-blockage model to capture the effects of human body, while using multi-ball Line of Sight (LOS) link state model to describe the conventional blockage. The combination of the two components provides a more comprehensive and accurate expression of indoor obstruction. We give a closed expression of coverage rate to analyze the system performance. Simulation results show that the proposed model is highly accurate to describe the distribution of blockages for indoor case. Then, we formulate the resource allocation as an optimization problem under this scenario. The target of this optimization is to achieve the maximum throughput by minimizing interference. To reach this goal, an improved Powell Multi Vertex Coloring algorithm (PMVC) is proposed. The throughput raises apparently when we modify this scheme to put more flows in different time-slots evenly. Numerical experiments show that the improved algorithm can achieve higher system throughput than traditional greedy algorithm and Powell Vertex Coloring (PVC) scheme. © 2020, CC BY.

关键词： Millimeter waves

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A Compact Low-Loss Bi-directional Amplifier for Ku-band

A Compact Low-Loss Bi-directional Amplifier for Ku-band

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jie Lin Xiang Liao Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200*200 $\mu \mathbf{m}^{\mathbf{2}}$, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars.

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Design of a Broadband Miniaturized Filter Power Amplifiers

Design of a Broadband Miniaturized Filter Power Amplifiers

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Xiang Liao Jingjing Huang Shu Ying Shanwen Hu Zixuan Wang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers.

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network

A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781665482271

Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to reconstruct high quality images in real time, this paper presents a hybrid method which combines the Born iterative Gaussian mixture model generalized approximate message passing (BI-GMM-GAMP) algorithm with a convolutional neural network (CNN). To be specific, BI-GMM-GAMP is first used for obtaining the preliminary images. Subsequently, these pictures are used for training U-Net. Experiments show the validity of this method.

关键词： Training Inverse problems Message passing Electromagnetic scattering Approximation algorithms Real-time systems Convolutional neural networks

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： microwave integrated circuits Power demand Pipelines Layout Voltage microwave circuits Calibration

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