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5th IEEE International Conference on Computational Electromagnetics, ICCEM 2019

作者： Zheng, Kai-Lai Chu, Peng Kong, Wei-Bin Xu, Feng College of Electronic and Optical Engineer Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology China State Key Lab. of Millimeter Waves Southeast University Nanjing210096 China College of Information Engineering Yancheng Insitute of Technology Yancheng China

ISBN: (纸本)9781538671115

In this paper, a new nonoverlapping domain decomposition (DD) scheme is built for solving EM scattering from penetrable targets. The Rao-Wilton-Glisson(RWG) basis functions are used to expand the equivalent surface electric/magnetic current on the entire surface. Each full RWG basis function across some boundary curve is split into two half-RWG basis functions. The global MoM matrix equation is then combined with the sparse matrix equation determined by the boundary electric/magnetic current continuity to form the complete model equation. In this DD scheme, when solving each subdomain, only part of the matrix needs to be stored into memory, and then the memory requirement is significantly reduced. Numerical examples are provided to demonstrate the validity of the proposed method. © 2019 IEEE.

关键词： Electromagnetic wave scattering

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3-D absorptive frequency selective reflector based on slotlines

3-D absorptive frequency selective reflector based on slotli...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Zhang, Yixiong Zhao, Xuankai Li, Bo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China

ISBN: (纸本)9781538663462

This paper presents an absorptive frequency selective reflector (AFSR), which exhibits a flat reflection characteristic with absorption at the both sides of the reflection band. This structure formed in planar slotline structures is mainly inclusive of one lossless resonator and two lossy resonators, which are responsible for one reflection band and two absorption bands respectively. In order to minimize the coupling of these three resonators, metallic plates are utilized to make these three resonators separated. In this paper, equivalent circuit model (ECM) based on transmission line theory is introduced to describe the design concept. Then, the realization of specified structure is provided, where a good agreement of reflection coefficient results between EM simulation and ECM is achieved. The proposed AFSR features stable performance under oblique incident angles up to 40°. © 2018 IEEE.

关键词： Resonators

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A Novel microstrip Patch Antenna with Bandwidth Enhancement

A Novel Microstrip Patch Antenna with Bandwidth Enhancement

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International Symposium on Antennas and Propagation (ISAP)

作者： Wei Dai Yiming Tang Zhaojun Chu Jinpeng Xu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts & Telecommunications Nanjing Jiangsu P.R. China

A novel microstrip patch antenna with bandwidth enhancement is proposed in this paper. Based on the structure of the traditional microstrip patch antenna, the proposed antenna adds an impedance matching network to broaden bandwidth and achieve lower return loss. Adding a parasitic patch near the original patch, the antenna bandwidth is further expanded and the radiation characteristics of the antenna can be improved. The simulated impedance bandwidth of 16.7% (14~16.5 GHz) can be obtained and the gain in the range of bandwidth is mostly above 6 dB. The proposed antenna enjoys good impedance matching and stable gain, which make it suitable for modern communication systems, satellite communications and some control systems.

关键词： Bandwidth microstrip antennas Patch antennas microstrip Gain Impedance matching

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Static thermal simulation of heterogeneous inp-slicon 3d IC stack

Static thermal simulation of heterogeneous inp-slicon 3d IC ...

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2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

作者： Yang, Yanhui Zhang, Yi Yang, Lei Li, Xiaopeng Zhang, Youtao Liu, Zhonghua Guo, Yufeng College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China

ISBN: (纸本)9781728102863

Diverse accessible heterogeneous integration (DAHI) a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated with vertical heterogeneous interconnection (HIC) structures. It is natural an extension of three-dimensional integrated chips and advanced complete system in a package (SIP). Despite its enormous potential and advantages, thermal management is the biggest challenge in heterogeneous integration. In this paper, the thermal conduction in heterogeneous integration of InP and Si is researched by using the finite element method. The simulation results show that four HICs is enough for a signal hot spot in a limit area. Two-row configuration is the best tradeoff between HIC number and the thermal management in the HIC matrix. The static thermal simulation can guide the design of circuit layout in the later stage, such as the number and distribution of InP devices and HICs. © 2019 IEEE.

关键词： Indium phosphide

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A 32.2-GHz Full Adder in InP DHBT technology

A 32.2-GHz Full Adder in InP DHBT Technology

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IEEE International Workshop on Radio-Frequency integration technology (rfIT)

作者： Yi Zhang Xiaopeng Li Youtao Zhang Ying Zhang Yufeng Guo Zhonghua Liu Hao Gao National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China JiangSu HengXin Technology Co. Ltd Yixing China Eindhoven University of Technology Eindhoven Netherlands

An ultra-high speed 1bit full adder based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology is presented. The synchronous latch is combined with adding operation to improve the calculation speed. A single-level parallel-gated circuit is designed using majority decision algorithm to reduce the power consumption. Measurement results show that the maximum clock frequency of the full adder is 32.2-GHz, and the overall power consumption is 350mW.

关键词： Adders Latches Indium phosphide III-V semiconductor materials DH-HEMTs Power demand Frequency measurement

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Performance Variability and Analog Behaviors of Memristive Devices with New Transition Metal Carbide

Performance Variability and Analog Behaviors of Memristive D...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Fei Gao Yihao Chen Yuefeng Li Miaocheng Zhang Yu Wang Nan He Xinyi Shen Ertao Hu Xiang Wan Xiao Gong Yufeng Guo Xiaojuan Lian Yi Tong College of Electronic and Optical Engineering & College of Microelectronics National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing University of Posts and Telecommunications Nanjing China National University of Singapore Singapore

ISBN: (纸本)9781728135533

Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.

关键词： learning (artificial intelligence) memristors neural nets Memristors Neural network Transition metal carbides transition metal Artificial neural networks New families Electrical Synapses STT3A gene THICK MOULDING COMPOUND performance boost

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Ultrasensitive Mass Sensing with a Nanomechanical Transistor 19

Ultrasensitive Mass Sensing with a Nanomechanical Transistor

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19th IEEE International Conference on Communication technology, ICCT 2019

作者： Chang, Yue-Xin Bai, Rui-Xin Zhang, Guo-Lin Liu, Yu-Qi Sun, Ke-Xue Nanjing University of Posts and Telecommunications College of Electronic and Optical Engineering Nanjing210003 China Nanjing University of Posts and Telecommunications College of Telecommunications Information Engineering Nanjing210003 China Radiofrequency Integration and Micro Assembly Technology National and Local Joint Engineering Lab Nanjing Jiangsu210003 China

ISBN: (纸本)9781728105352

A novel mass sensor based on the nanomechanical transistor is designed. Based on giving the dynamic structure model, the transfer equations of the coupled mechanical part and the charge part are listed. Their parameters are obtained through experiments, and the dynamic displacement, velocity, and charge shuttle are numerically analyzed. Furthermore, the relationship between current changes of a passive beam with sensed mass is studied, proving the sensor's capability in detecting a small mass. Ultimately, the simulation results show that in this way can we get a mass sensor with high-quality sensitivity. The sensor's working range is in the 10-21 kilogram(zg) range. © 2019 IEEE.

关键词： high sensitivity mass sensor nanomechanical transistor

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Leaky Wave Antenna Based on Composite Right/Left Handed Half-mode Substrate Integrated Waveguide

Leaky Wave Antenna Based on Composite Right/Left Handed Half...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yangbin Jiang Leilei Liu Yangjun Hu Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing Jiangsu China

In this paper, we propose a half-mode substrate integrated waveguide (HMSIW) leaky wave antenna (LWA) based on composite right/left handed (CRLH) transimission line (TL). The unit cell of the proposed antenna consists of two vertical slots on the microstrip and two metal vias. The equivalent series capacitance and the equivalent shunt inductance in the CRLH structure are realized by vertical slots and two vias, respectively. We simulated the unit cell and the proposed antenna. The antenna can achieve continuously wide beam scanning from backward to forward. The beam scanning angles from -50 degrees to 30 degrees.

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Type-printable photodetector arrays for multichannel meta-infrared imaging

arXiv

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arXiv 2021年

作者： Guo, Junxiong Gu, Shuyi Lin, Lin Liu, Yu Cai, Ji Cai, Hongyi Tian, Yu Zhang, Yuelin Zhang, Qinghua Liu, Ze Zhang, Yafei Gong, Tianxun Zhang, Xiaosheng Bi, Lei Lin, Yuan Huang, Wen Gu, Lin Zhang, Jinxing School of Electronic Information and Electrical Engineering Institute of Advanced Study Chengdu University Chengdu610106 China School of Integrated Circuit Science and Engineering National Exemplary School of Microelectronics University of Electronic Science and Technology of China Chengdu610054 China School of Integrated Circuits Tsinghua University Beijing100084 China The College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China Department of Physics Beijing Normal University Beijing100875 China Institute of Physics Chinese Academy of Science Beijing National Laboratory of Condensed Matter Physics Beijing100190 China School of Materials Science and Engineering Tsinghua University Beijing100084 China

Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently, high-performance multichannel infrared imaging systems typically consist of separate detector arrays and gratings or multi-camera integration, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present a novel approach for printable graphene plasmonic photodetector arrays with zero-bias operation driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses by directly rescaling the ferroelectric superdomain instead of reconstructing the gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and hold great potential for applications in efficient edge detection in human-brain-type machine vision. © 2021, CC BY.

关键词： Photons

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A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

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