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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Xiang Liao Jingjing Huang Shu Ying Shanwen Hu Zixuan Wang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers.

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Automatic Design of Structural Parameters for GaN HEMT Using Genetic Algorithm and Artificial Neural Networks

Automatic Design of Structural Parameters for GaN HEMT Using...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Wei Du Jing Chen Jiahao Wu Qing Yao Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China The National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

In this paper, an automatic optimization technique of structural parameters for gallium nitride high-electron-mobility transistors (GaN HEMT) is proposed. Given the design targets, including breakdown voltage (BJI) and specific on-resistance (R on,sp ), this technique can provide the structural parameters of GaN HEMT to meet the targets based on automatic iteration and optimize process using artificial neural networks (ANN) and genetic algorithms (GA). The results show that, when evaluated through technology computer-aided design (TCAD) simulations, designs obtained from the proposed technique deviate from the expected specifications by 2.6% and 0.98%, respectively. Additionally, the efficiency of the proposed method is reflected in its runtime, with the automated design time for each case is within 2 minutes. We believe that the design approach is crucial in accelerating the design closure for GaN transistors.

关键词： Performance evaluation Design automation Runtime Artificial neural networks HEMTs Structural engineering Transistors

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Machine Learning-Based Performance Prediction Model Optimization for Soi Ldmos Using Adaptive Small Space Dataset

Machine Learning-Based Performance Prediction Model Optimiza...

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China Semiconductor technology International Conference (CSTIC)

作者： Jinwen You Jing Chen Qing Yao Yuxuan Dai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China the National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

This work proposes an adaptive small space dataset generation approach to improve the ML-based model. By leveraging radial basis function (RBF) kernel to calculate similarity to the target structure, small space training data sets with high similarity are filtered for model training. The numerical results show that the small space model can not only improve the performance prediction accuracy, but also accelerate the model testing process. Meanwhile, the memory requirements during the training process are significantly reduced. In addition, the accuracies of small space models using different algorithms also demonstrate the robustness of the proposed method.

关键词： Training Adaptation models Training data Life estimation Predictive models Prediction algorithms Robustness

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Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability

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IEEE Transactions on Electron Devices 2022年第5期69卷 2443-2448页

作者： Shan Li Zu-Yong Yan Jin-Cheng Tang Jian-Ying Yue Zeng Liu Pei-Gang Li Yu-Feng Guo Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science and the State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successfully constructed on the all-oxide Ga 2 O 3 /V 2 O 5 thin-film heterojunction. With a type-I straddling band alignment, the Ga 2 O 3 /V 2 O 5 heterostructure demonstrated an obvious photovoltaic effect with an open-circuit voltage of 0.4 V. The large bandgap (5.01 eV) of $\beta $ -Ga 2 O 3 and the effective electron–hole pair separation within heterointerface produced a superhigh solar-blind spectral discriminability for the Ga 2 O 3 /V 2 O 5 heterojunction PD, with deep-ultraviolet (DUV)/visible rejection ratio ( ${R}_{{240}}/{R}_{{400}}$ ) of 6.0 $\times 10^{{4}}$ , photo-to-dark current ratio (PDCR) of $2.6 \times 10^{{7}}$ , on/off switching ratio of $1.87\times 10^{{5}}$ , and specific detectivity of 7.8 $\times 10^{{13}}$ Jones. The largest responsivities in self-powered mode (0 V) and power-supply mode (−5 V) were 19.8 and 79.2 mA/W, respectively. The excellent self-powered photodetection performance of Ga 2 O 3 /V 2 O 5 oxide heterojunction provides a new strategy for next-generation energy-conservation solar-blind PDs.

关键词： Heterojunctions Absorption Photonic band gap Optical device fabrication X-ray scattering Vanadium Photodetectors

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network

A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781665482271

Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to reconstruct high quality images in real time, this paper presents a hybrid method which combines the Born iterative Gaussian mixture model generalized approximate message passing (BI-GMM-GAMP) algorithm with a convolutional neural network (CNN). To be specific, BI-GMM-GAMP is first used for obtaining the preliminary images. Subsequently, these pictures are used for training U-Net. Experiments show the validity of this method.

关键词： Training Inverse problems Message passing Electromagnetic scattering Approximation algorithms Real-time systems Convolutional neural networks

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： microwave integrated circuits Power demand Pipelines Layout Voltage microwave circuits Calibration

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process

Design of a Broadband High Flatness Drive Amplifier Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than −12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers.

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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

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Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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