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检索条件"机构=National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology"
133 条 记 录,以下是111-120 订阅
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A Compact Low-Loss Bi-directional Amplifier for Ku-band
A Compact Low-Loss Bi-directional Amplifier for Ku-band
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International Conference on Integrated Circuits and microsystems (ICICM)
作者: Jie Lin Xiang Liao Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China
Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifi...
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Design of a Broadband Miniaturized Filter Power Amplifiers
Design of a Broadband Miniaturized Filter Power Amplifiers
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International Conference on Integrated Circuits and microsystems (ICICM)
作者: Xiang Liao Jingjing Huang Shu Ying Shanwen Hu Zixuan Wang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China
In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this pap...
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Automatic Design of Structural Parameters for GaN HEMT Using Genetic Algorithm and Artificial Neural Networks
Automatic Design of Structural Parameters for GaN HEMT Using...
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Electronics Design Automation (ISEDA), International Symposium of
作者: Wei Du Jing Chen Jiahao Wu Qing Yao Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China The National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China
In this paper, an automatic optimization technique of structural parameters for gallium nitride high-electron-mobility transistors (GaN HEMT) is proposed. Given the design targets, including breakdown voltage (BJI) an... 详细信息
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Machine Learning-Based Performance Prediction Model Optimization for Soi Ldmos Using Adaptive Small Space Dataset
Machine Learning-Based Performance Prediction Model Optimiza...
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China Semiconductor technology International Conference (CSTIC)
作者: Jinwen You Jing Chen Qing Yao Yuxuan Dai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China the National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China
This work proposes an adaptive small space dataset generation approach to improve the ML-based model. By leveraging radial basis function (RBF) kernel to calculate similarity to the target structure, small space train... 详细信息
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Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability
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IEEE Transactions on Electron Devices 2022年 第5期69卷 2443-2448页
作者: Shan Li Zu-Yong Yan Jin-Cheng Tang Jian-Ying Yue Zeng Liu Pei-Gang Li Yu-Feng Guo Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science and the State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China
Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successful... 详细信息
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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology
A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology
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International Conference on microwave and Millimeter Wave technology Proceedings
作者: Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT... 详细信息
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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network
A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...
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International Conference on microwave and Millimeter Wave technology Proceedings
作者: Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China
Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to r... 详细信息
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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology
Design of A 0.5~50GHz Differential Distributed Amplifier Bas...
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International Conference on microwave and Millimeter Wave technology Proceedings
作者: Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the... 详细信息
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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology
A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...
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International Conference on microwave and Millimeter Wave technology Proceedings
作者: Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process
Design of a Broadband High Flatness Drive Amplifier Based on...
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International Conference on Integrated Circuits and microsystems (ICICM)
作者: Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China
In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on ...
来源: 评论