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6th International Conference on Electronics technology, ICET 2023

作者： Xu, Xun Yang, Hang Zou, Jing Cai, Zhikuang He, Lin Nanjing University of Posts and Telecommunication National and Local Jiont Engineering Laboratory of Rf Intergration and Micro-assembly Technology College of Integrated Circuit Secience and Engineering Nanjing China

ISBN: (纸本)9798350337693

In this paper, a high security encryption circuit based on ring oscillator PUF and secure scan chain is proposed. The circuit is composed of three parts: self-reference ring oscillator, test vectors input and decision module and secure scan chain circuit. The key protection is divided into two stages. In the key generation period, the unique identification information of the chip is generated by a self-reference ring oscillator. In the key transmission phase, the XOR value of the correct scan test vectors and the obfuscation vectors generated by the linear feedback shift register are input into the secure scan chain, which further obfuscates the data. Compared with conventional schemes, the area of the proposed self-reference ring oscillator PUF is effectively reduced. In this event, the innovative combination of PUF and secure scan chain proposed in this paper have limited area to a certain extent, and greatly improved the security. The probability of cracking the key is merely (1/32 !)4 1 2n ∗ 2)256 ∗ 2} 12n. © 2023 IEEE.

关键词： Cryptography

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A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

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Chinese Physics B 2023年第4期32卷 605-612页

作者：杨莉莉彭宇思刘增张茂林郭宇锋杨勇唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)*** results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV ***,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and *** zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,*** general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

关键词： Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction UV photodetector self-powered operation

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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An Active Gate Driver with Controllable Gate Current for SiC MOSFETs

An Active Gate Driver with Controllable Gate Current for SiC...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Zhengfei Jiang Jiafei Yao Yuxuan Dai Ziwei Hu Man Li Yi Zhang Zixuan Wang Zhikuang Cai Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798331509453

ISBN: (纸本)9798331520243

An active gate driver (AGD) with controllable gate current (CGC) for SiC MOSFETs is proposed to reduce voltage overshoots and current overshoots. In the CGC-AGD, the controllable current overshoot suppression circuit and voltage overshoot suppression circuit are designed to control the rate of changes in current (di/dt) and voltage (dv/dt) to effectively reduce overshoots. Meanwhile, the current conversion circuit and the push-pull amplifier circuit compensate for the current reduction resulting from the overshoot suppression. This paper simulated the current and voltage overshoot during the switching process based on a double pulse test set up with a 1200V SiC MOSFET by LTspice software. The simulation results show that the current overshoot was reduced by 60% and the voltage overshoot was reduced by 22% when compared to the conventional gate driver (CGD). While compared with the AGD circuit, the current overshoot of CGC-AGD is reduced by 26% and the voltage overshoot is reduced by 19%. These results demonstrate that the CGC-AGD has better suppress on current and voltage overshoot.

关键词： micromechanical devices Integrated circuits MOSFET Silicon carbide Simulation Switches Logic gates Gate drivers Software Voltage control

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Dramatic reduction in dark current ofβ-Ga_(2)O_(3) ultraviolet photodectors viaβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation

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Chinese Physics B 2023年第1期32卷 415-420页

作者：岳建英季学强李山岐晓辉李培刚吴真平唐为华 Laboratory of Optoelectronics Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210046China

Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based onβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) film grown by metal-organic chemical vapor *** was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers,resulting in low switching ratio and low responsivity of the *** this work,β-(Al_(0.25)Ga_(0.75))_(2)O_(3) films are used as surface passivation *** to its wide band gap,we obtain excellent light transmission and high lattice matching withβ-Ga_(2)O_(3).We explore the change and mechanism of the detection performance of theβ-Ga_(2)O_(3) detector afterβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface *** is found that under the illumination with 254 nm light at bias 5 V,theβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3)photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10^(5).The dark current is sharply reduced about 50 times after passivation of theβ-Ga_(2)O_(3) surface,and current on/off ratio increases by approximately 2 *** is obvious thatβ-Ga_(2)O_(3) detectors withβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation can offer superior detector performance.

关键词： β-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) MOCVD photodetectors defect passivation

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A Survey of Chips Security technology Based on Scan Chain

A Survey of Chips Security Technology Based on Scan Chain

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Zou, Jing Cai, Zhikuang Xu, Xun Yang, Hang Guo, Yufeng National and Local Jiont Engineering Coll. of Intgd. Circuit Secience and Engineering Nanjing University of Posts and Telecommunications Laboratory of RF Intergration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350304510

Scan chain insertion is a widely used technique in design for testability (DFT), which brings high fault coverage, good controllability and observability to chip testing. But for the encryption chip, the attacker can use the scan chain to carry out side channel attack on the chip, and leak the encrypted data in the chip. In order to ensure the security of the chip, scholars in this field have done a lot of research. They exposed the attackers against the AES hardware encryption algorithm attack methods, and put forward a series of corresponding security countermeasures, such as complex DFT structure, modify scan chain structure, scan I/O restriction and so on. In this paper, we deeply analyze and summarize the attack methods and security countermeasures commonly used at present, compares their advantages and disadvantages and limitations, and briefly analyze the development of secure DFT technology in the future. © 2023 IEEE.

关键词： Design for testability

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process 8

Design of a Broadband High Flatness Drive Amplifier Based on...

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Huang, Jingjing Lin, Jie Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than -12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers. © 2023 IEEE.

关键词： Equalizers

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Wideband Conformal Antenna Integrated with Lens for Implantable Capsule System 4

Wideband Conformal Antenna Integrated with Lens for Implanta...

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4th International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2021

作者： Xu, Li-Jie Ma, Zhen-Yu Wu, Zhe National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781733509619

This paper presents a conformal antenna integrated with lens for wireless capsule endoscopy applications. Flexible and biocompatible material polyimide is used as capsule wall for human safety issues. To save the inner space of capsule, the proposed antenna is placed inside the capsule, with its radiation patch attached to the capsule cap in conformal form. Besides, the radiation patch is designed in bowtie shape, with one arm shorted to the ground and the other arm fed by coaxial cable. In this way, quarter wavelength resonance is realized with wide bandwidth. Additionally, to meet the application requirement, a hemispherical lens is taken into consideration and placed in capsule cap below the antenna patch. Finally, the simulation result shows that a wide bandwidth of 97.9% can be obtained of this integrated design. © 2021 Applied Computational Electromagnetics Society (ACES).

关键词： Slot antennas

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Dual-linear polarized array with 9.3:1 Bandwidth and 50° scanning 4

Dual-linear polarized array with 9.3:1 Bandwidth and 50° sc...

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4th International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2021

作者： Wu, Zhe Zhang, Congtian Xu, Lijie National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A dual-linear polarized tightly coupled dipole array (TCDA) is presented with a 9.3:1 bandwidth for voltage standing wave ratio (text{VSWR}) © 2021 Applied Computational Electromagnetics Society (ACES).

ISBN: (纸本)9781733509619

关键词： Bandwidth

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Design of a Broadband Miniaturized Filter Power Amplifiers 8

Design of a Broadband Miniaturized Filter Power Amplifiers

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Liao, Xiang Huang, Jingjing Ying, Shu Hu, Shanwen Wang, Zixuan Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers. © 2023 IEEE.

关键词： Efficiency

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