检索结果-内蒙古大学图书馆

Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga_(2)O_(3)heterojunction by trapping effect

Science China(Technological Sciences) 2022年第3期65卷 704-712页

作者： LI Shan YUE JianYing LU Chao YAN ZuYong LIU Zeng LI PeiGang GUO DaoYou WU ZhenPing GUO YuFeng TANG WeiHua Laboratory of Information Functional Materials and Devices School of ScienceState Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is ***,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid *** adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered *** the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;*** better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier *** the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.

关键词： oxygen vacancy self-powered photodetector heterojunction PEDOT:PSS/ε-Ga2O3

来源：评论

学校读者我要写书评

暂无评论

Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS

Tradeoff Between the Breakdown Voltage and Specific On-Resis...

引用

International Conference on ASIC

作者： Yufeng Guo Kemeng Yang Jing Chen Man Li Zhengfei Jiang Jiafei Yao Jun Zhang Maolin Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The tradeoff between the breakdown voltage (BV) and specific on-resistance (R on,sp ) is an important issue for the power device. Baliga’s Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship. However, the strong 2-D effect is not considered in the conventional BFOM and the present silicon limit. In this paper, a new BFOM model of SOI RESUrf LDMOS is proposed based on the formulized 2-D electric field in the drift region. Then, the device structure parameters are optimized to maximize the BFOM. A novel silicon limit and critical electric field are also derived. The differences between the lateral and the vertical devices are investigated and compared. The mechanism is discussed. The simulation based on the TCAD tool is employed to verify the novel BFOM and silicon limit.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network

A Scalable Model for On-Chip Interdigital Capacitor Based on...

引用

International Conference on Integrated Circuits and microsystems (ICICM)

作者： Yuqing Xiong Siqing Guo Shanwen Hu Yan Gu Yuming Fang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (数字)9798331509453

ISBN: (纸本)9798331520243

A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditional series equivalent circuit into a $\pi$ -type structure and adding a series network of resistor and capacitor to characterize the coupling effect, the variation of the equivalent series resistance (ESR) and S-parameter with frequency can be effectively predicted. According to the mathematical equation, the value of each component for the $1\text{-}\pi$ equivalent circuit model can be quickly and correctly obtained. In order to effectively improve the prediction accuracy and convergence speed of neural network, Particle Swarm Optimization (PSO) and Levenberg-Marquardt Back Propagation (LMBP) are used to select and optimize the weights and thresholds of the neural networks. Compared with the traditional neural network model, the proposed SMNN reduces the number of neurons required to map the input-output nonlinear relationship, so that the modeling time is only reduced to $10 \sim 15$ seconds, and the test data accuracy is good.

关键词： Resistance Accuracy Capacitors Predictive models Prediction algorithms System-on-chip Scattering parameters Integrated circuit modeling Biological neural networks Equivalent circuits

来源：评论

学校读者我要写书评

暂无评论

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

引用

14th International Conference on microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

来源：评论

学校读者我要写书评

暂无评论

High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

引用

Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

来源：评论

学校读者我要写书评

暂无评论

Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

引用

Science China(Technological Sciences) 2024年第11期67卷 3477-3484页

作者： YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical ***,we construct a high-performance Ga_(2)O_(3)photodetector realized by *** high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated ***,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

关键词： Ga_(2)O_(3) back-illuminated solar-blind photodetector

来源：评论

学校读者我要写书评

暂无评论

基于预连接镍链的高应变敏感度动态可调电磁干扰屏蔽弹性体

引用

Science China Materials 2024年第2期67卷 629-641页

作者：卞敬周兴成周翔马林峰朱先军李建民刘淑娟赵强 College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽... 详细信息

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽性能的弹性体材料.弹性体在机械拉伸和释放过程中表现出连续和可逆的电磁干扰屏蔽性能.原始弹性体具有良好的阻抗匹配和低介电损耗,允许大部分电磁波通过.拉伸使预连接的短链彼此接触,在内部形成大量的微尺度导电网络,显著增强了电导损耗能力,实现了较强的电磁干扰屏蔽能力.此外,我们通过无线应变传感系统验证了智能电磁干扰屏蔽弹性体的应用潜力,证明了可穿戴智能电磁干扰屏蔽精确监测人体运动的可能性.

关键词： adjustable electromagnetic interference shielding conductive elastomer electromagnetic sensing negative piezoresistivity

来源：评论

学校读者我要写书评

暂无评论

Static thermal simulation of heterogeneous inp-slicon 3d IC stack

Static thermal simulation of heterogeneous inp-slicon 3d IC ...

引用

2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

作者： Yang, Yanhui Zhang, Yi Yang, Lei Li, Xiaopeng Zhang, Youtao Liu, Zhonghua Guo, Yufeng College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China

ISBN: (纸本)9781728102863

Diverse accessible heterogeneous integration (DAHI) a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated with vertical heterogeneous interconnection (HIC) structures. It is natural an extension of three-dimensional integrated chips and advanced complete system in a package (SIP). Despite its enormous potential and advantages, thermal management is the biggest challenge in heterogeneous integration. In this paper, the thermal conduction in heterogeneous integration of InP and Si is researched by using the finite element method. The simulation results show that four HICs is enough for a signal hot spot in a limit area. Two-row configuration is the best tradeoff between HIC number and the thermal management in the HIC matrix. The static thermal simulation can guide the design of circuit layout in the later stage, such as the number and distribution of InP devices and HICs. © 2019 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

Application of Machine Learning Method in the Modeling and Designing of Semiconductor Power Devices 16

Application of Machine Learning Method in the Modeling and D...

引用

16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Guo, Yufeng Chen, Jing Zhang, Jun Yao, Qing Dai, Yuxuan Guo, Bin Xia, Renji Zhang, Maolin Li, Man Yao, Jiafei 1College of Integrated Circuit Science and Engineering Nanjing University of Postsand Telecommunications Nanjing 210023 China 2National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

With the constantly innovating of power integrated circuits, the design and analysis of semiconductor devices are getting more crucial, yet more challenging. Alongside, recent advances in machine learning(ML) technology have exhibited extraordinary potential in power device designing and modeling, as which is capable of achieving efficient but accurate performance prediction and device design. This paper presents a unique analysis from the following two aspects according to the task properties, including performance modeling and design automation. The results show that the ML techniques have been utilized to improve the efficiency with expected accuracy;hence, paving another direction for the intelligent semiconductor device design. © 2022 IEEE.

关键词： Computer aided design

来源：评论

学校读者我要写书评

暂无评论

A 32.2-GHz Full Adder in InP DHBT technology

A 32.2-GHz Full Adder in InP DHBT Technology

引用

IEEE International Workshop on Radio-Frequency integration technology (rfIT)

作者： Yi Zhang Xiaopeng Li Youtao Zhang Ying Zhang Yufeng Guo Zhonghua Liu Hao Gao National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China JiangSu HengXin Technology Co. Ltd Yixing China Eindhoven University of Technology Eindhoven Netherlands

An ultra-high speed 1bit full adder based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology is presented. The synchronous latch is combined with adding operation to improve the calculation speed. A single-level parallel-gated circuit is designed using majority decision algorithm to reduce the power consumption. Measurement results show that the maximum clock frequency of the full adder is 32.2-GHz, and the overall power consumption is 350mW.

关键词： Adders Latches Indium phosphide III-V semiconductor materials DH-HEMTs Power demand Frequency measurement

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：