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6th International Conference on Information Communication and Signal Processing, ICICSP 2023

作者： Liu, Shiqi Li, Bing Zhao, Bo Huang, Lei Sun, Weize Chen, Long Huang, Min Bao, Weimin University of Electronic Science and Technology of China Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro Assembly Technology Nanjing China Southeast University State Key Laboratory of Millimeter Waves Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

ISBN: (纸本)9798350339994

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization. © 2023 IEEE.

关键词： analog to digital converter harmonic one-bit quantization quantization noise

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Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga_(2)O_(3)heterojunction by trapping effect

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Science China(Technological Sciences) 2022年第3期65卷 704-712页

作者： LI Shan YUE JianYing LU Chao YAN ZuYong LIU Zeng LI PeiGang GUO DaoYou WU ZhenPing GUO YuFeng TANG WeiHua Laboratory of Information Functional Materials and Devices School of ScienceState Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is ***,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid *** adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered *** the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;*** better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier *** the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.

关键词： oxygen vacancy self-powered photodetector heterojunction PEDOT:PSS/ε-Ga2O3

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Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation

Investigation of Lateral Gallium Oxide MOSFET with Discrete ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lei Wang Maolin Zhang Zeng Liu Lili Yang Shan Li Weihua Tang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Innovation Center for Gallium Oxide Semiconductor (IC-GAO) Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The main barrier preventing the simulation design and optimization of wide bandgap semiconductor power devices is poor numerical convergence. Currently, the uncalibrated two-dimensional electric field distribution is the main foundation for the breakdown voltage optimization of gallium oxide power devices. This work achieves proper calibration of the current-voltage (I-V) characteristics as well as the breakdown voltage evaluation by enhancing the numerical method. An optimal set of structural parameters for a lateral gallium oxide MOSFET with a discrete field plate is designed using the suggested method. Thanks to the improved electric field profile, the breakdown voltage is increased by 19.7%, and on-state resistance did not degrade. This work resolves the wide-bandgap semiconductors' poor convergence problem and offers a workable strategy for the subsequent theoretical simulation and optimization of gallium oxide power devices.

关键词： Resistance MOSFET Gallium Photonic band gap Numerical simulation Numerical models Structural engineering

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A scalable model for on-chip spiral inductors by Space-mapping neural network

A scalable model for on-chip spiral inductors by Space-mappi...

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International Symposium on Antennas and Propagation (ISAP)

作者： Shiliang Huang Jie Lin Shu Ying Ling Gu Shanwen Hu Junjun Xue Zixuan Wang Zhikuang Cai Jiafei Yao Jun Zhang Yufeng Guo Nanjing University of Posts and Telecommunications Nanjing China Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds.

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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Automatic Design of Structural Parameters for GaN HEMT Using Genetic Algorithm and Artificial Neural Networks

Automatic Design of Structural Parameters for GaN HEMT Using...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Wei Du Jing Chen Jiahao Wu Qing Yao Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China The National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

In this paper, an automatic optimization technique of structural parameters for gallium nitride high-electron-mobility transistors (GaN HEMT) is proposed. Given the design targets, including breakdown voltage (BJI) and specific on-resistance (R on,sp ), this technique can provide the structural parameters of GaN HEMT to meet the targets based on automatic iteration and optimize process using artificial neural networks (ANN) and genetic algorithms (GA). The results show that, when evaluated through technology computer-aided design (TCAD) simulations, designs obtained from the proposed technique deviate from the expected specifications by 2.6% and 0.98%, respectively. Additionally, the efficiency of the proposed method is reflected in its runtime, with the automated design time for each case is within 2 minutes. We believe that the design approach is crucial in accelerating the design closure for GaN transistors.

关键词： Performance evaluation Design automation Runtime Artificial neural networks HEMTs Structural engineering Transistors

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Machine Learning-Based Performance Prediction Model Optimization for Soi Ldmos Using Adaptive Small Space Dataset

Machine Learning-Based Performance Prediction Model Optimiza...

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China Semiconductor technology International Conference (CSTIC)

作者： Jinwen You Jing Chen Qing Yao Yuxuan Dai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China the National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

This work proposes an adaptive small space dataset generation approach to improve the ML-based model. By leveraging radial basis function (RBF) kernel to calculate similarity to the target structure, small space training data sets with high similarity are filtered for model training. The numerical results show that the small space model can not only improve the performance prediction accuracy, but also accelerate the model testing process. Meanwhile, the memory requirements during the training process are significantly reduced. In addition, the accuracies of small space models using different algorithms also demonstrate the robustness of the proposed method.

关键词： Training Adaptation models Training data Life estimation Predictive models Prediction algorithms Robustness

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Application of Machine Learning Method in the Modeling and Designing of Semiconductor Power Devices 16

Application of Machine Learning Method in the Modeling and D...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Guo, Yufeng Chen, Jing Zhang, Jun Yao, Qing Dai, Yuxuan Guo, Bin Xia, Renji Zhang, Maolin Li, Man Yao, Jiafei 1College of Integrated Circuit Science and Engineering Nanjing University of Postsand Telecommunications Nanjing 210023 China 2National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

With the constantly innovating of power integrated circuits, the design and analysis of semiconductor devices are getting more crucial, yet more challenging. Alongside, recent advances in machine learning(ML) technology have exhibited extraordinary potential in power device designing and modeling, as which is capable of achieving efficient but accurate performance prediction and device design. This paper presents a unique analysis from the following two aspects according to the task properties, including performance modeling and design automation. The results show that the ML techniques have been utilized to improve the efficiency with expected accuracy;hence, paving another direction for the intelligent semiconductor device design. © 2022 IEEE.

关键词： Computer aided design

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A High Security Encryption Circuit Based on Ring Oscillator PUF and Secure Scan Chain

A High Security Encryption Circuit Based on Ring Oscillator ...

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International Conference on Electronics technology (ICET)

作者： Xun Xu Hang Yang Jing Zou Zhikuang Cai Lin He National and Local Jiont Engineering Laboratory of RF Intergration and Micro-assembly Technology College of Integrated Circuit Secience and Engineering Nanjing University of Posts and Telecommunication Nanjing China

In this paper, a high security encryption circuit based on ring oscillator PUF and secure scan chain is proposed. The circuit is composed of three parts: self-reference ring oscillator, test vectors input and decision module and secure scan chain circuit. The key protection is divided into two stages. In the key generation period, the unique identification information of the chip is generated by a self-reference ring oscillator. In the key transmission phase, the XOR value of the correct scan test vectors and the obfuscation vectors generated by the linear feedback shift register are input into the secure scan chain, which further obfuscates the data. Compared with conventional schemes, the area of the proposed self-reference ring oscillator PUF is effectively reduced. In this event, the innovative combination of PUF and secure scan chain proposed in this paper have limited area to a certain extent, and greatly improved the security. The probability of cracking the key is merely $\left(\frac{1}{32 !}\right)^4 \frac{1}{\left(2^n * 2\right)^{256} * 2^n} \frac{1}{2^n}$.

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Passive patterned polymer dispersed liquid crystal transparent display

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Chinese Optics Letters 2022年第1期20卷 155-159页

作者： Jing Yan Xiangwen Fan Yifan Liu Ying Yu Yuming Fang Ruo-Zhou Li College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China Touch and Display Module Development Group Microsoft Inc.Suzhou 215123China

A patterned polymer dispersed liquid crystal transparent display using one-time UV exposure is *** device is fabricated by exposing the cell with a uniform UV light through a mask with selective attenuation of the UV *** voltage-transmittance response of the device is different for the corresponding ***,three different states of total scattering,patterned transparent,and total transparent can be realized by controlling the applied *** proposed device used in shutter mode as smart windows and in projected display mode is demonstrated,which shows great potential for smart windows with customized patterns or logos and has potential application in the field of projected transparent displays.

关键词： polymer dispersed liquid crystal transparent display

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