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Stretchable organic electrochemical transistors for sustained high-fidelity electrophysiology and deep learning-assisted sleep monitoring

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Matter 2025年第5期8卷

作者： Pang, Yuncong Li, Yang Gu, Yuzhe Xu, Benfei Zhu, Zihan Wang, Xiaotian Liao, Yuan Huang, Liya Zhao, Qiang State Key Laboratory of Flexible Electronics Nanjing University of Posts & Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210003 China

Good-quality sleep is essential for health, yet obstructive sleep apnea (OSA) underscores the limitations of traditional polysomnography, which is costly, complex, and often uncomfortable. Organic electrochemical transistors (OECTs) offer a promising solution for sleep monitoring due to their high transconductance;however, limitations in stretchability, long-term stability, and intelligent data analysis hinder their broader application. Here, a high-performance stretchable OECT that combines a biocompatible ionic liquid-modified conducting polymer channel with an ionogel electrolyte is developed, addressing the trade-off between performance and wearability. This OECT achieves exceptional transconductance (∼2.1 mS), mechanical resilience (30% strain), and long-term stability (>6 months), enabling high-fidelity electrocardiography (ECG) monitoring with a signal-to-noise ratio (SNR) of 35.7 dB. Through the integration of circuit boards and deep learning algorithms, we have established a wearable, stable, and highly accurate wireless system capable of detecting OSA events from single-lead ECG signals, presenting a novel approach for reliable and portable sleep monitoring. © 2025 Elsevier Inc.

关键词： Conducting polymers

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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An 8–26 GHz Passive Mixer with Excellent Port Matching Utilizing Marchand Balun and Capacitor Compensation

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Chinese Journal of Electronics 2025年第2期34卷 422-428页

作者： Yi Zhang Yuhang Zhuang Hu Zhang Lei Yang Jing Wang Changchun Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China CNRS AstroParticule et Cosmologie Universite Paris Cité Paris France Guobo Electronics Co. Ltd. Nanjing China

In this study, a broadband monolithic microwave integrated circuit (MMIC) double-balanced mixer designed for operation within the frequency range of 8–26 GHz is presented. The design is implemented using a 0.15 μm GaAs process. Traditional Marchand baluns, when applied to wideband mixers, face challenges in simultaneously achieving broad bandwidth and good port matching characteristics. To address this issue, we employ a spiral Marchand balun with a compensation capacitor. This innovative approach not only maintains the mixer's wide bandwidth but also enhances the matching between the local oscillator (LO) and radio frequency (rf) ports. Additionally, it significantly simplifies the complexity of designing the matching circuit. The optimization principle of the compensation capacitor is elaborated in detail within this paper. Experimental results demonstrate that, with an LO power of 14 dBm, the conversion loss remains below 8.5 dB, while the voltage standing wave ratio (VSWR) of the LO and IF ports is less than 2 and the VSWR of the rf port is below 2.4. In comparison with existing literature, our designed mixer exhibits a broader bandwidth and lower loss.

关键词： Radio frequency Spirals Baluns Capacitors Gallium arsenide MMICs microwave circuits Loss measurement Mixers Wideband

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Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells

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Chinese Journal of Electronics 2018年第6期27卷 1158-1162页

作者： ZHANG Ying LI Zeyou YANG Hua GENG Xiao ZHANG Yi College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

A non-uniform Distributed power amplifier(DPA) is designed and implemented in a 0.18μm CMOS technology. The gradual changed gain cells work with the tapered on-chip inductors to construct non-uniform artificial transmission lines, which improves the output power and efficiency in a wide frequency band while maintaining good input and output impedance matching. The proposed DPA achieves 9 dB average associated gain from 1 to 17.2 GHz, and the input return loss is less than--9 dB while the output return loss is less than-8.5 dB in the desired frequency band. The output power at 1 dB Output compression point(OP1 dB) is more than 7.8 dBm in the frequency band of 2-16 GHz, and the peak power-added efficiency is 6.2% with the OP1 dB12.6 dBm at 4 GHz.

关键词： Distributed amplifier Impedance matching Power added efficiency Artificial transmission line

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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

Numerical Study of the VDMOS with an Integrated High-K Gate ...

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2021 China Semiconductor technology International Conference, CSTIC 2021

作者： Zhang, Zhenyu Yao, Jiafei Guo, Yufeng He, YongChen Liu, JinCheng Gu, Mingyuan Liang, Qicong National and Local Joint Engineering Laboratory of Rf Integration and Micro-assembly Technology Nanjing China

ISBN: (纸本)9781665449458

The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity. First, HK dielectric trench makes the electric field distribution of the drift region more uniform, thus improving breakdown voltage (BV). Second, the HK dielectric trench assists the depletion of the drift region, thereby increasing the doping concentration of the drift region and decreasing the specific on-resistance (Ron, sp). Third, the HK gate dielectric decreases the threshold voltage (Vth) and increases the transconductance (gm) of the device. Simulation results show that the new VDMOS has a better breakdown, output, and conduction characteristics when compared to the sidewall HK dielectric VDMOS (SWHK VDMOS) and conventional VDMOS (Con VDMOS). © 2021 IEEE.

关键词： High-k dielectric

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High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

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Chinese Physics B 2023年第1期32卷 458-463页

作者：连晓娟付金科高志瑄顾世浦王磊 The College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China

Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage(0.38 V)and current(200 nA), an extremely steep slope(< 0.1 m V/dec), and a relatively large off/on ratio(> 10^(3)). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.

关键词： memristors artificial neurons 2D MXene Ge_(2)Sb_(2)Te_(5)

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Design of High Performance MXene/Oxide Structure Memristors for Image Recognition Applications

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Chinese Journal of Electronics 2024年第2期33卷 336-345页

作者： Xiaojuan LIAN Yuelin SHI Xinyi SHEN Xiang WAN Zhikuang CAI Lei WANG The College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

Recent popularity to realize image recognition by memristor-based neural network hardware systems has been witnessed owing to their similarities to neurons and ***,the stochastic formation of conductive filaments inside the oxide memristor devices inevitably makes them face some drawbacks,represented by relatively higher power consumption and severer resistance switching *** this work,we design and fabricate the Ag/MXene（Ti3C2）/SiO2/Pt memristor after considering the stronger interactions between Ti3C2and Ag ions,which lead to a Ti3C2/SiO2structure memristor owning to much lower "SET" voltage and smaller resistance switching fluctuation than pure ***,the conductances of the Ag/Ti3C2/SiO2/Pt memristor have been modulated by changing the number of the applied programming pulse,and two typical biological behaviors,i.e.,longterm potentiation and long-term depression,have been ***,device conductances are introduced into an integrated device-to-algorithm framework as synaptic weights,by which the MNIST hand-written digits are recognized with accuracy up to 77.39%.

关键词： Memristor MXene/Oxide structure Electrical characteristics First-principles calculations Image recognition

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Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

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Journal of Semiconductors 2023年第11期44卷 83-88页

作者： Danlu Liu Ming Li Tang Xu Jie Dong Yuming Fang Yue Xu College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology Nanjing 210023China

The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was *** simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μ*** is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias *** the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring *** comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise *** study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

关键词： single-photon avalanche diode(SPAD) virtual guard ring dark count rate(DCR) photon detection probability(PDP) afterpulsing probability(AP)

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On Secrecy Performance Analysis for Downlink RIS-Aided NOMA Systems

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IEICE Transactions on Communications 2023年第5期E106.B卷 402-415页

作者： Xu, Shu Liu, Chen Wang, Hong Qian, Mujun Li, Jin National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications No.9 Wenyuan Road Qixia District Nanjing China

Reconfigurable intelligent surface (RIS) has the capability of boosting system performance by manipulating the wireless propagation environment. This paper investigates a downlink RIS-Aided non-orthogonal multiple access (NOMA) system, where a RIS is deployed to enhance physical-layer security (PLS) in the presence of an eavesdropper. In order to improve the main link s security, the RIS is deployed between the source and the users, in which a reflecting element separation scheme is developed to aid data transmission of both the cell-center and the cell-edge users. Additionally, the closed-form expressions of secrecy outage probability (SOP) are derived for the proposed RIS-Aided NOMA scheme. To obtain more deep insights on the derived results, the asymptotic performance of the derived SOP is analyzed. Moreover, the secrecy diversity order is derived according to the asymptotic approximation in the high signal-To-noise ratio (SNR) and main-To-eavesdropper ratio (MER) regime. Furthermore, based on the derived results, the power allocation coefficient and number of elements are optimized to minimize the system SOP. Simulations demonstrate that the theoretical results match well with the simulation results and the SOP of the proposed scheme is clearly less than that of the conventional orthogonal multiple access (OMA) scheme obviously. © 2023 The Institute of Electronics, Information and Communication Engineers.

关键词： Signal to noise ratio

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Wideband Conformal Antenna Integrated with Lens for Implantable Capsule System 4

Wideband Conformal Antenna Integrated with Lens for Implanta...

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4th International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2021

作者： Xu, Li-Jie Ma, Zhen-Yu Wu, Zhe National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781733509619

This paper presents a conformal antenna integrated with lens for wireless capsule endoscopy applications. Flexible and biocompatible material polyimide is used as capsule wall for human safety issues. To save the inner space of capsule, the proposed antenna is placed inside the capsule, with its radiation patch attached to the capsule cap in conformal form. Besides, the radiation patch is designed in bowtie shape, with one arm shorted to the ground and the other arm fed by coaxial cable. In this way, quarter wavelength resonance is realized with wide bandwidth. Additionally, to meet the application requirement, a hemispherical lens is taken into consideration and placed in capsule cap below the antenna patch. Finally, the simulation result shows that a wide bandwidth of 97.9% can be obtained of this integrated design. © 2021 Applied Computational Electromagnetics Society (ACES).

关键词： Slot antennas

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