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A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

Chinese Physics B 2022年第2期31卷 342-347页

作者： Wei-Ming Sun Bing-Yang Sun Shan Li Guo-Liang Ma Ang Gao Wei-Yu Jiang Mao-Lin Zhang Pei-Gang Li Zeng Liu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by *** fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a *** by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,*** theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,*** time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

关键词： β-Ga2O3 γ-CuI heterojunction broadband photodetector self-power

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Stage Delay Calculation Method Considering Effective Capacitance

Stage Delay Calculation Method Considering Effective Capacit...

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7th International Conference on Electronics technology, ICET 2024

作者： Zha, Peiwen Guo, Jingjing Zhang, Shugang Nanjing University of Posts and Telecommunication National and Local Joint Engineering Laboratory of Rf Intergration and Micro-assembly Technology College of Integrated Circuit Secience and Engineering Nanjing China

ISBN: (纸本)9798350363951

A key part of a static timing tool is its delay calculation engine-responsible for computing delay, slew, and waveform information from models of logic gates and interconnect parasitic. A stage delay calculator includes cell delay and wire delay. In previous studies, they are often independent. With the advancement of technology, the Miller effect and highly resistive load interconnect have increased the interdependency between cell and wire delay calculations. In this paper, we propose a stage delay calculation approach that utilizes effective capacitance(Ceff) to address the computation of delays and waveforms for both cells and wires. Furthermore, machine learning is employed in the calculation of wire delay, modeling the interconnects using Ceffs as a feature. Experimental results demonstrate that the proposed delay calculation method achieves an accuracy within 1.66% of the delays calculated by SPICE. © 2024 IEEE.

关键词： SPICE

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A scalable model for on-chip spiral inductors by Space-mapping neural network

A scalable model for on-chip spiral inductors by Space-mappi...

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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Huang, Shiliang Lin, Jie Ying, Shu Gu, Ling Hu, Shanwen Xue, Junjun Wang, Zixuan Cai, Zhikuang Yao, Jiafei Zhang, Jun Guo, Yufeng Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350341140

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds. © 2023 IEEE.

关键词： neural network parametric model Particle Swarm Optimization (PSO) scalable models space-mapping spiral inductors

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A High Security Encryption Circuit Based on Ring Oscillator PUF and Secure Scan Chain 6

A High Security Encryption Circuit Based on Ring Oscillator ...

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6th International Conference on Electronics technology, ICET 2023

作者： Xu, Xun Yang, Hang Zou, Jing Cai, Zhikuang He, Lin Nanjing University of Posts and Telecommunication National and Local Jiont Engineering Laboratory of Rf Intergration and Micro-assembly Technology College of Integrated Circuit Secience and Engineering Nanjing China

ISBN: (纸本)9798350337693

In this paper, a high security encryption circuit based on ring oscillator PUF and secure scan chain is proposed. The circuit is composed of three parts: self-reference ring oscillator, test vectors input and decision module and secure scan chain circuit. The key protection is divided into two stages. In the key generation period, the unique identification information of the chip is generated by a self-reference ring oscillator. In the key transmission phase, the XOR value of the correct scan test vectors and the obfuscation vectors generated by the linear feedback shift register are input into the secure scan chain, which further obfuscates the data. Compared with conventional schemes, the area of the proposed self-reference ring oscillator PUF is effectively reduced. In this event, the innovative combination of PUF and secure scan chain proposed in this paper have limited area to a certain extent, and greatly improved the security. The probability of cracking the key is merely (1/32 !)4 1 2n ∗ 2)256 ∗ 2} 12n. © 2023 IEEE.

关键词： Cryptography

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Compact SPAD pixels with fast and accurate photon counting in the analog domain

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Journal of Semiconductors 2021年第5期42卷 85-90页

作者： Zhiqiang Ma Zhong Wu Yue Xu College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF integration&Micro-Assembly Technology Nanjing 210023China

A compact pixel for single-photon detection in the analog domain is presented. The pixel integrates a single-photon avalanche diode(SPAD), a passive quenching & active recharging circuit(PQARC), and an analog counter for fast and accurate sensing and counting of photons. Fabricated in a standard 0.18 μm CMOS technology, the simulated and experimental results reveal that the dead time of the PQARC is about 8 ns and the maximum photon-counting rate can reach 125 Mcps(counting per second). The analog counter can achieve an 8-bit counting range with a voltage step of 6.9 mV. The differential nonlinearity(DNL) and integral nonlinearity(INL) of the analog counter are within the ± 0.6 and ± 1.2 LSB, respectively, indicating high linearity of photon counting. Due to its simple circuit structure and compact layout configuration, the total area occupation of the presented pixel is about 1500 μm^(2), leading to a high fill factor of 9.2%. The presented in-pixel front-end circuit is very suitable for the high-density array integration of SPAD sensors.

关键词： single-photon avalanche diode(SPAD) passive quenching&active recharging circuit(PQARC) analog counter nonlinearity

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12-bit 2.6 GS/s rf DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(rf DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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Wide Stopband Substrate Integrated Waveguide Filter Using Bisection and Trisection Coupling in Multilayer

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Chinese Journal of Electronics 2024年第2期33卷 436-442页

作者： Peng CHU Jianguo FENG Peng ZHU Lei GUO Long ZHANG Leilei LIU Guoqing LUO Ke WU College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology School of Information and Communication Engineering Dalian University of Technology Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems Sun Yat-sen University College of Electronics and Information Engineering Shenzhen University School of Electronics and Information Hangzhou Dianzi University Poly-Grames Research Center Polytechnique Montreal

This article presents a highly efficient method for substrate-integrated-waveguide（SIW） filters to achieve very wide stopbands. By employing the proposed trisection slots in addition to the bisection slots as the inter-coupling structures, all spurious modes below TE505 of a SIW filter working in the fundamental mode TE101（f0）can be eliminated without requiring additional structure or complex theoretical analysis, without affecting the design of the fundamental passbands, and without degrading the performance of the filters. For verification, two prototype filters are designed, fabricated, and measured with wide stopbands up to 4.15f0 and 4.83f0, respectively. The proposed technique could facilitate the development of high-performance wide-stopband SIW filters for microwave/wireless circuits and systems.

关键词： Bandpass filter Wide stopband Substrate integrated waveguide Spurious mode suppression Multilayer

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A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

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Chinese Physics B 2023年第4期32卷 605-612页

作者：杨莉莉彭宇思刘增张茂林郭宇锋杨勇唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)*** results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV ***,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and *** zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,*** general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

关键词： Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction UV photodetector self-powered operation

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Dramatic reduction in dark current ofβ-Ga_(2)O_(3) ultraviolet photodectors viaβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation

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Chinese Physics B 2023年第1期32卷 415-420页

作者：岳建英季学强李山岐晓辉李培刚吴真平唐为华 Laboratory of Optoelectronics Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210046China

Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based onβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) film grown by metal-organic chemical vapor *** was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers,resulting in low switching ratio and low responsivity of the *** this work,β-(Al_(0.25)Ga_(0.75))_(2)O_(3) films are used as surface passivation *** to its wide band gap,we obtain excellent light transmission and high lattice matching withβ-Ga_(2)O_(3).We explore the change and mechanism of the detection performance of theβ-Ga_(2)O_(3) detector afterβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface *** is found that under the illumination with 254 nm light at bias 5 V,theβ-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3)photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10^(5).The dark current is sharply reduced about 50 times after passivation of theβ-Ga_(2)O_(3) surface,and current on/off ratio increases by approximately 2 *** is obvious thatβ-Ga_(2)O_(3) detectors withβ-(Al_(0.25)Ga_(0.75))_(2)O_(3) surface passivation can offer superior detector performance.

关键词： β-(Al_(0.25)Ga_(0.75))_(2)O_(3)/β-Ga_(2)O_(3) MOCVD photodetectors defect passivation

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Circularly Polarized Leaky-wave Antenna Based on SubstrateIntegrated Waveguide Space Harmonic

Circularly Polarized Leaky-wave Antenna Based on SubstrateIn...

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International Symposium on Antennas and Propagation (ISAP)

作者： Yangjun Hu Leilei Liu Yangbing Jiang Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A circularly polarized leaky-wave antenna (LWA) is implemented on the substrate integrated waveguide (SIW) based on space harmonic radiation. The LWA cuts the current in two different directions by opening a cross-shaped slot on the substrate integrated waveguide. It realizes circular polarization and frequency sweeping characteristics by adjusting parameters of the slot. The antenna achieves a sweep range of 36°~13° in the θ direction backward radiation by -1 space harmonic from 15GHz to 17GHz. The gain is basically above 13.5dB. Parameters of the cross-shaped slot on the antenna performance are studied. The antenna is fabricated and the measurement results are agree well with the simulation ones.

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