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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Lin, Jie Liao, Xiang Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200∗200 μ m2, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars. © 2023 IEEE.

关键词： Insertion losses

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A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network

A Scalable Model for On-Chip Interdigital Capacitor Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Yuqing Xiong Siqing Guo Shanwen Hu Yan Gu Yuming Fang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (数字)9798331509453

ISBN: (纸本)9798331520243

A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditional series equivalent circuit into a $\pi$ -type structure and adding a series network of resistor and capacitor to characterize the coupling effect, the variation of the equivalent series resistance (ESR) and S-parameter with frequency can be effectively predicted. According to the mathematical equation, the value of each component for the $1\text{-}\pi$ equivalent circuit model can be quickly and correctly obtained. In order to effectively improve the prediction accuracy and convergence speed of neural network, Particle Swarm Optimization (PSO) and Levenberg-Marquardt Back Propagation (LMBP) are used to select and optimize the weights and thresholds of the neural networks. Compared with the traditional neural network model, the proposed SMNN reduces the number of neurons required to map the input-output nonlinear relationship, so that the modeling time is only reduced to $10 \sim 15$ seconds, and the test data accuracy is good.

关键词： Resistance Accuracy Capacitors Predictive models Prediction algorithms System-on-chip Scattering parameters Integrated circuit modeling Biological neural networks Equivalent circuits

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Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

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Science China(Technological Sciences) 2024年第11期67卷 3477-3484页

作者： YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical ***,we construct a high-performance Ga_(2)O_(3)photodetector realized by *** high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated ***,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

关键词： Ga_(2)O_(3) back-illuminated solar-blind photodetector

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基于预连接镍链的高应变敏感度动态可调电磁干扰屏蔽弹性体

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Science China Materials 2024年第2期67卷 629-641页

作者：卞敬周兴成周翔马林峰朱先军李建民刘淑娟赵强 College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽... 详细信息

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽性能的弹性体材料.弹性体在机械拉伸和释放过程中表现出连续和可逆的电磁干扰屏蔽性能.原始弹性体具有良好的阻抗匹配和低介电损耗,允许大部分电磁波通过.拉伸使预连接的短链彼此接触,在内部形成大量的微尺度导电网络,显著增强了电导损耗能力,实现了较强的电磁干扰屏蔽能力.此外,我们通过无线应变传感系统验证了智能电磁干扰屏蔽弹性体的应用潜力,证明了可穿戴智能电磁干扰屏蔽精确监测人体运动的可能性.

关键词： adjustable electromagnetic interference shielding conductive elastomer electromagnetic sensing negative piezoresistivity

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High-Flatness and Broadband Comb Generator Chip 16

High-Flatness and Broadband Comb Generator Chip

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Yang, Wang Qi, Qian Yufeng, Guo Yi, Zhang Nanjing Vocational University of Industry Technology Nanjing China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Based on the signal analysis theory, we build a system-level model to explore the correlation between the narrow pulse signal and its frequency property. Using the high frequency InP HBT devices, this paper designed a broadband comb generator chip. Compared with the traditional method, the chip gets the advantages of high flatness, low power consumption and low input power in the form of active monolithic integrated circuit. Simulation results show that this comb generator can cover 0.1GHz~30GHz frequency band, with amplitude flatness under 12.1dBc and power consumption less than 0.5W. © 2022 IEEE.

关键词： Monolithic integrated circuits

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The growth and expansive applications of amorphous Ga_(2)O_(3)

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Chinese Physics B 2023年第8期32卷 52-68页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory for Organic Electronics and Information Displays(KLOEID)&Institute of Advanced Materials(IAM) Jiangsu Key Laboratory for BiosensorsJiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and AstronauticsMinistry of Industry and Information TechnologyNanjing 211106China

As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,*** from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum ***,a-Ga_(2)O_(3)extremely facilitates important applications in various applied ***,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are ***,potential methods to optimize the film properties are proposed by right of the inspiration from some recent ***,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.

关键词： amorphous-Ga_(2)O_(3) thin film functional application

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

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A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

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Chinese Physics B 2022年第2期31卷 342-347页

作者： Wei-Ming Sun Bing-Yang Sun Shan Li Guo-Liang Ma Ang Gao Wei-Yu Jiang Mao-Lin Zhang Pei-Gang Li Zeng Liu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by *** fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a *** by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,*** theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,*** time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

关键词： β-Ga2O3 γ-CuI heterojunction broadband photodetector self-power

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A 3D Crystal plasticity finite element model for a 3D package under drop impact

A 3D Crystal plasticity finite element model for a 3D packag...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Shijiao Liu Yujie Cheng Linhai Gan Shanwen Hu Zhikuang Cai Lu Liu The College of International Circuit Science and Engineering National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

As one of the most vulnerable positions in the microelectronic package structure, the defect of the solder joint may result in the breakdown of the entire electronic package. Researching the deformation behavior of solder joints in various kinds of loads is significant. The micron-sized solder joints may only contain one or several grains, the traditional macroscopic phenomenology constitutive model cannot reasonably reflect the grain deformation caused by crystalline sliding. A 3D crystal plastic finite element (CPFE) model of 40 Oriented Grains is set up to study the deformation behavior of Sn-3.0Ag-0.5Cu (SAC305) at various strain rates of 1%s -1 , 0.1s -1 , 0.01%s -1 and different temperatures of 298K, 348K, and 398K. Using the Crystal Plasticity Theory, the deformation behavior of every grain, and the mean stress and strain relation of the structure is achieved by means of homogenization. The model is used to simulate monoaxial tension testing of SAC305 solders under various strain rates of 1%s -1 , 0.1s -1 , and 0.01%s -1 , and different temperatures of 298K, 348K, and 398K. Based on the stress and strain relation of experiment data, the relative parameters of the model were adjusted. The results show that the Proper Precision of the SAC305 solder joints under various loading conditions can be used to describe the stress and strain behavior. On this basis, a 3D package finite element model with two chips is established to calculate the stress and non-elastic strain under the impact of dropping, and the sub-model analysis of solder joints in the package is carried out by using the constitutive model and a study was made on the deformed state of the solder joints. By analyzing the influence of different dropping heights (1m, 10m, 20m) and dropping gestures (face-down, right-side-up, and vertical-fall) on the deformation of the electronic package structure, the most vulnerable position of the package structure can be found out, which can provide suggestions for

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A Review of Intelligent Design for Test Based on Machine Learning

A Review of Intelligent Design for Test Based on Machine Lea...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Zeyu Zhao Zhikuang Cai National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

In recent years, with the development of post-Moore era, integrated circuit architecture is complex and test cost is increasing. How to apply efficient, reliable, fast and sustainable ideas to integrated circuit design has become a research hotspot in this field. Machine Learning, by virtue of its ability to quickly process abundant data information, shines in the field of Design For Test, which aims to improve the reliability of integrated circuit products and reduce design costs. In this paper, we introduce the application of Machine Learning in scan compression, Automatic Test Pattern Generation algorithm, the Test Pattern Generator in Built-In-Self- Test and test power. In addition, we prospect the foreground application of Machine Learning application in scan test, Automatic Test Pattern Generation, Built-In-Self- Test and test power.

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