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检索条件"机构=National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology"
132 条 记 录,以下是61-70 订阅
排序:
Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga_(2)O_(3)heterojunction by trapping effect
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Science China(Technological Sciences) 2022年 第3期65卷 704-712页
作者: LI Shan YUE JianYing LU Chao YAN ZuYong LIU Zeng LI PeiGang GUO DaoYou WU ZhenPing GUO YuFeng TANG WeiHua Laboratory of Information Functional Materials and Devices School of ScienceState Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China
Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is ***,we experimentally verify that the photodetection performance modulation... 详细信息
来源: 评论
Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS
Tradeoff Between the Breakdown Voltage and Specific On-Resis...
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International Conference on ASIC
作者: Yufeng Guo Kemeng Yang Jing Chen Man Li Zhengfei Jiang Jiafei Yao Jun Zhang Maolin Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China
The tradeoff between the breakdown voltage (BV) and specific on-resistance (R on,sp ) is an important issue for the power device. Baliga’s Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate t...
来源: 评论
A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network
A Scalable Model for On-Chip Interdigital Capacitor Based on...
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International Conference on Integrated Circuits and microsystems (ICICM)
作者: Yuqing Xiong Siqing Guo Shanwen Hu Yan Gu Yuming Fang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China
A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditio... 详细信息
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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology  14
A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...
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14th International Conference on microwave and Millimeter Wave technology, ICMMT 2022
作者: Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array
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Science China(Technological Sciences) 2023年 第11期66卷 3259-3266页
作者: SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China
In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;... 详细信息
来源: 评论
Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors
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Science China(Technological Sciences) 2024年 第11期67卷 3477-3484页
作者: YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China
Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors ... 详细信息
来源: 评论
基于预连接镍链的高应变敏感度动态可调电磁干扰屏蔽弹性体
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Science China Materials 2024年 第2期67卷 629-641页
作者: 卞敬 周兴成 周翔 马林峰 朱先军 李建民 刘淑娟 赵强 College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China
具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽... 详细信息
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Static thermal simulation of heterogeneous inp-slicon 3d IC stack
Static thermal simulation of heterogeneous inp-slicon 3d IC ...
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2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
作者: Yang, Yanhui Zhang, Yi Yang, Lei Li, Xiaopeng Zhang, Youtao Liu, Zhonghua Guo, Yufeng College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China
Diverse accessible heterogeneous integration (DAHI) a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated wi... 详细信息
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Application of Machine Learning Method in the Modeling and Designing of Semiconductor Power Devices  16
Application of Machine Learning Method in the Modeling and D...
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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022
作者: Guo, Yufeng Chen, Jing Zhang, Jun Yao, Qing Dai, Yuxuan Guo, Bin Xia, Renji Zhang, Maolin Li, Man Yao, Jiafei 1College of Integrated Circuit Science and Engineering Nanjing University of Postsand Telecommunications Nanjing 210023 China 2National & Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China
With the constantly innovating of power integrated circuits, the design and analysis of semiconductor devices are getting more crucial, yet more challenging. Alongside, recent advances in machine learning(ML) technolo... 详细信息
来源: 评论
A 32.2-GHz Full Adder in InP DHBT technology
A 32.2-GHz Full Adder in InP DHBT Technology
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IEEE International Workshop on Radio-Frequency integration technology (rfIT)
作者: Yi Zhang Xiaopeng Li Youtao Zhang Ying Zhang Yufeng Guo Zhonghua Liu Hao Gao National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China JiangSu HengXin Technology Co. Ltd Yixing China Eindhoven University of Technology Eindhoven Netherlands
An ultra-high speed 1bit full adder based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology is presented. The synchronous latch is combined with adding operation to improve the calcu... 详细信息
来源: 评论