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High-performance self-powered GaN/PEDOT:PSS hybrid heterojunction UV photodetector for optical communication

Science China(Technological Sciences) 2024年第2期67卷 608-615页

作者： LI Shan LIU Zeng ZHANG MaoLin YANG LiLi GUO YuFeng TANG WeiHua College of Integrated Circuit Science and Engineering&National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous ***,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating *** from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection *** as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication *** results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.

关键词： GaN UV photodetector self-powered heterojunction optical communication

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Design of High Performance MXene/Oxide Structure Memristors for Image Recognition Applications

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Chinese Journal of Electronics 2024年第2期33卷 336-345页

作者： Xiaojuan LIAN Yuelin SHI Xinyi SHEN Xiang WAN Zhikuang CAI Lei WANG The College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

Recent popularity to realize image recognition by memristor-based neural network hardware systems has been witnessed owing to their similarities to neurons and ***,the stochastic formation of conductive filaments inside the oxide memristor devices inevitably makes them face some drawbacks,represented by relatively higher power consumption and severer resistance switching *** this work,we design and fabricate the Ag/MXene（Ti3C2）/SiO2/Pt memristor after considering the stronger interactions between Ti3C2and Ag ions,which lead to a Ti3C2/SiO2structure memristor owning to much lower "SET" voltage and smaller resistance switching fluctuation than pure ***,the conductances of the Ag/Ti3C2/SiO2/Pt memristor have been modulated by changing the number of the applied programming pulse,and two typical biological behaviors,i.e.,longterm potentiation and long-term depression,have been ***,device conductances are introduced into an integrated device-to-algorithm framework as synaptic weights,by which the MNIST hand-written digits are recognized with accuracy up to 77.39%.

关键词： Memristor MXene/Oxide structure Electrical characteristics First-principles calculations Image recognition

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High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

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Chinese Physics B 2023年第1期32卷 458-463页

作者：连晓娟付金科高志瑄顾世浦王磊 The College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China

Threshold switching(TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage(0.38 V)and current(200 nA), an extremely steep slope(< 0.1 m V/dec), and a relatively large off/on ratio(> 10^(3)). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.

关键词： memristors artificial neurons 2D MXene Ge_(2)Sb_(2)Te_(5)

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Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

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Journal of Semiconductors 2023年第11期44卷 83-88页

作者： Danlu Liu Ming Li Tang Xu Jie Dong Yuming Fang Yue Xu College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology Nanjing 210023China

The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was *** simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μ*** is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias *** the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring *** comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise *** study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

关键词： single-photon avalanche diode(SPAD) virtual guard ring dark count rate(DCR) photon detection probability(PDP) afterpulsing probability(AP)

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Review of the SiC LDMOS power device

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Journal of Semiconductors 2024年第8期45卷 4-17页

作者： Ziwei Hu Jiafei Yao Ang Li Qi Sun Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo College of Integrated Circuit Science and Engineering(Industry-Education Integration School) Nanjing University of Posts andT elecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong 226000China

Silicon carbide(SiC),as a third-generation semiconductor material,possesses exceptional material properties that significantly enhance the performance of power *** SiC lateral double-diffused metal–oxide–semiconductor(LDMOS)power devices have undergone continuous optimization,resulting in an increase in breakdown voltage(BV)and ultra-low specific on-resistance(Ron,sp).This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices,including the trench-gate technology,reduced surface field(RESUrf)technology,doping technology,junction termination techniques and so *** paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.

关键词： SiC LDMOS specific on-resistance breakdown voltage

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An Active Gate Driver with Controllable Gate Current for SiC MOSFETs 9

An Active Gate Driver with Controllable Gate Current for SiC...

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9th International Conference on Integrated Circuits and microsystems, ICICM 2024

作者： Jiang, Zhengfei Yao, Jiafei Dai, Yuxuan Hu, Ziwei Li, Man Zhang, Yi Wang, Zixuan Cai, Zhikuang Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798331509453

An active gate driver (AGD) with controllable gate current (CGC) for SiC MOSFETs is proposed to reduce voltage overshoots and current overshoots. In the CGC-AGD, the controllable current overshoot suppression circuit and voltage overshoot suppression circuit are designed to control the rate of changes in current (di/dt) and voltage (dv/dt) to effectively reduce overshoots. Meanwhile, the current conversion circuit and the push-pull amplifier circuit compensate for the current reduction resulting from the overshoot suppression. This paper simulated the current and voltage overshoot during the switching process based on a double pulse test set up with a 1200V SiC MOSFET by LTspice software. The simulation results show that the current overshoot was reduced by 60% and the voltage overshoot was reduced by 22% when compared to the conventional gate driver (CGD). While compared with the AGD circuit, the current overshoot of CGC-AGD is reduced by 26% and the voltage overshoot is reduced by 19%. These results demonstrate that the CGC-AGD has better suppress on current and voltage overshoot. © 2024 IEEE.

关键词： MOSFET devices

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A Scalable Model for On-Chip Interdigital Capacitor Based on Space-Mapping Neural Network 9

A Scalable Model for On-Chip Interdigital Capacitor Based on...

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9th International Conference on Integrated Circuits and microsystems, ICICM 2024

作者： Xiong, Yuqing Guo, Siqing Hu, Shanwen Gu, Yan Fang, Yuming Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798331509453

A scalable model for on-chip interdigital capacitor is proposed based on space-mapping neural network (SMNN), which combines the equivalent circuit of capacitor and perceptron neural network. By expanding the traditional series equivalent circuit into a π-type structure and adding a series network of resistor and capacitor to characterize the coupling effect, the variation of the equivalent series resistance (ESR) and S-parameter with frequency can be effectively predicted. According to the mathematical equation, the value of each component for the 1-π equivalent circuit model can be quickly and correctly obtained. In order to effectively improve the prediction accuracy and convergence speed of neural network, Particle Swarm Optimization (PSO) and Levenberg-Marquardt Back Propagation (LMBP) are used to select and optimize the weights and thresholds of the neural networks. Compared with the traditional neural network model, the proposed SMNN reduces the number of neurons required to map the input-output nonlinear relationship, so that the modeling time is only reduced to 10 ∼ 15 seconds, and the test data accuracy is good. © 2024 IEEE.

关键词： Particle swarm optimization (PSO)

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A Review of Intelligent Design for Test Based on Machine Learning

A Review of Intelligent Design for Test Based on Machine Lea...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Zhao, Zeyu Cai, Zhikuang Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Nanjing China

ISBN: (纸本)9798350304510

In recent years, with the development of post-Moore era, integrated circuit architecture is complex and test cost is increasing. How to apply efficient, reliable, fast and sustainable ideas to integrated circuit design has become a research hotspot in this field. Machine Learning, by virtue of its ability to quickly process abundant data information, shines in the field of Design For Test, which aims to improve the reliability of integrated circuit products and reduce design costs. In this paper, we introduce the application of Machine Learning in scan compression, Automatic Test Pattern Generation algorithm, the Test Pattern Generator in Built-In-Self-Test and test power. In addition, we prospect the foreground application of Machine Learning application in scan test, Automatic Test Pattern Generation, Built-In-Self-Test and test power. © 2023 IEEE.

关键词： Machine learning

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A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

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Chinese Physics B 2023年第4期32卷 605-612页

作者：杨莉莉彭宇思刘增张茂林郭宇锋杨勇唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)*** results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV ***,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and *** zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,*** general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

关键词： Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction UV photodetector self-powered operation

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Tradeoff between the Breakdown Voltage and Specific On-Resistance of SOI RESUrf LDMOS 15

Tradeoff between the Breakdown Voltage and Specific On-Resis...

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15th IEEE International Conference on ASIC, ASICON 2023

作者： Guo, Yufeng Yang, Kemeng Chen, Jing Li, Man Jiang, Zhengfei Yao, Jiafei Zhang, Jun Zhang, Maolin Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China

ISBN: (纸本)9798350312980

The tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp) is an important issue for the power device. Baliga's Figure of Merits (BFOM) and silicon limit both are useful tools to evaluate this relationship. However, the strong 2-D effect is not considered in the conventional BFOM and the present silicon limit. In this paper, a new BFOM model of SOI RESUrf LDMOS is proposed based on the formulized 2-D electric field in the drift region. Then, the device structure parameters are optimized to maximize the BFOM. A novel silicon limit and critical electric field are also derived. The differences between the lateral and the vertical devices are investigated and compared. The mechanism is discussed. The simulation based on the TCAD tool is employed to verify the novel BFOM and silicon limit. © 2023 IEEE.

关键词： BFOM Breakdown voltage LDMOS RESUrf Silicon limit SOI Specific on-resistance

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