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Stretchable organic electrochemical transistors for sustained high-fidelity electrophysiology and deep learning-assisted sleep monitoring

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Matter 2025年第5期8卷

作者： Pang, Yuncong Li, Yang Gu, Yuzhe Xu, Benfei Zhu, Zihan Wang, Xiaotian Liao, Yuan Huang, Liya Zhao, Qiang State Key Laboratory of Flexible Electronics Nanjing University of Posts & Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210003 China

Good-quality sleep is essential for health, yet obstructive sleep apnea (OSA) underscores the limitations of traditional polysomnography, which is costly, complex, and often uncomfortable. Organic electrochemical transistors (OECTs) offer a promising solution for sleep monitoring due to their high transconductance;however, limitations in stretchability, long-term stability, and intelligent data analysis hinder their broader application. Here, a high-performance stretchable OECT that combines a biocompatible ionic liquid-modified conducting polymer channel with an ionogel electrolyte is developed, addressing the trade-off between performance and wearability. This OECT achieves exceptional transconductance (∼2.1 mS), mechanical resilience (30% strain), and long-term stability (>6 months), enabling high-fidelity electrocardiography (ECG) monitoring with a signal-to-noise ratio (SNR) of 35.7 dB. Through the integration of circuit boards and deep learning algorithms, we have established a wearable, stable, and highly accurate wireless system capable of detecting OSA events from single-lead ECG signals, presenting a novel approach for reliable and portable sleep monitoring. © 2025 Elsevier Inc.

关键词： Conducting polymers

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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A Novel Broadband Electromagnetic Transparent Structure and Its Application in Dual-Band Aperture-Shared Base Station Antenna

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Zhang, Xianyu Fan, Kuikui Yang, Dong Tan, Qingquan Yu, Weiliang Liu, Leilei Luo, Guo Qing Hangzhou Dianzi University Key Laboratory of RF Circuits and System Ministry of Education Hangzhou310018 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration College of Electronic and Optical Engineering Nanjing210003 China

This letter proposes a dual-band, dual-polarization, interleaved aperture-shared base station antenna array (BSAA) based on a broadband electromagnetic transparency structure (EMTS). The interleaved layout places the lower-band (LB) antenna above the existing higher-band (HB) antenna array, realizing multi-band operation within the same radiating aperture. To achieve EM transparency (EMT) and minimize the blockage effect on the HB antennas, periodic metal strips are applied to both sides of the LB dipole. To verify the EMT characteristics, a dual-band aperture-shared BSAA covering 0.76-0.98 GHz (25.3%, |S11| 11| © 2002-2011 IEEE.

关键词： microwave antennas

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A Compact Dual-Band Radiator-Shared Antenna With Enhanced Isolation and Flexible Frequency Ratio Regulation

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IEEE Transactions on Antennas and Propagation 2025年

作者： Wang, Wenlei Jin, Huayan Yu, Weiliang Liu, Leilei Luo, Guo Qing Hangzhou Dianzi University Key Laboratory of RF Circuits System of Ministry of Education School of Electronics and Information Xiasha High Education Zone Hangzhou310018 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration College of Electronic and Optical Engineering Nanjing210003 China

In this article, a radiator-shared duplex antenna (RSDA) with enhanced isolation, flexible frequency ratio regulation, and compact size is proposed for applications in multiband/standard communication systems. The radiator-shared design is based on a shaping scheme by utilizing a parasitic resonator to make the lower-band and higher-band antennas have the same radiation structure. Customized feeding methods are employed to individually excite the high-order substrate integrated waveguide (SIW) cavity mode and the fractional-order patch mode, enabling dual-band operation and allowing a flexible frequency ratio regulation from 1.3 to 1.7. The proposed RSDA eliminates the need for decoupling structures or additional duplexing/filtering circuits. Isolation enhancement of over 24 dB is accomplished by exploiting the layered feeding architecture, shielded sidewalls, and a high-pass SIW feedline to suppress the feedline coupling, surface wave interference, and out-of-band signal propagation, respectively. For verification, a prototype of the proposed RSDA was measured, demonstrating dual-wideband operation that encompasses the targeted 5G/Sub 6G n78 band (3.3–3.6 GHz) and n79 band (4.8–5 GHz). The prototype achieved a peak gain of 5.3 dBi at 3.45 GHz and 7.4 dBi at 4.95 GHz, while exhibiting a high isolation level exceeding 53 dB and good radiation patterns. © 1963-2012 IEEE.

关键词： Substrate integrated waveguides

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Low-Profile Independent Dual Linear Polarization Reflectarray Filtenna

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Yu, Weiliang Tong, Shijun Wang, Wenlei Dai, Xiwang Liu, Leilei Luo, Guo Qing Hangzhou Dianzi University Xiasha High Education Park Key Laboratory of RF Circuits & System Ministry of Education School of Electronics and Information Hangzhou310018 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration College of Electronic and Optical Engineering Nanjing210003 China

This paper proposes a low-profile dual-linear polarization reflectarray filtenna with a unit cell featuring a dual-polarization magneto-electric (ME) dipole based on split-ring resonators (SRRs). The ME dipole has two independent feeding sections, each connected to a separate open-ended microstrip line, enabling independent control of dual-polarization reflection phases. The ME dipole and SRRs generate low and high frequency radiation nulls, respectively. The filtenna achieves 3dB gain bandwidths of 19.3% for x-polarization and 18.5% for y-polarization, with maximum gains of 21.77dBi (35.1% efficiency) for x-polarization and 21.93dBi (36.4% efficiency) for y-polarization. The selectivity characteristics for x- and y-polarizations are 0.5 and 0.52, respectively. With a relative thickness of only 0.072λ, this filtenna is suitable for long-distance communication systems requiring high-capacity data transmission and integration. © 2002-2011 IEEE.

关键词： Reflection

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Fully Shielded Half-Mode SIW Cavity-Based Compact Filtenna For 5G n257 Operations

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Wang, Wenlei Jin, Huayan Yu, Weiliang Liu, Leilei Luo, Guo Qing Hangzhou Dianzi University Key Laboratory of RF Circuits & System of Ministry of Education School of Electronics and Information Xiasha High Education Zone Hangzhou310018 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration College of Electronic and Optical Engineering Nanjing210003 China

A compact filtenna is presented in this letter based on the study on a fully shielded half-mode substrate-integrated waveguide (FSD-HMSIW) cavity. The proposed FSD-HMSIW cavity uses a shielded combined boundary instead of the open magnetic boundary, enabling radiation while preventing energy leakage into the substrate region. Resultantly, two FSD-HMSIW cavities can be closely placed to reduce the size and produce two in-band resonance poles, as well as an additional radiation null due to the electric-dominated cross coupling. By further adding a shorted concave loop, a magnetic-dominated cross coupling path can be introduced to produce a resonance pole and an extra radiation null at the lower band. The active simulation of a 1 × 8 beam scanning array verifies that the proposed compact filtenna can provide a stable bandpass filtering response over a wide beam-scanning angle of ±45°. For verification, a prototype of the proposed filtenna with a compact size of 0.32λ0 × 0.32λ0 was fabricated and tested, showing a wide bandwidth covering the 5G n257 band (26.5–29.5 GHz), a high peak gain of 6.8 dBi, excellent frequency selectivity, and good radiation patterns. © 2002-2011 IEEE.

关键词： Filtenna fully shielded cavity millimeter-wave (mmW) miniaturization wide scanning angle

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Dual-Polarization Wideband Bandpass Absorptive Frequency Selective Structure with High Angular Stability

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Chen, Yuchang Yu, Weiliang Du, Yi Wang, Wenlei Liu, Leilei Luo, Guo Qing Hangzhou Dianzi University Key Laboratory of RF Circuits&System of Ministry of Education School of Electronics and Information Hangzhou310018 China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration College of Electronic and Optical Engineering Nanjing210003 China

This paper proposes a dual-polarized bandpass absorptive frequency selective structure (AFSS) with high angular stability, achieved through the integration of dielectric matching layers (DMLs) and a metamaterial absorber (MMA). The proposed MMA is embedded within the spacer layer to stabilize the electrical length while enhancing absorption performance. An angle-stable absorber is developed using dielectric matching technology, incorporating both MMA and DML. Furthermore, this absorber is engineered into a bandpass AFSS with stable absorption bands. An additional DML positioned beneath the AFSS further improves angular stability of passband. Both simulations and experimental results demonstrate the design's angular stability up to 60° across operational band. © 2002-2011 IEEE.

关键词： Equivalent circuits

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High-performance self-powered GaN/PEDOT:PSS hybrid heterojunction UV photodetector for optical communication

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Science China(Technological Sciences) 2024年第2期67卷 608-615页

作者： LI Shan LIU Zeng ZHANG MaoLin YANG LiLi GUO YuFeng TANG WeiHua College of Integrated Circuit Science and Engineering&National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous ***,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating *** from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection *** as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication *** results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.

关键词： GaN UV photodetector self-powered heterojunction optical communication

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Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells

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Chinese Journal of Electronics 2018年第6期27卷 1158-1162页

作者： ZHANG Ying LI Zeyou YANG Hua GENG Xiao ZHANG Yi College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

A non-uniform Distributed power amplifier(DPA) is designed and implemented in a 0.18μm CMOS technology. The gradual changed gain cells work with the tapered on-chip inductors to construct non-uniform artificial transmission lines, which improves the output power and efficiency in a wide frequency band while maintaining good input and output impedance matching. The proposed DPA achieves 9 dB average associated gain from 1 to 17.2 GHz, and the input return loss is less than--9 dB while the output return loss is less than-8.5 dB in the desired frequency band. The output power at 1 dB Output compression point(OP1 dB) is more than 7.8 dBm in the frequency band of 2-16 GHz, and the peak power-added efficiency is 6.2% with the OP1 dB12.6 dBm at 4 GHz.

关键词： Distributed amplifier Impedance matching Power added efficiency Artificial transmission line

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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

Numerical Study of the VDMOS with an Integrated High-K Gate ...

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2021 China Semiconductor Technology International Conference, CSTIC 2021

作者： Zhang, Zhenyu Yao, Jiafei Guo, Yufeng He, YongChen Liu, JinCheng Gu, Mingyuan Liang, Qicong National and Local Joint Engineering Laboratory of Rf Integration and Micro-assembly Technology Nanjing China

ISBN: (纸本)9781665449458

The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity. First, HK dielectric trench makes the electric field distribution of the drift region more uniform, thus improving breakdown voltage (BV). Second, the HK dielectric trench assists the depletion of the drift region, thereby increasing the doping concentration of the drift region and decreasing the specific on-resistance (Ron, sp). Third, the HK gate dielectric decreases the threshold voltage (Vth) and increases the transconductance (gm) of the device. Simulation results show that the new VDMOS has a better breakdown, output, and conduction characteristics when compared to the sidewall HK dielectric VDMOS (SWHK VDMOS) and conventional VDMOS (Con VDMOS). © 2021 IEEE.

关键词： High-k dielectric

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