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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jiawei Wang Jingjing Guo Dongmin Zhao Zhikuang Cai College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

In the early days, engineers used non-linear delay models (NLDM) to estimate the circuit delay information. However, the accuracy of NLDM lookup table (LUT) decreases with the continuous change of the process, which makes the delay estimation become a difficult problem. Therefore, the effective current source model (ECSM) is proposed. The ECSM is a LUT composed of input transition time (T R ) and load capacitance (C L ), which can save the threshold crossing point (TCP) of the output waveform to better estimate the delay. However, the timing model is needed to reduce re-presentations, due to the high cost of building the library of ECSM. In this work, we present a timing model of the complete ECSM LUT for a CMOS inverter. The timing model is divided into two cases with a total of five regions. The proposed timing model is further analyzed by judging the value of threshold crossing points’ voltage (V TCP ) and drain to source saturation voltage (V dsat ), and the model is simplified for different threshold crossing points. Compared with the simulation results of HSPICE, the model is accurate with a maximum error of 2.35% and a maximum average error of 0.45%, which reduces the repetitive simulation of HSPICE.

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Double Dielectrics Enhancement on the Ldmos Using High-K Field Dielectric and Low-K Buried Dielectric

SSRN

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SSRN 2022年

作者： Yao, Jiafei Liu, Xin Sun, Mingshun Xu, Tianci Li, Man Chen, Jing Zhang, Maolin Zhang, Jun Guo, Yufeng Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are established for this novel LDMOS. The validity of the analytical models is confirmed by the simulation results. Based on the analytical and simulate results, the modulation mechanism of the high-k field dielectric and low-k buried dielectric on the electric field and breakdown characteristics of DDE LDMOS are analyzed and compared. Compared to the conventional LDMOS, the specific on-resistance of DDE LDMOS is reduced by 19%, the breakdown voltage and figure of merit ( FOM ) of the DDE LDMOS can be improved by 62% and 222.4% when the permittivity of high-k field dielectric and low-k buried dielectric are 100 and 2. Meanwhile, the transfer characteristic, output characteristic, frequency characteristic and switching characteristic of the DDE LDMOS are also discussed. © 2022, The Authors. All rights reserved.

关键词： MOS devices

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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response

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Chinese Physics B 2022年第8期31卷 700-704页

作者： Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China China Academy of Launch Vehicle Technology Beijing 100076China School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Center for Optoelectronics Materials and Devices Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is *** Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering *** one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo ***,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.

关键词： Ga_(2)O_(3) array photodetector MOCVD deep UV detection

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Laser-induced forward transferred silver nanomembrane with controllable light absorption

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Journal of Central South University 2022年第10期29卷 3399-3409页

作者： LI Ruo-zhou GUO Lyu-jiu YANG Ming-qing QU Ke YAN Jing College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and TelecommunicationsNanjing 210023China College of Electronic and Optical Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China

Laser processing provides highly-controlled modification and on-demand fabrication of plasmon metal nanostructures for light absorption and photothermal *** present the laser-induced forward tansfer(LIFT)fabrication of silver nanomembranes in control of light *** varying the hatch distance,different morphologies of randomly distributed plasmon silver nanostructures were produced,leading to well-controlled light absorption levels from 11%to 81%over *** anti-reflection features were maintained below 17%.Equilibrated and plain absorptions were obtained throughout all absorption levels with a maximum intensity fluctuation of±8.5%for the 225μJ *** 45μJ pulse energy can offer a highly equilibrated absorption at a 60%absorption level with an intensity fluctuation of±1%.Pattern transfer was also achieved on a thin tape *** laser-transferred characters and patterns demonstrate a localized temperature rise.A rapid temperature rising of roughly 15℃can be achieved within 1 *** LIFT process is highly efficiently fabricated with a typical speed value of 10^(3)to 10^(5)cm^(2)/*** results indicated that LIFT is a well-controlled and efficient method for the production of optical films with specific absorption levels.

关键词： laser-induced forward transfer silver nanomembrane controllable light absorption laser printing

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A SAR ADC-based Temperature Sensor in BCS O.18μm Technology 14

A SAR ADC-based Temperature Sensor in BCS O.18μm Technology

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14th International Conference on microwave and Millimeter Wave Technology, ICMMT 2022

作者： Liu, Yihua Wang, Yang Guo, Yufeng Gao, Hao Zhang, Yi Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing210096 China Nanjing Vocational University of Industry Technology Nanjing China Silicon Austria Labs LinzA-4040 Austria

ISBN: (纸本)9781665467520

This paper presents a SAR ADC-based temperature sensor in 0.18μm. In order to expand the temperature measurement range, the improved TSPC register is used in the SAR logic circuit. Meanwhile, the segmented capacitor structure is adopted to reduce the chip area, while the dynamic matching technology is used to reduce the influence of component mismatch on the accuracy. The post-simulation results show that the temperature measurement range of the temperature sensor is -150 ° C-200 ° C, and the temperature measurement accuracy is -3-+4 °C. © 2022 IEEE.

关键词： Temperature sensors

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A Thermo-mechanical Coupled 3D Crystal Plasticity Finite Element Model for CASTIN Solder Alloy

A Thermo-mechanical Coupled 3D Crystal Plasticity Finite Ele...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Yang Li Yujie Cheng Shanwen Hu Binbin Xu Lu Liu Zhikuang Cai The College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong China

As one of the fragile components in the package structure, solder joints are usually subjected to thermo-mechanical coupled loads. Therefore, it is essential to investigate the deformation behavior and constitutive model of solder joints for the reliability prediction of the whole packaging. As a kind of polycrystalline material, solder joints contain multiple grains with different orientations. As the electronic devices gradually decrease in size, the solder joints may only contain one or several grains, the conventional macro-phenomenological constitutive model is not able to describe the deformation at the grain scale caused by crystalline slip. In this paper, a finite element model on the basis of 3D crystal plasticity theory is proposed, in which the behavior of each grain is first investigated, and the overall behavior of the structure is obtained by calculating the average of all elements. Firstly, the models with 10, 40, and 100 grains are established to find out the influence of grains’ numbers on the overall behavior. Then, the strain rate jump experiments of CASTIN solder alloy are simulated using the appropriate model. The CASTIN solder alloy is stretched to 1.5% strain at strain rates of 10 -6 s -1 to 10 -2 s -1 under temperatures of -55°C to 125°C, respectively. A comparison is made between the simulation results and the experimental results, the parameters of the established model are obtained through matching the experiment curves, and the effect of the temperature on the parameters is analyzed. The model then is used to investigate the deformation response of CASTIN alloy under the thermo-mechanical cycle tests without changing these parameters. It can be found that the proposed model can give reasonable predictions of CASTIN alloy under thermo-mechanical coupled loads.

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Research on Space-Time Orbital Angular Momentum Antenna Array Based on Sequential Control 13

Research on Space-Time Orbital Angular Momentum Antenna Arra...

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13th International Conference on microwave and Millimeter Wave Technology, ICMMT 2021

作者： Weijie, Gong Yumei, Chang Zhenliang, Zhou Tao, Zhu Ye, Han National And Local Joint Engineering Laboratory Of RF Integration And Micro-Assembly Technology 9 Wenyuan Rd Nanjing210035 China Nanjing University Of Posts And Telecommunications 9 Wenyuan Rd Nanjing210035 China

ISBN: (纸本)9781665434379

In this paper, the principle and influence factors of orbital angular momentum (OAM) electromagnetic (EM) waves generated by space-time antenna array (STAA) have been studied. A STAA is formed by introducing the time parameter as a new dimension to the traditional antenna array. The amplitude and phase weighting of the traditional antenna array can be easily realized through the time weighting of the STAA, so the OAM can be generated by the STAA. At the same time, in order to show the influence of the radiation characteristics of antenna array on the generation of OAM waves, a circular patch antenna array that can work at 2.45GHz is designed and simulated to verify the proposal. According to the simulation results, one can conclude that, the number of modes of OAM generated by the STAA is determined by the STAA's bandwidth and the frequency of the switching function. More modes of OAM waves can be generated by reducing the switching frequency or broadening the antenna bandwidth. © 2021 IEEE.

关键词： Antenna arrays

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Optimization of Creep Constitutive Modeling of Lead-Free Solder Using Gene Expression Programming Methods

Optimization of Creep Constitutive Modeling of Lead-Free Sol...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Wei Chen Xu He Xiaowei Xu Lu Liu Department of physics Nanjing University of science and technology Nanjing China Research Institute of Physical and Chemical Engineering of Nuclear Industry Tianjin China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this paper, the GEP method is utilized to derive an ontological model for creep data, focusing on the mechanical properties and structural deformation mechanisms of solder at different scales. By analyzing the effect of micro-and meso-structural morphology on the material, experimental validation is provided for the construction of an ontological model that depicts the viscoplasticity of Pb- Free solder in detail. Iterative optimization of a larger population of experimental samples will drive the development of a fine-grained intrinsic model that will be supported by solid theoretical and empirical evidence, advancing the field towards deeper understanding and innovation. In this study, the GEP algorithm is used to fit the intrinsic model of solder creep and is shown to have good fitting results. The advantages of GEP in equation model fitting are the simplicity of its heuristic algorithm, the ease of its implementation and its good optimization results. In addition, GEP is highly flexible, adaptable and robust to noisy data. After comparing the experimental data simulations, it is found that GEP is able to accurately analyze and predict in the establishment and optimization of creep model, which brings an important contribution to the field of solder research.

关键词： Adaptation models Analytical models Creep Lead Programming Predictive models Prediction algorithms

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Why Can One-Bit Quantization Work? A Mathematical Theory Analysis 6

Why Can One-Bit Quantization Work? A Mathematical Theory Ana...

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6th International Conference on Information Communication and Signal Processing, ICICSP 2023

作者： Liu, Shiqi Li, Bing Zhao, Bo Huang, Lei Sun, Weize Chen, Long Huang, Min Bao, Weimin University of Electronic Science and Technology of China Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro Assembly Technology Nanjing China Southeast University State Key Laboratory of Millimeter Waves Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

ISBN: (纸本)9798350339994

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization. © 2023 IEEE.

关键词： analog to digital converter harmonic one-bit quantization quantization noise

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Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation

Investigation of Lateral Gallium Oxide MOSFET with Discrete ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lei Wang Maolin Zhang Zeng Liu Lili Yang Shan Li Weihua Tang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Innovation Center for Gallium Oxide Semiconductor (IC-GAO) Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The main barrier preventing the simulation design and optimization of wide bandgap semiconductor power devices is poor numerical convergence. Currently, the uncalibrated two-dimensional electric field distribution is the main foundation for the breakdown voltage optimization of gallium oxide power devices. This work achieves proper calibration of the current-voltage (I-V) characteristics as well as the breakdown voltage evaluation by enhancing the numerical method. An optimal set of structural parameters for a lateral gallium oxide MOSFET with a discrete field plate is designed using the suggested method. Thanks to the improved electric field profile, the breakdown voltage is increased by 19.7%, and on-state resistance did not degrade. This work resolves the wide-bandgap semiconductors' poor convergence problem and offers a workable strategy for the subsequent theoretical simulation and optimization of gallium oxide power devices.

关键词： Resistance MOSFET Gallium Photonic band gap Numerical simulation Numerical models Structural engineering

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