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Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells

Chinese Journal of Electronics 2018年第6期27卷 1158-1162页

作者： ZHANG Ying LI Zeyou YANG Hua GENG Xiao ZHANG Yi College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications

A non-uniform Distributed power amplifier(DPA) is designed and implemented in a 0.18μm CMOS technology. The gradual changed gain cells work with the tapered on-chip inductors to construct non-uniform artificial transmission lines, which improves the output power and efficiency in a wide frequency band while maintaining good input and output impedance matching. The proposed DPA achieves 9 dB average associated gain from 1 to 17.2 GHz, and the input return loss is less than--9 dB while the output return loss is less than-8.5 dB in the desired frequency band. The output power at 1 dB Output compression point(OP1 dB) is more than 7.8 dBm in the frequency band of 2-16 GHz, and the peak power-added efficiency is 6.2% with the OP1 dB12.6 dBm at 4 GHz.

关键词： Distributed amplifier Impedance matching Power added efficiency Artificial transmission line

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12-bit 2.6 GS/s rf DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(rf DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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Circularly Polarized Leaky-wave Antenna Based on SubstrateIntegrated Waveguide Space Harmonic

Circularly Polarized Leaky-wave Antenna Based on SubstrateIn...

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International Symposium on Antennas and Propagation (ISAP)

作者： Yangjun Hu Leilei Liu Yangbing Jiang Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A circularly polarized leaky-wave antenna (LWA) is implemented on the substrate integrated waveguide (SIW) based on space harmonic radiation. The LWA cuts the current in two different directions by opening a cross-shaped slot on the substrate integrated waveguide. It realizes circular polarization and frequency sweeping characteristics by adjusting parameters of the slot. The antenna achieves a sweep range of 36°~13° in the θ direction backward radiation by -1 space harmonic from 15GHz to 17GHz. The gain is basically above 13.5dB. Parameters of the cross-shaped slot on the antenna performance are studied. The antenna is fabricated and the measurement results are agree well with the simulation ones.

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Resource allocation for indoor self-blockage WmWave device-to-device communications

TechRxiv

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TechRxiv 2020年

作者： Wang, Lei Yu, Xiaoting Zheng, Baoyu Yao, Jiming Gui, Guan National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China National Mobile Communications Research Laboratory Southeast University Nanjing210096 China Global Energy Interconnection Research Institute Co. Ltd. Beijing100031 China

Millimeter wave (mmWave) technology can meet the requirements of large amount of data communications among intelligent devices for indoor scenario. With high requirement of throughput, reducing interference in an enclosed region is still a challenge. For indoor scenario, the human bodies are considered as the main blockages besides conventional blockages. In this paper, we present a new system model by exploiting the self-blockage model to capture the effects of human body, while using multi-ball Line of Sight (LOS) link state model to describe the conventional blockage. The combination of the two components provides a more comprehensive and accurate expression of indoor obstruction. We give a closed expression of coverage rate to analyze the system performance. Simulation results show that the proposed model is highly accurate to describe the distribution of blockages for indoor case. Then, we formulate the resource allocation as an optimization problem under this scenario. The target of this optimization is to achieve the maximum throughput by minimizing interference. To reach this goal, an improved Powell Multi Vertex Coloring algorithm (PMVC) is proposed. The throughput raises apparently when we modify this scheme to put more flows in different time-slots evenly. Numerical experiments show that the improved algorithm can achieve higher system throughput than traditional greedy algorithm and Powell Vertex Coloring (PVC) scheme. © 2020, CC BY.

关键词： Millimeter waves

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A New Domain Decomposition Scheme for Electromagnetic Wave Scattering from Penetrable Targets 5

A New Domain Decomposition Scheme for Electromagnetic Wave S...

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5th IEEE International Conference on Computational Electromagnetics, ICCEM 2019

作者： Zheng, Kai-Lai Chu, Peng Kong, Wei-Bin Xu, Feng College of Electronic and Optical Engineer Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology China State Key Lab. of Millimeter Waves Southeast University Nanjing210096 China College of Information Engineering Yancheng Insitute of Technology Yancheng China

ISBN: (纸本)9781538671115

In this paper, a new nonoverlapping domain decomposition (DD) scheme is built for solving EM scattering from penetrable targets. The Rao-Wilton-Glisson(RWG) basis functions are used to expand the equivalent surface electric/magnetic current on the entire surface. Each full RWG basis function across some boundary curve is split into two half-RWG basis functions. The global MoM matrix equation is then combined with the sparse matrix equation determined by the boundary electric/magnetic current continuity to form the complete model equation. In this DD scheme, when solving each subdomain, only part of the matrix needs to be stored into memory, and then the memory requirement is significantly reduced. Numerical examples are provided to demonstrate the validity of the proposed method. © 2019 IEEE.

关键词： Electromagnetic wave scattering

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3-D absorptive frequency selective reflector based on slotlines

3-D absorptive frequency selective reflector based on slotli...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Zhang, Yixiong Zhao, Xuankai Li, Bo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China

ISBN: (纸本)9781538663462

This paper presents an absorptive frequency selective reflector (AFSR), which exhibits a flat reflection characteristic with absorption at the both sides of the reflection band. This structure formed in planar slotline structures is mainly inclusive of one lossless resonator and two lossy resonators, which are responsible for one reflection band and two absorption bands respectively. In order to minimize the coupling of these three resonators, metallic plates are utilized to make these three resonators separated. In this paper, equivalent circuit model (ECM) based on transmission line theory is introduced to describe the design concept. Then, the realization of specified structure is provided, where a good agreement of reflection coefficient results between EM simulation and ECM is achieved. The proposed AFSR features stable performance under oblique incident angles up to 40°. © 2018 IEEE.

关键词： Resonators

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A Novel microstrip Patch Antenna with Bandwidth Enhancement

A Novel Microstrip Patch Antenna with Bandwidth Enhancement

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International Symposium on Antennas and Propagation (ISAP)

作者： Wei Dai Yiming Tang Zhaojun Chu Jinpeng Xu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts & Telecommunications Nanjing Jiangsu P.R. China

A novel microstrip patch antenna with bandwidth enhancement is proposed in this paper. Based on the structure of the traditional microstrip patch antenna, the proposed antenna adds an impedance matching network to broaden bandwidth and achieve lower return loss. Adding a parasitic patch near the original patch, the antenna bandwidth is further expanded and the radiation characteristics of the antenna can be improved. The simulated impedance bandwidth of 16.7% (14~16.5 GHz) can be obtained and the gain in the range of bandwidth is mostly above 6 dB. The proposed antenna enjoys good impedance matching and stable gain, which make it suitable for modern communication systems, satellite communications and some control systems.

关键词： Bandwidth microstrip antennas Patch antennas microstrip Gain Impedance matching

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Static thermal simulation of heterogeneous inp-slicon 3d IC stack

Static thermal simulation of heterogeneous inp-slicon 3d IC ...

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2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

作者： Yang, Yanhui Zhang, Yi Yang, Lei Li, Xiaopeng Zhang, Youtao Liu, Zhonghua Guo, Yufeng College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China

ISBN: (纸本)9781728102863

Diverse accessible heterogeneous integration (DAHI) a novel packing technology, is aimed at improving circuit performance and reducing the costs. Different materials, such as GaN, InP, SiGe and Si can be integrated with vertical heterogeneous interconnection (HIC) structures. It is natural an extension of three-dimensional integrated chips and advanced complete system in a package (SIP). Despite its enormous potential and advantages, thermal management is the biggest challenge in heterogeneous integration. In this paper, the thermal conduction in heterogeneous integration of InP and Si is researched by using the finite element method. The simulation results show that four HICs is enough for a signal hot spot in a limit area. Two-row configuration is the best tradeoff between HIC number and the thermal management in the HIC matrix. The static thermal simulation can guide the design of circuit layout in the later stage, such as the number and distribution of InP devices and HICs. © 2019 IEEE.

关键词： Indium phosphide

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A 32.2-GHz Full Adder in InP DHBT technology

A 32.2-GHz Full Adder in InP DHBT Technology

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IEEE International Workshop on Radio-Frequency integration technology (rfIT)

作者： Yi Zhang Xiaopeng Li Youtao Zhang Ying Zhang Yufeng Guo Zhonghua Liu Hao Gao National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China JiangSu HengXin Technology Co. Ltd Yixing China Eindhoven University of Technology Eindhoven Netherlands

An ultra-high speed 1bit full adder based on indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology is presented. The synchronous latch is combined with adding operation to improve the calculation speed. A single-level parallel-gated circuit is designed using majority decision algorithm to reduce the power consumption. Measurement results show that the maximum clock frequency of the full adder is 32.2-GHz, and the overall power consumption is 350mW.

关键词： Adders Latches Indium phosphide III-V semiconductor materials DH-HEMTs Power demand Frequency measurement

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Performance Variability and Analog Behaviors of Memristive Devices with New Transition Metal Carbide

Performance Variability and Analog Behaviors of Memristive D...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Fei Gao Yihao Chen Yuefeng Li Miaocheng Zhang Yu Wang Nan He Xinyi Shen Ertao Hu Xiang Wan Xiao Gong Yufeng Guo Xiaojuan Lian Yi Tong College of Electronic and Optical Engineering & College of Microelectronics National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing University of Posts and Telecommunications Nanjing China National University of Singapore Singapore

ISBN: (纸本)9781728135533

Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.

关键词： learning (artificial intelligence) memristors neural nets Memristors Neural network Transition metal carbides transition metal Artificial neural networks New families Electrical Synapses STT3A gene THICK MOULDING COMPOUND performance boost

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