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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than −12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers.

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-x Tix)O3/SiC Floating Gate Transistor

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yu Liu Lin Lin Xiang Wang Chengyan Zhong Junxiong Guo Wen Huang Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing P. R. China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu P. R. China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots.

关键词： Power demand Silicon carbide Neuromuscular Neuromorphics Feature extraction Threshold voltage Transistors Synapses Robots Prosthetics

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Band offsets and electronic properties of the Ga_(2)O_(3)/FTO heterojunction via transfer of free-standing Ga_(2)O_(3) onto FTO/glass

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Chinese Physics B 2021年第11期30卷 385-388页

作者： Xia Wang Wei-Fang Gu Yong-Feng Qiao Zhi-Yong Feng Yue-Hua An Shao-Hui Zhang Zeng Liu Department of Electrical Engineering and Automation Shanxi Institute of TechnologyYangquan 045000China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous *** this work,the band offsets of the Ga_(2)O_(3)/FTO heterojunction are studied using x-ray photoelectron spectroscopy(XPS)based on Kraut’s method,which suggests a staggered type-II alignment with a conduction band offset(DEC)of 1.66 eV and a valence band offset(DEV)of􀀀2.41 ***,the electronic properties of the Ga_(2)O_(3)/FTO heterostructure are also measured,both in the dark and under ultraviolet(UV)illuminated conditions(254 nm UV light).Overall,this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga_(2)O_(3).

关键词： Ga_(2)O_(3)/FTO heterojunction band alignment magnetron sputtering free-standing

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A SAR ADC-based Temperature Sensor in BCS O.18μm technology

A SAR ADC-based Temperature Sensor in BCS O.18μm Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yihua Liu Yang Wang Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Nanjing Vocational University of Industry Technology Nanjing China Silicon Austria Labs Austria State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a SAR ADC-based temperature sensor in $0.18\mu m$ . In order to expand the temperature measurement range, the improved TSPC register is used in the SAR logic circuit. Meanwhile, the segmented capacitor structure is adopted to reduce the chip area, while the dynamic matching technology is used to reduce the influence of component mismatch on the accuracy. The post-simulation results show that the temperature measurement range of the temperature sensor is -150 ° C-200 ° C, and the temperature measurement accuracy is -3-+4 °C.

关键词： Temperature measurement Temperature sensors microwave measurement microwave integrated circuits Power demand Millimeter wave technology Millimeter wave measurements

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network

A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781665482271

Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to reconstruct high quality images in real time, this paper presents a hybrid method which combines the Born iterative Gaussian mixture model generalized approximate message passing (BI-GMM-GAMP) algorithm with a convolutional neural network (CNN). To be specific, BI-GMM-GAMP is first used for obtaining the preliminary images. Subsequently, these pictures are used for training U-Net. Experiments show the validity of this method.

关键词： Training Inverse problems Message passing Electromagnetic scattering Approximation algorithms Real-time systems Convolutional neural networks

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： microwave integrated circuits Power demand Pipelines Layout Voltage microwave circuits Calibration

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Why Can One-Bit Quantization Work? A Mathematical Theory Analysis

Why Can One-Bit Quantization Work? A Mathematical Theory Ana...

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IEEE International Conference on Information Communication and Signal Processing (ICICSP)

作者： Shiqi Liu Bing Li Bo Zhao Lei Huang Weize Sun Long Chen Min Huang Weimin Bao Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization.

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On secrecy outage probability for downlink NOMA systems with relay-antenna selection

Research Square

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Research Square 2021年

作者： Xu, Shu Liu, Chen Wang, Hong Qian, Mujun Sun, Wenfeng National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications No.9 Wenyuan Road Qixia District Nanjing210003 China School of Science and Information Qingdao Agricultural University Qingdao266109 China

Secure transmission is essential for future non-orthogonal multiple access (NOMA) system. This paper investigates relay-antenna selection (RAS) to enhance physical-layer security (PLS) of cooperative NOMA system in the presence of an eavesdropper, where multiple antennas are deployed at the relays, the users, and the eavesdropper. In order to reduce expense on radio frequency (rf) chains, selection combining (SC) is employed at both the relays and the users, whilst the eavesdropper employs either maximal-ratio combining (MRC) or selection combining (SC) to process the received signals. Under the condition that the channel state information (CSI) of the eavesdropping channel is available or unavailable, two effective relay-antenna selection schemes are proposed. Additionally, the closed-form expressions of secrecy outage probability (SOP) are derived for the proposed relay-antenna selection schemes. In order to gain more deep insights on the derived results, the asymptotic performance of the derived SOP is analyzed. In simulations, it is demonstrated that the theoretical results match well with the simulation results and the SOP of the proposed schemes is less than that of the conventional orthogonal multiple access (OMA) scheme obviously. © 2021, CC BY.

关键词： Channel state information

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A Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by First-Principles Approach

SSRN

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SSRN 2022年

作者： Lian, Xiaojuan Li, Fu Liu, Peng Wan, Xiang Liu, Xiaoyan Ren, Qingying Cai, Zhikuang Wang, Ning Wang, Lei College of Integrated Circuits Science and Engineering Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration oand Micro-assembly Technology Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China Electrical & Electronic Laboratory Center Department of Optical Engineering College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China School of Science Key Laboratory of High Performance Scientific Computation Xihua University Chengdu610039 China

Ge2Sb2Se4Te alloy has most recently exhibited its outstanding optical properties for non-volatile photonic storage applications, while its electrical and thermal transport properties were rarely reported, thus limiting its application versatility. To overcome above issue, we performed detailed study on the electrical, mechanical and thermal transport properties of Ge2Sb2Se4Te alloy according to first-principles calculations. The calculated results showed that, originating from the layered crystal structure of Ge2Sb2Se4Te, its Young’s modulus and shear modulus along the in-plane direction were found to be larger than those along the out-of-plane direction, which suggested more superb anti-deformation characteristics along the in-plane direction. Besides, the calculated Poisson's ratio implied that the in-plane bonding of Ge2Sb2Se4Te was mainly ionic-covalent bonding, and the out-of-plane bonding was of van der Waals (vdW) interaction character. The huge chemical bond difference between in-plane direction and out-of-plane direction led to strong phonon anharmonicity and phonon thermal transport anisotropy. Therefore, layered Ge2Sb2Se4Te exhibited low phonon group velocity and short phonon lifetime, which led to encouragingly low lattice thermal conductivities of 4.45 W/mK, 3.54 W/mK and 0.41 W/mK along the x-axis, y-axis and z-axis at 300 K, respectively. Also, calculated electronic structure revealed the metallicity character of Ge2Sb2Se4Te alloy without pronounced band gap, which made this material applicable to thermal insulation materials rather than traditional thermoelectric materials. This work was useful to promote the application of Ge2Sb2Se4Te in the field of engineering thermal management and storage devices based on the optical-thermal mechanism. © 2022, The Authors. All rights reserved.

关键词： Van der Waals forces

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