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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Fei Gao Yihao Chen Yuefeng Li Miaocheng Zhang Yu Wang Nan He Xinyi Shen Ertao Hu Xiang Wan Xiao Gong Yufeng Guo Xiaojuan Lian Yi Tong College of Electronic and Optical Engineering & College of Microelectronics National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing University of Posts and Telecommunications Nanjing China National University of Singapore Singapore

ISBN: (纸本)9781728135533

Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.

关键词： learning (artificial intelligence) memristors neural nets Memristors Neural network Transition metal carbides transition metal Artificial neural networks New families Electrical Synapses STT3A gene THICK MOULDING COMPOUND performance boost

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Analytical modeling for substrate effect of lateral power devices

Analytical modeling for substrate effect of lateral power de...

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China Semiconductor technology International Conference (CSTIC)

作者： Jing Chen Yufeng Guo Man Li Ling Du Xinchun Ji Changchun Zhang Jiafei Yao National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Tcchnology Nanjing China College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781509066957

A two-dimensional(2-D) analytical model for substrate effect of lateral power devices is developed. By solving the 2-D Poisson's equation, an analytical model is proposed and verified by the agreements between the analytical results and numerical simulation results using MEDICI. It suggests that the optimized substrate voltage modules the distributions of the surface potential and electrical field, whose effect is equivalent to changing the concentration of the drift region. As a result, the breakdown voltage is improved.

关键词： Analytical models Lead

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

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A Spline-Profile Smooth-Walled Horn With Low Cross-Polarization And Low Sidelobe

A Spline-Profile Smooth-Walled Horn With Low Cross-Polarizat...

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International Conference on Smart Grid and Electrical Automation (ICSGEA)

作者： Zijing Wu Yaming Bo Shaohua Wu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing People's Republic of China Jangsu Food and Pharmaceutical Science College

ISBN: (数字)9781728182780

ISBN: (纸本)9781728182797

spline-profile smooth-walled horns are widely used as feeds for its symmetric beam, low cross-polarization levels and low sidelobes while their fabrication is easier than corrugated conical horns, especially at millimeter-wave frequencies. In this paper, a spline-profile smooth-walled horn, for a synthetic aperture, has been demonstrated with low cross-polarization (

关键词： Zirconium Xenon Smart grids Hafnium Automation

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Novel 3D bandpass frequency selective structures based on stacked planar slotlines: Modelling, design and validation 30

Novel 3D bandpass frequency selective structures based on st...

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30th Asia-Pacific microwave Conference, APMC 2018

作者： Zhang, Wanping Li, Bo Zhu, Lei Han, Ye Lyu, Yun-Peng National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China Department of Electncai and Computer Engineering University of Macau Macau999078 China

ISBN: (纸本)9784902339451

In this paper, a class of 3D bandpass frequency selective structures (FSSs) using stacked planar slotlines is proposed to exhibit bandpass filtering response of high performance. Firstly, a traditional slot-type frequency selective surface and the proposed stacked planar slotlines are introduced successively, and their operating principles are discussed to provide a comparison with each other. Then, two design examples on the basis of the stacked slotlines are presented to exhibit bandpass response with wide out-of-band rejection and high frequency selectivity, respectively. It is found that the stacked slotline structures can produce controllable multi-mode resonance and be exactly analyzed by using transmission-line theory over a wide frequency range. © 2018 IEICE

关键词： Frequency selective surfaces

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Leaky Wave Antenna Based on Composite Right/Left Handed Half-mode Substrate Integrated Waveguide

Leaky Wave Antenna Based on Composite Right/Left Handed Half...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yangbin Jiang Leilei Liu Yangjun Hu Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing Jiangsu China

In this paper, we propose a half-mode substrate integrated waveguide (HMSIW) leaky wave antenna (LWA) based on composite right/left handed (CRLH) transimission line (TL). The unit cell of the proposed antenna consists of two vertical slots on the microstrip and two metal vias. The equivalent series capacitance and the equivalent shunt inductance in the CRLH structure are realized by vertical slots and two vias, respectively. We simulated the unit cell and the proposed antenna. The antenna can achieve continuously wide beam scanning from backward to forward. The beam scanning angles from -50 degrees to 30 degrees.

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Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Gradient Algorithm on the Fixed-Rank Matrix Manifold

Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Grad...

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IEEE International Conference on Communications (ICC)

作者： Wanyue Zhang Yunchao Song Chen Liu Zheng Huang Mujun Qian College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781728190549

ISBN: (纸本)9781728190556

This paper investigates hybrid-field channel estimation for extremely large-scale MIMO (XL-MIMO) systems. Different from the previous algorithms based on sparsity, the proposed algorithm considers both the low-rank structure and the sparsity of the channel, leading to a more accurate estimation performance. Particularly, we formulate the estimation problem of the hybrid-field channel as a sparse matrix recovery problem with a fixed-rank constraint. However, this problem encounters two challenges: the non-smooth $\ell_{1}-\mathbf{norm}$ term and the non-convex fixed-rank matrix constraint. To address these challenges, we employ the proximal operator to handle the non-smooth $\ell_{1}-\mathbf{norm}$ term and consider the set of matrices with a fixed rank as the fixed-rank matrix manifold. Then a fixed-rank matrix manifold-based proximal gradient (FRM-PG) algorithm is proposed to smoothly search the solution on the fixed-rank matrix manifold, where the descent direction is derived in each iteration. Simulation results demonstrate that the proposed algorithm outperforms the classical channel estimation algorithms.

关键词： Manifolds Accuracy Simulation Channel estimation Estimation Sparse matrices Optimization

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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response

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Chinese Physics B 2022年第8期31卷 700-704页

作者： Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China China Academy of Launch Vehicle Technology Beijing 100076China School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Center for Optoelectronics Materials and Devices Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is *** Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering *** one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo ***,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.

关键词： Ga_(2)O_(3) array photodetector MOCVD deep UV detection

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A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth 10

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Ana...

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10th International Conference on microwave and Millimeter Wave technology, ICMMT 2018

作者： Shen, Yu Zhang, Yi Yang, Lei Li, Xiaopeng Liu, Zhonghua Zhang, Yin Guo, Yufeng National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210023 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China State Key Laboratory of Millimeter Waves Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing Electronic Devices Institute China Nanjing GuoBo Electronics Co. Ltd China

ISBN: (纸本)9781538624166

In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of -5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth. © 2018 IEEE.

关键词： Bandwidth

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A High-Precision Delay Faults Testing Technique Based on the Improved DWR Structure

A High-Precision Delay Faults Testing Technique Based on the...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Xiaoting Liu Xuewei Zhang Haofei Hong Guopeng Zhou Zixuan Wang Zhikuang Cai College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

Aiming at the challenge of testing delay faults in through silicon via (TSV) of Chiplets, a high-precision delay faults testing technique based on the improved die wrapper register (DWR) is proposed. Relying on time-to-digital converter (TDC) embedded in the original DWR, transitional signal is propagated in delay chains and conversed into a digital signal to observe whether there is the delay fault. The double delay chains are constructed by two kinds of XOR gates with different delays. The conversion with high precision is achieved by dividing the transition signal into continuous small time-intervals. With the improved test access port controller (TAPC) circuit, the time to configure effective test path is greatly reduced and the delay test can be realized without additional external interfaces. The simulation results demonstrate that delay faults can be detected within the precision of 11.246ps and the time of test configuration is reduced.

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