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International Conference on Wireless Communications and Signal Processing (WCSP)

作者： Chen Li Lei Wang Bin Kang Mingkai Chen Jingwu Cui Baoyu Zheng Key Lab of Broadband Wireless Communication and Sensor Network Technology Nanjing University of Posts and Telecommunications Ministry of Education China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications China

ISBN: (数字)9781728172361

ISBN: (纸本)9781728172378

Although deep learning has been dominant in the field of target detection, there are still some challenges in the field of detection of ships: horizontal boundary box contains too much redundancy and noise in the scene of large scale and dense arrangement of ships, and there are many interferences in remote sensing optical images that affect the bounding box regression. Recent neural network for ship detection is generally used to extract the pixel information in the image to achieve rapid positioning and boundary box regression, or to process the dataset, so as to train a more robust network. However, these methods do not focus on the original feature map and loss functions of the target, which directly lead to the effects of ship positioning and regression. In this paper, we propose a ship detection network based on feature filter and Kullback-Leibler (KL) divergence loss function. In this paper, we propose to use mask filters on the output of the region of interest (ROI) network to remove the noise around the rotating bounding box, which is conducive to the regression of the rotating bounding box and angle in the second stage. In order to get a better bounding box, we propose to use KL loss function for regression of bounding box parameters. With the optimization of KL loss, the bounding box can better surround the ship. We carried out experiments on our own remote sensing ship image dataset for ship detection, it contains 5,126 remote sensing satellite images and more than 23800 ships in 6 categories. The dataset contains a variety of scenarios and challenges. Experiments show that the method is accurate and effective, and the bounding box has good wrapping property.

关键词： Marine vehicles Feature extraction Remote sensing Object detection Redundancy Interference Proposals

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α-Ga₂O₃ Photodetector With Responsivity Over A/W Level Based on Sn-Assisted Mist-CVD

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IEEE Sensors Journal 2024年第2期25卷 2518-2524页

作者： Gang Li Haoxuan Peng Yingxu Wang Suhao Yao Maolin Zhang Yufeng Guo Weihua Tang Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering and the National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and Telecommunications Nanjing China College of Electrical and Electronic Engineering Wenzhou University Wenzhou China

In recent years, $\alpha $ -Ga2O3 and $\alpha $ -Ga2O3-based photodetectors (PDs) have garnered significant attention due to their unique advantages in deep-ultraviolet (DUV) photodetection. However, the growth of $\alpha $ -Ga2O3 thin films via the mist chemical vapor deposition (mist-CVD) method faces several challenges, such as inferior crystallization quality, which impedes the development of high-performance PDs. In this study, we successfully achieved high-quality $\alpha $ -Ga2O3 epitaxy on the $\alpha $ -Al2O3 substrate using the tin (Sn)-assisted mist-CVD technique. A DUV PD was subsequently fabricated on the epitaxial film, and its detection performance was thoroughly evaluated. The PD achieved a photocurrent of up to 175.40 nA and a signal-to-noise ratio (SNR) of 76.5 dB. Most notably, it also exhibited a high responsivity of up to 3.76 A/W, an external quantum efficiency (EQE) of 1841.12%, and a detectivity of $1.8\times 10^{{11}}$ Jones, underscoring the potential of the Sn-assisted mist-CVD method for advancing the development of next-generation $\alpha $ -Ga2O3 DUV PDs.

关键词： Epitaxial growth Gallium Sensors Photodetectors Substrates Scanning electron microscopy Photonic band gap X-ray scattering Transmission electron microscopy Tin

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Why Can One-Bit Quantization Work? A Mathematical Theory Analysis 6

Why Can One-Bit Quantization Work? A Mathematical Theory Ana...

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6th International Conference on Information Communication and Signal Processing, ICICSP 2023

作者： Liu, Shiqi Li, Bing Zhao, Bo Huang, Lei Sun, Weize Chen, Long Huang, Min Bao, Weimin University of Electronic Science and Technology of China Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of Rf Integration and Micro Assembly Technology Nanjing China Southeast University State Key Laboratory of Millimeter Waves Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

ISBN: (纸本)9798350339994

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization. © 2023 IEEE.

关键词： analog to digital converter harmonic one-bit quantization quantization noise

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Sic-on-Insulator Based Lateral Power Device and it' S Analytical Models

SSRN

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SSRN 2024年

作者： Yao, Jiafei Li, Ang Liu, Yuao Hu, Ziwei Li, Man Yang, Kemeng Zhang, Jun Chen, Jing Zhang, Maolin Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong China

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides the dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analysis the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analysis the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both of the analytical and numerical results provide the physic explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device. © 2024, The Authors. All rights reserved.

关键词： Electric breakdown

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A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

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Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation

Investigation of Lateral Gallium Oxide MOSFET with Discrete ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lei Wang Maolin Zhang Zeng Liu Lili Yang Shan Li Weihua Tang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Innovation Center for Gallium Oxide Semiconductor (IC-GAO) Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The main barrier preventing the simulation design and optimization of wide bandgap semiconductor power devices is poor numerical convergence. Currently, the uncalibrated two-dimensional electric field distribution is the main foundation for the breakdown voltage optimization of gallium oxide power devices. This work achieves proper calibration of the current-voltage (I-V) characteristics as well as the breakdown voltage evaluation by enhancing the numerical method. An optimal set of structural parameters for a lateral gallium oxide MOSFET with a discrete field plate is designed using the suggested method. Thanks to the improved electric field profile, the breakdown voltage is increased by 19.7%, and on-state resistance did not degrade. This work resolves the wide-bandgap semiconductors' poor convergence problem and offers a workable strategy for the subsequent theoretical simulation and optimization of gallium oxide power devices.

关键词： Resistance MOSFET Gallium Photonic band gap Numerical simulation Numerical models Structural engineering

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A scalable model for on-chip spiral inductors by Space-mapping neural network

A scalable model for on-chip spiral inductors by Space-mappi...

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International Symposium on Antennas and Propagation (ISAP)

作者： Shiliang Huang Jie Lin Shu Ying Ling Gu Shanwen Hu Junjun Xue Zixuan Wang Zhikuang Cai Jiafei Yao Jun Zhang Yufeng Guo Nanjing University of Posts and Telecommunications Nanjing China Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds.

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Enhanced power transmission for on-road AGV wireless charging systems using a current-optimized technique

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Progress In Electromagnetics Research C 2019年 96卷 205-214页

作者： Zhang, Jin Chen, Dong Zhang, Chen School of Electronic and Information Engineering Jinling Institute of Technology Nanjing211169 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Electric Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China School of Electrical Engineering Southeast University Nanjing210096 China

This paper provides a sound wireless power transfer (WPT) recharging solution for onroad automated guided vehicle (AGV) system. In this solution, multiple transmitting coils serve as power transmitters (TXs), and a receiving coil in AGV serves as a power receiver (RX). The multiple TXs are along a straight track for dynamic charging to AGV. The circuit model of multiple-TX and single-RX WPT system is first constructed based on circuit theory (CT), and then current-optimized scheme based on Lagrangian multiplier method is proposed to tune the currents in multiple TXs to maximize the power delivered to the load (PDL). The equal current (EC Case) flowing through each TX is compared with the optimal current (OC Case). Through contrastive analysis, the OC Case shows its advantages in PDL. Finally, the theoretical analysis results are confirmed by the results of full-wave electromagnetic simulation. © 2019, Electromagnetics Academy. All rights reserved.

关键词： Electromagnetic simulation

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Laser Scribing of Graphene Oxide Using Bessel Beam for Humidity Sensing

Advanced Devices and Instrumentation

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Advanced Devices and Instrumentation 2023年 4卷

作者： Li, Ruo-Zhou Yan, Jing Qu, Ke Yu, Ying College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China

Laser-scribed graphene oxide (GO) shows great promise for high-performance, cost-effective humidity sensors. However, when using the commonly employed Gaussian beam, the Rayleigh length is relatively short, leading to potential stability issues during large-area processing, especially when defocusing occurs. In this paper, we utilize a diffraction-free Bessel beam to one-step fabricate reduced graphene oxide (rGO) electrodes specifically designed for humidity sensing applications. The effects of defocusing and laser power on the line width and resistance of the fabricated electrodes are investigated, giving the optimal processing parameters for Bessel laser writing of GO. The line width, resistance, and sheet resistance of the rGO electrode are stable at a defocusing distance within ±1.00 mm. Defocusing also proves to be effective in reducing the ablation region during the fabrication process. The temperature and humidity responses of the electrodes are examined, focusing on those fabricated with typical defocusing settings, and the related mechanisms are discussed. Proof-of-principle rGO/GO/rGO humidity sensors are demonstrated, and were one-step fabricated using a Bessel beam with both focusing and defocusing settings. The corresponding humidity response results evidence that rGO humidity sensors can be fabricated using a Bessel beam, even in the defocusing cases. The investigation into the Bessel-beam-based laser fabrication technique offers promising prospects for rapid, flexible, and cost-effective production of graphene-based humidity sensors. Meanwhile, the study of defocusing may enhance the fabrication stability to withstand defocusing conditions effectively. Copyright © 2023 Ruo-Zhou Li et al.

关键词： Graphene

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On secrecy outage probability for downlink NOMA systems with relay-antenna selection

Research Square

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Research Square 2021年

作者： Xu, Shu Liu, Chen Wang, Hong Qian, Mujun Sun, Wenfeng National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications No.9 Wenyuan Road Qixia District Nanjing210003 China School of Science and Information Qingdao Agricultural University Qingdao266109 China

Secure transmission is essential for future non-orthogonal multiple access (NOMA) system. This paper investigates relay-antenna selection (RAS) to enhance physical-layer security (PLS) of cooperative NOMA system in the presence of an eavesdropper, where multiple antennas are deployed at the relays, the users, and the eavesdropper. In order to reduce expense on radio frequency (rf) chains, selection combining (SC) is employed at both the relays and the users, whilst the eavesdropper employs either maximal-ratio combining (MRC) or selection combining (SC) to process the received signals. Under the condition that the channel state information (CSI) of the eavesdropping channel is available or unavailable, two effective relay-antenna selection schemes are proposed. Additionally, the closed-form expressions of secrecy outage probability (SOP) are derived for the proposed relay-antenna selection schemes. In order to gain more deep insights on the derived results, the asymptotic performance of the derived SOP is analyzed. In simulations, it is demonstrated that the theoretical results match well with the simulation results and the SOP of the proposed schemes is less than that of the conventional orthogonal multiple access (OMA) scheme obviously. © 2021, CC BY.

关键词： Channel state information

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