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Electronics Design Automation (ISEDA), International Symposium of

作者： Jing Zou Zhikuang Cai Xun Xu Hang Yang Yufeng Guo Laboratory of RF Intergration and Micro-assembly Technology National and Local Jiont Engineering College of Integrated Circuit Secience and Engineering Nanjing University of Posts and Telecommunications Nanjing China

Scan chain insertion is a widely used technique in design for testability (DFT), which brings high fault coverage, good controllability and observability to chip testing. But for the encryption chip, the attacker can use the scan chain to carry out side channel attack on the chip, and leak the encrypted data in the chip. In order to ensure the security of the chip, scholars in this field have done a lot of research. They exposed the attackers against the AES hardware encryption algorithm attack methods, and put forward a series of corresponding security countermeasures, such as complex DFT structure, modify scan chain structure, scan I/O restriction and so on. In this paper, we deeply analyze and summarize the attack methods and security countermeasures commonly used at present, compares their advantages and disadvantages and limitations, and briefly analyze the development of secure DFT technology in the future.

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Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

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Chinese Physics B 2020年第3期29卷 460-467页

作者： Jia-Fei Yao Yu-Feng Guo Zhen-Yu Zhang Ke-Meng Yang Mao-Lin Zhang Tian Xia College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China School of Electrical Engineering University of VermontBurlingtonVT 05405USA

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.

关键词： high-k dielectric step doped silicon pillar model breakdown voltage

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Compact SPAD pixels with fast and accurate photon counting in the analog domain

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Journal of Semiconductors 2021年第5期42卷 85-90页

作者： Zhiqiang Ma Zhong Wu Yue Xu College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF integration&Micro-Assembly Technology Nanjing 210023China

A compact pixel for single-photon detection in the analog domain is presented. The pixel integrates a single-photon avalanche diode(SPAD), a passive quenching & active recharging circuit(PQARC), and an analog counter for fast and accurate sensing and counting of photons. Fabricated in a standard 0.18 μm CMOS technology, the simulated and experimental results reveal that the dead time of the PQARC is about 8 ns and the maximum photon-counting rate can reach 125 Mcps(counting per second). The analog counter can achieve an 8-bit counting range with a voltage step of 6.9 mV. The differential nonlinearity(DNL) and integral nonlinearity(INL) of the analog counter are within the ± 0.6 and ± 1.2 LSB, respectively, indicating high linearity of photon counting. Due to its simple circuit structure and compact layout configuration, the total area occupation of the presented pixel is about 1500 μm^(2), leading to a high fill factor of 9.2%. The presented in-pixel front-end circuit is very suitable for the high-density array integration of SPAD sensors.

关键词： single-photon avalanche diode(SPAD) passive quenching&active recharging circuit(PQARC) analog counter nonlinearity

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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response

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Chinese Physics B 2022年第8期31卷 700-704页

作者： Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China China Academy of Launch Vehicle Technology Beijing 100076China School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Center for Optoelectronics Materials and Devices Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China

A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is *** Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering *** one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo ***,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.

关键词： Ga_(2)O_(3) array photodetector MOCVD deep UV detection

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A Compact Low-Loss Bi-directional Amplifier for Ku-band

A Compact Low-Loss Bi-directional Amplifier for Ku-band

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jie Lin Xiang Liao Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200*200 $\mu \mathbf{m}^{\mathbf{2}}$, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars.

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Security Analysis of Blockchain Smart Contract: Taking Reentrancy Vulnerability as an Example 7th

Security Analysis of Blockchain Smart Contract: Taking Reent...

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7th International Conference on Artificial Intelligence and Security, ICAIS 2021

作者： Ji, Mingtao Liang, GuangJun Li, Meng Zhang, Haoyan He, Jiacheng Department of Computer Information and Cyberspace Security Jiangsu Police Institute Nanjing China National and Local Joint Engineering Laboratory of Radio Frequency Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9783030786205

As the blockchain enters the 2.0 era, the smart contract which is based on the blockchain platform has gradually entered people’s field of vision. By its transparency, non-tampering, independence from third-party arbitration, and trustlessness, it is widely applied in equity crowdfunding, games, insurance, particularly the Internet of Things. However, the attack on the TheDAO smart contract alert public awareness of the security of a smart contract. The essence of the smart contract is an electronic contract written in code. Due to reasons like lacking standard libraries for its programming language, several loopholes will inevitably appear in the code. Once they are found by attackers, the interests of the main body using smart contracts will be damaged. There are many types of vulnerabilities in smart contracts, such as reentrancy, short address attacks, and timestamp dependence. This article mainly focuses on re-entry vulnerabilities as the research object and analyzes the principle of re-entry vulnerabilities. Featuring immutable after being chained, the smart contract must be checked before it is chained to make up for the vulnerability. This paper provides a detection method based on symbolic execution to detect reentrancy vulnerabilities. We hope to strengthen people’s security awareness of smart contracts and boost the research of smart contracts in terms of security by our study of the smart contract reentrancy vulnerability in this article. Promote the research and development of smart contracts. © 2021, Springer Nature Switzerland AG.

关键词： Smart contract

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Design of a Broadband Miniaturized Filter Power Amplifiers

Design of a Broadband Miniaturized Filter Power Amplifiers

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Xiang Liao Jingjing Huang Shu Ying Shanwen Hu Zixuan Wang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers.

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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FDSOI NCFET with Stepped Thickness Ferroelectric Layer

FDSOI NCFET with Stepped Thickness Ferroelectric Layer

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Mingyuan Gu Jiafei Yao Yufeng Guo Maolin Zhang Qicong Liang Jiayi Wu Jincheng Liu Dongxiang Xu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Nanjing University of Posts and Telecommunications Nanjing China

In this work, a novel structure of FDSOI Negative Capacitance FET (NCFET) with Stepped Thickness Ferroelectric Layer (STFL) is proposed. The STFL forms an ununiform electrostatic potential distribution on the gate oxide, which modulates the electric characteristics of NCFET. The capacitances, transfer characteristics, output characteristics, and Sub-threshold Swing (SS) are investigated. The SS of STFL FDSOI NCFET can be reduced to 49mV/dec, shows a better performance when compared to the conventional FDSOI NCFET with equal ferroelectric layer.

关键词： Electric potential Simulation Capacitance-voltage characteristics Field effect transistors Silicon-on-insulator Logic gates Tools

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Circularly Polarized Leaky Wave Antenna Based on Compound Left-Right-Hand Structure

Circularly Polarized Leaky Wave Antenna Based on Compound Le...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Huanyu Yin Pinyan Li Leilei Liu National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781665434379

ISBN: (纸本)9781665434386

In this paper, a circularly polarized leaky wave antenna based on compound left-right-hand structure (CRLH) is proposed. In this design, the equivalent series capacitance is realized by the annular groove on the metal microstrip, and the parallel inductance is realized by the metal through hole. The antenna can realize frequency beam scanning in 14-18GHz and circular polarization in 15.5-18GHz.

关键词： microwave antennas Polarization microwave technology microwave integrated circuits Millimeter wave technology Metals Leaky wave antennas

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