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7th International Conference on Artificial Intelligence and Security, ICAIS 2021

作者： Liang, Guangjun Xin, Jianfang Wang, Qun Ni, Xueli Guo, Xiangmin Department of Computer Information and Cyber Security Jiangsu Police Institute Nanjing China National and Local Joint Engineering Laboratory of Radio Frequency Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China School of Electrical Engineering Anhui Polytechnic University Wuhu China

ISBN: (纸本)9783030786205

The Internet of Things has been proposed for nearly 20 years. Its rich digital trace repository provides insight into people’s daily activities at home and elsewhere. On the other hand, IoT devices can become targets of attacks, or even tools for a crime. The number of civil and criminal cases involving IoT devices or services is increasing year by year. IoT forensics refers to the process of collecting, analyzing, storing and providing digital evidence in IoT devices in a legally binding manner. In particular, the traceability, integrity and tamper resistance of the evidence should be maintained. However, traditional IoT forensics architecture may be difficult to achieve these goals. This article aims to explore the combination of blockchain technology and IoT forensics which can make full use of the natural advantages of traceability and tamper resistance. A forensic architecture of the Internet of Things based on blockchain evidence is proposed, including an applications layer and data layer. The applications layer includes various APP applications, and the data layer includes the evidence analysis platform and the blockchain platform. Furthermore, an IoT forensics model including blockchain storage and supervision is proposed which can ensure the traceability and tamper-proof of forensic data. © 2021, Springer Nature Switzerland AG.

关键词： Internet of things

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The Role of Even Longitudinal Electric Field Distribution in Optimizing Carrier Transport Efficiency of Field-Effect Transistors

SSRN

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SSRN 2022年

作者： Zhang, Maolin Liu, Zeng Yang, Lili Yao, Jiafei Chen, Jing Zhang, Jun Wei, Wei Tang, Weihua Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China

Longitudinal electric field ( E L ) optimization is a widely applied approach to improve the carrier transport efficiency of semiconductor devices such as field-effect transistors (FETs). However, rigorous analysis to determine the optimal E L distribution remains a major challenge. By developing a physical model and investigating the impact of the E L distribution on the carrier transport efficiency, this work proves that an even E L distribution is the optimal case. To verify the model, FETs with various gate structures are designed and studied. The results show that the current driving capability of FETs can be improved by achieving a more uniform E L distribution along the channel direction. In addition, the use of multi-material gate architecture can produce a quasi-even E L distribution and thus performs the greatest current performance. Besides, various FET structures that feature the even E L distribution are discussed as well. More importantly, our results show that the constant- E L scaling can be implemented via the even E L , which exhibits potential in relieving the threshold voltage shift and achieving the maximum current performance. © 2022, The Authors. All rights reserved.

关键词： Field effect transistors

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process

Design of a Broadband High Flatness Drive Amplifier Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than −12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers.

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-x Tix)O3/SiC Floating Gate Transistor

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yu Liu Lin Lin Xiang Wang Chengyan Zhong Junxiong Guo Wen Huang Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing P. R. China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu P. R. China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots.

关键词： Power demand Silicon carbide Neuromuscular Neuromorphics Feature extraction Threshold voltage Transistors Synapses Robots Prosthetics

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Band offsets and electronic properties of the Ga_(2)O_(3)/FTO heterojunction via transfer of free-standing Ga_(2)O_(3) onto FTO/glass

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Chinese Physics B 2021年第11期30卷 385-388页

作者： Xia Wang Wei-Fang Gu Yong-Feng Qiao Zhi-Yong Feng Yue-Hua An Shao-Hui Zhang Zeng Liu Department of Electrical Engineering and Automation Shanxi Institute of TechnologyYangquan 045000China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China

The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous *** this work,the band offsets of the Ga_(2)O_(3)/FTO heterojunction are studied using x-ray photoelectron spectroscopy(XPS)based on Kraut’s method,which suggests a staggered type-II alignment with a conduction band offset(DEC)of 1.66 eV and a valence band offset(DEV)of􀀀2.41 ***,the electronic properties of the Ga_(2)O_(3)/FTO heterostructure are also measured,both in the dark and under ultraviolet(UV)illuminated conditions(254 nm UV light).Overall,this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga_(2)O_(3).

关键词： Ga_(2)O_(3)/FTO heterojunction band alignment magnetron sputtering free-standing

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A SAR ADC-based Temperature Sensor in BCS O.18μm technology

A SAR ADC-based Temperature Sensor in BCS O.18μm Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yihua Liu Yang Wang Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China Nanjing Vocational University of Industry Technology Nanjing China Silicon Austria Labs Austria State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a SAR ADC-based temperature sensor in $0.18\mu m$ . In order to expand the temperature measurement range, the improved TSPC register is used in the SAR logic circuit. Meanwhile, the segmented capacitor structure is adopted to reduce the chip area, while the dynamic matching technology is used to reduce the influence of component mismatch on the accuracy. The post-simulation results show that the temperature measurement range of the temperature sensor is -150 ° C-200 ° C, and the temperature measurement accuracy is -3-+4 °C.

关键词： Temperature measurement Temperature sensors microwave measurement microwave integrated circuits Power demand Millimeter wave technology Millimeter wave measurements

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Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability

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IEEE Transactions on Electron Devices 2022年第5期69卷 2443-2448页

作者： Shan Li Zu-Yong Yan Jin-Cheng Tang Jian-Ying Yue Zeng Liu Pei-Gang Li Yu-Feng Guo Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science and the State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successfully constructed on the all-oxide Ga 2 O 3 /V 2 O 5 thin-film heterojunction. With a type-I straddling band alignment, the Ga 2 O 3 /V 2 O 5 heterostructure demonstrated an obvious photovoltaic effect with an open-circuit voltage of 0.4 V. The large bandgap (5.01 eV) of $\beta $ -Ga 2 O 3 and the effective electron–hole pair separation within heterointerface produced a superhigh solar-blind spectral discriminability for the Ga 2 O 3 /V 2 O 5 heterojunction PD, with deep-ultraviolet (DUV)/visible rejection ratio ( ${R}_{{240}}/{R}_{{400}}$ ) of 6.0 $\times 10^{{4}}$ , photo-to-dark current ratio (PDCR) of $2.6 \times 10^{{7}}$ , on/off switching ratio of $1.87\times 10^{{5}}$ , and specific detectivity of 7.8 $\times 10^{{13}}$ Jones. The largest responsivities in self-powered mode (0 V) and power-supply mode (−5 V) were 19.8 and 79.2 mA/W, respectively. The excellent self-powered photodetection performance of Ga 2 O 3 /V 2 O 5 oxide heterojunction provides a new strategy for next-generation energy-conservation solar-blind PDs.

关键词： Heterojunctions Absorption Photonic band gap Optical device fabrication X-ray scattering Vanadium Photodetectors

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network

A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781665482271

Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to reconstruct high quality images in real time, this paper presents a hybrid method which combines the Born iterative Gaussian mixture model generalized approximate message passing (BI-GMM-GAMP) algorithm with a convolutional neural network (CNN). To be specific, BI-GMM-GAMP is first used for obtaining the preliminary images. Subsequently, these pictures are used for training U-Net. Experiments show the validity of this method.

关键词： Training Inverse problems Message passing Electromagnetic scattering Approximation algorithms Real-time systems Convolutional neural networks

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： microwave integrated circuits Power demand Pipelines Layout Voltage microwave circuits Calibration

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