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Science China Materials 2024年第2期67卷 629-641页

作者：卞敬周兴成周翔马林峰朱先军李建民刘淑娟赵强 College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽... 详细信息

具有动态可调电磁屏蔽性能的电磁干扰屏蔽材料备受关注,但其目前仍然存在制备复杂、厚度大、触发方式不便、调节范围窄等缺点.我们通过将尖刺镍微粒精确地分散到聚二甲基硅氧烷基体中形成预连接的链状结构,制备出了具有可开关电磁屏蔽性能的弹性体材料.弹性体在机械拉伸和释放过程中表现出连续和可逆的电磁干扰屏蔽性能.原始弹性体具有良好的阻抗匹配和低介电损耗,允许大部分电磁波通过.拉伸使预连接的短链彼此接触,在内部形成大量的微尺度导电网络,显著增强了电导损耗能力,实现了较强的电磁干扰屏蔽能力.此外,我们通过无线应变传感系统验证了智能电磁干扰屏蔽弹性体的应用潜力,证明了可穿戴智能电磁干扰屏蔽精确监测人体运动的可能性.

关键词： adjustable electromagnetic interference shielding conductive elastomer electromagnetic sensing negative piezoresistivity

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An 8–26 GHz Passive Mixer with Excellent Port Matching Utilizing Marchand Balun and Capacitor Compensation

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Chinese Journal of Electronics 2025年第2期34卷 422-428页

作者： Zhang Yi Zhuang Yuhang Zhang Hu Yang Lei Wang Jing Zhang Changchun Guo Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China CNRS AstroParticule et Cosmologie Université Paris Cité Paris 75013 France Guobo Electronics Co. Ltd. Nanjing 211111 China

In this study, a broadband monolithic microwave integrated circuit (MMIC) double-balanced mixer designed for operation within the frequency range of 8–26 GHz is presented. The design is implemented using a 0.15 μm GaAs process. Traditional Marchand baluns, when applied to wideband mixers, face challenges in simultaneously achieving broad bandwidth and good port matching characteristics. To address this issue, we employ a spiral Marchand balun with a compensation capacitor. This innovative approach not only maintains the mixer’s wide bandwidth but also enhances the matching between the local oscillator (LO) and radio frequency (rf) ports. Additionally, it significantly simplifies the complexity of designing the matching circuit. The optimization principle of the compensation capacitor is elaborated in detail within this paper. Experimental results demonstrate that, with an LO power of 14 dBm, the conversion loss remains below 8.5 dB, while the voltage standing wave ratio (VSWR) of the LO and IF ports is less than 2 and the VSWR of the rf port is below 2.4. In comparison with existing literature, our designed mixer exhibits a broader bandwidth and lower loss.

关键词： GaAs Passive double-balanced mixer Compensation capacitor Monolithic microwave integrated circuit (MMIC)

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The growth and expansive applications of amorphous Ga_(2)O_(3)

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Chinese Physics B 2023年第8期32卷 52-68页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory for Organic Electronics and Information Displays(KLOEID)&Institute of Advanced Materials(IAM) Jiangsu Key Laboratory for BiosensorsJiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and AstronauticsMinistry of Industry and Information TechnologyNanjing 211106China

As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,*** from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum ***,a-Ga_(2)O_(3)extremely facilitates important applications in various applied ***,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are ***,potential methods to optimize the film properties are proposed by right of the inspiration from some recent ***,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.

关键词： amorphous-Ga_(2)O_(3) thin film functional application

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process 8

Design of a Broadband High Flatness Drive Amplifier Based on...

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Huang, Jingjing Lin, Jie Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In the rf front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the rf front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than -12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers. © 2023 IEEE.

关键词： Equalizers

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Design of a Broadband Miniaturized Filter Power Amplifiers 8

Design of a Broadband Miniaturized Filter Power Amplifiers

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Liao, Xiang Huang, Jingjing Ying, Shu Hu, Shanwen Wang, Zixuan Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In order to meet the application requirements of rf front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers. © 2023 IEEE.

关键词： Efficiency

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A Compact Low-Loss Bi-directional Amplifier for Ku-band 8

A Compact Low-Loss Bi-directional Amplifier for Ku-band

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Lin, Jie Liao, Xiang Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200∗200 μ m2, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars. © 2023 IEEE.

关键词： Insertion losses

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Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Gradient Algorithm on the Fixed-Rank Matrix Manifold

Hybrid-Field Channel Estimation for XL-MIMO: A Proximal Grad...

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IEEE International Conference on Communications (ICC)

作者： Wanyue Zhang Yunchao Song Chen Liu Zheng Huang Mujun Qian College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9781728190549

ISBN: (纸本)9781728190556

This paper investigates hybrid-field channel estimation for extremely large-scale MIMO (XL-MIMO) systems. Different from the previous algorithms based on sparsity, the proposed algorithm considers both the low-rank structure and the sparsity of the channel, leading to a more accurate estimation performance. Particularly, we formulate the estimation problem of the hybrid-field channel as a sparse matrix recovery problem with a fixed-rank constraint. However, this problem encounters two challenges: the non-smooth $\ell_{1}-\mathbf{norm}$ term and the non-convex fixed-rank matrix constraint. To address these challenges, we employ the proximal operator to handle the non-smooth $\ell_{1}-\mathbf{norm}$ term and consider the set of matrices with a fixed rank as the fixed-rank matrix manifold. Then a fixed-rank matrix manifold-based proximal gradient (FRM-PG) algorithm is proposed to smoothly search the solution on the fixed-rank matrix manifold, where the descent direction is derived in each iteration. Simulation results demonstrate that the proposed algorithm outperforms the classical channel estimation algorithms.

关键词： Manifolds Accuracy Simulation Channel estimation Estimation Sparse matrices Optimization

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A 3D Crystal plasticity finite element model for a 3D package under drop impact

A 3D Crystal plasticity finite element model for a 3D packag...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Shijiao Liu Yujie Cheng Linhai Gan Shanwen Hu Zhikuang Cai Lu Liu The College of International Circuit Science and Engineering National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

As one of the most vulnerable positions in the microelectronic package structure, the defect of the solder joint may result in the breakdown of the entire electronic package. Researching the deformation behavior of solder joints in various kinds of loads is significant. The micron-sized solder joints may only contain one or several grains, the traditional macroscopic phenomenology constitutive model cannot reasonably reflect the grain deformation caused by crystalline sliding. A 3D crystal plastic finite element (CPFE) model of 40 Oriented Grains is set up to study the deformation behavior of Sn-3.0Ag-0.5Cu (SAC305) at various strain rates of 1%s -1 , 0.1s -1 , 0.01%s -1 and different temperatures of 298K, 348K, and 398K. Using the Crystal Plasticity Theory, the deformation behavior of every grain, and the mean stress and strain relation of the structure is achieved by means of homogenization. The model is used to simulate monoaxial tension testing of SAC305 solders under various strain rates of 1%s -1 , 0.1s -1 , and 0.01%s -1 , and different temperatures of 298K, 348K, and 398K. Based on the stress and strain relation of experiment data, the relative parameters of the model were adjusted. The results show that the Proper Precision of the SAC305 solder joints under various loading conditions can be used to describe the stress and strain behavior. On this basis, a 3D package finite element model with two chips is established to calculate the stress and non-elastic strain under the impact of dropping, and the sub-model analysis of solder joints in the package is carried out by using the constitutive model and a study was made on the deformed state of the solder joints. By analyzing the influence of different dropping heights (1m, 10m, 20m) and dropping gestures (face-down, right-side-up, and vertical-fall) on the deformation of the electronic package structure, the most vulnerable position of the package structure can be found out, which can provide suggestions for

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Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

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Science China(Technological Sciences) 2024年第11期67卷 3477-3484页

作者： YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical ***,we construct a high-performance Ga_(2)O_(3)photodetector realized by *** high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated ***,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

关键词： Ga_(2)O_(3) back-illuminated solar-blind photodetector

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A Review of Intelligent Design for Test Based on Machine Learning

A Review of Intelligent Design for Test Based on Machine Lea...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Zeyu Zhao Zhikuang Cai National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

In recent years, with the development of post-Moore era, integrated circuit architecture is complex and test cost is increasing. How to apply efficient, reliable, fast and sustainable ideas to integrated circuit design has become a research hotspot in this field. Machine Learning, by virtue of its ability to quickly process abundant data information, shines in the field of Design For Test, which aims to improve the reliability of integrated circuit products and reduce design costs. In this paper, we introduce the application of Machine Learning in scan compression, Automatic Test Pattern Generation algorithm, the Test Pattern Generator in Built-In-Self- Test and test power. In addition, we prospect the foreground application of Machine Learning application in scan test, Automatic Test Pattern Generation, Built-In-Self- Test and test power.

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