咨询与建议

限定检索结果

文献类型

  • 2 篇 期刊文献
  • 2 篇 会议

馆藏范围

  • 4 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 3 篇 工学
    • 2 篇 化学工程与技术
    • 1 篇 材料科学与工程(可...
    • 1 篇 冶金工程
    • 1 篇 计算机科学与技术...
    • 1 篇 建筑学
  • 2 篇 理学
    • 1 篇 物理学
    • 1 篇 化学
    • 1 篇 生物学

主题

  • 1 篇 electrochemistry
  • 1 篇 dynamic random a...

机构

  • 1 篇 process technolo...
  • 1 篇 dram technology ...
  • 1 篇 next generation ...
  • 1 篇 next generation ...
  • 1 篇 dram technology ...
  • 1 篇 faculty of techn...
  • 1 篇 next-generation ...

作者

  • 1 篇 miyata seizo
  • 1 篇 kim b.c.
  • 1 篇 sone masato
  • 1 篇 kim s.h.
  • 1 篇 kim b.s.
  • 1 篇 i.y. yoon
  • 1 篇 ichihara shoji
  • 1 篇 b.j. kuh
  • 1 篇 s.h. park
  • 1 篇 s.w. park
  • 1 篇 han j.w.
  • 1 篇 oh j.h.
  • 1 篇 j.w. han
  • 1 篇 k.j. park
  • 1 篇 s.h. shin
  • 1 篇 j.c. shin
  • 1 篇 k.s. lee
  • 1 篇 k.n. kim
  • 1 篇 s.m. park
  • 1 篇 nakahara masao

语言

  • 2 篇 英文
  • 1 篇 日文
  • 1 篇 其他
检索条件"机构=Next Generation Process Development"
4 条 记 录,以下是1-10 订阅
排序:
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM
Ongoing Evolution of DRAM Scaling via Third Dimension -Verti...
收藏 引用
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
作者: Han, J.W. Park, S.H. Jeong, M.Y. Lee, K.S. Kim, K.N. Kim, H.J. Shin, J.C. Park, S.M. Shin, S.H. Park, S.W. Lee, K.S. Lee, J.H. Kim, S.H. Kim, B.C. Jung, M.H. Yoon, I.Y. Kim, H. Jang, S.U. Park, K.J. Kim, Y.K. Kim, I.G. Oh, J.H. Han, S.Y. Kim, B.S. Kuh, B.J. Park, J.M. Dram Technology Development Hwaseong Korea Republic of Next Generation Process Development Samsung R&d Center Hwaseong Korea Republic of
For the past decades, the density of DRAM has been remarkably increased by making access transistors and capacitors smaller in size per unit area. However, shrinking devices far beyond the 10 nm process node increasin... 详细信息
来源: 评论
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -
Ongoing Evolution of DRAM Scaling via Third Dimension -Verti...
收藏 引用
Symposium on VLSI Technology
作者: J.W. Han S.H. Park M.Y. Jeong K.S. Lee K.N. Kim H.J. Kim J.C. Shin S.M. Park S.H. Shin S.W. Park J.H. Lee S.H. Kim B.C Kim M.H. Jung I.Y. Yoon H. Kim S.U. Jang K.J. Park Y.K. Kim I.G. Kim J.H Oh S.Y. Han B.S. Kim B.J. Kuh J.M. Park DRAM Technology Development Hwaseong Korea Next Generation Process Development Samsung R&D Center Hwaseong Korea
For the past decades, the density of DRAM has been remarkably increased by making access transistors and capacitors smaller in size per unit area. However, shrinking devices far beyond the 10 nm process node increasin...
来源: 评论
The Broad Institute-Six Years Later
收藏 引用
CHEMISTRY & BIOLOGY 2010年 第4期17卷 311-312页
作者: McCarthy, Alice Main Text “In June 2003 the scientific and medical communities at MIT Harvard University and its affiliated hospitals and the Whitehead Institute banded together as collaborating partners to form the Eli and Edythe L. Broad Institute based in Cambridge MA. The Broad Institute established with initial funding from a $100 million philanthropic donation from the Los Angeles-based Broad family was primarily viewed as a marriage between the Whitehead Institute's Center for Genome Research (WICGR) and the Harvard Institute of Chemistry and Cell Biology (ICCB). Eli Broad founder and chairman of AIG SunAmerica Inc. explained “the purpose of the Broad Institute is to create a new type of research institute to build on the accomplishments of the human genome project and to move to clinical applications to both prevent and cure diseases.” Every Thursday morning we meet with perhaps 20 faculty members and 100 other researchers to discuss what we're all doing and should be doing next. -David Altschuler This paragraph was written five years ago when the Broad Institute was in its very earliest days as a life science research community (McCarthy 2005). Since that time “the Broad” as it's known has kept true to Eli Broad's vision having attracted a talented group of researchers faculty trainees and professional staff. This 1600 person research community known internally as “Broadies” includes faculty staff and students from throughout the MIT and Harvard biomedical research communities and beyond with collaborations spanning over a hundred private and public institutions in more than 40 countries worldwide. “What is special about the Broad is that we have people from Harvard MIT and the Harvard hospitals come together and work on problems of shared interest that could not be solved in their own individuals labs” explains David Altshuler M.D. Ph.D. Deputy Director and one of the Broad's six core faculty members. “These problems require expertise beyond any one principal investigator and in
来源: 评论
The study of the electrochemical characteristics of the metallic materials in nickel plating solution under the super critical carbon dioxide fluid and the selection for the construction materials in this environment
Zairyo to Kankyo/ Corrosion Engineering
收藏 引用
Zairyo to Kankyo/ Corrosion Engineering 2004年 第3期53卷 123-129页
作者: Sato, Nobuyoshi Tamura, Kouichi Nakahara, Masao Sone, Masato Ichihara, Shoji Miyata, Seizo Faculty of Technology Tokyo Univ. of Agric. and Technology 2-24-16 Naka-cho Koganei-shi Tokyo 184-8588 Japan Next-generation Inst. Maintenance T. Asahi Engineering Co. LTD 1-8 Kohnan 4-chome Minato-Ku Tokyo 108-0075 Japan Process Technology Development Asahikasei Corporation 1-31-1 Yakoh Kawasaki-ku Kawasaki 210-0863 Japan
Some studies have been performed on the application of the supercritical fluid environment to the extracting separation, the decomposition of the pollutant and the synthesis of the organic compound. One of the problem... 详细信息
来源: 评论