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InfoTech at Aerospace: Advancing Contemporary Aerospace Technologies and Their Integration

作者： Litt, Jonathan S. Turso, James A. Shah, Neerav Shane Sowers, T. Karl Owen, A. Army Research Laboratory Glenn Research Center Cleveland OH 44135 QSS Group Inc. Cleveland OH 44135 NASA Glenn Research Center Cleveland OH 44135 Analex Corporation Brook Park OH 44142 Vehicle Technology Directorate Mail Stop 77-1 21000 Brookpark Road Cleveland OH 44135 AIAA Research and Development Northrop Grumman Ship Systems M/S 7000-02 P.O. Box 149 Pascagoula MS 39568-0149 Flight Dynamics Analysis Branch NASA Goddard Space Flight Center 8800 Greenbelt Road Greenbelt MD 20771-0001 Controls and Dynamics Branch Mail Stop 77-1 21000 Brookpark Road Cleveland OH 44135 Vehicle Technology Directorate Mail Stop 301-3 21000 Brookpark Road Cleveland OH 44135

ISBN: (纸本)1563477394

A retrofit architecture for intelligent turbofan engine control and diagnostics that changes the fan speed command to maintain thrust is proposed and its demonstration in a piloted flight simulator is described. The objective of the implementation is to increase the level of autonomy of the propulsion system, thereby reducing pilot workload in the presence of anomalies and engine degradation due to wear. The main functions of the architecture are to diagnose the cause of changes in the engine's operation, warning the pilot if necessary, and to adjust the outer loop control reference signal in response to the changes. This requires that the retrofit control architecture contain the capability to determine the changed relationship between fan speed and thrust, and the intelligence to recognize the cause of the change in order to correct it or warn the pilot. The proposed retrofit architecture is able to determine the fan speed setting through recognition of the degradation level of the engine, and it is able to identify specific faults and warn the pilot. In the flight simulator it was demonstrated that when degradation is introduced into an engine with standard fan speed control, the pilot needs to take corrective action to maintain heading. Utilizing the intelligent retrofit control architecture, the engine thrust is automatically adjusted to its expected value, eliminating yaw without pilot intervention.

关键词： Intelligent control

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Ion implanted SiC static induction transistor with 107 W output power and 59% power added efficiency under CW operation at 750 MHZ

Ion implanted SiC static induction transistor with 107 W out...

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作者： De Salvo, G.C. Esker, P.M. Flint, T.A. Ostop, J.A. Stewart, E.J. Knight, T.J. Petrosky, K.J. Van Campen, S.D. Clarke, R.C. Bates, G.M. Northrop Grumman Electronic Systems Advanced Materials and Semiconductor Device Technology Center Baltimore MD 21203 United States

Ion implanted silicon carbide static induction transistor (SIT) with 107 W output power and 59% power added efficiency under cw operation at 750 MHz was described. Identical transistor die from a single wafer of ion implanted SIT devices was selected, each having a layout of 10 device cells per die, with each cell having a gate periphery equal to 1.30 cm, and an active area of 2.92 × 10-4 cm2. To minimize heating under cw operation, only 10 cells were bonded into a transistor package. This was accomplished by attaching only 2 die to a package, and wire bonding every other cell in each die.

关键词： Silicon carbide

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ION IMPLANTEDSiCSTATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZ

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International Journal of High Speed Electronics and Systems 2004年第3期14卷 906-908页

作者： G. C. DE SALVO P. M. ESKER T. A. FLINT J. A. OSTOP E. J. STEWART T. J. KNIGHT K. J. PETROSKY S. D. VAN CAMPEN R. C. CLARKE G. M. BATES Northrop Grumman Electronic Systems Advanced Materials and Semiconductor Device Technology Center Baltimore Maryland 21203 USA

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Ion implanted SiC static induction transistor with 107 W output power and 59% power added efficiency under CW operation at 750 MHz

Ion implanted SiC static induction transistor with 107 W out...

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IEEE Conference on High Performance Devices

作者： G.C. De Salvo P.M. Esker T.A. Flint J.A. Ostop E.J. Stewart T.J. Knight K.J. Petrosky S.D. Van Campen R.C. Clarke G.M. Bates Advanced Materials and Semiconductor Device Technology Center Northrop Grumman Electronic Systems Baltimore MD USA

There are many commercial applications which require high RF CW power in the kilowatt to megawatt range. To date, these high RF power requirements can only be accomplished by incorporating traveling wave tubes (TWT) or inductive output tubes (IOT). However, recent advances in the output power capability of SiC power devices for radar systems now suggest that high power SiC static induction transistors (SIT) can be used to develop a 10 kW solid state RF power amplifier. From analysis of existing high power RF amplifiers, development of a transistor cell that can produce 10 W CW output power would provide the necessary building block for assembly of a 10 kW power amplifier. As a first step in this development, existing ion implanted SiC SIT device cells fabricated at northrop grumman were packaged and tested for CW operation at 750 MHz. Identical transistor die from a single wafer of ion implanted SIT devices were selected, each having a layout of 10 device cells per die, with each cell having a gate periphery equal to 1.30 cm, and an active area of 2.92 /spl times/ 10/sup -4/ cm/sup 2/. To minimize heating under CW operation, only 10 cells were bonded into a transistor package. This was accomplished by attaching only 2 die to a package, and wire bonding every other cell in each die. In this manner, only 5 cells from each die were connected together, and the remaining 5 cells were not used, thus allowing for improved heat spreading.

关键词： Silicon carbide Power generation Radio frequency Radiofrequency amplifiers Packaging Power amplifiers Transistors High power amplifiers Bonding Radar

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Vacuum electronics development at northrop grumman [TWTs]

Vacuum electronics development at Northrop Grumman [TWTs]

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International Conference on Vacuum Electronics

作者： V.O. Heinen K.E. Kreischer M.A. Basten D.A. Gallagher J.C. Tucek F. Scafuri D.R. Whaley Advanced Defensive Systems Technology Center Northrop Grumman Corporation Rolling Meadows IL USA Electron Devices L-3 Communications Electron Devices USA

Summary form only given. The past decade has seen revolutionary advancements in traveling wave tube (TWT) performance, with single tube broadband TWTs having a 2-18 GHz bandwidth, and narrowband TWTs having efficiencies near 65%. The development of RF devices using cold cathode field emitter arrays as a replacement for the thermionic cathode is also underway. Millimeter wave TWTs show good performance between 18 and 40 GHz. Several cusp guns have been designed, built and tested, for operation in gyro devices at 35 and 94 GHz. Folded waveguide design and fabrication techniques for 100 GHz operation are also being conducted. Recent results of the above vacuum electronics development programs are presented.

关键词： Bandwidth Cathodes Guns Optical device fabrication Electron devices Electronic mail Electron tubes Power generation Manufacturing Multichip modules

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Enabling the U.S. engineering workforce to perform: Recognizing the importance of industrial engagement in professional graduate engineering education

Enabling the U.S. engineering workforce to perform: Recogniz...

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ASEE 2004 Annual Conference and Exposition, "Engineering Researchs New Heights"

作者： Snellenberger, Jay M. Quick, David H. Davis, Isadore T. Tidwell, Joseph P. O'Brien, Joe Haynes, Ray M. Depew, Dennis R. Dunlap, Duane D. Keating, Donald A. Stanford, Thomas G. Rolls-Royce Corporation Raytheon Missiles Boeing Company Hewlett-Packard Company Northrop Grumman Space Technology Purdue University Western Carolina University University of South Carolina Strat. Eng. and Business Improvement Rolls-Royce Corporation Indianapolis IN R and D Customer Requirements Allison Advanced Development Company Rolls-Royce Corporation Indianapolis IN Engineering University Relations Raytheon Missile Systems Tucson AZ Engineering and Technical Education Boeing Company Meza AZ ASEE Corporate Members Council Hewlett-Packard Company Palo Alto CA University Alliances and Development Office of the Chief Engineer Northrop Grumman Space Technology Redondo Beach CA School of Technology Purdue University Department of Engineering Western Carolina University Graduate Studies Division of ASEE Department of Mechanical Engineering University of South Carolina Department of Chemical Engineering University of South Carolina

The importance of industrial engagement in professional education of the U.S. engineering workforce is discussed. The work of National collaborative in enacting purposeful reforms at graduate professional level is also presented. The investments made by the industry in training its workforce are expected to strengthen their skills. The quality of graduate education of engineers has also increased due to rise in demand for technical and professional skills in the U.S. engineering workforce.

关键词： Engineering education

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LIGA fabrication of folded waveguide circuits 4

LIGA fabrication of folded waveguide circuits

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4th IEEE International Vacuum Electronics Conference, IVEC 2003

作者： Tucek, J.C. Whaley, D.R. Gallagher, D.A. Heinen, V.O. Kreischer, K.E. Divan, R. Mancini, D.C. Yaeger, J. Ryding, D. Advanced Defensive Systems Technology Center Northrop Grumman Corporation 600 Hicks Road Rolling MeadowsIL60008 United States Advanced Photon Source Argonne National Laboratory ArgonneIL60436 United States

ISBN: (纸本)0780376994

Economical, compact, high-frequency (100 GHz), wideband (20 GHz) power amplifiers providing high-power (1 00 W) are needed for emerging space applications including satellite-tosatellite and satellite-to-ground communication and data links, satellite protection and tracking, jamming, missile detection and tracking, remote sensing, radar imaging, and terrain mapping. Additional DoD needs in millimeter wave electronic warfare include radar, communication, and active missile seeker radar for missile defense. © 2003 IEEE.

关键词： Power amplifiers

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Vacuum electronics development at northrop grumman

Vacuum electronics development at Northrop Grumman

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International Conference on Vacuum Electronics

作者： V.O. Heinen K.E. Kreischer M.A. Basten D.A. Gallagher J.C. Tucek F. Scafuri D.R. Whaley Advanced Defensive Systems Technology Center Northrop Grumman Corporation Rolling Meadows IL USA

This paper presents some of the ongoing developments of vacuum electronics at northrop grumman. development of RF devices using cathode field emitter arrays as a replacement of thermionic cathode, extending bandwidth for a single tube to 2-18 GHz, development of narrowband TWTs with higher efficiencies, folded waveguide design and fabrication techniques, LIGA fabrication of the intricate waveguide structures are some of the recent developments of the northrop grumman Corporation.

关键词： Bandwidth Cathodes Guns Optical device fabrication Power generation Manufacturing Multichip modules Narrowband Radio frequency Life testing

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MPM as a enabling technology for a major product upgrade: the ALQ-162 pulse Doppler/PowerPlus Program

MPM as a enabling technology for a major product upgrade: th...

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International Conference on Vacuum Electronics

作者： M.A. Basten J. Perkins M. Rein J. Duthie Advanced Defensive Systems Technology Center Northrop Grumman Corporation Rolling Meadows IL USA

In this paper, we discuss about the MPM (Microwave Power Module) technology and vacuum power booster components of the PowerPlus upgrade. One example is the Pulse Doppler/PowerPlus upgrade to the ALQ-162 RF countermeasures system. The new, more efficient MPM based approach is capable of providing over twice the RF output power of the original TWTA with no impact to prime power or cooling requirements, and with the same form factor and weight. In the upgraded system a pulse-Doppler capability is added and increased output power is provided in order to increase jamming effectiveness of the system.

关键词： Radio frequency Power generation Microwave technology Assembly Vacuum systems Production systems Pulse amplifiers Power amplifiers Cooling Multichip modules

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LIGA fabrication of folded waveguide circuits

LIGA fabrication of folded waveguide circuits

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International Conference on Vacuum Electronics

作者： J.C. Tucek D.R. Whaley D.A. Gallagher V.O. Heinen K.E. Kreischer R. Divan D.C. Mancini J. Yaeger D. Ryding Advanced Defensive Systems Technology Center Northrop Grumman Corporation Rolling Meadows IL USA Advanced Photon Source Argonne National Laboratory Argonne IL USA

Economical, compact, high-frequency (100 GHz, wideband (20 GHz) power amplifiers providing high-power (100 W) are needed for emerging space applications. A major challenge in realizing high frequency power amplifiers is the fabrication of the folded waveguide (FWG) vacuum power booster. LIGA fabrication offers the potential of significant cost savings through batch fabrication of folded waveguide circuits. The completed FWG will be a solid piece of copper, providing efficient cooling needed for a high power RF circuit. Additionally, with the LIGA technique, one has the unique ability to fabricate, as one unit, both the circuit and the waveguide transition with the required dimensional tolerance, thus eliminating a major source of RF mismatch. The Deep X-ray Lithography (DXRL) exposure and polymethylmethacrylate (PMMA) development parameters have been optimized for the pattern layout and the PMMA thickness. The aspect ratio of the developed PMMA is 6:1, and the structures show good sidewall verticality and surface roughness. Following development of the PMMA, the circuits have been electroformed with copper, and examples of the circuits are shown.

关键词： Optical device fabrication Circuits Broadband amplifiers High power amplifiers Copper Radio frequency Power generation economics Radiofrequency amplifiers Costs Solids

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