This paper reports a high efficient phosphoric acid fuel cell by employing a micro/nano composite proton exchange membrane incorporating glass microfiber (GMF) sealed by polytetrafluoroethylene (PTFE) nano-porous film...
This paper reports a high efficient phosphoric acid fuel cell by employing a micro/nano composite proton exchange membrane incorporating glass microfiber (GMF) sealed by polytetrafluoroethylene (PTFE) nano-porous film. This multilayer membrane not only possesses both thermal and chemical stability at phosphoric acid fuel cell working temperature at 150~220°C but also is cost effective. As a result, the inclusion of the high porosity and proton conductivity from glass microfiber and the prevention of phosphoric acid leakage from PTEF nano film can be achieved at the same *** composite membrane maximum proton conductivity achieves 0.71 S/cm at 150 °C from AC impedance analysis, much higher than common phosphoric acid porous membranes For single cell test, The GMF fuel cell provides a 63.6mW/cm2 power density at 200mA/cm2 current density while GMF plus methanol treated PTFE (GMF+mPTFE) provides 59.2mW/cm2 power density at 160mA/cm2 current density for hydrogen and oxygen supply at 150 °C. When we change the electrodes that are more suited for phosphoric acid fuel cell, the GMF+mPTFE single cell gets higher performance which achieve 296mW/cm2 power density at 900mA/cm2 current density for hydrogen and oxygen supply at 150 °C.
BiI3 is a wide band-gap compound semiconductor with a high effective atomic number that is anticipated to exhibit higher detection efficiency than other compound semiconductors such as HgI2, PbI2, and CdZnTe. This mak...
BiI3 is a wide band-gap compound semiconductor with a high effective atomic number that is anticipated to exhibit higher detection efficiency than other compound semiconductors such as HgI2, PbI2, and CdZnTe. This makes BiI3 of particular interest for moderate and high energy gamma-ray detection applications. However, the low resistivity of BiI3 results in high leakage currents and degrades the electrical properties and detecting performance of the detectors. Here we show that the main reason for the low resistivity in BiI3 is due to the high volatility of iodine and the high concentration of intrinsic Schottky defects. Furthermore, we will discuss novel defect engineering strategies that successfully mitigate the obstacles associated with iodine vacancies in the material. Density functional theory (DFT) calculations, as well as experimentally measured electrical properties, and radiation response will be presented for undoped and Sb-doped BiI3 (SBI) single crystals grown via the vertical Bridgman growth technique. Most importantly, we will demonstrate the first ever recorded gamma-ray spectrum using BiI3-based detectors.
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