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Frontiers in Optics, FIO 2013

作者： Biao, Sun Anting, Wang Chun, Gu Guoliang, Chen Lixin, Xu Qiwen, Zhan Department of Optics and Optical Engineering University of Science and Technology of China Hefei 230026 China Electro-Optics Program University of Dayton Dayton OH 45469 United States

We demonstrate a figure-8 fiber laser emitting radially polarized, mode locked pulses based on few-mode fiber Bragg grating. The laser emits mode-locked pulses with 7-ns duration and 1.21 MHz repetition and operates a... 详细信息

ISBN: (纸本)9781557529879

关键词： Mode-locked fiber lasers

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Displacement measurement using speckle correlation with reduced number of database patterns

Displacement measurement using speckle correlation with redu...

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28th Annual Meeting of the American Society for Precision engineering, ASPE 2013

作者： Farsad, Mahsa Goch, Gert Evans, Chris Optical Science and Engineering Graduate Program Center for Precision Metrology University of North Carolina Charlotte NC United States Department of Mechanical Engineering University of North Carolina Charlotte NC United States

ISBN: (纸本)9781887706636

This paper compares three methods of displacement measurement with 1 μm resolution using speckle pattern correlation. It shows to what extent the correlation curvecan be regarded as constant over a 100 μm interval and how it is possible to use this curve to reduce the number of required database patterns. Reducing the required database patterns makes it possible to expand the displacement measurement using speckle correlation to longer ranges and to two dimensions. This may lead to development of a two dimensional absolute scale for machine tools which could be fast and low cost.

关键词： Displacement measurement

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Microstructured Gel Polymer Electrolyte and an Interdigital Electrode-Based Iontronic Barometric Pressure Sensor with High Resolution over a Broad Range

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ACS Applied Materials and Interfaces 2023年第50期15卷 58976-58983页

作者： Liu, Yulu Yang, Xi Li, Jie Zhang, Kaihang Wang, Haobin Zeng, Xiangyu Rajagopalan, Pandey Chu, Fengjian Shuaibu, Nazifi Sani Zhang, Liang Zhang, Lei Luo, Jikui Wang, Xiaozhi College of Information Science & Electronic Engineering Zhejiang University Hangzhou310027 China International Joint Innovation Center Zhejiang University Haining314400 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China Cross College of Elite Program National Cheng Kung University 701 Taiwan Research Center for Humanoid Sensing and Perception Zhejiang Lab Hangzhou311100 China State Key Laboratory of Modern Optical Instrumentation College of Optical Science and Engineering Zhejiang University Hangzhou310027 China

We present a novel iontronic barometric pressure sensor based on a gel polymer electrolyte and interdigital electrodes with a much simpler structure than that of existing devices. By introducing high-density microstructures on the gel polymer electrolyte and one side electrode arrangement configuration, the developed sensor offers high performances with an ultrahigh resolution of 10 Pa, an ultrawide barometric pressure-response range from −92 to 7 kPa, a fast response time of ∼15 ms, and excellent long-term stability. The single pressure sensor is able to detect positive and negative barometric pressures without needing any additional means and can operate as a barometric altimeter with a resolution of about one-floor height. The performances of the sensors significantly surpass those of existing barometric pressure sensors. This work provides a new strategy for making high-performance barometric pressure sensors that are highly sought for commercial applications such as altitude detection, negative pressure ambulance, and consumer electronics. © 2023 American Chemical Society

关键词： Pressure sensors

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Minimizing task-specific uncertainty in CMM-Based freeform optics metrology 31

Minimizing task-specific uncertainty in CMM-Based freeform o...

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31st Annual Meeting of the American Society for Precision engineering, ASPE 2016

作者： Uwakwe, Michael U. Evans, Christopher J. Optical Science and Engineering Program University of North Carolina at Charlotte NC28223 United States Center for Precision Metrology University of North Carolina at Charlotte NC28223 United States

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Photoluminescence of CdSe/ZnS quantum dots in GaN/quantum dots/GaN wafer bonded system

Photoluminescence of CdSe/ZnS quantum dots in GaN/quantum do...

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作者： Li, Y. Giles, A. Stokes, E. Optical Science and Engineering Graduate Program Department of Physics and Optical Science University of North Carolina at Charlotte 9201 University City Boulevard Charlotte NC 28223 United States Nanoscale Science Graduate Program Department of Chemistry University of North Carolina at Charlotte 9201 University City Boulevard Charlotte NC 28223 United States Department of Electrical and Computer Engineering University of North Carolina at Charlotte 9201 University City Boulevard Charlotte NC 28223 United States

ISBN: (纸本)9781607681908

Wafer bonding technology is applied to the GaN/quantum dots/GaN system, where CdSe/ZnS Quantum Dots serve as both the active layer and the binding layer. Photoluminescence is observed from quantum dots following wafer bonding at various temperatures under ultra high vacuum condition. Temperature dependences of bond strength and photoluminescence properties are characterized. Annealing at elevated temperature to form wafer bonds degrades photoluminescence intensity and slightly blue shifts the wavelength. Transmission Electron Microscopy is applied to study the physical properties of vacuum annealed QDs, in which agglomeration is observed. ©The Electrochemical Society.

关键词： Gallium nitride

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CsPbBr3 perovskite quantum-dot paper exhibiting a highest 3 dB bandwidth and realizing a flexible white-light system for visible-light communication

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Photonics Research 2021年第12期9卷 2341-2350页

作者： KONTHOUJAM JAMES SINGH XIAOTONG FAN ANNADA SANKAR SADHU CHUN-HO LIN FANG-JYUN LIOU TINGZHU WU YU-JUNG LU JR-HAU HE ZHONG CHEN TOM WU HAO-CHUNG KUO Department of Photonics&Institute of Electro-Optical Engineering College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu 30010Taiwan International Ph.D.Program in Photonics(UST) College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu 30010Taiwan Department of Electronic Science Fujian Engineering Research Center for Solid-State LightingXiamen UniversityXiamen 361005China School of Materials Science and Engineering University of New South WalesSydneyNSW 2052Australia Research Center for Applied Sciences Academia SinicaTaipei 11529Taiwan Department of Materials Science and Engineering City University of Hong KongKowloon TongHong KongChina

We propose a flexible white-light system for high-speed visible-light communication(VLC)applications,which consists of a semipolar blue InGaN/GaN single-quantum-well micro-light-emitting diode(LED)on a flexible substrate pumping green CsPbBr3 perovskite quantum-dot(PQD)paper in nanostructure form and red CdSe QD *** highest bandwidth for CsPbBr3 PQD paper,229 MHz,is achieved with a blue micro-LED pumping source and a high data transmission rate of 400 Mbps;this is very promising for VLC *** 817 MHz maximum bandwidth and a 1.5 Gbps transmission speed are attained by the proposed semipolar blue *** proposed flexible white light system and the high-bandwidth PQD paper could pave the way for VLC wearable devices.

关键词： pumping communication quantum

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Anomalous Hysteresis in Graphite/Boron Nitride Transistors

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Nano Letters 2025年 2025 May 16页

作者： Waters, Dacen Waleffe, Derek Thompson, Ellis Arreguin-Martinez, Esmeralda Fonseca, Jordan Poirier, Thomas Edgar, James H. Watanabe, Kenji Taniguchi, Takashi Xu, Xiaodong Cobden, David Yankowitz, Matthew Department of Physics University of Washington Seattle 98195 WA United States Intelligence Community Postdoctoral Research Fellowship Program University of Washington Seattle 98195 WA United States Department of Materials Science and Engineering University of Washington Seattle 98195 WA United States Tim Taylor Department of Chemical Engineering Kansas State University Manhattan 66506 KS United States Research Center for Electronic and Optical Materials National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan

Field-effect devices constructed from van der Waals (vdW) materials with hexagonal boron nitride (hBN) as gate dielectrics usually exhibit negligible hysteresis, enabling exquisitely detailed studies of diverse gate-voltage-tuned phenomena. Recently, a dramatic hysteresis effect, sometimes called the “gate doesn’t work” or “electron ratchet” effect, has been observed sporadically in otherwise typical vdW devices. Its lack of reproducibility has hindered clear identification of its origin, which has been postulated to rely on the combination of bilayer graphene with moiré patterns from rotationally aligned hBN. Here, we report observing this effect in devices with thicker graphite channels, associating it with a single graphite surface. Remarkably, the hysteresis persists at room temperature, without intentional hBN alignment, and even with a WSe₂ monolayer inserted between the graphite and hBN. Furthermore, it exhibits continuous relaxation over long time scales. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered. © 2025 American Chemical Society.

关键词： electron ratchet gate does not work effect hysteresis van der Waals field effect transistors

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Experimental measurement of growth patterns on fossil corals:Secular variation in ancient Earth-Sun distances

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Chinese science Bulletin 2010年第35期55卷 4010-4017页

作者： ZHANG WeiJia1,3,4,LI ZhengBin2,3 & LEI Yang1 1 Department of Physics,Peking University,Beijing 100871,China 2 Department of Electrical engineering and Computer science,Peking University,Beijing 100871,China 3 State Key Laboratory of Advanced optical Communication Systems & Networks,Peking University,Beijing 100871,China 4 Committee of Yuanpei Honors program,Peking University,Beijing 100871,China Department of Physics Peking University Beijing 100871 China State Key Laboratory of Advanced Optical Communication Systems & Networks Peking University Beijing 100871 China Committee of Yuanpei Honors Program Peking University Beijing 100871 China Department of Electrical Engineering and Computer Science Peking University Beijing 100871 China

In recent years,much attention has been given to the increase in the Earth-Sun distance,with the modern rate reported as 5-15 m/cy on the basis of astronomical ***,traditional methods cannot measure the ancient leaving rates,so a myriad of research attempting to provide explanations were met with unmatched *** this paper we consider that the growth patterns on fossils could reflect the ancient Earth-Sun *** mechanical analysis of both the Earth-Sun and Earth-Moon systems,these patterns confirmed an increase in the Earth-Sun *** a large number of well-preserved specimens and new technology available,both the modern and ancient leaving rates could be measured with high precision,and it was found that the Earth has been leaving the Sun over the past 0.53 billion *** Earth's semi-major axis was 146 million kilometers at the beginning of the Phanerozoic Eon,equating to 97.6% of its current *** modern leaving rates are 5-14 m/cy,whereas the ancient rates were much *** results indicate a special expansion with an average expansion coefficient of 0.57H0 and deceleration in the form of Hubble *** the basis of experimental results,the Earth's semi-major axis could be represented by a simple formula that matches fossil measurements.

关键词：地球太阳古代距离生长模式实验石珊瑚量化

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Revealing subsurface defects in semiconductors using near-field fluorescence lifetime imaging

Revealing subsurface defects in semiconductors using near-fi...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Daniel A. Bender Mansoor Sheik-Bahae Department of Physics and Astronomy Optical Science and Engineering Program University of New Mexico Albuquerque NM USA

Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization pl... 详细信息

ISBN: (纸本)9781557528599

关键词： Fluorescence Radiative recombination Surface morphology Atomic force microscopy optical microscopy optical surface waves Luminescence Atom optics Gallium arsenide Image edge detection

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Self-limited photo-assisted synthesis of silicon nanocrystals

Self-limited photo-assisted synthesis of silicon nanocrystal...

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2004 MRS Fall Meeting

作者： Chen, C.Y. Kimura, S. Sen, S. Nozaki, S. Ono, H. Uchida, K. Morisaki, H. Department of Electronic Engineering University of Electro-Communications Chofu-Shi Tokyo 182-8585 Japan 21st Century COE Program: Coherent Optical Science University of Electro-Communications Chofu-Shi Tokyo 182-8585 Japan

Anomalous growth of silicon (Si) nanocrystals (NCs) was observed during Raman scattering measurements of nanosilica SiOx (x=0.9) powder with an average diameter of 40 nm. It was found that Si NCs were formed by exposure to the laser beam. This photo-assisted synthesis is similar to the thermal synthesis of Si NCs, which forms Si NCs by thermally decomposing SiOx into Si and SiO2. However, the photo-assisted synthesis is more effective in forming Si NCs than the thermal synthesis. Even one second after irradiation of the nanosilica SiOx powder with laser, Si NCs with an average size of 5 nm were formed. The Si NC size increases with increasing the laser power and exposure time. It is interesting to observe a self-limited size for higher laser power and prolonged exposure. The photo-assisted synthesis of Si NCs is proved to be a promising technique with a wide range of applications in nanotechnology. © 2005 Materials Research Society.

关键词： Nanostructured materials

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