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WSS module technology for advanced ROADM

NTT Technical Review 2014年第1期12卷

作者： Ishii, Yuzo Ooba, Naoki Sahara, Akio Hadama, Koichi Technology Development Center NTT Electronics Corporation Japan Optical Communication Systems Business Unit Broadband System and Device Business Group NTT Electronics Corporation Japan Optical Network Device Research Group Network Hardware Integration Laboratory NTT Microsystem Integration Laboratories Japan

Wavelength selective switches (WSSs) are the key to implementing advanced reconfigurable optical add/drop multiplexing (ROADM) with colorless- directionless-contentionless (CDC) functionality, but a complex module (subsystem) requires a skillful balance combining optical, mechanical, and control design technologies. This article discusses technical issues in implementing WSS from optical, mechanical, and control perspectives.

关键词： Optical switches

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Dynamics of second harmonic in nonlinear surface acoustic waves and a proposal of its device application

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AIP Conference Proceedings 2012年第1期1474卷 398-401页

作者： Aizawa, Koji Tokunaga, Yoshiaki Program in electrical engineering and electronics Kanazawa Institute of Technology Nonoichi Ishikawa 921-8501 7-1 Ohgigaoka Japan Optoelectronics Device System Research and Development Center Kanazawa Institute of Technology Nonoichi Ishikawa 921-8501 7-1 Ohgigaoka Japan

Dynamic behavior of nonlinear surface acoustic waves (NLSAWs) generated on a piezoelectric single crystal has been much interested in application to new engineering fields from a viewpoint of the complex system. In this study, characteristics of fundamental and second-order harmonic components in NLSAWs propagating on a LiNbO₃ single crystal were investigated, and we proposed a novel photonic signal control device using the NLSAW. © 2012 American Institute of Physics.

关键词： 2ndharmonic Collision Dynamic characteristics LiNbO3 Nonlinear surface acoustic wave Optical diffraction technique

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Study of laser induced stress waves emerged by laser-target interaction

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AIP Conference Proceedings 2012年第1期1474卷 275-278页

作者： Nishiwaki, Motoaki Kogi, Mieko Aizawa, Koji Tokunaga, Yoshiaki Optelectronics Device System Research and Development Center Kanazawa Institute of Technology Nonoichi Ishikawa 921-8501 7-1 Ohgigaoka Japan Human Information System Laboratory Kanazawa Institute of Technology Hakusan Ishikawa 924-0838 3-1 Yatsukaho Japan Electrical Engineering and Electronics Kanazawa Institute of Technology Nonoichi Ishikawa 921-8501 7-1 Ohgigaoka Japan

Laser induced emergent stress wave (LIESW) generated by interaction between laser and target. LIESW can be emerged by the following complicated mechanisms: Optical breakdown, ablation and plasma formations, and stress wave with recoil momentum. We propose a method of gene transfection using LIESW. This method has several advantages such as a nonchemical, nonviral, and noninvasive and so on. In this report, we report a summary of our research. © 2012 American Institute of Physics.

关键词： Ablation Confined target Direct target Gene therapy Laser induced emergent stress wave Nonlinear phenomena

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InGaN-based blue LED grown on Si(111) substrate

InGaN-based blue LED grown on Si(111) substrate

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2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011

作者： Shuhaimi, A. Hassan, Z. Egawa, T. Low Dimensional Materials Research Centre Department of Physics University of Malaya 50603 Kuala Lumpur Malaysia Nano-Optoelectronics Research and Technology Laboratory School of Physics Universiti Sains Malaysia 11800 Minden Pulau Pinang Malaysia Research Center for Nano-Device and System Nagoya Institute of Technology Gokiso-cho Nagoya 466-8555 Aichi Japan

ISBN: (纸本)9781612848464

This paper reports fabrication and characterization of InGaN-based blue light-emitting diode (LED) grown on Si(111) substrate. The LED structure in this study was grown on 2-inch n-type Si(111) substrate by metal-organic vapor-phase epitaxy (MOVPE). A 20 nm n-AlN layer was initially grown on the Si(111) substrate as nucleation layer, followed by a stack of n-AlN/n-GaN multilayers with respective thickness of 5 and 20 nm to reduce penetration of threading dislocations into the next grown layers. Subsequently, LED device layers were grown on the n-AlN/n-GaN multilayers, with 200 nm of n-GaN contact layer, active layer with 15 pairs of 2 nm In0.16Ga0.84N wells and 10 nm In0.08Ga0.92N barriers, a 10 nm p-A1 0.08Ga0.92N electron-block layer, and a 50 nm p-GaN contact layer. The sample was fabricated into operational LED using standard device fabrication methods, with light-emission area of 500 × 500 μm2 square. Dry-etching with BCl3 gas was used to expose n-GaN layer outside of the emission area for n-type electrode pad. A Ni/Au metallization was used for p-type semi-transparent and contact electrode pad on the top p-GaN layer, and Ti/Al/Ni/Au metallization was used for n-type contact electrode pad on the exposed n-GaN layer. Additionally, AuSb/Au metallization was fabricated on the backside of n-type Si(111) substrate as n-type electrode. In current-voltage (I-V) characteristics, the minimum operating voltage at 20 mA of the device is 3.6 V, with series resistance of 29 Ohm. In electroluminescence (EL) measurement, the LED shows single emission peak at 465 nm at injected current density of 120 A/cm2, with full-width at half-maximum (FWHM) of 35 nm. In conclusion, we have successfully fabricated blue LED on Si(111) substrate with superior characteristics. © 2011 IEEE.

关键词： Gallium nitride

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6.1:Invited Paper: Digital PV Link for a Next-Generation Video Interface, and Its system Architecture

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SID Symposium Digest of Technical Papers 2012年第1期31卷

作者： Johji Mamiya Kazushi Yamauchi Takatoshi Tomooka Moriyoshi Ohara Toshio Futami Naruhiko Kasai Shinji Horino Akihiko Inoue Yuji Sato Atsurou Okazaki IBM Display Business Unit Kanagawa Japan IBM Tokyo Research Laboratory Kanagawa Japan Hitachi Ltd. Displays Chiba Japan Hitachi Ltd. Systems Development Laboratory Kanagawa Japan Sharp Co. Ltd. LCD System Device Development Center Nara Japan Toshiba LCD Division Yokohama Japan

This paper describes a high-level protocol with a packet format for video data. It not only improves data transmission, but also enhances system performance by enabling various kinds of data handling at different processing locations. From the viewpoint of the system architecture, this protocol makes it possible to mix various types of system such as PCs and other electronic devices with high-performance video data processing hardware. The functions of this protocol and its performance are explained with the compatibility of both software and hardware.

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InGaN-based blue LED grown on Si(111) substrate

InGaN-based blue LED grown on Si(111) substrate

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IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

作者： A. Shuhaimi Z. Hassan T. Egawa Low Dimensional Materials Research Centre Department of Physics Faculty of Science University of Malaya Kuala Lumpur Malaysia Nano-Optoelectronics Research and Technology Laboratory School of Physics Universiti Sains Malaysia Minden Pulau Pinang Malaysia Research Center of Nano-Device and System Nagoya Institute of Technology Nagoya Aichi Japan

This paper reports fabrication and characterization of InGaN-based blue light-emitting diode (LED) grown on Si(111) substrate. The LED structure in this study was grown on 2-inch n-type Si(111) substrate by metal-organic vapor-phase epitaxy (MOVPE). A 20 nm n-AlN layer was initially grown on the Si(111) substrate as nucleation layer, followed by a stack of n-AlN/n-GaN multilayers with respective thickness of 5 and 20 nm to reduce penetration of threading dislocations into the next grown layers. Subsequently, LED device layers were grown on the n-AlN/n-GaN multilayers, with 200 nm of n-GaN contact layer, active layer with 15 pairs of 2 nm In 0.16 Ga 0.84 N wells and 10 nm In 0.08 Ga 0.92 N barriers, a 10 nm p-Al 0.08 Ga 0.92 N electron-block layer, and a 50 nm p-GaN contact layer. The sample was fabricated into operational LED using standard device fabrication methods, with light-emission area of 500 × 500 μm 2 square. Dry-etching with BCl 3 gas was used to expose n-GaN layer outside of the emission area for n-type electrode pad. A Ni/Au metallization was used for p-type semi-transparent and contact electrode pad on the top p-GaN layer, and Ti/Al/Ni/Au metallization was used for n-type contact electrode pad on the exposed n-GaN layer. Additionally, AuSb/Au metallization was fabricated on the backside of n-type Si(111) substrate as n-type electrode. In current-voltage (I-V) characteristics, the minimum operating voltage at 20 mA of the device is 3.6 V, with series resistance of 29 Ohm. In electroluminescence (EL) measurement, the LED shows single emission peak at 465 nm at injected current density of 120 A/cm 2 , with full-width at half-maximum (FWHM) of 35 nm. In conclusion, we have successfully fabricated blue LED on Si(111) substrate with superior characteristics.

关键词： Light emitting diodes Substrates Gold Optical surface waves Quantum well devices Nickel Gallium nitride

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Carbon incorporation into substitutional silicon site by carbon cryo ion implantation and metastable recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor

Carbon incorporation into substitutional silicon site by car...

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10th International Workshop on Junction Technology, IWJT-2010

作者： Itokawa, Hiroshi Miyano, Kiyotaka Oshiki, Yusuke Onoda, Hiroyuki Nishigoori, Masahito Mizushima, Ichiro Suguro, Kyoichi Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Japan System LSI Division Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9781424458691

Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide- semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C]sub) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C]sub at a high ratio of substitution with a high doping activation. © 2010 IEEE.

关键词： Recrystallization (metallurgy)

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Impact of oxygen on Cu surface for highly reliable low-k/Cu interconnects with CuSiN and Ti-based barrier metal

Impact of oxygen on Cu surface for highly reliable low-k/Cu ...

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2010 IEEE International Interconnect Technology Conference, IITC 2010

作者： Hayashi, Y. Matsunaga, N. Wada, M. Nakao, S. Watanabe, K. Kato, S. Sakata, A. Kajita, A. Shibata, H. Device Process Development Center Corporate Research and Development Center Toshiba Corporation Isogo-ku Yokohama 235-8522 Japan System LSI Division Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9781424476763

A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line resistance increase was controlled by the oxygen at grain boundary. Low-damage process of CuOx reduction also improved voltage ramp dielectric breakdown (VRDB) property. Excellent EM performance brought about by CuSiN was kept by the combination with Ti(N)-BM, because the oxygen made Si and Ti distributions uniform at grain boundary of Cu surface by forming Ti-silicide. Cu atom transport that caused EM failure was suppressed throughout grain boundary of Cu surface. ©2010 IEEE.

关键词： Oxygen

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Impact of oxygen on Cu surface for highly reliable low-k/Cu interconnects with CuSiN and Ti-based barrier metal

Impact of oxygen on Cu surface for highly reliable low-k/Cu ...

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IEEE International Conference on Interconnect Technology

作者： Y. Hayashi N. Matsunaga M. Wada S. Nakao K. Watanabe S. Kato A. Sakata A. Kajita H. Shibata Device Process Development Center Corporate Research & Development Center Toshiba Corporation Japan System LSI Division Toshiba Corporation Semiconductor Company Yokohama Japan

ISBN: (纸本)9781424476763;9781424476770

A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuO x reduction lowered line resistance, because Si diffusion causing line resistance increase was controlled by the oxygen at grain boundary. Low-damage process of CuO x reduction also improved voltage ramp dielectric breakdown (VRDB) property. Excellent EM performance brought about by CuSiN was kept by the combination with Ti(N)-BM, because the oxygen made Si and Ti distributions uniform at grain boundary of Cu surface by forming Ti-silicide. Cu atom transport that caused EM failure was suppressed throughout grain boundary of Cu surface.

关键词： Surface resistance Grain boundaries Testing Tin Breakdown voltage Dielectric breakdown Leakage current Electrons Semiconductor device reliability Large scale integration

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Carbon incorporation into substitutional silicon site by car...

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International Workshop on Junction Technology

作者： Hiroshi Itokawa Kiyotaka Miyano Yusuke Oshiki Hiroyuki Onoda Masahito Nishigoori Ichiro Mizushima Kyoichi Suguro Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Yokohama Japan System LSI Division Semiconductor Company Toshiba Corporation Yokohama Japan

ISBN: (纸本)9781424458660;9781424458691

Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C] sub ) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C] sub at a high ratio of substitution with a high doping activation.

关键词： Silicon Ion implantation Metastasis Annealing Tensile stress Doping Lattices Electron mobility FETs MOSFETs

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