Plasma immersion ion implantation (PIII) is a technique which promises high dose rate implantation and compatibility with large-area processing. When a large negative bias is applied to the substrate which is immersed...
详细信息
Plasma immersion ion implantation (PIII) is a technique which promises high dose rate implantation and compatibility with large-area processing. When a large negative bias is applied to the substrate which is immersed inside a high ion-density plasma, all ion species present will be implanted without ion mass selection, Innovations of this techniques include: implantation time independent of implantation area, capability to perform concomitant deposition and implantation, and simplicity of machine design and maintenance. This paper reports the modeling of PIII plasma dynamics and several demonstrated semiconductor processing applications such as plasma doping, subsurface material synthesis, ion beam mixing, microcavity engineering, and surface modifications. Several processing issues such as substrate charging and dosimetry will also be discussed.
The effects of wafer bias and plasma parameters on thin oxide charging during plasma immersion ion implantation (PIII) are simulated. The simulator has been shown to determine accurately the charging currents generate...
详细信息
The effects of wafer bias and plasma parameters on thin oxide charging during plasma immersion ion implantation (PIII) are simulated. The simulator has been shown to determine accurately the charging currents generated during PIII. The dependence of the plasma electron temperature, ion density and plasma uniformity on charging damage in metal oxide semiconductor capacitor structures is investigated. A lower plasma electron temperature is shown to reduce charging damage. Simulation and experimental results show that for a given voltage pulse waveform there is a range of bias repetition rates allowed by limiting the charging damage below a threshold value. Within this range there exists a switch-over repetition rate that minimizes the charging damage.
An analytical model of oxide charging in plasma processing is presented. The model simulates the interactions of the plasma with semiconductor device structures on the wafer and the substrate bias to determine the cha...
An analytical model of oxide charging in plasma processing is presented. The model simulates the interactions of the plasma with semiconductor device structures on the wafer and the substrate bias to determine the charging induced in thin gate oxides. This model agrees well with experimental data for pulsed substrate bias. The simulation shows that a lower plasma electron temperature can reduce the charging damage. Well structures modulate the charging damage, with p wells charging more negatively and n wells charging more positively than an identical case without a well structure. Two‐dimensional charging effects such as plasma nonuniformities and antenna structures have also been successfully modeled. Antenna‐type device structures are shown to enhance the charging damage in both capacitor and well structures.
This is a very informal introduction to the 1996 ICPP Workshop on Challenges for parallelprocessing. This workshop is held in conjunction with the 1996 International Conference on parallelprocessing (ICPP). The purp...
详细信息
In this paper a combination of lossless and lossy compression techniques is presented for the storage and transmission of 3-D medical images. The lossy version of the data is used for fast preview when browsing throug...
详细信息
In this paper a combination of lossless and lossy compression techniques is presented for the storage and transmission of 3-D medical images. The lossy version of the data is used for fast preview when browsing through large databases. When only a small region is of interest then the lossless corrections for this region are transmitted. A special structuring of the bit-stream is also adopted to allow visualization directly from the compressed bit-stream.
We analyze the scheduling aspects of database queries submitted to an abstract model of a very large distributed system. The essential elements of this model are: (a) a finite number of identical processing nodes with...
详细信息
This is a study of the performance on different parallel machines of the solution to the system of linear equations that results from the finite-differencing of the neutron diffusion equation in the context of nuclear...
详细信息
Discusses the advantages of computing with heterogeneous parallel machines, and examines the research challenges for automating the use of such systems. One type of heterogeneous computing system is a mixed-mode machi...
详细信息
Discusses the advantages of computing with heterogeneous parallel machines, and examines the research challenges for automating the use of such systems. One type of heterogeneous computing system is a mixed-mode machine, where a single machine can operate in different modes of parallelism. Another is a mixed-machine system, where a suite of different kinds of parallel machines are interconnected by high-speed links. To exploit such systems, a task must be decomposed into subtasks, where each subtask is computationally homogeneous. The subtasks are then assigned to and executed with the machines (or modes) that will result in a minimal overall execution time. Typically, users must specify this decomposition and assignment. One long-term pursuit in heterogeneous computing is to do this automatically. An overview of a conceptual model of what this involves is given. As an example of the research in this area, a genetic-algorithm-based approach to the subtask assignment and scheduling problem is explored. Open problems in heterogeneous computing are described.
PASM is a concept for a parallelprocessing system that allows experimentation with different architectural design alternatives. PASM is dynamically reconfigurable along three dimensions: partitionability into indepen...
详细信息
PASM is a concept for a parallelprocessing system that allows experimentation with different architectural design alternatives. PASM is dynamically reconfigurable along three dimensions: partitionability into independent or communicating submachines, variable interprocessor connections, and mixed-mode SIMD/MIMD parallelism. With mixed-mode parallelism, a program can switch between SIMD (synchronous) and MIMD (asynchronous) parallelism at instruction-level granularity, allowing the use of both modes in a single machine. The PASM concept is presented, showing the ways in which reconfiguration can be accomplished. Trade-offs among SIMD/MIMD, and mixed-mode parallelism are explored. The small-scale PASM prototype with 16 processing elements is described. The ELP mixed-mode programming language used on the prototype is discussed. An example of a prototype-based study that demonstrates the potential of mixed-mode parallelism is given.
暂无评论