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2023 IEEE International Conference on Electro Information Technology, eIT 2023

作者： Singh, Gurpreet Shekhar, Abhishek Raj Yu, Xinrui Saniie, Jafar Illinois Institute of Technology Embedded Computing and Signal Processing Research Laboratory Department of Electrical and Computer Engineering ChicagoIL United States

ISBN: (纸本)9781665493765

The new era of technology is being greatly influenced by the field of artificial intelligence. computer vision and deep learning have become increasingly important due to their ability to process vast amounts of data and provide insights and solutions in a variety of fields. computer vision, deep learning and signal analysis have been used in a growing number of applications and services including smart devices, image, and speech recognition, healthcare, etc., one such device is an infant monitoring system. It monitors the daily activities of the infant such as their sleeping patterns, sounds, and movements. In this paper, deep learning and computer vision libraries were used to develop algorithms to detect whether the infant was in any uncomfortable situation such as sleeping on its back, face being covered and whether the infant was awake. The smart infant monitoring system detects the infant's unsafe resting situation in real time and sent immediate alerts to the caretaker's device. This paper presents the design flow of a smart infant monitoring system consisting of a night vision camera, a Jetson Nano, and a Wi-Fi internet connection. The pose estimation and awake detection algorithms were developed and tested successfully for different infant resting/sleeping situations. The smart infant monitoring system provides significant benefits for safety and an improved understanding of infants' sleep patterns and behavior. © 2023 IEEE.

关键词： Face recognition

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Dielectric Resonator Magnetoelectric Dipole Arrays with Low Cross Polarization,Backward Radiation,and Mutual Coupling for MIMO Base Station Applications

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China Communications 2024年第6期21卷 290-304页

作者： Song Simin Da Yiran Qian Bingyi Huang Xiaoyu Chen Xiaoming Li Yingsong Ahmed A.Kishk School of Information and Communications Engineering Xi’an Jiaotong UniversityXi’an 710049China Key Laboratory of Intelligent Computing and Signal Processing Ministry of Education Anhui UniversityHefei 230039China Department of Electrical and Computer Engineering Concordia UniversityMontrealQC H3G 1M8Canada

Dielectric resonator magnetoelectric dipole(DRMED)arrays with enhanced isolation,reduced cross-polarization,and backward radiation are proposed for base station(BS)*** proposed antenna comprises an elevated dielectric resonator antenna(DRA)on a small metal plate above a sizeable common ground *** DRA is designed in its T Eδ11 mode,acting like a magnetic *** surface current excited by the differential probes flowing on the small ground plane is equivalent to an electric *** these two equivalent dipoles are orthogonal,they have the magnetoelectric dipole characteristics with reduced backward ***,the small ground planes can be treated as decoupling structures to provide a neutralization path to cancel the original coupling path.A linearly-polarized 4-element prototype array was verified experimentally in previous ***,a dual-polarized DRMED antenna is presented to construct a 2-element and 4×4 array for BS *** investigate its MIMO performance,sophisticated multi-cell scenario simulations are carried *** using the proposed dualpolarized DRMED array,the cellular system capacityis improved by 118.6%compared to a conventional DRA *** significant MIMO system improvement is mainly due to the reduced backward radiation and,therefore,reduced inter-cell *** align well with the simulations.

关键词： backward radiation dielectric resonator antennas(DRAs) isolation magnetoelectric-dipole(ME-dipole)antennas

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Radiative cooling for passive thermal management towards sustainable carbon neutrality

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National Science Review 2023年第1期10卷 87-97页

作者： Jun Liang Jiawei Wu Jun Guo Huagen Li Xianjun Zhou Sheng Liang Cheng-Wei Qiu Guangming Tao Wuhan National Laboratory for Optoelectronics and Optics Valley Laboratory Huazhong University of Science and Technology Department of Electrical and Computer Engineering National University of Singapore MOE Key Laboratory of Thermo-Fluid Science and Engineering School of Energy and Power Engineering Xi'an Jiaotong University Key Laboratory of Education Ministry on Luminescence and Optical Information Technology National Physical Experiment Teaching Demonstration CenterDepartment of PhysicsSchool of Physical Science and Engineering Beijing Jiaotong University State Key Laboratory of Material Processing and Die &Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology

Photonic structures at the wavelength scale offer innovative energy solutions for a wide range of applications,from high-efficiency photovoltaics to passive cooling,thus reshaping the global energy *** cooling based on structural and material design presents new opportunities for sustainable carbon neutrality as a zero-energy,ecologically friendly cooling *** this review,in addition to introducing the fundamentals of the basic theory of radiative cooling technology,typical radiative cooling materials alongside their cooling effects over recent years are summarized and the current research status of radiative cooling materials is outlined and ***,technical challenges and potential advancements for radiative cooling are forecast with an outline of future application scenarios and development *** the future,radiative cooling is expected to make a significant contribution to global energy saving and emission reduction.

关键词： photonic structures radiative cooling energy saving and emission reduction carbon neutrality

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A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 181-194页

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering the Institute of Biomedical Engineering the Department of Electronics and Electrical Engineering the Institute of Pioneer Semiconductor Innovation and the Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper a novel design scheme based on dynamically adaptive neural network (DANN) is proposed to develop fast and accurate compact model (CM). This framework constitutes a powerful yet computationally efficient methodology and exhibits emergent dynamic behaviors. This paper demonstrates that the compact model based on ML can be designed to replicate the performance of conventional compact model for nanodevices. For this work, gate-all-around (GAA) nanosheet (NS) device characteristics are comprehensively analyzed for process variability sources using the proposed model. The device geometry parameters such as channel length, nanosheet width and nanosheet thickness are fed as input features to the DANN model. The adaptive neural network learns dynamically by updating weights of the model in accordance with the input features and achieves accurate neural weight convergence. The proposed model predicted the electrical characteristics of NS devices with less than 1% error rate. The model is also implemented and validated for the simulations of digital circuit designs such as inverter, and logic gates. ©;2023 The Authors.

关键词： Circuit simulation

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Multi-View Graph Embedding Learning for Image Co-Segmentation and Co-Localization

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IEEE Transactions on Circuits and Systems for Video Technology 2024年第6期34卷 4942-4956页

作者： Huang, Aiping Li, Lijian Zhang, Le Niu, Yuzhen Zhao, Tiesong Lin, Chia-Wen Fuzhou University Fujian Key Laboratory for Intelligent Processing and Wireless Transmission of Media Information College of Physics and Information Engineering Fuzhou350108 China Fuzhou University Fujian Key Laboratory of Network Computing and Intelligent Information Processing College of Computer and Data Science Fuzhou350108 China University of Electronic Science and Technology of China School of Information and Communication Engineering Chengdu611731 China Fuzhou University Fujian Key Laboratory for Intelligent Processing and Wireless Transmission of Media Information College of Physics and Information Engineering The Fujian Science and Technology Innovation Laboratory for Optoelectronic Information Fuzhou350108 China Institute of Communications Engineering National Tsing Hua University Department of Electrical Engineering Hsinchu30013 Taiwan

Image co-segmentation and co-localization exploit inter-image information to identify and extract foreground objects with a batch mode. However, they remain challenging when confronted with large object variations or complex backgrounds. This paper proposes a multi-view graph embedding (MV-Gem) learning scheme which integrates diversity, robustness and discernibility of object features to alleviate this phenomenon. To encourage the diversity, the deep co-information containing both low-layer general representations and high-layer semantic information is generated to form a multi-view feature pool for comprehensive co-object description. To enhance the robustness, a multi-view adaptive weighted learning is formulated to fuse the deep co-information for feature complementation. To ensure the discernibility, the graph embedding and sparse constraint are embedded into the fusion formulation for feature selection. The former aims to inherit important structures from multiple views, and the latter further selects important features to restrain irrelevant backgrounds. With these techniques, MV-Gem gradually recovers all co-objects through optimization iterations. Extensive experimental results on real-world datasets demonstrate that MV-Gem is capable of locating and delineating co-objects in an image group. © 1991-2012 IEEE.

关键词： Semantics

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electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Stable Implementation Of Voice Activity Detector using Zero-Phase Zero Frequency Resonator On FPGA 19

Stable Implementation Of Voice Activity Detector using Zero-...

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19th Annual IEEE International Conference and Expo on Real Time Communications at IIT, RTC 2023

作者： Jabbar, Syed Abdul Barche, Purva Gurugubelli, Krishna Azeemuddin, Syed Vuppala, Anil Kumar Ltrc IIIT-H Speech Processing Laboratory Hyderabad India IIIT-Hyderabad The University of Mississippi Cvest Department of Electrical and Computer Engineering MS United States

ISBN: (纸本)9798350327373

Voice activity detection (VAD), is a signal processing technique used to determine whether a given speech signal contains voiced or unvoiced segments. VAD is used in various applications such as Speech Coding, Voice Controlled Systems, speech feature extraction, etc. For example, in Adaptive multi-rate (AMR) speech coding, VAD is used as an efficient way of coding different speech frames at different bit rates. In this paper, we implemented the application of a Zero-Phase Zero Frequency Resonator (ZP-ZFR) as VAD on hardware. ZP-ZFR is an Infinite Impulse Response (IIR) filter that offers the advantage of requiring a lower filter order, making it suitable for hardware implementation. The proposed system is implemented on the TIMIT database using the Nexys Video Artix-7 FPGA board. The hardware design is carried out using Vivado 2021.1, a popular tool for FPGA development. The Hardware Description Language (HDL) used for implementation is Verilog. The proposed system achieves good performance with low complexity. Therefore this work is implemented on hardware, which can be used in various applications. © 2023 IEEE.

关键词： MATLAB

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La-substituted W-type barium-nickel ferrites for tunable and high-performance electromagnetic wave absorption

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International Journal of Minerals,Metallurgy and Materials 2025年第3期32卷 645-656页

作者： Long Wang Jiurong Liu Shenghui Xie Yanli Deng Zhou Wang Shanyue Hou Shengying Yue Gang Wang Na Wu Zhihui Zeng Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials(Ministry of Education) School of Materials Science and EngineeringShandong UniversityJinan 250061China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi’an Jiaotong UniversityXi’an 710049China Army Engineering University of PLA College of Field Engineering Nanjing 210007China Laboratory for Multiscale Mechanics and Medical Science State Key Laboratory for Strength and Vibration of Mechanical StructuresSchool of AerospaceXi’an Jiaotong UniversityXi’an 710049China Department of Electrical and Computer Engineering Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUrbana 61801USA School of Chemistry and Chemical Engineering Shandong UniversityJinan 250100China

W-type barium-nickel ferrite(BaNi_(2)Fe_(16)O_(27))is a highly promising material for electromagnetic wave(EMW)absorption be-cause of its magnetic loss capability for EMW,low cost,large-scale production potential,high-temperature resistance,and excellent chemical ***,the poor dielectric loss of magnetic ferrites hampers their utilization,hindering enhancement in their EMW-absorption *** efficient strategies that improve the EMW-absorption performance of ferrite is highly desired but re-mains ***,an efficient strategy substituting Ba^(2+)with rare earth La^(3+)in W-type ferrite was proposed for the preparation of novel La-substituted ferrites(Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)).The influences of La^(3+)substitution on ferrites’EMW-absorption performance and the dissipative mechanism toward EMW were systematically explored and ***^(3+)efficiently induced lattice defects,enhanced defect-induced polarization,and slightly reduced the ferrites’bandgap,enhancing the dielectric properties of the ***^(3+)also enhanced the ferromagnetic resonance loss and strengthened magnetic *** effects considerably improved the EMW-absorption perform-ance of Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)compared with pure W-type *** x=0.2,the best EMW-absorption performance was achieved with a minimum reflection loss of-55.6 dB and effective absorption bandwidth(EAB)of 3.44 GHz.

关键词： electromagnetic wave absorption W-type barium ferrite rare earth dielectric

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Boosting Performance and QoS for Concurrent GPU B+trees by Combining-Based Synchronization 23

Boosting Performance and QoS for Concurrent GPU B+trees by C...

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28th ACM SIGPLAN Annual Symposium on Principles and Practice of parallel Programming, PPoPP 2023

作者： Zhang, Weihua Zhao, Chuanlei Peng, Lu Lin, Yuzhe Zhang, Fengzhe Lu, Yunping School of Computer Science Fudan University China Institute of Big Data Fudan University China State Key Laboratory of Mathematical Engineering and Advanced Computing China Parallel Processing Institute Fudan University China Department of Computer Science Tulane University United States

ISBN: (纸本)9798400700156

Concurrent B+trees have been widely used in many systems. With the scale of data requests increasing exponentially, the systems are facing tremendous performance pressure. GPU has shown its potential to accelerate concurrent B+trees performance. When many concurrent requests are processed, the conflicts should be detected and resolved. Prior methods guarantee the correctness of concurrent GPU B+trees through lock-based or software transactional memory (STM)-based approaches. However, these methods complicate the request processing logic, increase the number of memory accesses and bring execution path divergence. They lead to performance degradation and variance in response time increasing. Moreover, previous methods do not guarantee linearizability among concurrent requests. In this paper, we design a combined-based concurrency control framework, called Eirene, for GPU B+tree to reduce the overhead of conflict detection and resolution. First, a combining-based synchronization method is designed to combine and issue requests. It combines the requests with the same key, constructs their dependence, decides the issued request, and determines their return values. Since only one request for each key is issued, key conflicts are eliminated. Then, an optimistic STM method is used to reduce structure conflicts. The query and the update requests are partitioned into different kernels. For the update kernels, STM is involved only when the number of the retry reaches a threshold. Finally, a locality-aware warp reorganization optimization is proposed to improve memory behavior and reduce conflicts by exploiting the locality among requests. Evaluations on an NVIDIA A100 GPU show that Eirene is efficient (a throughput of 2.4 billion per second) and can guarantee linearizability. Compared to the state-of-the-art GPU B+tree, it can achieve a speedup of 7.43X and reduce the response time variance from 36% to 5%. © 2023 ACM.

关键词： Graphics processing unit

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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