咨询与建议

限定检索结果

文献类型

  • 52 篇 会议
  • 26 篇 期刊文献
  • 1 册 图书

馆藏范围

  • 79 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 50 篇 工学
    • 33 篇 电子科学与技术(可...
    • 23 篇 电气工程
    • 21 篇 计算机科学与技术...
    • 15 篇 材料科学与工程(可...
    • 13 篇 软件工程
    • 9 篇 冶金工程
    • 9 篇 化学工程与技术
    • 4 篇 动力工程及工程热...
    • 2 篇 机械工程
    • 2 篇 生物工程
    • 1 篇 力学(可授工学、理...
    • 1 篇 信息与通信工程
    • 1 篇 控制科学与工程
    • 1 篇 建筑学
    • 1 篇 土木工程
    • 1 篇 航空宇航科学与技...
    • 1 篇 环境科学与工程(可...
  • 39 篇 理学
    • 29 篇 物理学
    • 18 篇 数学
    • 10 篇 化学
    • 5 篇 统计学(可授理学、...
    • 2 篇 生物学
  • 4 篇 管理学
    • 3 篇 图书情报与档案管...
    • 1 篇 管理科学与工程(可...
    • 1 篇 工商管理
  • 1 篇 经济学
    • 1 篇 应用经济学
  • 1 篇 教育学
    • 1 篇 教育学

主题

  • 12 篇 logic gates
  • 10 篇 silicon
  • 7 篇 mosfet
  • 7 篇 gallium arsenide
  • 6 篇 semiconductor pr...
  • 5 篇 semiconductor de...
  • 5 篇 fluctuations
  • 4 篇 metals
  • 3 篇 three-dimensiona...
  • 3 篇 neural networks
  • 3 篇 finfets
  • 3 篇 resource descrip...
  • 3 篇 aspect ratio
  • 3 篇 electric variabl...
  • 3 篇 mathematical mod...
  • 3 篇 nanosheets
  • 2 篇 circuit simulati...
  • 2 篇 parallel process...
  • 2 篇 tfets
  • 2 篇 iii-v semiconduc...

机构

  • 7 篇 national yang mi...
  • 6 篇 institute of com...
  • 5 篇 parallel and sci...
  • 5 篇 parallel and sci...
  • 4 篇 institute of com...
  • 4 篇 department of el...
  • 3 篇 institute of bio...
  • 3 篇 parallel and sci...
  • 3 篇 electrical engin...
  • 3 篇 parallel and sci...
  • 3 篇 eecs internation...
  • 2 篇 national yang-mi...
  • 2 篇 national energy ...
  • 2 篇 parallel and sci...
  • 2 篇 institute of bio...
  • 2 篇 department of el...
  • 2 篇 department of el...
  • 2 篇 national yang-mi...
  • 2 篇 national yang-mi...
  • 2 篇 parallel and sci...

作者

  • 31 篇 li yiming
  • 24 篇 yiming li
  • 10 篇 sekhar reddy kol...
  • 8 篇 kola sekhar redd...
  • 7 篇 min-hui chuang
  • 5 篇 narasimhulu thot...
  • 5 篇 chieh-yang chen
  • 5 篇 chuang min-hui
  • 4 篇 butola rajat
  • 4 篇 lee yao-jen
  • 4 篇 aslam muhammad
  • 4 篇 chen chieh-yang
  • 4 篇 chen yi-ho
  • 4 篇 cheng hui-wen
  • 3 篇 yu-yu chen
  • 3 篇 samukawa seiji
  • 3 篇 wen-tsung huang
  • 3 篇 sung wen-li
  • 2 篇 chang han-tung
  • 2 篇 chen yu-yu

语言

  • 78 篇 英文
  • 1 篇 中文
检索条件"机构=Parallel and Scientific Computing Laboratory"
79 条 记 录,以下是21-30 订阅
排序:
Effects of Spacer and Single-Charge Trap on Voltage Transfer Characteristics of Gate-All-Around Silicon Nanowire CMOS Devices and Circuits
Effects of Spacer and Single-Charge Trap on Voltage Transfer...
收藏 引用
IEEE Conference on Nanotechnology
作者: Sekhar Reddy Kola Yiming Li Narasimhulu Thoti Parallel and Scientific Computing Laboratory EECS International Graduate Program from National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory Institute of Communications Engineering National Chiao Tung University Hsinchu 300 Taiwan Parallel and Scientific Computing Laboratory EECS International Graduate Program National Chiao Tung University Hsinchu 300 Taiwan
We report the effects of the spacer and the single-charge trap (SCT) on the voltage transfer characteristics of cylindrical-shape gate-all-around (GAA) silicon (Si) nanowire (NW) metal-oxide-semiconductor field effect... 详细信息
来源: 评论
Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation
收藏 引用
IEEE Transactions on Electron Devices 2024年 第1期71卷 350-358页
作者: Sung, Wen-Li Li, Yiming Chuang, Min-Hui National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan
This article proposes grain-pattern-dependent threshold-voltage ( Vth ) models to predict the variability of Vth ( Vth ) due to work-function (WK) fluctuation (WKF) for the vertically stacked multichannel gate-all-aro... 详细信息
来源: 评论
Compact Modeling of N- and P-Type GAA NS FETs Using Physical-Based Artificial Neural Networks with Temperature Dependence
Compact Modeling of N- and P-Type GAA NS FETs Using Physical...
收藏 引用
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
作者: Yun Dei Ya-Shu Yang Yiming Li Institue of Biomedical Engineering and Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung Univeristy Hsinchu Taiwan Institue of Communications Engineering and Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung Univeristy Hsinchu Taiwan
We propose a compact model that utilizes physical-based artificial neural networks (ANNs) to model the effect of temperature on n- and p-type gate-all-around nanosheet FETs. Our compact model comprises two independent...
来源: 评论
Drain-induced-barrier lowering and subthreshold swing fluctuations in 16-nm-gate bulk FinFET devices induced by random discrete dopants
Drain-induced-barrier lowering and subthreshold swing fluctu...
收藏 引用
Device Research Conference
作者: Hsin-Wen Su Yiming Li Yu-Yu Chen Chieh-Yang Chen Han-Tung Chang Parallel and Scientific Computing Laboratory Department of Electrical Engineering National Chiao Tung University Hsinchu Taiwan
Management of process variation and random fluctuation is one of severe challenges in scaling down silicon-based devices continuously according to Moore's law. Emerging fluctuation sources [1-3] consists of the mo... 详细信息
来源: 评论
Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions  11
Characteristic fluctuation of gate-all-around silicon nanowi...
收藏 引用
11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
作者: Sung, Wen-Li Li, Yiming Parallel and Scientific Computing Laboratory National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Chiao Tung University Hsinchu Taiwan Department of Electrical and Computer Engineering National Chiao Tung University Hsinchu Taiwan
In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the ... 详细信息
来源: 评论
Electrical characteristic of InGaAs multiple-gate MOSFET devices
Electrical characteristic of InGaAs multiple-gate MOSFET dev...
收藏 引用
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
作者: Cheng-Hao Huang Yiming Li Parallel and Scientific Computing Laboratory and Institute of Communications Engineering National Chiao Tung University Hsinchu Taiwan
In this work, we study the impact of channel fin width (W fin ) and fin height (H fin ) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and tran... 详细信息
来源: 评论
DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS2
DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with M...
收藏 引用
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
作者: Yueh-Ju Chan Sekhar Reddy Kola Yiming Li Institute of Communications Engineering and Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung Univeristy Hsinchu Taiwan EECS International Graduate Program and Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung Univeristy Hsinchu Taiwan
For the first time, we examine the performance of gate-all-around nanosheet field effect transistor (GAA NS FET) with both monolayer (ML) and bilayer (BL) molybdenum disulfide (MoS 2 ). As compared to the control samp...
来源: 评论
Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers
Characteristics of Gate-All-Around Silicon Nanowire and Nano...
收藏 引用
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
作者: Sekhar Reddy Kola Yiming Li- Narasimhulu Thoti Parallel and Scientific Computing LaboratoryEECS International Graduate ProgramInstitute of Communications Engineering Parallel and Scientific Computing Laboratory1001 Ta-Hsueh Rd. National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering
We estimate DC characteristics and single-charge trap (SCT) induced random telegraph noise (RTN) of gate-all-around (GAA) silicon nanowire (NW) and nanosheet (NS) metal-oxide-semiconductor field effect transistor (MOS... 详细信息
来源: 评论
Energy Band Calculation of Si/Si0.7 Ge0.3 Nanopillars in k➙ Space
Energy Band Calculation of Si/Si0.7 Ge0.3 Nanopillars in k➙...
收藏 引用
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
作者: Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Institute of Communications Engineering National Chiao Tung University Hsinchu City Taiwan
In this work, we explore the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si 0.7 Ge 0.3 matrix fabricated by neutral beam etching. Instead of real-space modeling, we formulate and solve...
来源: 评论
3D simulation of morphological effect on reflectance of Si3N4 subwavelength structures for silicon solar cells
收藏 引用
Nanoscale Research Letters 2012年 第1期7卷 196-196页
作者: Li, Yiming Lee, Ming-Yi Cheng, Hui-Wen Lu, Zheng-Liang Parallel and Scientific Computing Laboratory Department of Electrical Engineering National Chiao Tung University 1001 Ta-Hsueh Road Hsinchu 300 Taiwan
In this study, we investigate the reflectance property of the cylinder, right circular cone, and square pyramid shapes of silicon nitride (Si3N4) subwavelength structure (SWS) with respect to different designing param... 详细信息
来源: 评论