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2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

作者： Kola, Sekhar Reddy Li, Yiming Chen, Chieh-Yang Chuang, Min-Hui National Yang-Ming Chiao Tung University Electrical Engineering and Computer Science International Graduate Program Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Communications Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Department of Electrical Engineering and Computer Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Parallel and Scientific Computing Laboratory Hsinchu300 Taiwan

ISBN: (纸本)9781665409230

We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), and their combinations. The explored devices affected by the WKF and its combination result in sizeable variability. Because of enigmatical interactions among the aforementioned random factors, overestimated variabilities occur if we only consider one random source each time, compared with the statistical 3D device simulation for full RDF, ITF and WKF at the same time. Notably, 10.78% and 103% overestimations are found for the threshold voltage and off-state current fluctuations. © 2022 IEEE.

关键词： Nanosheets

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Considerations for a Distributed GraphBLAS API

Considerations for a Distributed GraphBLAS API

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IEEE International Symposium on parallel and Distributed Processing Workshops and Phd Forum (IPDPSW)

作者： Benjamin Brock Aydin Buluç Timothy G. Mattson Scott McMillan José E. Moreira Roger Pearce Oguz Selvitopi Trevor Steil EECS Department University of California Berkeley CA Computational Research Department Lawrence Berkeley National Laboratory Berkeley CA Parallel Computing Labs Intel Hillsboro OR Software Engineering Institute Carnegie Mellon University Pittsburgh PA IBM Thomas J. Watson Research Center Yorktown Heights NY Center for Applied Scientific Computing Lawrence Livermore National Laboratory Livermore CA School of Mathematics University of Minnesota Minneapolis MN

ISBN: (数字)9781728174457

ISBN: (纸本)9781728174570

The GraphBLAS emerged from an international effort to standardize linear-algebraic building blocks for computing on graphs and graph-structured data. The GraphBLAS is expressed as a C API and has paved the way for multiple implementations. The GraphBLAS C API, however, does not define how distributed-memory parallelism should be handled. This paper reviews various approaches for a GraphBLAS API for distributed computing. This work is guided by our experience with existing distributed memory libraries. Our goal for this paper is to highlight the pros and cons of different approaches rather than to advocate for one particular choice.

关键词： Context parallel processing Libraries Data structures Task analysis Message systems Electronics packaging

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Analysis of Negative Capacitance MOSFETs Characteristic with Spacer

Analysis of Negative Capacitance MOSFETs Characteristic with...

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International Symposium on VLSI Technology, Systems and Applications

作者： Yu-Chun Lee Sekhar Reddy Kola Chieh-Yang Chen Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering EECS International Graduate Program Institute of Communications Engineering Department of Electrical and Computer Engineering National Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu Taiwan

ISBN: (数字)9781728142326

ISBN: (纸本)9781728142333

In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. The scope of the work is to boost the performance and high-energy efficiency of the studied NC-MOSFETs by using the ferro electric material (FE). The NC-MOSFETs with the spacer technology can achieve the admirable I on /I off ratio and subthreshold swing (SS), compared with planar MOSFETs. It makes device scaling possible by eliminating the short channel effect (SCE). We further estimated the effect of FE thickness and spacer, which are another critical parameter of obtaining better electrical characteristics and reducing SS.

关键词： Capacitance Iron Semiconductor device modeling MOSFET Integrated circuit modeling Mathematical model Ferroelectric materials

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Managing surrogate objectives to optimize a helicopter rotor design - Further experiments AIAA MDO 98-4717 7th

Managing surrogate objectives to optimize a helicopter rotor...

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7th AIAA/USAF/NASA/ISSMO Symposium on Multidisciplinary Analysis and Optimization, 1998

作者： Booker, Andrew J. Frank, Paul D. Dennis, J.E. Moore, Douglas W. Serafini, David B. Mathematics and Engineering Analysis Boeing Shared Service Group Applied Research and Technology Box 3707 M/S 7L-68 SeattleWA98124 United States Department of Computational and Applied Mathematics Center for Research on Parallel Computation Rice University P.O. Box 1892 M/S 134 HoustonTX77005 United States National Energy Research Scientific Computing Center E.O. Lawrence Berkeley National Laboratory MS 50B-2239 1 Cyclotron Road BerkeleyCA94720 United States

It is common engineering practice to use response surface approximations as surrogates for an expensive objective function in engineering design. The rationale is to reduce the number of detailed, costly analyses required during optimization. In earlier work, we developed a rigorous and effective scheme for managing the interplay between the use of surrogates in the optimization and scheduled progress checks with the expensive analysis so that the process converges to a solution of the original design problem. In this paper, we will report our latest numerical tests with a helicopter rotor design problem which has proved to be a fruitful laboratory for experimentation. The results given here support the use of an ANOVA decomposition on a DACE model to identify the most important optimization variables in an optimal design problem. © 1998, American Institute of Aeronautics and Astronautics, Inc.

关键词： Nonlinear programming

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Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps

Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices ...

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IEEE Conference on Nanotechnology

作者： Sekhar Reddy Kola Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering Institute of Communications Engineering Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Hsinchu Taiwan

Three-dimensional (3D) bulk fin-typed field effect transistors (FinFETs) have emerged as key devices that can scale down the technology node beyond 22-nm. However, the scaled devices have created new sources of fluctuation inherent in 3D geometry. The interface trap is one such fluctuation that is caused by the trapping and de-trapping of charge carriers and has an adverse effect on device characteristics and variability. In this work, we study impacts of random interface traps (RITs) on electrical characteristic of bulk FinFETs by using a 3D quantum-mechanically corrected device simulation. RIT position effects on short channel effects (SCEs) are examined with physical governed influence to show the major fluctuations. More than 50% reductions of the RITs-induced characteristic fluctuation of the germanium (Ge) devices are observed, compared with Si devices. The Ge ones can reduce SCE variations and exhibit high immunity to RITs.

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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Deep Learning Approach to Modeling and Exploring Random Sources of Gate-All-Around Silicon Nanosheet MOSFETs

Deep Learning Approach to Modeling and Exploring Random Sour...

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2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang-Ming Chiao Tung University Parallel and Scientific Computing Laboratory Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Electrical Engineering and Computer Science International Graduate Program Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Communications Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Department of Electrical Engineering and Computer Engineering Hsinchu300 Taiwan National Yang-Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300 Taiwan Center for mmWave Smart Radar System and Technologies National Yang-Ming Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu300 Taiwan

ISBN: (纸本)9781665409230

In this paper, for the first time, deep learning (DL) based artificial neural network (ANN) is applied to model the effects of various random variations: work function fluctuation, random dopant fluctuation, and interface trap fluctuation, on gate-all-around silicon nanosheet MOSFETs. The number of fluctuations for each source variation is used as input features and their effects on devices of interest are studied qualitatively and quantitatively. The key figures of merit (FoM) are also extracted accurately from the transfer characteristics, which shows the competency of the ANN model in the domain of device modeling. © 2022 IEEE.

关键词： Nanosheets

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Madness: A multiresolution, adaptive numerical environment for scientific simulation

Madness: A multiresolution, adaptive numerical environment f...

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作者： Harrison, Robert J. Beylkin, Gregory Bischoff, Florian A. Calvin, Justus A. Fann, George I. Fosso-Tande, Jacob Galindo, Diego Hammond, Jeff R. Hartman-Baker, Rebecca Hill, Judith C. Jia, Jun Kottmann, Jakob S. Ou, M-J. Yvonne Pei, Junchen Ratcliff, Laura E. Reuter, Matthew G. Richie-Halford, Adam C. Romero, Nichols A. Sekino, Hideo Shelton, William A. Sundahl, Bryan E. Thornton, W. Scott Valeev, Edward F. Vázquez-Mayagoitia, Álvaro Vence, Nicholas Yanai, Takeshi Yokoi, Yukina Stony Brook University Stony BrookNY11794 United States University of Colorado at Boulder BoulderCO80309 United States Institut für Chemie Humboldt-Universität Zu Berlin Unter den Linden 6 Berlin10099 Germany Department of Chemistry Virginia Tech. BlacksburgVA24061 United States Oak Ridge National Laboratory Oak RidgeTN37831 United States Department of Chemistry and Biochemistry Florida State University TallahasseeFL32306 United States Parallel Computing Lab Intel Corporation PortlandOR97219 United States National Energy Research Scientific Computing Center Lawrence Berkeley National Laboratory BerkeleyCA94720 United States LinkedIn Mountain ViewCA94043 United States Department of Mathematical Sciences University of Delaware NewarkDE19716 United States State Key Laboratory of Nuclear Physics and Technology School of Physics Peking University Beijing100871 China Argonne Leadership Computing Facility Argonne National Laboratory ArgonneIL60439 United States Department of Physics University of Washington SeattleWA98195 United States Computer Science and Engineering Toyohashi University of Technology ToyohashiAichi441-8580 Japan Louisiana State University Baton RougeLA70803 United States Department of Physics LaSierra University RiversideCA92505 United States Theoretical and Computational Molecular Science Institute for Molecular Science OkazakiAichi444-8585 Japan

MADNESS (multiresolution adaptive numerical environment for scientific simulation) is a high-level software environment for solving integral and differential equations in many dimensions that uses adaptive and fast harmonic analysis methods with guaranteed precision that are based on multiresolution analysis and separated representations. Underpinning the numerical capabilities is a powerful petascale parallel programming environment that aims to increase both programmer productivity and code scalability. This paper describes the features and capabilities of MADNESS and briefly discusses some current applications in chemistry and several areas of physics. © 2016 Society for Industrial and Applied Mathematics.

关键词： Multiresolution analysis

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High-Performance Metal-Ferroeletric-Semiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGe

High-Performance Metal-Ferroeletric-Semiconductor Nanosheet ...

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International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

作者： Narasimhulu Thoti Yiming Li Sekhar Reddy Kola Seiji Samukawa Parallel and Scientific Computing Laboratory 1001 Ta-Hsueh Rd. Hsinchu Taiwan EECS International Graduate Program 1001 Ta-Hsueh Rd. Hsinchu Taiwan Institute of Communications Engineering 1001 Ta-Hsueh Rd. Hsinchu Taiwan National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan Institute of Fluid Science Tohoku University 1001 Ta-Hsueh Rd. Sendai Japan

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

Nanosheet line tunnel-field effect transistors (NLTFETs) are for the first time proposed by utilizing the advantages of ferroelectricity through HZO materials. Three ferroelectric line TFETs have been proposed and investigated. Among these, the metal-ferroelectric-semiconductor (MFS) structure has shown superior performance than the other two variants. The factors of electric field and electron barrier tunneling have been addressed to govern the performance of these structures. In addition, the effects of the ferroelectric (Hf 0.5 Zr 0.5 O 2 ) thickness (t FE ) and the dielectric constant have been discussed. The MFS NLTFETs can effectively utilize the advantages of ferroelectric than the other variants. High on-current of 175.6 μA/μm and low off-current of 38.4 aA/μm are achieved at t FE of 4 nm through proper utilization of gate-overlap on to the drain side. Furthermore, the proposed MFS structure successfully delivers low average and minimum subthreshold swings even at very thin t FE .

关键词： Performance evaluation TFETs Tunneling Nanoscale devices Semiconductor process modeling Electric fields Silicon germanium

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Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Statistical Analysis of Intrinsic High-Frequency Characteris...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Kazuhiko Endo Seiji Samukawa Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Institute of Communications Engineering Department of Electronics and Electrical Engineering Institute of Biomedical Engineering Center for mm Wave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Fluid Science Tohoku University 2-1-1 Katahira Aoba-ku Sendai Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan

In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed $(iid)$ assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

关键词： MOSFET Fluctuations Statistical analysis Gallium arsenide Cutoff frequency Metals Logic gates

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