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Design and exploration of vertically stacked complementary tunneling field-effect transistors

Applied Physics Express 2024年第1期17卷 014001-014001页

作者： Thoti, Narasimhulu Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

The purpose of this letter is to study the design and explore vertically stacked complementary tunneling field-effect transistors (CTFETs) using CFET technology for emerging technology nodes. As a prior work, the CTFET’s device-level simulations are implemented and deliberated in strict compliance with the experimental settings. This work comprises the study of physical and DC analyses by scaling the p- to n-CTFET separation (D pn), being a significant factor in CFET/CTFET design for its process difficulty. By utilizing the 50% benefit in footprint, the work is further extended to CTFET static random access memory implementation and characterization with hold/read noise margin analysis. © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

关键词： Si-Ge alloys

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Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Intrinsic Parameter Fluctuation and Process Variation Effect...

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IEEE International Symposium on Quality Electronic Design

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T Nch /T Pch ), the channel width (W ch ), and the gate length (L G ) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

关键词： Fluctuations Gallium arsenide Logic gates Electric variables Silicon Resource description framework Semiconductor process modeling

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Bridging HPC Communities through the Julia Programming Language

arXiv

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arXiv 2022年

作者： Churavy, Valentin Godoy, William F. Bauer, Carsten Ranocha, Hendrik Schlottke-Lakemper, Michael Räss, Ludovic Blaschke, Johannes Giordano, Mosè Schnetter, Erik Omlin, Samuel Vetter, Jeffrey S. Edelman, Alan Massachussetts Institute of Technology United States Oak Ridge National Laboratory United States Paderborn Center for Parallel Computing Paderborn University Germany Department of Mathematics University of Hamburg Germany Applied and Computational Mathematics RWTH Aachen University Germany University of Stuttgart Germany ETH Zurich Switzerland Birmensdorf Switzerland National Energy Research Scientific Computing Center Lawrence Berkeley National Laboratory 1 Cyclotron Road BerkeleyCA94720 United States Centre for Advanced Research Computing University College London Gower Street LondonWC1E 6BT United Kingdom Perimeter Institute 31 Caroline St. N. WaterlooONN2L 2Y5 Canada Department of Physics and Astronomy University of Waterloo 200 University Avenue West WaterlooONN2L 3G1 Canada Center for Computation & Technology Louisiana State University Baton RougeLA70803 United States ETH Zurich Switzerland

The Julia programming language has evolved into a modern alternative to fill existing gaps in scientific computing and data science applications. Julia leverages a unified and coordinated single-language and ecosystem paradigm and has a proven track record of achieving high performance without sacrificing user productivity. These aspects make Julia a viable alternative to high-performance computing's (HPC's) existing and increasingly costly many-body workflow composition strategy in which traditional HPC languages (e.g., Fortran, C, C++) are used for simulations, and higher-level languages (e.g., Python, R, MATLAB) are used for data analysis and interactive computing. Julia's rapid growth in language capabilities, package ecosystem, and community make it a promising universal language for HPC. This paper presents the views of a multidisciplinary group of researchers from academia, government, and industry that advocate for an HPC software development paradigm that emphasizes developer productivity, workflow portability, and low barriers for entry. We believe that the Julia programming language, its ecosystem, and its community provide modern and powerful capabilities that enable this group's objectives. Crucially, we believe that Julia can provide a feasible and less costly approach to programming scientific applications and workflows that target HPC facilities. In this work, we examine the current practice and role of Julia as a common, end-to-end programming model to address major challenges in scientific reproducibility, data-driven AI/machine learning, co-design and workflows, scalability and performance portability in heterogeneous computing, network communication, data management, and community education. As a result, the diversification of current investments to fulfill the needs of the upcoming decade is crucial as more supercomputing centers prepare for the exascale era. © 2022, CC BY.

关键词： Productivity

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Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Application of Deep Artificial Neural Network to Model Chara...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sagarika Dash Yiming Li Wen-Li Sung Parallel and Scientific Computing Laboratory National Yang-Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Center for mm Wave Smart Radar System and Technologies National Yang-Ming Chiao Tung University Hsinchu Taiwan

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.

关键词： Semiconductor device modeling MOSFET Gallium arsenide Artificial neural networks Predictive models Logic gates Silicon

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Scaling Limitations of Line TFETs at Sub-8-nm Technology Node

Scaling Limitations of Line TFETs at Sub-8-nm Technology Nod...

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International Symposium on VLSI Technology, Systems and Applications

作者： Narasimhulu Thoti Yiming Li Sekhar Reddy Kola Parallel and Scientific Computing Laboratory National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan EECS International Graduate Program National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan Institute of Communications Engineering National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan Department of Electrical and Computer Engineering National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu Taiwan

ISBN: (数字)9781728142326

ISBN: (纸本)9781728142333

The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (t n ) of n-epitaxial region, and source-to-drain length (L SDeff ) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 × 10 18 cm -3 , an optimal t n as low (about 0.5 nm), and a L SDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all.

关键词： Electron devices Solids

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用于时域电磁场模拟的可扩展三维求解器

用于时域电磁场模拟的可扩展三维求解器

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2012全国高性能计算学术年会

作者： Ruifeng ZHAO 赵瑞峰 Xiaohe ZHUFU 主父笑荷 Jin XU 徐进 Xin QI 齐新 Lei YANG 杨磊 Laboratory of Parallel Software and Scientific Computing Institute of SoftwareChinese Academy of Sc 中国科学院软件研究所并行软件与科学计算实验室北京 100190 Laboratory of Linear Accelerator Institute of Modern PhysicsChinese Academy of ScienceLanzhou7300 中国科学院近代物理研究所直线加速器研究室兰州 730000

本文研究了一种用于三维时域电磁场模拟的可扩展求解器.该求解器基于非结构网格上的非连续伽辽金方法，并利用定义在四面体上的多变量拉格朗日多项式高阶节点基对单元内的电磁场进行展开.该求解器对求解区域进行了分解，以达到多进程并... 详细信息

本文研究了一种用于三维时域电磁场模拟的可扩展求解器.该求解器基于非结构网格上的非连续伽辽金方法，并利用定义在四面体上的多变量拉格朗日多项式高阶节点基对单元内的电磁场进行展开.该求解器对求解区域进行了分解，以达到多进程并行计算目的，由于非连续伽辽金算法的特性，求解器具有很好的可扩展性.本文对周期性边界条件和完美电导体边界条件下的求解过程都进行了研究，并在不同超级计算机上对求解器进行了测试，测试中用到的最大进程数目为2048.

关键词：电磁场三维模拟可扩展三维求解器麦克斯韦方程非连续伽辽金方法非结构化网格

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CP2K: An electronic structure and molecular dynamics software package quickstep: Efficient and accurate electronic structure calculations

arXiv

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arXiv 2020年

作者： Kühne, Thomas D. Iannuzzi, Marcella Ben, Mauro Del Rybkin, Vladimir V. Seewald, Patrick Stein, Frederick Laino, Teodoro Khaliullin, Rustam Z. Schütt, Ole Schiffmann, Florian Golze, Dorothea Wilhelm, Jan Chulkov, Sergey Bani-Hashemian, Mohammad Hossein Weber, Valéry Borštnik, Urban Taillefumier, Mathieu Jakobovits, Alice Shoshana Lazzaro, Alfio Pabst, Hans Müller, Tiziano Schade, Robert Guidon, Manuel Andermatt, Samuel Holmberg, Nico Schenter, Gregory K. Hehn, Anna Bussy, Augustin Belleflamme, Fabian Tabacchi, Gloria Glöß, Andreas Lass, Michael Bethune, Iain Mundy, Christopher J. Plessl, Christian Watkins, Matt VandeVondele, Joost Krack, Matthias Hutter, Jürg Dynamics of Condensed Matter and Center for Sustainable Systems Design Chair of Theoretical Chemistry Paderborn University Warburger Str. 100 PaderbornD-33098 Germany Department of Chemistry University of Zurich Winterthurerstrasse 190 ZürichCH-8057 Switzerland Computational Research Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States IBM Research - Zurich Säumerstrasse 4 RüschlikonCH-8803 Switzerland Department of Chemistry McGill University CH-801 Sherbrooke St. West MontrealQCH3A 0B8 Canada Department of Materials ETH Zürich ZürichCH-8092 Switzerland Centre of Policy Studies Victoria University Melbourne Australia Department of Applied Physics Aalto University Otakaari 1 EspooFI-02150 Finland Institute of Theoretical Physics University of Regensburg Universitätsstraße 31 RegensburgD-93053 Germany School of Mathematics and Physics University of Lincoln Brayford Pool Lincoln United Kingdom Integrated Systems Laboratory ETH Zürich ZürichCH-8092 Switzerland Scientific IT Services ETH Zürich Zürich Switzerland ETH Zürich HPE Switzerland GmbH Basel Switzerland Intel Extreme Computing Software and Systems Zürich Switzerland Department of Computer Science and Paderborn Center for Parallel Computing Paderborn University Warburger Str. 100 PaderbornD-33098 Germany Department of Chemistry and Materials Science Aalto University P.O. Box 16100 Aalto00076 Finland Physical Science Division Pacific Northwest National Laboratory P. O. Box 999 RichlandWA99352 United States Department of Science and High Technology University of Insubria INSTM via Valleggio 9 ComoI-22100 Italy BASF SE Carl-Bosch-Straße 38 Ludwigshafen am RheinD-67056 Germany Hartree Centre Science and Technology Facilities Council United Kingdom Laboratory for Scientific Computing and Modelling Paul Scherrer Institute Villigen PSICH-5232 Switzerland

CP2K is an open source electronic structure and molecular dynamics software package to perform atomistic simulations of solid-state, liquid, molecular and biological systems. It is especially aimed at massively-parallel and linear-scaling electronic structure methods and state-of-the-art ab-initio molecular dynamics simulations. Excellent performance for electronic structure calculations is achieved using novel algorithms implemented for modern high-performance computing systems. This review revisits the main capabilities of CP2K to perform efficient and accurate electronic structure simulations. The emphasis is put on density functional theory and multiple post-Hartree-Fock methods using the Gaussian and plane wave approach and its augmented all-electron extension. Copyright © 2020, The Authors. All rights reserved.

关键词： Electronic structure

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Preface | Mathematical and Computer Modelling - Volume 58, Issues 1-2

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Mathematical and Computer Modelling 2013年第1期58卷 274-274页

作者： Yiming Li Chun-Nan Chen Yoshinari Kamakura Todd McKenzie Mincheol Shin Laurence T. Yang Shao-Ming Yu Parallel and Scientific Computing Laboratory Department of Electrical and Computer Engineering National Chiao Tung University 1001 Ta-Hsueh Road Hsinchu 300 Taiwan Department of Physics Tamkang University Taipei Taiwan Graduate School of Engineering Osaka University Osaka Japan System and Technology Group IBM Corporation VT USA Department of Electrical Engineering KAIST Daejeon Republic of Korea Department of Computer Science St Francis Xavier University NS Canada Taiwan Semiconductor Manufacturing Company Hisnchu Taiwan

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Foundational Competencies and Responsibilities of a Research Software Engineer

arXiv

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arXiv 2023年

作者： Goth, Florian Alves, Renato Braun, Matthias Castro, Leyla Jael Chourdakis, Gerasimos Christ, Simon Cohen, Jeremy Druskat, Stephan Erxleben, Fredo Grad, Jean-Noël Hagdorn, Magnus Hodges, Toby Juckeland, Guido Kempf, Dominic Lamprecht, Anna-Lena Linxweiler, Jan Löffler, Frank Martone, Michele Schwarzmeier, Moritz Seibold, Heidi Thiele, Jan Philipp Waldow, Harald von Wittke, Samantha Institute for Theoretical Physics and Astrophysics University of Würzburg Germany European Molecular Biology Laboratory Heidelberg Germany Cluster of Excellence IntCDC University of Stuttgart Germany ZB MED Information Centre for Life Sciences Cologne Germany School of Computation Information and Technology Technical University of Munich Garching Germany Institute for Parallel and Distributed Systems University of Stuttgart Stuttgart Germany Leibniz University Hannover Department of Cell Biology and Biophysics Computational Biology Germany Imperial College London London United Kingdom Institute for Software Technology Berlin Germany Humboldt-Universität zu Berlin Department of Computer Science Berlin Germany Helmholtz-Zentrum Dresden-Rossendorf Germany Institute for Computational Physics University of Stuttgart Germany Geschäftsbereich IT Charité Universitätsmedizin Berlin Germany The Carpentries United States Heidelberg University Scientific Software Center Germany Institute of Computer Science University of Potsdam Germany Technische Universität Braunschweig Germany Michael Stifel Center Jena Friedrich Schiller University Jena Germany Leibniz Supercomputing Centre Garching Germany Mathematical Modeling and Analysis TU Darmstadt Germany IGDORE Munich Germany Weierstrass Institute Berlin Germany Leibniz University Hannover Institute of Applied Mathematics Scientific Computing Hannover Germany Johann Heinrich von Thünen Institute Centre for Information Management Germany

The term Research Software Engineer, or RSE, emerged a little over 10 years ago as a way to represent individuals working in the research community but focusing on software development. The term has been widely adopted and there are a number of high-level definitions of what an RSE is. However, the roles of RSEs vary depending on the institutional context they work in. At one end of the spectrum, RSE roles may look similar to a traditional research role. At the other extreme, they resemble that of a software engineer in industry. Most RSE roles inhabit the space between these two extremes. Therefore, providing a straightforward, comprehensive definition of what an RSE does and what experience, skills and competencies are required to become one is challenging. In this community paper we define the broad notion of what an RSE is, explore the different types of work they undertake, and define a list of foundational competencies as well as values that outline the general profile of an RSE. Further research and training can build upon this foundation of skills and focus on various aspects in greater detail. We expect that graduates and practitioners will have a larger and more diverse set of skills than outlined here. On this basis, we elaborate on the progression of these skills along different dimensions. We look at specific types of RSE roles, propose recommendations for organisations, and give examples of future specialisations. An appendix details how existing curricula fit into this framework. © 2023, CC BY.

关键词： Computer aided software engineering

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